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Journal Articles

Temperature dependent reflectivity and anisotropic magnetization reversal in magnetically doped quasi-two-dimensional charge density wave alloys A 0.01 Nb Se 2 ( A = Cr , Mn , Fe )

A. F. Isakovic, R. Smith, K. Evans-Lutterodt, R. E. Thorne, G. L. Carr

J. Appl. Phys. 103, 07D306 (2008)

https://doi.org/10.1063/1.2856509

Published: March 2008

View article titled, Temperature dependent reflectivity and anisotropic magnetization reversal in magnetically doped quasi-two-dimensional charge density wave alloys A 0.01 Nb Se 2 ( A = Cr , Mn , Fe )

Journal Articles

Detection and quantification of fish populations by ultrasonic echo ranging

R. E. Thorne

J. Acoust. Soc. Am. 59, S73–S74 (1976)

https://doi.org/10.1121/1.2002869

Published: August 2005

View article titled, Detection and quantification of fish populations by ultrasonic echo ranging

Journal Articles

Photoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy

E. E. Mendez, M. Heiblum, R. Fisher, J. Klem, R. E. Thorne, H. Morkoç

J. Appl. Phys. 54, 4202–4204 (1983)

https://doi.org/10.1063/1.332558

Published: July 1983

View article titled, Photoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy

Journal Articles

Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures

R. Fischer, J. Klem, T. J. Drummond, R. E. Thorne, W. Kopp, H. Morkoç, A. Y. Cho

J. Appl. Phys. 54, 2508–2510 (1983)

https://doi.org/10.1063/1.332317

Published: May 1983

View article titled, Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures

Journal Articles

Use of a superlattice to enhance the interface properties between two bulk heterolayers

T. J. Drummond, J. Klem, D. Arnold, R. Fischer, R. E. Thorne, W. G. Lyons, H. Morkoç

Appl. Phys. Lett. 42, 615–617 (1983)

https://doi.org/10.1063/1.94021

Published: April 1983

View article titled, Use of a superlattice to enhance the interface properties between two bulk heterolayers

Journal Articles

Si incorporation in Al_xGa_1−xAs grown by molecular beam epitaxy

T. J. Drummond, W. G. Lyons, R. Fischer, R. E. Thorne, H. Morkoç, C. G. Hopkins, C. A. Evans, Jr.

J. Vac. Sci. Technol. 21, 957–960 (1982)

https://doi.org/10.1116/1.571873

Published: November 1982

View article titled, Si incorporation in AlxGa1−xAs grown by molecular beam epitaxy

Journal Articles

Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy

S. L. Su, R. E. Thorne, R. Fischer, W. G. Lyons, H. Morkoç

J. Vac. Sci. Technol. 21, 961–964 (1982)

https://doi.org/10.1116/1.571874

Published: November 1982

View article titled, Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy

Journal Articles

Use of a GaAs smoothing layer to improve the heterointerface of GaAs/Al_xGa_1−xAs field‐effect transistors

W. Kopp, S. L. Su, R. Fischer, W. G. Lyons, R. E. Thorne, T. J. Drummond, H. Morkoç, A. Y. Cho

Appl. Phys. Lett. 41, 563–565 (1982)

https://doi.org/10.1063/1.93596

Published: September 1982

View article titled, Use of a GaAs smoothing layer to improve the heterointerface of GaAs/AlxGa1−xAs field‐effect transistors

Journal Articles

Normally‐on and normally‐off camel diode gate GaAs field effect transistors for large scale integration

R. E. Thorne, S. L. Su, W. Kopp, R. Fischer, T. J. Drummond, H. Morkoç

J. Appl. Phys. 53, 5951–5958 (1982)

https://doi.org/10.1063/1.331385

Published: August 1982

View article titled, Normally‐on and normally‐off camel diode gate GaAs field effect transistors for large scale integration

Journal Articles

An explanation for anomalous donor activation energies in Al_0.35Ga_0.65As

R. E. Thorne, T. J. Drummond, W. G. Lyons, R. Fischer, H. Morkoç

Appl. Phys. Lett. 41, 189–191 (1982)

https://doi.org/10.1063/1.93457

Published: July 1982

View article titled, An explanation for anomalous donor activation energies in Al0.35Ga0.65As

Journal Articles

Influence of Al_xGa_1−xAs buffer layers on the performance of modulation‐doped field‐effect transistors

T. J. Drummond, W. Kopp, R. E. Thorne, R. Fischer, H. Morkoç

Appl. Phys. Lett. 40, 879–881 (1982)

https://doi.org/10.1063/1.92933

Published: May 1982

View article titled, Influence of AlxGa1−xAs buffer layers on the performance of modulation‐doped field‐effect transistors

Journal Articles

A novel normally‐off camel diode gate GaAs field‐effect transistor

T. J. Drummond, T. Wang, W. Kopp, H. Morkoç, R. E. Thorne, S. L. Su

Appl. Phys. Lett. 40, 834–836 (1982)

https://doi.org/10.1063/1.93246

Published: May 1982

View article titled, A novel normally‐off camel diode gate GaAs field‐effect transistor

Journal Articles

Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures

T. J. Drummond, W. Kopp, R. Fischer, H. Morkoç, R. E. Thorne, A. Y. Cho

J. Appl. Phys. 53, 1238–1240 (1982)

https://doi.org/10.1063/1.330537

Published: February 1982

View article titled, Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures

NARROW

Topics

Temperature dependent reflectivity and anisotropic magnetization reversal in magnetically doped quasi-two-dimensional charge density wave alloys A 0.01 Nb Se 2 ( A = Cr , Mn , Fe )

Detection and quantification of fish populations by ultrasonic echo ranging

Photoluminescence study of the incorporation of silicon in GaAs grown by molecular beam epitaxy

Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures

Use of a superlattice to enhance the interface properties between two bulk heterolayers

Si incorporation in Al_xGa_1−xAs grown by molecular beam epitaxy

Influence of buffer thickness on the performance of GaAs field effect transistors prepared by molecular beam epitaxy

Use of a GaAs smoothing layer to improve the heterointerface of GaAs/Al_xGa_1−xAs field‐effect transistors

Normally‐on and normally‐off camel diode gate GaAs field effect transistors for large scale integration

An explanation for anomalous donor activation energies in Al_0.35Ga_0.65As

Influence of Al_xGa_1−xAs buffer layers on the performance of modulation‐doped field‐effect transistors

A novel normally‐off camel diode gate GaAs field‐effect transistor

Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures

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