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R. E. Balderas-Navarro
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Journal Articles

Data reduction for spatially resolved reflectance anisotropy spectrometer

L. Rodríguez-Salas, A. Lastras-Martínez, O. F. Núñez-Olvera, M. A. Lastras-Montaño, R. Castro-García, R. E. Balderas-Navarro, L. F. Lastras-Martínez
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 94, 105101 (2023)
https://doi.org/10.1063/5.0162116
Published: October 2023
View article titled, Data reduction for spatially resolved reflectance anisotropy spectrometer
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Journal Articles

TO-phonon anisotropies in a highly doped InP (001) grating structure

L. D. Espinosa-Cuellar, L. F. Lastras-Martínez, R. E. Balderas-Navarro, R. Castro-García, A. Lastras-Martínez, J. M. Flores-Camacho, Mohammad Esmail Aryaee Panah, Elizaveta Semenova, Andrei V. Lavrinenko
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 141102 (2021)
https://doi.org/10.1063/5.0062251
Published: October 2021
View article titled, TO-phonon anisotropies in a highly doped InP (001) grating structure
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Journal Articles

Differential reflectance contrast technique in near field limit: Application to graphene

L. F. Lastras-Martínez, D. Medina-Escobedo, G. Flores-Rangel, R. E. Balderas-Navarro, O. Ruiz-Cigarrillo, R. Castro-García, M. del P. Morales-Morelos, J. Ortega-Gallegos, M. Losurdo
Journal: AIP Advances
AIP Advances 9, 045309 (2019)
https://doi.org/10.1063/1.5092339
Published: April 2019
View article titled, Differential reflectance contrast technique in near field limit: Application to graphene
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Journal Articles

Rapid reflectance-anisotropy spectroscopy as an optical probe for real-time monitoring of thin film deposition

J. Ortega-Gallegos, L. E. Guevara-Macías, A. Lastras-Martínez, D. Ariza-Flores, R. E. Balderas-Navarro, L. F. Lastras-Martínez
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1934, 040001 (2018)
https://doi.org/10.1063/1.5024494
Published: February 2018
View article titled, Rapid reflectance-anisotropy spectroscopy as an optical probe for real-time monitoring of thin film deposition
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Journal Articles

Real-time optical monitoring of semiconductor epitaxial growth

A. Lastras-Martínez, J. Ortega-Gallegos, L. E. Guevara-Macías, D. Ariza-Flores, O. Núñez-Olvera, R. E. López-Estopier, R. E. Balderas-Navarro, L. F. Lastras-Martínez
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1934, 040002 (2018)
https://doi.org/10.1063/1.5024495
Published: February 2018
View article titled, Real-time optical monitoring of semiconductor epitaxial growth
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Journal Articles

Note: A simple multi-channel optical system for modulation spectroscopies

J. Solís-Macías, J. D. Sánchez-López, R. Castro-García, J. M. Flores-Camacho, G. Flores-Rangel, Jian-Jhih Ciou, Kai-Wei Chen, Chang-Hsiao Chen, L. F. Lastras-Martínez, R. E. Balderas-Navarro
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 88, 126107 (2017)
https://doi.org/10.1063/1.4998596
Published: December 2017
View article titled, Note: A simple multi-channel optical system for modulation spectroscopies
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Journal Articles

Optical detection of graphene nanoribbons synthesized on stepped SiC surfaces

L. F. Lastras-Martínez, J. Almendarez-Rodríguez, G. Flores-Rangel, N. A. Ulloa-Castillo, O. Ruiz-Cigarrillo, C. A. Ibarra-Becerra, R. Castro-García, R. E. Balderas-Navarro, M. H. Oliveira, Jr., J. M. J. Lopes
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 035701 (2017)
https://doi.org/10.1063/1.4993453
Published: July 2017
View article titled, Optical detection of graphene nanoribbons synthesized on stepped SiC surfaces
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Journal Articles

Measurement of the shear strain of the Gd2O3/GaAs(001) interface by photoreflectance difference spectroscopy

N. A. Ulloa-Castillo, L. F. Lastras-Martínez, R. E. Balderas-Navarro, R. Herrera-Jasso, A. Lastras-Martínez
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 181905 (2014)
https://doi.org/10.1063/1.4901168
Published: November 2014
View article titled, Measurement of the shear strain of the Gd<sub>2</sub>O<sub>3</sub>/GaAs(001) interface by photoreflectance difference spectroscopy
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Journal Articles

Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

A. Lastras-Martínez, J. Ortega-Gallegos, L. E. Guevara-Macías, O. Nuñez-Olvera, R. E. Balderas-Navarro, L. F. Lastras-Martínez, L. A. Lastras-Montaño, M. A. Lastras-Montaño
Journal: APL Materials
APL Mater. 2, 032107 (2014)
https://doi.org/10.1063/1.4868519
Published: March 2014
View article titled, Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth
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Journal Articles

Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy

L. F. Lastras-Martínez, R. Herrera-Jasso, N. A. Ulloa-Castillo, R. E. Balderas-Navarro, A. Lastras-Martínez, Angie C. Lin, M. M. Fejer, James S. Harris
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 173504 (2013)
https://doi.org/10.1063/1.4828737
Published: November 2013
View article titled, Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy
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Journal Articles

Reflectance anisotropies of compressively strained Si grown on vicinal Si 1 − x C x (001)

R. E. Balderas-Navarro, N. A. Ulloa-Castillo, K. Arimoto, G. Ramírez-Meléndez, L. F. Lastras-Martínez, H. Furukawa, J. Yamanaka, A. Lastras-Martínez, J. M. Flores-Camacho, N. Usami, D. Stifter, K. Hingerl
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 011902 (2013)
https://doi.org/10.1063/1.4773560
Published: January 2013
View article titled, Reflectance anisotropies of compressively strained Si grown on vicinal Si 1 − x C x (001)
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Journal Articles

A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution

O. Núñez-Olvera, R. E. Balderas-Navarro, J. Ortega-Gallegos, L. E. Guevara-Macías, A. Armenta-Franco, M. A. Lastras-Montaño, L. F. Lastras-Martínez, A. Lastras-Martínez
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 83, 103109 (2012)
https://doi.org/10.1063/1.4760252
Published: October 2012
View article titled, A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with sub-second time resolution
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Journal Articles

Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV

L. F. Lastras-Martínez, R. E. Balderas-Navarro, R. Herrera-Jasso, J. Ortega-Gallegos, A. Lastras-Martínez, Y. Cordier, J.-Ch. Moreno, E. Frayssinet, F. Semond
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 023511 (2012)
https://doi.org/10.1063/1.3677949
Published: January 2012
View article titled, Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV
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Journal Articles

Optical anisotropies of Si grown on step-graded SiGe(110) layers

R. E. Balderas-Navarro, L. F. Lastras-Martínez, K. Arimoto, R. Castro-García, O. Villalobos-Aguilar, A. Lastras-Martínez, K. Nakagawa, K. Sawano, Y. Shiraki, N. Usami, K. Nakajima
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 091904 (2010)
https://doi.org/10.1063/1.3339881
Published: March 2010
View article titled, Optical anisotropies of Si grown on step-graded SiGe(110) layers
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Journal Articles

Reconstruction Induced Surface Strain in GaAs (001) Surfaces Characterized by Reflectance Modulated Spectroscopies

L. F. Lastras‐Martínez, J. M. Flores‐Camacho, R. E. Balderas‐Navarro, A. Lastras‐Martínez, M. Cardona
Journal: AIP Conference Proceedings
AIP Conf. Proc. 893, 11–12 (2007)
https://doi.org/10.1063/1.2729745
Published: April 2007
View article titled, Reconstruction Induced Surface Strain in GaAs (001) Surfaces Characterized by Reflectance Modulated Spectroscopies
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Journal Articles

Interfaces in Ga x In 1 − x As y Sb 1 − y ∕ Al x Ga 1 − x As y Sb 1 − y multi-quantum-well heterostructures probed by transmittance anisotropy spectroscopy

E. A. Cerda-Méndez, R. E. Balderas-Navarro, A. Lastras-Martínez, L. F. Lastras-Martínez, A. Garnache, L. Cerutti, A. Jouillé
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 066107 (2005)
https://doi.org/10.1063/1.2058214
Published: September 2005
View article titled, Interfaces in Ga x In 1 − x As y Sb 1 − y ∕ Al x Ga 1 − x As y Sb 1 − y multi-quantum-well heterostructures probed by transmittance anisotropy spectroscopy
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Journal Articles

Influence of anisotropic in-plane strain on critical point resonances in reflectance difference data

K. Hingerl, R. E. Balderas-Navarro, A. Bonanni, D. Stifter
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 19, 1650–1657 (2001)
https://doi.org/10.1116/1.1388607
Published: July 2001
View article titled, Influence of anisotropic in-plane strain on critical point resonances in reflectance difference data
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Journal Articles

In situ observation of stress relaxation in CdTe/ZnTe heterostructures by reflectance-difference spectroscopy

R. E. Balderas-Navarro, K. Hingerl, A. Bonanni, H. Sitter, D. Stifter
Journal: Applied Physics Letters
Appl. Phys. Lett. 78, 3615–3617 (2001)
https://doi.org/10.1063/1.1378050
Published: June 2001
View article titled, <em>In situ</em> observation of stress relaxation in CdTe/ZnTe heterostructures by reflectance-difference spectroscopy
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Journal Articles

In situ reflectance-difference spectroscopy of doped CdTe and ZnTe grown by molecular beam epitaxy

R. E. Balderas-Navarro, K. Hingerl, W. Hilber, D. Stifter, A. Bonanni, H. Sitter
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 18, 2224–2228 (2000)
https://doi.org/10.1116/1.1306282
Published: July 2000
View article titled, <em>In situ</em> reflectance-difference spectroscopy of doped CdTe and ZnTe grown by molecular beam epitaxy
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Journal Articles

Photoreflectance spectroscopy of CdTe(001) around E 1 and E 1 +Δ 1 : linear electro-optic spectrum

A. Lastras-Martı́nez, R. E. Balderas-Navarro, P. Cantú-Alejandro, L. F. Lastras-Martı́nez
Journal: Journal of Applied Physics
J. Appl. Phys. 86, 2062–2065 (1999)
https://doi.org/10.1063/1.371009
Published: August 1999
View article titled, Photoreflectance spectroscopy of CdTe(001) around E 1 and E 1 +Δ 1 : linear electro-optic spectrum
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