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Journal Articles

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

C. H. Wang, G. Doornbos, G. Astromskas, G. Vellianitis, R. Oxland, M. C. Holland, M. L. Huang, C. H. Lin, C. H. Hsieh, Y. S. Chang, T. L. Lee, Y. Y. Chen, P. Ramvall, E. Lind, W. C. Hsu, L.-E. Wernersson, R. Droopad, M. Passlack, C. H. Diaz

AIP Advances 4, 047108 (2014)

https://doi.org/10.1063/1.4871187

Published: April 2014

View article titled, High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

Journal Articles

InAs hole inversion and bandgap interface state density of 2 × 10¹¹ cm⁻² eV⁻¹ at HfO₂/InAs interfaces

C. H. Wang, S. W. Wang, G. Doornbos, G. Astromskas, K. Bhuwalka, R. Contreras-Guerrero, M. Edirisooriya, J. S. Rojas-Ramirez, G. Vellianitis, R. Oxland, M. C. Holland, C. H. Hsieh, P. Ramvall, E. Lind, W. C. Hsu, L.-E. Wernersson, R. Droopad, M. Passlack, C. H. Diaz

Appl. Phys. Lett. 103, 143510 (2013)

https://doi.org/10.1063/1.4820477

Published: October 2013

View article titled, InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

Journal Articles

Properties of epitaxial BaTiO₃ deposited on GaAs

R. Contreras-Guerrero, J. P. Veazey, J. Levy, R. Droopad

Appl. Phys. Lett. 102, 012907 (2013)

https://doi.org/10.1063/1.4773988

Published: January 2013

View article titled, Properties of epitaxial BaTiO3 deposited on GaAs

Journal Articles

Gallium oxide and gadolinium gallium oxide insulators on Si δ -doped GaAs/AlGaAs heterostructures

G. W. Paterson, P. Longo, J. A. Wilson, A. J. Craven, A. R. Long, I. G. Thayne, M. Passlack, R. Droopad

J. Appl. Phys. 104, 103719 (2008)

https://doi.org/10.1063/1.3029661

Published: November 2008

View article titled, Gallium oxide and gadolinium gallium oxide insulators on Si δ -doped GaAs/AlGaAs heterostructures

Journal Articles

Electron energy barriers at interfaces of GaAs(100) with La Al O 3 and Gd 2 O 3

V. V. Afanas’ev, A. Stesmans, R. Droopad, M. Passlack, L. F. Edge, D. G. Schlom

Appl. Phys. Lett. 89, 092103 (2006)

https://doi.org/10.1063/1.2338893

Published: August 2006

View article titled, Electron energy barriers at interfaces of GaAs(100) with La Al O 3 and Gd 2 O 3

Journal Articles

Chemically resolved scanning tunneling microscopy imaging of Al on p -type Al 0.1 Ga 0.9 As ( 001 ) ‐ c ( 2 × 8 ) ∕ ( 2 × 4 )

M. J. Hale, D. L. Winn, T. J. Grassman, A. C. Kummel, R. Droopad

J. Chem. Phys. 122, 124702 (2005)

https://doi.org/10.1063/1.1846051

Published: March 2005

View article titled, Chemically resolved scanning tunneling microscopy imaging of Al on p -type Al 0.1 Ga 0.9 As ( 001 ) ‐ c ( 2 × 8 ) ∕ ( 2 × 4 )

Journal Articles

Epitaxial BiFeO 3 thin films on Si

J. Wang, H. Zheng, Z. Ma, S. Prasertchoung, M. Wuttig, R. Droopad, J. Yu, K. Eisenbeiser, R. Ramesh

Appl. Phys. Lett. 85, 2574–2576 (2004)

https://doi.org/10.1063/1.1799234

Published: September 2004

View article titled, Epitaxial BiFeO 3 thin films on Si

Journal Articles

Heteroepitaxy of Sr Ti O 3 on vicinal Si(001): Growth and kinetic effects

Y. Liang, Y. Wei, X. M. Hu, Z. Yu, R. Droopad, H. Li, K. Moore

J. Appl. Phys. 96, 3413–3416 (2004)

https://doi.org/10.1063/1.1778214

Published: September 2004

View article titled, Heteroepitaxy of Sr Ti O 3 on vicinal Si(001): Growth and kinetic effects

Journal Articles

Hetero-epitaxy of perovskite oxides on GaAs ( 001 ) by molecular beam epitaxy

Y. Liang, J. Kulik, T. C. Eschrich, R. Droopad, Z. Yu, P. Maniar

Appl. Phys. Lett. 85, 1217–1219 (2004)

https://doi.org/10.1063/1.1783016

Published: August 2004

View article titled, Hetero-epitaxy of perovskite oxides on GaAs ( 001 ) by molecular beam epitaxy

Journal Articles

Displacive phase transition in SrTiO 3 thin films grown on Si(001)

F. S. Aguirre-Tostado, A. Herrera-Gómez, J. C. Woicik, R. Droopad, Z. Yu, D. G. Schlom, J. Karapetrova, P. Zschack, P. Pianetta

J. Vac. Sci. Technol. A 22, 1356–1360 (2004)

https://doi.org/10.1116/1.1765657

Published: July 2004

View article titled, Displacive phase transition in SrTiO 3 thin films grown on Si(001)

Journal Articles

High-performance carbon nanotube transistors on SrTiO 3 / Si substrates

B. M. Kim, T. Brintlinger, E. Cobas, M. S. Fuhrer, Haimei Zheng, Z. Yu, R. Droopad, J. Ramdani, K. Eisenbeiser

Appl. Phys. Lett. 84, 1946–1948 (2004)

https://doi.org/10.1063/1.1682691

Published: March 2004

View article titled, High-performance carbon nanotube transistors on SrTiO 3 / Si substrates

Journal Articles

Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si

T. Zhao, S. B. Ogale, S. R. Shinde, R. Ramesh, R. Droopad, J. Yu, K. Eisenbeiser, J. Misewich

Appl. Phys. Lett. 84, 750–752 (2004)

https://doi.org/10.1063/1.1644321

Published: February 2004

View article titled, Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si

Journal Articles

Growth and physical properties of Ga 2 O 3 thin films on GaAs(001) substrate by molecular-beam epitaxy

Z. Yu, C. D. Overgaard, R. Droopad, M. Passlack, J. K. Abrokwah

Appl. Phys. Lett. 82, 2978–2980 (2003)

https://doi.org/10.1063/1.1572478

Published: May 2003

View article titled, Growth and physical properties of Ga 2 O 3 thin films on GaAs(001) substrate by molecular-beam epitaxy

Journal Articles

Two-dimensional growth of high-quality strontium titanate thin films on Si

H. Li, X. Hu, Y. Wei, Z. Yu, X. Zhang, R. Droopad, A. A. Demkov, J. Edwards, Jr., K. Moore, W. Ooms, J. Kulik, P. Fejes

J. Appl. Phys. 93, 4521–4525 (2003)

https://doi.org/10.1063/1.1562001

Published: April 2003

View article titled, Two-dimensional growth of high-quality strontium titanate thin films on Si

Journal Articles

Thermally induced oxide crystallinity and interface destruction in Ga 2 O 3 – GaAs structures

M. Passlack, J. K. Abrokwah, Z. Yu, R. Droopad, C. Overgaard, H. Kawayoshi

Appl. Phys. Lett. 82, 1691–1693 (2003)

https://doi.org/10.1063/1.1560875

Published: March 2003

View article titled, Thermally induced oxide crystallinity and interface destruction in Ga 2 O 3 – GaAs structures

Journal Articles

The interface of epitaxial SrTiO 3 on silicon: in situ and ex situ studies

Xiaoming Hu, H. Li, Y. Liang, Y. Wei, Z. Yu, D. Marshall, J. Edwards, Jr., R. Droopad, X. Zhang, A. A. Demkov, K. Moore, J. Kulik

Appl. Phys. Lett. 82, 203–205 (2003)

https://doi.org/10.1063/1.1536247

Published: January 2003

View article titled, The interface of epitaxial SrTiO 3 on silicon: in situ and ex situ studies

Journal Articles

Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si

V. Nagarajan, A. Stanishevsky, L. Chen, T. Zhao, B.-T. Liu, J. Melngailis, A. L. Roytburd, R. Ramesh, J. Finder, Z. Yu, R. Droopad, K. Eisenbeiser

Appl. Phys. Lett. 81, 4215–4217 (2002)

https://doi.org/10.1063/1.1516857

Published: November 2002

View article titled, Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si

Journal Articles

Passivation of defects at the SrTiO 3 / Si interface with H and H 2

R. J. Browne, E. A. Ogryzlo, K. Eisenbeiser, Z. Yu, R. Droopad, C. Overgaard

Appl. Phys. Lett. 80, 2699–2700 (2002)

https://doi.org/10.1063/1.1472475

Published: April 2002

View article titled, Passivation of defects at the SrTiO 3 / Si interface with H and H 2

Journal Articles

Direct observation of atomic disordering at the SrTiO 3 / Si interface due to oxygen diffusion

V. Shutthanandan, S. Thevuthasan, Y. Liang, E. M. Adams, Z. Yu, R. Droopad

Appl. Phys. Lett. 80, 1803–1805 (2002)

https://doi.org/10.1063/1.1456261

Published: March 2002

View article titled, Direct observation of atomic disordering at the SrTiO 3 / Si interface due to oxygen diffusion

Journal Articles

Epitaxial ferroelectric Pb(Zr, Ti)O 3 thin films on Si using SrTiO 3 template layers

Y. Wang, C. Ganpule, B. T. Liu, H. Li, K. Mori, B. Hill, M. Wuttig, R. Ramesh, J. Finder, Z. Yu, R. Droopad, K. Eisenbeiser

Appl. Phys. Lett. 80, 97–99 (2002)

https://doi.org/10.1063/1.1428413

Published: January 2002

View article titled, Epitaxial ferroelectric Pb(Zr, Ti)O 3 thin films on Si using SrTiO 3 template layers

NARROW

Topics

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

InAs hole inversion and bandgap interface state density of 2 × 10¹¹ cm⁻² eV⁻¹ at HfO₂/InAs interfaces

Properties of epitaxial BaTiO₃ deposited on GaAs

Gallium oxide and gadolinium gallium oxide insulators on Si δ -doped GaAs/AlGaAs heterostructures

Electron energy barriers at interfaces of GaAs(100) with La Al O 3 and Gd 2 O 3

Chemically resolved scanning tunneling microscopy imaging of Al on p -type Al 0.1 Ga 0.9 As ( 001 ) ‐ c ( 2 × 8 ) ∕ ( 2 × 4 )

Epitaxial BiFeO 3 thin films on Si

Heteroepitaxy of Sr Ti O 3 on vicinal Si(001): Growth and kinetic effects

Hetero-epitaxy of perovskite oxides on GaAs ( 001 ) by molecular beam epitaxy

Displacive phase transition in SrTiO 3 thin films grown on Si(001)

High-performance carbon nanotube transistors on SrTiO 3 / Si substrates

Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si

Growth and physical properties of Ga 2 O 3 thin films on GaAs(001) substrate by molecular-beam epitaxy

Two-dimensional growth of high-quality strontium titanate thin films on Si

Thermally induced oxide crystallinity and interface destruction in Ga 2 O 3 – GaAs structures

The interface of epitaxial SrTiO 3 on silicon: in situ and ex situ studies

Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si

Passivation of defects at the SrTiO 3 / Si interface with H and H 2

Direct observation of atomic disordering at the SrTiO 3 / Si interface due to oxygen diffusion

Epitaxial ferroelectric Pb(Zr, Ti)O 3 thin films on Si using SrTiO 3 template layers

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