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R. D. Vispute
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Journal Articles

Niobium doped TiO 2 : Intrinsic transparent metallic anatase versus highly resistive rutile phase

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S. X. Zhang, D. C. Kundaliya, W. Yu, S. Dhar, S. Y. Young, L. G. Salamanca-Riba, S. B. Ogale, R. D. Vispute, T. Venkatesan
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 013701 (2007)
https://doi.org/10.1063/1.2750407
Published: July 2007
View articletitled, Niobium doped TiO 2 : Intrinsic transparent metallic anatase versus highly resistive rutile phase
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Journal Articles

Epitaxy and recrystallization kinetics of TaC thin films on SiC for high temperature processing of semiconductor devices

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R. D. Vispute, S. Hullavarad, A. Luykx, D. Young, S. Dhar, T. Venkatesan, K. A. Jones, T. S. Zheleva, M. Ervin, M. Derenge
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 241917 (2007)
https://doi.org/10.1063/1.2748858
Published: June 2007
View articletitled, Epitaxy and recrystallization kinetics of TaC thin films on SiC for high temperature processing of semiconductor devices
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Journal Articles

Oxygen-dependent phosphorus networking in ZnO thin films grown by low temperature rf sputtering

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D. Elizabeth Pugel, R. D. Vispute, S. S. Hullavarad, T. Venkatesan, B. Varughese
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 063538 (2007)
https://doi.org/10.1063/1.2715551
Published: March 2007
View articletitled, Oxygen-dependent phosphorus networking in ZnO thin films grown by low temperature rf sputtering
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Journal Articles

Microstructural study of epitaxial Zn 1 − x Mg x O composition spreads

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L. A. Bendersky, I. Takeuchi, K.-S. Chang, W. Yang, S. Hullavarad, R. D. Vispute
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 083526 (2005)
https://doi.org/10.1063/1.2061887
Published: October 2005
View articletitled, Microstructural study of epitaxial Zn 1 − x Mg x O composition spreads
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Journal Articles

Realization of Mg ( x = 0.15 ) Zn ( 1 − x = 0.85 ) O -based metal-semiconductor-metal UV detector on quartz and sapphire

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S. S. Hullavarad, S. Dhar, B. Varughese, I. Takeuchi, T. Venkatesan, R. D. Vispute
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 23, 982–985 (2005)
https://doi.org/10.1116/1.1913677
Published: June 2005
View articletitled, Realization of Mg ( x = 0.15 ) Zn ( 1 − x = 0.85 ) O -based metal-semiconductor-metal UV detector on quartz and sapphire
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Journal Articles

Effects of high-temperature anneals on 4H–SiC Implanted with Al or Al and Si

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K. A. Jones, P. B. Shah, T. S. Zheleva, M. H. Ervin, M. A. Derenge, J. A. Freitas, S. Harmon, J. McGee, R. D. Vispute
Journal: Journal of Applied Physics
J. Appl. Phys. 96, 5613–5618 (2004)
https://doi.org/10.1063/1.1798404
Published: November 2004
View articletitled, Effects of high-temperature anneals on 4H–SiC Implanted with Al or Al and Si
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Journal Articles

Publisher’s Note: “Monolithic multichannel ultraviolet detector arrays and continuous phase evolution in Mg x Zn 1−x O composition spreads” [J. Appl. Phys. 94 , 7336 (2003)]

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I. Takeuchi, W. Yang, K.-S. Chang, M. A. Aronova, T. Venkatesan, R. D. Vispute, L. A. Bendersky
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 3840 (2004)
https://doi.org/10.1063/1.1688815
Published: April 2004
View articletitled, Publisher’s Note: “Monolithic multichannel ultraviolet detector arrays and continuous phase evolution in Mg x Zn 1−x O composition spreads” [J. Appl. Phys. 94 , 7336 (2003)]
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Journal Articles

Effect of dislocations on luminescence properties of silicon-doped GaN grown by metalorganic chemical vapor deposition method

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Jahangir Alam, Ravi Bathe, R. D. Vispute, John M. Zavada, Cole W. Litton, Agis A. Iliadis, S. Noor Mohammad
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 624–629 (2004)
https://doi.org/10.1116/1.1667509
Published: March 2004
View articletitled, Effect of dislocations on luminescence properties of silicon-doped GaN grown by metalorganic chemical vapor deposition method
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Journal Articles

Deep-level transient spectroscopy study on double implanted n + –p and p + –n 4H-SiC diodes

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Souvick Mitra, Mulpuri V. Rao, N. Papanicolaou, K. A. Jones, M. Derenge, O. W. Holland, R. D. Vispute, S. R. Wilson
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 69–75 (2004)
https://doi.org/10.1063/1.1623631
Published: January 2004
View articletitled, Deep-level transient spectroscopy study on double implanted n + –p and p + –n 4H-SiC diodes
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Journal Articles

Monolithic multichannel ultraviolet detector arrays and continuous phase evolution in Mg x Zn 1−x O composition spreads

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I. Takeuchi, W. Yang, K.-S. Chang, M. A. Aronova, T. Venkatesan, R. D. Vispute, L. A. Bendersky
Journal: Journal of Applied Physics
J. Appl. Phys. 94, 7336–7340 (2003)
https://doi.org/10.1063/1.1623923
Published: December 2003
View articletitled, Monolithic multichannel ultraviolet detector arrays and continuous phase evolution in Mg x Zn 1−x O composition spreads
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Journal Articles

Electrical Activation Processes in Ion Implanted SiC Device Structures

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K. A. Jones, M. H. Ervin, P. B. Shah, M. A. Derenge, R. D. Vispute, T. Venkatesan, J. A. Freitas
Journal: AIP Conference Proceedings
AIP Conf. Proc. 680, 694–696 (2003)
https://doi.org/10.1063/1.1619809
Published: August 2003
View articletitled, Electrical Activation Processes in Ion Implanted SiC Device Structures
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Journal Articles

Compositionally-tuned epitaxial cubic Mg x Zn 1−x O on Si(100) for deep ultraviolet photodetectors

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W. Yang, S. S. Hullavarad, B. Nagaraj, I. Takeuchi, R. P. Sharma, T. Venkatesan, R. D. Vispute, H. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 3424–3426 (2003)
https://doi.org/10.1063/1.1576309
Published: May 2003
View articletitled, Compositionally-tuned epitaxial cubic Mg x Zn 1−x O on Si(100) for deep ultraviolet photodetectors
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Journal Articles

Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n -type GaN

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Abhishek Motayed, Ravi Bathe, Mark C. Wood, Ousmane S. Diouf, R. D. Vispute, S. Noor Mohammad
Journal: Journal of Applied Physics
J. Appl. Phys. 93, 1087–1094 (2003)
https://doi.org/10.1063/1.1528294
Published: January 2003
View articletitled, Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n -type GaN
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Journal Articles

Realization of band gap above 5.0 eV in metastable cubic-phase Mg x Zn 1−x O alloy films

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S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, H. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 80, 1529–1531 (2002)
https://doi.org/10.1063/1.1456266
Published: March 2002
View articletitled, Realization of band gap above 5.0 eV in metastable cubic-phase Mg x Zn 1−x O alloy films
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Journal Articles

Ultraviolet photoconductive detector based on epitaxial Mg 0.34 Zn 0.66 O thin films

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W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, H. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 78, 2787–2789 (2001)
https://doi.org/10.1063/1.1368378
Published: April 2001
View articletitled, Ultraviolet photoconductive detector based on epitaxial Mg 0.34 Zn 0.66 O thin films
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Journal Articles

Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH 3

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Maoqi He, Indira Minus, Piezhen Zhou, S. Noor Mohammed, Joshua B. Halpern, Randy Jacobs, Wendy L. Sarney, Lourdes Salamanca-Riba, R. D. Vispute
Journal: Applied Physics Letters
Appl. Phys. Lett. 77, 3731–3733 (2000)
https://doi.org/10.1063/1.1329863
Published: December 2000
View articletitled, Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH 3
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Journal Articles

Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire

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S. Choopun, R. D. Vispute, W. Noch, A. Balsamo, R. P. Sharma, T. Venkatesan, A. Iliadis, D. C. Look
Journal: Applied Physics Letters
Appl. Phys. Lett. 75, 3947–3949 (1999)
https://doi.org/10.1063/1.125503
Published: December 1999
View articletitled, Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire
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Journal Articles

Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 °C

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C. J. Scozzie, A. J. Lelis, F. B. McLean, R. D. Vispute, S. Choopun, A. Patel, R. P. Sharma, T. Venkatesan
Journal: Journal of Applied Physics
J. Appl. Phys. 86, 4052–4054 (1999)
https://doi.org/10.1063/1.371329
Published: October 1999
View articletitled, Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 °C
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Journal Articles

Effectiveness of AlN encapsulant in annealing ion-implanted SiC

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Evan M. Handy, Mulpuri V. Rao, K. A. Jones, M. A. Derenge, P. H. Chi, R. D. Vispute, T. Venkatesan, N. A. Papanicolaou, J. Mittereder
Journal: Journal of Applied Physics
J. Appl. Phys. 86, 746–751 (1999)
https://doi.org/10.1063/1.370798
Published: July 1999
View articletitled, Effectiveness of AlN encapsulant in annealing ion-implanted SiC
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Journal Articles

Ohmic contacts to p-6 H–SiC using focused ion-beam surface-modification and pulsed laser epitaxial TiN deposition

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A. A. Iliadis, S. N. Andronescu, K. Edinger, J. H. Orloff, R. D. Vispute, V. Talyansky, R. P. Sharma, T. Venkatesan, M. C. Wood, K. A. Jones
Journal: Applied Physics Letters
Appl. Phys. Lett. 73, 3545–3547 (1998)
https://doi.org/10.1063/1.122802
Published: December 1998
View articletitled, Ohmic contacts to p-6 H–SiC using focused ion-beam surface-modification and pulsed laser epitaxial TiN deposition
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