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R. D. Dupuis
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Journal Articles

Thermal characterization of gallium nitride p-i-n diodes

J. Dallas, G. Pavlidis, B. Chatterjee, J. S. Lundh, M. Ji, J. Kim, T. Kao, T. Detchprohm, R. D. Dupuis, S. Shen, S. Graham, S. Choi
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 073503 (2018)
https://doi.org/10.1063/1.5006796
Published: February 2018
View article titled, Thermal characterization of gallium nitride p-i-n diodes
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Includes: Supplementary data
Journal Articles

Hydrogen-related, deeply bound excitons in Mg-doped GaN films

R. Juday, A. M. Fischer, Y. Huang, J. Y. Huang, H. J. Kim, J.-H. Ryou, R. D. Dupuis, D. P. Bour, F. A. Ponce
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 082103 (2013)
https://doi.org/10.1063/1.4819029
Published: August 2013
View article titled, Hydrogen-related, deeply bound excitons in Mg-doped GaN films
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Journal Articles

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

T. Li, Q. Y. Wei, A. M. Fischer, J. Y. Huang, Y. U. Huang, F. A. Ponce, J. P. Liu, Z. Lochner, J.-H. Ryou, R. D. Dupuis
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 041115 (2013)
https://doi.org/10.1063/1.4789758
Published: February 2013
View article titled, The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells
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Journal Articles

Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

M. Abid, T. Moudakir, G. Orsal, S. Gautier, A. En Naciri, Z. Djebbour, J.-H. Ryou, G. Patriarche, L. Largeau, H. J. Kim, Z. Lochner, K. Pantzas, D. Alamarguy, F. Jomard, R. D. Dupuis, J.-P. Salvestrini, P. L. Voss, A. Ougazzaden
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 051101 (2012)
https://doi.org/10.1063/1.3679703
Published: January 2012
View article titled, Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications
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Journal Articles

Optical Properties of Strain‐balanced InAs / InAs 1‐ x Sb x Type‐II Superlattices

E. H. Steenbergen, Y. Huang, J.‐H. Ryou, R. D. Dupuis, K. Nunna, D. L. Huffaker, Y.‐H. Zhang
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1416, 122–125 (2011)
https://doi.org/10.1063/1.3671713
Published: December 2011
View article titled, Optical Properties of Strain‐balanced InAs / InAs 1‐ x Sb x Type‐II Superlattices
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Journal Articles

Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors

Y. Huang, J.-H. Ryou, R. D. Dupuis, F. Dixon, M. Feng, N. Holonyak, Jr., D. Kuciauskas
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 103502 (2011)
https://doi.org/10.1063/1.3633345
Published: September 2011
View article titled, Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors
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Journal Articles

Structural and optical characterization of type-II InAs/InAs1−xSbx superlattices grown by metalorganic chemical vapor deposition

E. H. Steenbergen, Y. Huang, J.-H. Ryou, L. Ouyang, J.-J. Li, D. J. Smith, R. D. Dupuis, Y.-H. Zhang
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 071111 (2011)
https://doi.org/10.1063/1.3625429
Published: August 2011
View article titled, Structural and optical characterization of type-II InAs/InAs<sub>1−x</sub>Sb<sub>x</sub> superlattices grown by metalorganic chemical vapor deposition
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Journal Articles

Erratum: “High efficiency GaN-based light-emitting diodes fabricated on dielectric-mask-embedded structures” [Appl. Phys. Lett. 95, 011108 (2009)]

J. W. Lee, C. Sone, Y. Park, S.-N. Lee, J.-H. Ryou, R. D. Dupuis, C.-H. Hong, H. Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 139902 (2009)
https://doi.org/10.1063/1.3223585
Published: October 2009
View article titled, Erratum: “High efficiency GaN-based light-emitting diodes fabricated on dielectric-mask-embedded structures” [Appl. Phys. Lett. 95, 011108 (2009)]
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Journal Articles

High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures

J. W. Lee, C. Sone, Y. Park, S.-N. Lee, J.-H. Ryou, R. D. Dupuis, C.-H. Hong, H. Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 011108 (2009)
https://doi.org/10.1063/1.3166868
Published: July 2009
View article titled, High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures
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Journal Articles

Erratic dislocations within funnel defects in AlN templates for AlGaN epitaxial layer growth

M. E. Hawkridge, Z. Liliental-Weber, H. J. Kim, S. Choi, D. Yoo, J.-H. Ryou, R. D. Dupuis
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 171912 (2009)
https://doi.org/10.1063/1.3129870
Published: May 2009
View article titled, Erratic dislocations within funnel defects in AlN templates for AlGaN epitaxial layer growth
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Journal Articles

Bandgap bowing in BGaN thin films

A. Ougazzaden, S. Gautier, T. Moudakir, Z. Djebbour, Z. Lochner, S. Choi, H. J. Kim, J.-H. Ryou, R. D. Dupuis, A. A. Sirenko
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 083118 (2008)
https://doi.org/10.1063/1.2977588
Published: August 2008
View article titled, Bandgap bowing in BGaN thin films
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Journal Articles

Transistor laser with emission wavelength at 1544 nm

F. Dixon, M. Feng, N. Holonyak, Jr., Yong Huang, X. B. Zhang, J. H. Ryou, R. D. Dupuis
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 021111 (2008)
https://doi.org/10.1063/1.2958228
Published: July 2008
View article titled, Transistor laser with emission wavelength at 1544 nm
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Journal Articles

Barrier effect on hole transport and carrier distribution in In Ga N ∕ Ga N multiple quantum well visible light-emitting diodes

J. P. Liu, J.-H. Ryou, R. D. Dupuis, J. Han, G. D. Shen, H. B. Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 021102 (2008)
https://doi.org/10.1063/1.2957667
Published: July 2008
View article titled, Barrier effect on hole transport and carrier distribution in In Ga N ∕ Ga N multiple quantum well visible light-emitting diodes
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Journal Articles

III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge

J. P. Liu, J.-H. Ryou, D. Yoo, Y. Zhang, J. Limb, C. A. Horne, S.-C. Shen, R. D. Dupuis, A. D. Hanser, E. A. Preble, K. R. Evans
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 133513 (2008)
https://doi.org/10.1063/1.2906372
Published: April 2008
View article titled, III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge
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Journal Articles

Control of quantum-confined Stark effect in InGaN ∕ GaN multiple quantum well active region by p -type layer for III-nitride-based visible light emitting diodes

J.-H. Ryou, W. Lee, J. Limb, D. Yoo, J. P. Liu, R. D. Dupuis, Z. H. Wu, A. M. Fischer, F. A. Ponce
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 101113 (2008)
https://doi.org/10.1063/1.2894514
Published: March 2008
View article titled, Control of quantum-confined Stark effect in InGaN ∕ GaN multiple quantum well active region by p -type layer for III-nitride-based visible light emitting diodes
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Journal Articles

Blue light emitting diodes grown on freestanding (11-20) a -plane GaN substrates

J. P. Liu, J. B. Limb, J.-H. Ryou, D. Yoo, C. A. Horne, R. D. Dupuis, Z. H. Wu, A. M. Fischer, F. A. Ponce, A. D. Hanser, L. Liu, E. A. Preble, K. R. Evans
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 011123 (2008)
https://doi.org/10.1063/1.2832645
Published: January 2008
View article titled, Blue light emitting diodes grown on freestanding (11-20) a -plane GaN substrates
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Journal Articles

Modulation of high current gain ( β > 49 ) light-emitting In Ga N ∕ Ga N heterojunction bipolar transistors

B. F. Chu-Kung, C. H. Wu, G. Walter, M. Feng, N. Holonyak, Jr., T. Chung, J.-H. Ryou, R. D. Dupuis
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 232114 (2007)
https://doi.org/10.1063/1.2821380
Published: December 2007
View article titled, Modulation of high current gain ( β &gt; 49 ) light-emitting In Ga N ∕ Ga N heterojunction bipolar transistors
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Journal Articles

Effect of internal electrostatic fields in InGaN quantum wells on the properties of green light emitting diodes

Z. H. Wu, A. M. Fischer, F. A. Ponce, W. Lee, J. H. Ryou, J. Limb, D. Yoo, R. D. Dupuis
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 041915 (2007)
https://doi.org/10.1063/1.2760160
Published: July 2007
View article titled, Effect of internal electrostatic fields in InGaN quantum wells on the properties of green light emitting diodes
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Journal Articles

Experimental demonstration of the polarization-dependent photon-mediated carrier redistribution in tunneling injection InP quantum-dot lasers with external-grating feedback

J. Kim, P. K. Kondratko, S. L. Chuang, G. Walter, N. Holonyak, Jr., R. D. Heller, X. B. Zhang, R. D. Dupuis
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 211102 (2007)
https://doi.org/10.1063/1.2741118
Published: May 2007
View article titled, Experimental demonstration of the polarization-dependent photon-mediated carrier redistribution in tunneling injection InP quantum-dot lasers with external-grating feedback
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Journal Articles

Improved surface and structural properties of In As ∕ Ga Sb superlattices on (001) GaSb substrate by introducing an InAsSb layer at interfaces

X. B. Zhang, J. H. Ryou, R. D. Dupuis, C. Xu, S. Mou, A. Petschke, K. C. Hsieh, S. L. Chuang
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 131110 (2007)
https://doi.org/10.1063/1.2717524
Published: March 2007
View article titled, Improved surface and structural properties of In As ∕ Ga Sb superlattices on (001) GaSb substrate by introducing an InAsSb layer at interfaces
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