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Journal Articles

Sub-20 kHz low-frequency noise near ultraviolet butt-coupled fiber Bragg grating external cavity laser diode

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R. Kervazo, G. Perin, A. Congar, L. Lablonde, R. Butté, N. Grandjean, L. Bodiou, J. Charrier, S. Trebaol
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 161102 (2024)
https://doi.org/10.1063/5.0235240
Published: October 2024
View articletitled, Sub-20 kHz low-frequency noise near ultraviolet butt-coupled fiber Bragg grating external cavity laser diode
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Journal Articles

Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

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M. Hrytsaienko, M. Gallart, M. Ziegler, O. Crégut, S. Tamariz, R. Butté, N. Grandjean, B. Hönerlage, P. Gilliot
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 054301 (2021)
https://doi.org/10.1063/5.0038733
Published: February 2021
View articletitled, Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range
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Journal Articles

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

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L. Freter, Y. Wang, M. Schnedler, J.-F. Carlin, R. Butté, N. Grandjean, H. Eisele, R. E. Dunin-Borkowski, Ph. Ebert
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 185701 (2020)
https://doi.org/10.1063/5.0020652
Published: November 2020
View articletitled, Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions
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Journal Articles

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Editor’s PickOpen Access
W. Liu, C. Haller, Y. Chen, T. Weatherley, J.-F. Carlin, G. Jacopin, R. Butté, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 222106 (2020)
https://doi.org/10.1063/5.0004321
Published: June 2020
View articletitled, Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime
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Includes: Supplementary data
Journal Articles

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

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A. Y. Polyakov, C. Haller, N. B. Smirnov, A. S. Shiko, I. V. Shchemerov, S. V. Chernykh, L. A. Alexanyan, P. B. Lagov, Yu. S. Pavlov, J.-F. Carlin, M. Mosca, R. Butté, N. Grandjean, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 125708 (2019)
https://doi.org/10.1063/1.5122314
Published: September 2019
View articletitled, Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
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Includes: Supplementary data
Journal Articles

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

Open Access
C. Haller, J.-F. Carlin, G. Jacopin, W. Liu, D. Martin, R. Butté, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 111106 (2018)
https://doi.org/10.1063/1.5048010
Published: September 2018
View articletitled, GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
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Includes: Supplementary data
Journal Articles

Excited states of neutral donor bound excitons in GaN

Open Access
G. Callsen, T. Kure, M. R. Wagner, R. Butté, N. Grandjean
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 215702 (2018)
https://doi.org/10.1063/1.5028370
Published: June 2018
View articletitled, Excited states of neutral donor bound excitons in GaN
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Journal Articles

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

FeaturedScilightOpen Access
C. Haller, J.-F. Carlin, G. Jacopin, D. Martin, R. Butté, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 262101 (2017)
https://doi.org/10.1063/1.5007616
Published: December 2017
View articletitled, Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
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Journal Articles

Fermi-level pinning and intrinsic surface states of Al 1 − x In x N ( 10 1 ¯ ) surfaces

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V. Portz, M. Schnedler, L. Lymperakis, J. Neugebauer, H. Eisele, J.-F. Carlin, R. Butté, N. Grandjean, R. E. Dunin-Borkowski, Ph. Ebert
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 022104 (2017)
https://doi.org/10.1063/1.4973765
Published: January 2017
View articletitled, Fermi-level pinning and intrinsic surface states of Al 1 − x In x N ( 10 1 ¯ ) surfaces
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Journal Articles

Strain and compositional fluctuations in Al 0.81 In 0.19 N /GaN heterostructures

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V. Portz, M. Schnedler, M. Duchamp, F.-M. Hsiao, H. Eisele, J.-F. Carlin, R. Butté, N. Grandjean, R. E. Dunin-Borkowski, Ph. Ebert
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 132102 (2016)
https://doi.org/10.1063/1.4963184
Published: September 2016
View articletitled, Strain and compositional fluctuations in Al 0.81 In 0.19 N /GaN heterostructures
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Journal Articles

Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N

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L. Rigutti, L. Mancini, D. Hernández-Maldonado, W. Lefebvre, E. Giraud, R. Butté, J. F. Carlin, N. Grandjean, D. Blavette, F. Vurpillot
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 105704 (2016)
https://doi.org/10.1063/1.4943612
Published: March 2016
View articletitled, Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N
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Includes: Supplementary data
Journal Articles

Vectorial near-field imaging of a GaN based photonic crystal cavity

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F. La China, F. Intonti, N. Caselli, F. Lotti, A. Vinattieri, N. Vico Triviño, J.-F. Carlin, R. Butté, N. Grandjean, M. Gurioli
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 101110 (2015)
https://doi.org/10.1063/1.4930892
Published: September 2015
View articletitled, Vectorial near-field imaging of a GaN based photonic crystal cavity
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Journal Articles

Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

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Ž. Gačević, G. Rossbach, R. Butté, F. Réveret, M. Glauser, J. Levrat, G. Cosendey, J.-F. Carlin, N. Grandjean, E. Calleja
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 233102 (2013)
https://doi.org/10.1063/1.4846218
Published: December 2013
View articletitled, Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques
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Journal Articles

High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate

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N. Vico Triviño, G. Rossbach, U. Dharanipathy, J. Levrat, A. Castiglia, J.-F. Carlin, K. A. Atlasov, R. Butté, R. Houdré, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 071103 (2012)
https://doi.org/10.1063/1.3684630
Published: February 2012
View articletitled, High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate
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Journal Articles

Polariton lasing in a hybrid bulk ZnO microcavity

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T. Guillet, M. Mexis, J. Levrat, G. Rossbach, C. Brimont, T. Bretagnon, B. Gil, R. Butté, N. Grandjean, L. Orosz, F. Réveret, J. Leymarie, J. Zúñiga-Pérez, M. Leroux, F. Semond, S. Bouchoule
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 161104 (2011)
https://doi.org/10.1063/1.3650268
Published: October 2011
View articletitled, Polariton lasing in a hybrid bulk ZnO microcavity
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Journal Articles

Al 0.83 In 0.17 N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

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A. Castiglia, E. Feltin, G. Cosendey, A. Altoukhov, J.-F. Carlin, R. Butté, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 193506 (2009)
https://doi.org/10.1063/1.3138136
Published: May 2009
View articletitled, Al 0.83 In 0.17 N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers
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Journal Articles

Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN ∕ AlGaN quantum wells

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F. Stokker-Cheregi, A. Vinattieri, E. Feltin, D. Simeonov, J. Levrat, J.-F. Carlin, R. Butté, N. Grandjean, M. Gurioli
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 152105 (2008)
https://doi.org/10.1063/1.2973897
Published: October 2008
View articletitled, Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN ∕ AlGaN quantum wells
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Journal Articles

High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

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D. Simeonov, E. Feltin, A. Altoukhov, A. Castiglia, J.-F. Carlin, R. Butté, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 171102 (2008)
https://doi.org/10.1063/1.2917452
Published: April 2008
View articletitled, High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers
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Journal Articles

Nonpolar GaN-based microcavity using Al N ∕ Ga N distributed Bragg reflector

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T. Zhu, A. Dussaigne, G. Christmann, C. Pinquier, E. Feltin, D. Martin, R. Butté, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 061114 (2008)
https://doi.org/10.1063/1.2857500
Published: February 2008
View articletitled, Nonpolar GaN-based microcavity using Al N ∕ Ga N distributed Bragg reflector
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Journal Articles

Blue lasing at room temperature in high quality factor Ga N ∕ Al In N microdisks with InGaN quantum wells

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D. Simeonov, E. Feltin, H.-J. Bühlmann, T. Zhu, A. Castiglia, M. Mosca, J.-F. Carlin, R. Butté, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 061106 (2007)
https://doi.org/10.1063/1.2460234
Published: February 2007
View articletitled, Blue lasing at room temperature in high quality factor Ga N ∕ Al In N microdisks with InGaN quantum wells
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