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Journal Articles

Influence of Xe+ and Ga+ milling species on the cathodoluminescence of wurtzite and zincblende GaN

K. Loeto, S. M. Fairclough, I. Griffiths, G. Kusch, S. Ghosh, M. J. Kappers, N. Young, R. A. Oliver
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 045702 (2024)
https://doi.org/10.1063/5.0211529
Published: July 2024
View article titled, Influence of Xe<sup>+</sup> and Ga<sup>+</sup> milling species on the cathodoluminescence of wurtzite and zincblende GaN
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Journal Articles

Microstructure and reflectance of porous GaN distributed Bragg reflectors on silicon substrates

S. Ghosh, M. Sarkar, M. Frentrup, M. J. Kappers, R. A. Oliver
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 043105 (2024)
https://doi.org/10.1063/5.0216672
Published: July 2024
View article titled, Microstructure and reflectance of porous GaN distributed Bragg reflectors on silicon substrates
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Journal Articles

Cubic GaN and InGaN/GaN quantum wells

Featured
D. J. Binks, P. Dawson, R. A. Oliver, D. J. Wallis
Journal: Applied Physics Reviews
Appl. Phys. Rev. 9, 041309 (2022)
https://doi.org/10.1063/5.0097558
Published: November 2022
View article titled, Cubic GaN and InGaN/GaN quantum wells
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Journal Articles

Radiation effects in ultra-thin GaAs solar cells

Featured
A. Barthel, L. Sayre, G. Kusch, R. A. Oliver, L. C. Hirst
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 184501 (2022)
https://doi.org/10.1063/5.0103381
Published: November 2022
View article titled, Radiation effects in ultra-thin GaAs solar cells
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Includes: Supplementary data
Journal Articles

The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers

D. Dyer, S. A. Church, M. Jain, M. J. Kappers, M. Frentrup, D. J. Wallis, R. A. Oliver, D. J. Binks
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 085705 (2021)
https://doi.org/10.1063/5.0057824
Published: August 2021
View article titled, The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers
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Includes: Supplementary data
Journal Articles

Pure single-photon emission from an InGaN/GaN quantum dot

M. J. Holmes, T. Zhu, F. C.-P. Massabuau, J. Jarman, R. A. Oliver, Y. Arakawa
Journal: APL Materials
APL Mater. 9, 061106 (2021)
https://doi.org/10.1063/5.0049488
Published: June 2021
View article titled, Pure single-photon emission from an InGaN/GaN quantum dot
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Journal Articles

Photoluminescence efficiency of zincblende InGaN/GaN quantum wells

S. A. Church, M. Quinn, K. Cooley-Greene, B. Ding, A. Gundimeda, M. J. Kappers, M. Frentrup, D. J. Wallis, R. A. Oliver, D. J. Binks
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 175702 (2021)
https://doi.org/10.1063/5.0046649
Published: May 2021
View article titled, Photoluminescence efficiency of zincblende InGaN/GaN quantum wells
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Includes: Supplementary data
Journal Articles

Alloy segregation at stacking faults in zincblende GaN heterostructures

B. Ding, M. Frentrup, S. M. Fairclough, M. J. Kappers, M. Jain, A. Kovács, D. J. Wallis, R. A. Oliver
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 145703 (2020)
https://doi.org/10.1063/5.0015157
Published: October 2020
View article titled, Alloy segregation at stacking faults in zincblende GaN heterostructures
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Journal Articles

Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells

Editor’s Pick
S. A. Church, B. Ding, P. W. Mitchell, M. J. Kappers, M. Frentrup, G. Kusch, S. M. Fairclough, D. J. Wallis, R. A. Oliver, D. J. Binks
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 032103 (2020)
https://doi.org/10.1063/5.0012131
Published: July 2020
View article titled, Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells
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Includes: Supplementary data
Journal Articles

The relationship between the three-dimensional structure of porous GaN distributed Bragg reflectors and their birefringence

P. H. Griffin, K. M. Patel, T. Zhu, R. M. Langford, V. S. Kamboj, D. A. Ritchie, R. A. Oliver
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 193101 (2020)
https://doi.org/10.1063/5.0005770
Published: May 2020
View article titled, The relationship between the three-dimensional structure of porous GaN distributed Bragg reflectors and their birefringence
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Includes: Supplementary data
Journal Articles

Structural characterization of porous GaN distributed Bragg reflectors using x-ray diffraction

Editor’s Pick
P. H. Griffin, M. Frentrup, T. Zhu, M. E. Vickers, R. A. Oliver
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 213109 (2019)
https://doi.org/10.1063/1.5134143
Published: December 2019
View article titled, Structural characterization of porous GaN distributed Bragg reflectors using x-ray diffraction
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Includes: Supplementary data
Journal Articles

Optical and structural properties of dislocations in InGaN

F. C.-P. Massabuau, M. K. Horton, E. Pearce, S. Hammersley, P. Chen, M. S. Zielinski, T. F. K. Weatherley, G. Divitini, P. R. Edwards, M. J. Kappers, C. McAleese, M. A. Moram, C. J. Humphreys, P. Dawson, R. A. Oliver
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 165701 (2019)
https://doi.org/10.1063/1.5084330
Published: April 2019
View article titled, Optical and structural properties of dislocations in InGaN
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Includes: Supplementary data
Journal Articles

What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

Y. Robin, M. Pristovsek, H. Amano, F. Oehler, R. A. Oliver, C. J. Humphreys
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 183102 (2018)
https://doi.org/10.1063/1.5047240
Published: November 2018
View article titled, What is red? On the chromaticity of orange-red InGaN/GaN based LEDs
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Journal Articles

Improvement of single photon emission from InGaN QDs embedded in porous micropillars

H. P. Springbett, K. Gao (高亢), J. Jarman, T. Zhu, M. Holmes, Y. Arakawa, R. A. Oliver
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 101107 (2018)
https://doi.org/10.1063/1.5045843
Published: September 2018
View article titled, Improvement of single photon emission from InGaN QDs embedded in porous micropillars
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Journal Articles

Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

F. S. Choi, J. T. Griffiths, Chris Ren, K. B. Lee, Z. H. Zaidi, P. A. Houston, I. Guiney, C. J. Humphreys, R. A. Oliver, D. J. Wallis
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 055702 (2018)
https://doi.org/10.1063/1.5027680
Published: August 2018
View article titled, Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
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Journal Articles

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

S. A. Church, S. Hammersley, P. W. Mitchell, M. J. Kappers, L. Y. Lee, F. Massabuau, S. L. Sahonta, M. Frentrup, L. J. Shaw, D. J. Wallis, C. J. Humphreys, R. A. Oliver, D. J. Binks, P. Dawson
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 185705 (2018)
https://doi.org/10.1063/1.5026267
Published: May 2018
View article titled, Effect of stacking faults on the photoluminescence spectrum of zincblende GaN
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Journal Articles

Structure and magnetic properties of an epitaxial Fe(110)/MgO(111)/GaN(0001) heterostructure

N. Khalid, J.-Y. Kim, A. Ionescu, T. Hussain, F. Oehler, T. Zhu, R. A. Oliver, I. Farrer, R. Ahmad, C. H. W. Barnes
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 103901 (2018)
https://doi.org/10.1063/1.5022433
Published: March 2018
View article titled, Structure and magnetic properties of an epitaxial Fe(110)/MgO(111)/GaN(0001) heterostructure
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Journal Articles

The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes

M. A. Hopkins, D. W. E. Allsopp, M. J. Kappers, R. A. Oliver, C. J. Humphreys
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 234505 (2017)
https://doi.org/10.1063/1.4986434
Published: December 2017
View article titled, The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes
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Journal Articles

Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot

C. C. Kocher, T. J. Puchtler, J. C. Jarman, T. Zhu, T. Wang, L. Nuttall, R. A. Oliver, R. A. Taylor
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 251108 (2017)
https://doi.org/10.1063/1.5008720
Published: December 2017
View article titled, Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot
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Journal Articles

Structural impact on the nanoscale optical properties of InGaN core-shell nanorods

J. T. Griffiths, C. X. Ren, P.-M. Coulon, E. D. Le Boulbar, C. G. Bryce, I. Girgel, A. Howkins, I. Boyd, R. W. Martin, D. W. E. Allsopp, P. A. Shields, C. J. Humphreys, R. A. Oliver
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 172105 (2017)
https://doi.org/10.1063/1.4982594
Published: April 2017
View article titled, Structural impact on the nanoscale optical properties of InGaN core-shell nanorods
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