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Journal Articles

Thin-film resistor fabrication for InP technology applications

R. F. Kopf, R. Melendes, D. C. Jacobson, A. Tate, M. A. Melendes, R. R. Reyes, R. A. Hamm, Y. Yang, J. Frackoviak, N. G. Weimann, H. L. Maynard, C. T. Liu
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 20, 871–875 (2002)
https://doi.org/10.1116/1.1473179
Published: June 2002
View article titled, Thin-film resistor fabrication for InP technology applications
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Journal Articles

Alignment with exposed resist in photolithography

J. Burm, A. Tate, R. F. Kopf, R. W. Ryan, R. A. Hamm, L. M. Chirovsky
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 17, 905–907 (1999)
https://doi.org/10.1116/1.590668
Published: May 1999
View article titled, Alignment with exposed resist in photolithography
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Journal Articles

Dielectric-assisted trilayer lift-off process for improved metal definition

R. W. Ryan, R. F. Kopf, R. A. Hamm, R. J. Malik, R. Masaitis, R. Opila
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 16, 2759–2762 (1998)
https://doi.org/10.1116/1.590267
Published: September 1998
View article titled, Dielectric-assisted trilayer lift-off process for improved metal definition
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Journal Articles

Side-by-side wafer bonding of InP for use with stepper-based lithography

R. W. Ryan, R. F. Kopf, A. Tate, J. Burm, R. A. Hamm
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 16, 2110–2112 (1998)
https://doi.org/10.1116/1.590137
Published: July 1998
View article titled, Side-by-side wafer bonding of InP for use with stepper-based lithography
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Journal Articles

Carrier dynamics and photodetection in charge injection transistors

Michael Y. Frankel, Gregory L. Belenky, Serge Luryi, Thomas F. Carruthers, Michael L. Dennis, Alfred Y. Cho, R. A. Hamm, Deborah L. Sivco
Journal: Journal of Applied Physics
J. Appl. Phys. 79, 3312–3317 (1996)
https://doi.org/10.1063/1.361231
Published: March 1996
View article titled, Carrier dynamics and photodetection in charge injection transistors
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Journal Articles

Carbon doping of Ga0.47In0.53As using carbontetrabromide by metalorganic molecular beam epitaxy for InP‐based heterostructure bipolar transistor devices

R. A. Hamm, R. Malik, D. Humphrey, R. Ryan, S. Chandrasekhar, L. Lunardi, M. Geva
Journal: Applied Physics Letters
Appl. Phys. Lett. 67, 2226–2228 (1995)
https://doi.org/10.1063/1.115111
Published: October 1995
View article titled, Carbon doping of Ga<sub>0.47</sub>In<sub>0.53</sub>As using carbontetrabromide by metalorganic molecular beam epitaxy for InP‐based heterostructure bipolar transistor devices
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Journal Articles

On the origin of oval defects in metalorganic molecular beam epitaxy of InP

M. A. Cotta, R. A. Hamm, S. N. G. Chu, L. R. Harriott, H. Temkin
Journal: Applied Physics Letters
Appl. Phys. Lett. 66, 2358–2360 (1995)
https://doi.org/10.1063/1.113982
Published: May 1995
View article titled, On the origin of oval defects in metalorganic molecular beam epitaxy of InP
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Journal Articles

Optical transitions between light hole subbands in InGaAs/InP strained layer multiquantum wells

I. Ilouz, J. Oiknine‐Schlesinger, D. Gershoni, E. Ehrenfreund, D. Ritter, R. A. Hamm, J. M. Vandenberg
Journal: Applied Physics Letters
Appl. Phys. Lett. 66, 2268–2270 (1995)
https://doi.org/10.1063/1.113188
Published: April 1995
View article titled, Optical transitions between light hole subbands in InGaAs/InP strained layer multiquantum wells
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Journal Articles

Measurement of the electron ionization coefficient at low electric fields in InGaAs‐based heterojunction bipolar transistors

C. Canali, C. Forzan, A. Neviani, L. Vendrame, E. Zanoni, R. A. Hamm, R. J. Malik, F. Capasso, S. Chandrasekhar
Journal: Applied Physics Letters
Appl. Phys. Lett. 66, 1095–1097 (1995)
https://doi.org/10.1063/1.113583
Published: February 1995
View article titled, Measurement of the electron ionization coefficient at low electric fields in InGaAs‐based heterojunction bipolar transistors
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Journal Articles

Nonstationary 1/f noise in InP/InGaAs heterojunction bipolar transistors

G. B. Alers, S. Martin, R. A. Hamm, A. Feygenson, R. D. Yadvish
Journal: Applied Physics Letters
Appl. Phys. Lett. 66, 198–200 (1995)
https://doi.org/10.1063/1.113133
Published: January 1995
View article titled, Nonstationary 1/<em>f</em> noise in InP/InGaAs heterojunction bipolar transistors
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Journal Articles

Compact metalorganic molecular‐beam epitaxy growth system

R. A. Hamm, D. Ritter, H. Temkin
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 12, 2790–2794 (1994)
https://doi.org/10.1116/1.578975
Published: September 1994
View article titled, Compact metalorganic molecular‐beam epitaxy growth system
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Journal Articles

InGaAs/InP quantum wells with thickness modulation

M. J. S. P. Brasil, A. A. Bernussi, M. A. Cotta, M. V. Marquezini, J. A. Brum, R. A. Hamm, S. N. G. Chu, L. R. Harriott, H. Temkin
Journal: Applied Physics Letters
Appl. Phys. Lett. 65, 857–859 (1994)
https://doi.org/10.1063/1.112182
Published: August 1994
View article titled, InGaAs/InP quantum wells with thickness modulation
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Journal Articles

Role of hot electron base transport in abrupt emitter InP/Ga0.43In0.53As heterojunction bipolar transistors

Dan Ritter, R. A. Hamm, A. Feygenson, P. R. Smith
Journal: Applied Physics Letters
Appl. Phys. Lett. 64, 2988–2990 (1994)
https://doi.org/10.1063/1.111380
Published: May 1994
View article titled, Role of hot electron base transport in abrupt emitter InP/Ga<sub>0.43</sub>In<sub>0.53</sub>As heterojunction bipolar transistors
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Journal Articles

Lateral thickness modulation of InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy

M. A. Cotta, R. A. Hamm, S. N. G. Chu, L. R. Harriott, H. Temkin
Journal: Journal of Applied Physics
J. Appl. Phys. 75, 630–632 (1994)
https://doi.org/10.1063/1.355800
Published: January 1994
View article titled, Lateral thickness modulation of InGaAs/InP quantum wells grown by metalorganic molecular beam epitaxy
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Journal Articles

Beryllium δ doping studies in InP and Ga0.47In0.53As during metalorganic molecular beam epitaxy

Dan Ritter, R. A. Hamm, M. B. Panish, M. Geva
Journal: Applied Physics Letters
Appl. Phys. Lett. 63, 1543–1545 (1993)
https://doi.org/10.1063/1.110743
Published: September 1993
View article titled, Beryllium δ doping studies in InP and Ga<sub>0.47</sub>In<sub>0.53</sub>As during metalorganic molecular beam epitaxy
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Journal Articles

Minority‐carrier mobility enhancement in p+ InGaAs lattice matched to InP

E. S. Harmon, M. L. Lovejoy, M. R. Melloch, M. S. Lundstrom, D. Ritter, R. A. Hamm
Journal: Applied Physics Letters
Appl. Phys. Lett. 63, 636–638 (1993)
https://doi.org/10.1063/1.109974
Published: August 1993
View article titled, Minority‐carrier mobility enhancement in <em>p</em><sup>+</sup> InGaAs lattice matched to InP
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Journal Articles

Collector‐up light‐emitting charge injection transistors in n‐InGaAs/InAlAs/p‐InGaAs and n‐InGaAs/InP/p‐InGaAs heterostructures

G. L. Belenky, P. A. Garbinski, S. Luryi, M. Mastrapasqua, A. Y. Cho, R. A. Hamm, T. R. Hayes, E. J. Laskowski, D. L. Sivco, P. R. Smith
Journal: Journal of Applied Physics
J. Appl. Phys. 73, 8618–8627 (1993)
https://doi.org/10.1063/1.353393
Published: June 1993
View article titled, Collector‐up light‐emitting charge injection transistors in <em>n</em>‐InGaAs/InAlAs/<em>p</em>‐InGaAs and <em>n</em>‐InGaAs/InP/<em>p</em>‐InGaAs heterostructures
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Journal Articles

Scanning force microscopy measurement of edge growth rate enhancement in selective area epitaxy

M. A. Cotta, R. A. Hamm, T. W. Staley, R. D. Yadvish, L. R. Harriott, H. Temkin
Journal: Applied Physics Letters
Appl. Phys. Lett. 62, 496–498 (1993)
https://doi.org/10.1063/1.108890
Published: February 1993
View article titled, Scanning force microscopy measurement of edge growth rate enhancement in selective area epitaxy
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Journal Articles

Feature size effects on selective area epitaxy of InGaAs

M. A. Cotta, L. R. Harriott, Y. L. Wang, R. A. Hamm, H. H. Wade, J. S. Weiner, D. Ritter, H. Temkin
Journal: Applied Physics Letters
Appl. Phys. Lett. 61, 1936–1938 (1992)
https://doi.org/10.1063/1.108368
Published: October 1992
View article titled, Feature size effects on selective area epitaxy of InGaAs
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Journal Articles

Selective area growth of heterostructure bipolar transistors by metalorganic molecular beam epitaxy

R. A. Hamm, A. Feygenson, D. Ritter, Y. L. Wang, H. Temkin, R. D. Yadvish, M. B. Panish
Journal: Applied Physics Letters
Appl. Phys. Lett. 61, 592–594 (1992)
https://doi.org/10.1063/1.107846
Published: August 1992
View article titled, Selective area growth of heterostructure bipolar transistors by metalorganic molecular beam epitaxy
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