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Journal Articles

MoS₂-based ferroelectric field-effect transistor with atomic layer deposited Hf_0.5Zr_0.5O₂ films toward memory applications

Ming-Yang Cha, Hao Liu, Tian-Yu Wang, Lin Chen, Hao Zhu, Li Ji, Qing-Qing Sun, David Wei Zhang

AIP Advances 10, 065107 (2020)

https://doi.org/10.1063/5.0010829

Published: June 2020

View article titled, MoS2-based ferroelectric field-effect transistor with atomic layer deposited Hf0.5Zr0.5O2 films toward memory applications

Journal Articles

Backside passivation for improving the noise performance in CMOS image sensor

Peng Sun, Sheng Hu, Wen Zou, Peng-Fei Wang, Lin Chen, Hao Zhu, Qing-Qing Sun, David Wei Zhang

AIP Advances 10, 045229 (2020)

https://doi.org/10.1063/5.0006700

Published: April 2020

View article titled, Backside passivation for improving the noise performance in CMOS image sensor

Journal Articles

Band alignment of In₂O₃/β-Ga₂O₃ interface determined by X-ray photoelectron spectroscopy

Shun-Ming Sun, Wen-Jun Liu, Yong-Ping Wang, Ya-Wei Huan, Qian Ma, Bao Zhu, Su-Dong Wu, Wen-Jie Yu, Ray-Hua Horng, Chang-Tai Xia, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang

Appl. Phys. Lett. 113, 031603 (2018)

https://doi.org/10.1063/1.5038615

Published: July 2018

View article titled, Band alignment of In2O3/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy

Journal Articles

Ferroelectric HfZrO_x-based MoS₂ negative capacitance transistor with ITO capping layers for steep-slope device application

Jing Xu, Shu-Ye Jiang, Min Zhang, Hao Zhu, Lin Chen, Qing-Qing Sun, David Wei Zhang

Appl. Phys. Lett. 112, 103104 (2018)

https://doi.org/10.1063/1.5019418

Published: March 2018

View article titled, Ferroelectric HfZrOx-based MoS2 negative capacitance transistor with ITO capping layers for steep-slope device application

Includes: Supplementary data

Journal Articles

Light-erasable embedded charge-trapping memory based on MoS₂ for system-on-panel applications

Long-Fei He, Hao Zhu, Jing Xu, Hao Liu, Xin-Ran Nie, Lin Chen, Qing-Qing Sun, Yang Xia, David Wei Zhang

Appl. Phys. Lett. 111, 223104 (2017)

https://doi.org/10.1063/1.5000552

Published: November 2017

View article titled, Light-erasable embedded charge-trapping memory based on MoS2 for system-on-panel applications

Includes: Supplementary data

Journal Articles

Improved integration of ultra-thin high-k dielectrics in few-layer MoS₂ FET by remote forming gas plasma pretreatment

Xiao Wang, Tian-Bao Zhang, Wen Yang, Hao Zhu, Lin Chen, Qing-Qing Sun, David Wei Zhang

Appl. Phys. Lett. 110, 053110 (2017)

https://doi.org/10.1063/1.4975627

Published: February 2017

View article titled, Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

Includes: Supplementary data

Journal Articles

Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition

Shang-Bin Zhu, Hong-Liang Lu, Qiu-Xiang Zhang, Yuan Zhang, Qing-Qing Sun, Peng Zhou, Shi-Jin Ding, David Wei Zhang

J. Vac. Sci. Technol. A 33, 01A138 (2015)

https://doi.org/10.1116/1.4903935

Published: December 2014

View article titled, Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition

Journal Articles

Hybrid density functional theory study of Cu(In_1−xGa_x)Se₂ band structure for solar cell application

Xu-Dong Chen, Lin Chen, Qing-Qing Sun, Peng Zhou, David Wei Zhang

AIP Advances 4, 087118 (2014)

https://doi.org/10.1063/1.4893238

Published: August 2014

View article titled, Hybrid density functional theory study of Cu(In1−xGax)Se2 band structure for solar cell application

Journal Articles

Band alignment and interfacial structure of ZnO/Si heterojunction with Al₂O₃ and HfO₂ as interlayers

Hong-Liang Lu, Ming Yang, Zhang-Yi Xie, Yang Geng, Yuan Zhang, Peng-Fei Wang, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang

Appl. Phys. Lett. 104, 161602 (2014)

https://doi.org/10.1063/1.4872175

Published: April 2014

View article titled, Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers

Journal Articles

Monochromatic light-assisted erasing effects of In-Ga-Zn-O thin film transistor memory with Al₂O₃/Zn-doped Al₂O₃/Al₂O₃ stacks

Sun Chen, Wen-Peng Zhang, Xing-Mei Cui, Shi-Jin Ding, Qing-Qing Sun, Wei Zhang

Appl. Phys. Lett. 104, 103504 (2014)

https://doi.org/10.1063/1.4868387

Published: March 2014

View article titled, Monochromatic light-assisted erasing effects of In-Ga-Zn-O thin film transistor memory with Al2O3/Zn-doped Al2O3/Al2O3 stacks

Journal Articles

Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited high-k dielectrics

Shan Zheng, Wen Yang, Qing-Qing Sun, Lin Chen, Peng Zhou, Peng-Fei Wang, David Wei Zhang, Fei Xiao

Appl. Phys. Lett. 103, 261602 (2013)

https://doi.org/10.1063/1.4857135

Published: December 2013

View article titled, Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited high-k dielectrics

Journal Articles

Atomic scale investigations of the gate controlled tunneling effect in graphyne nanoribbon

Wen Yang, Lu-Hao Wang, Yang Geng, Qing-Qing Sun, Peng Zhou, Shi-Jing Ding, David Wei Zhang

J. Appl. Phys. 114, 224311 (2013)

https://doi.org/10.1063/1.4836876

Published: December 2013

View article titled, Atomic scale investigations of the gate controlled tunneling effect in graphyne nanoribbon

Journal Articles

Distortion of electronic structure in HfO₂ induced by the out-diffused As from GaAs substrate

Jing-Lan He, Qing-Qing Sun, Hong-Liang Lu, Peng-Fei Wang, Shi-Jin Ding, David Wei Zhang

J. Appl. Phys. 113, 186101 (2013)

https://doi.org/10.1063/1.4804059

Published: May 2013

View article titled, Distortion of electronic structure in HfO2 induced by the out-diffused As from GaAs substrate

Journal Articles

The physics and backward diode behavior of heavily doped single layer MoS₂ based p-n junctions

Qing-Qing Sun, Yong-Jun Li, Jin-Lan He, Wen Yang, Peng Zhou, Hong-Liang Lu, Shi-Jing Ding, David Wei Zhang

Appl. Phys. Lett. 102, 093104 (2013)

https://doi.org/10.1063/1.4794802

Published: March 2013

View article titled, The physics and backward diode behavior of heavily doped single layer MoS2 based p-n junctions

Journal Articles

Energy band alignment of InGaZnO₄/Si heterojunction determined by x-ray photoelectron spectroscopy

Zhang-Yi Xie, Hong-Liang Lu, Sai-Sheng Xu, Yang Geng, Qing-Qing Sun, Shi-Jin Ding, David Wei Zhang

Appl. Phys. Lett. 101, 252111 (2012)

https://doi.org/10.1063/1.4773299

Published: December 2012

View article titled, Energy band alignment of InGaZnO4/Si heterojunction determined by x-ray photoelectron spectroscopy

Journal Articles

Hexagonal boron nitride intercalated multi-layer graphene: a possible ultimate solution to ultra-scaled interconnect technology

Yong-Jun Li, Qing-Qing Sun, Lin Chen, Peng Zhou, Peng-Fei Wang, Shi-Jin Ding, David Wei Zhang

AIP Advances 2, 012191 (2012)

https://doi.org/10.1063/1.3701267

Published: March 2012

View article titled, Hexagonal boron nitride intercalated multi-layer graphene: a possible ultimate solution to ultra-scaled interconnect technology

Journal Articles

The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

Lu-Hao Wang, Wen Yang, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding, David Wei Zhang

Appl. Phys. Lett. 100, 063509 (2012)

https://doi.org/10.1063/1.3681366

Published: February 2012

View article titled, The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

Journal Articles

Atomic scale investigation of the abnormal transport properties in bilayer graphene nanoribbon

Yong-Jun Li, Ming-Da Li, Jian-Shuang Liu, Qing-Qing Sun, Peng Zhou, Peng-Fei Wang, Shi-Jin Ding, David Wei Zhang

Appl. Phys. Lett. 100, 013110 (2012)

https://doi.org/10.1063/1.3673324

Published: January 2012

View article titled, Atomic scale investigation of the abnormal transport properties in bilayer graphene nanoribbon

Journal Articles

Resistive switching properties of plasma enhanced-ALD La₂O₃ for novel nonvolatile memory application

Lin Chen, Wen Yang, Ye Li, Qing-Qing Sun, Peng Zhou, Hong-Liang Lu, Shi-Jin Ding, David Wei Zhang

J. Vac. Sci. Technol. A 30, 01A148 (2012)

https://doi.org/10.1116/1.3669516

Published: December 2011

View article titled, Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application

Journal Articles

Formation of Pd nanocrystals in titanium-oxide film by rapid thermal annealing of reactively cosputtered TiPdO films

Wan-Yi Huang, Shi-Jin Ding, Hong-Bing Chen, Qing-Qing Sun, David Wei Zhang

J. Vac. Sci. Technol. A 29, 021006 (2011)

https://doi.org/10.1116/1.3549112

Published: January 2011

View article titled, Formation of Pd nanocrystals in titanium-oxide film by rapid thermal annealing of reactively cosputtered TiPdO films

NARROW

Topics

MoS₂-based ferroelectric field-effect transistor with atomic layer deposited Hf_0.5Zr_0.5O₂ films toward memory applications

Backside passivation for improving the noise performance in CMOS image sensor

Band alignment of In₂O₃/β-Ga₂O₃ interface determined by X-ray photoelectron spectroscopy

Ferroelectric HfZrO_x-based MoS₂ negative capacitance transistor with ITO capping layers for steep-slope device application

Light-erasable embedded charge-trapping memory based on MoS₂ for system-on-panel applications

Improved integration of ultra-thin high-k dielectrics in few-layer MoS₂ FET by remote forming gas plasma pretreatment

Enhancement of photoluminescence properties in ZnO/AlN bilayer heterostructures grown by atomic layer deposition

Hybrid density functional theory study of Cu(In_1−xGa_x)Se₂ band structure for solar cell application

Band alignment and interfacial structure of ZnO/Si heterojunction with Al₂O₃ and HfO₂ as interlayers

Monochromatic light-assisted erasing effects of In-Ga-Zn-O thin film transistor memory with Al₂O₃/Zn-doped Al₂O₃/Al₂O₃ stacks

Schottky barrier height reduction for metal/n-InP by inserting ultra-thin atomic layer deposited high-k dielectrics

Atomic scale investigations of the gate controlled tunneling effect in graphyne nanoribbon

Distortion of electronic structure in HfO₂ induced by the out-diffused As from GaAs substrate

The physics and backward diode behavior of heavily doped single layer MoS₂ based p-n junctions

Energy band alignment of InGaZnO₄/Si heterojunction determined by x-ray photoelectron spectroscopy

Hexagonal boron nitride intercalated multi-layer graphene: a possible ultimate solution to ultra-scaled interconnect technology

The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

Atomic scale investigation of the abnormal transport properties in bilayer graphene nanoribbon

Resistive switching properties of plasma enhanced-ALD La₂O₃ for novel nonvolatile memory application

Formation of Pd nanocrystals in titanium-oxide film by rapid thermal annealing of reactively cosputtered TiPdO films

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