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Journal Articles

Micro-kelvin temperature-stable system for biocalorimetry applications

Kanishka Panda, Rohith Mittapally, Pramod Reddy, Swathi Yadlapalli, Edgar Meyhofer
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 95, 034902 (2024)
https://doi.org/10.1063/5.0188285
Published: March 2024
View article titled, Micro-kelvin temperature-stable system for biocalorimetry applications
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Journal Articles

Anderson transition in compositionally graded p-AlGaN

Shashwat Rathkanthiwar, Pramod Reddy, Cristyan E. Quiñones, James Loveless, Masahiro Kamiyama, Pegah Bagheri, Dolar Khachariya, Tim Eldred, Baxter Moody, Seiji Mita, Ronny Kirste, Ramón Collazo, Zlatko Sitar
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 195705 (2023)
https://doi.org/10.1063/5.0176419
Published: November 2023
View article titled, Anderson transition in compositionally graded p-AlGaN
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Journal Articles

High p-conductivity in AlGaN enabled by polarization field engineering

Editor’s Pick
Shashwat Rathkanthiwar, Pramod Reddy, Baxter Moody, Cristyan Quiñones-García, Pegah Bagheri, Dolar Khachariya, Rafael Dalmau, Seiji Mita, Ronny Kirste, Ramón Collazo, Zlatko Sitar
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 152105 (2023)
https://doi.org/10.1063/5.0143427
Published: April 2023
View article titled, High p-conductivity in AlGaN enabled by polarization field engineering
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Journal Articles

High conductivity in Ge-doped AlN achieved by a non-equilibrium process

Pegah Bagheri, Cristyan Quiñones-Garcia, Dolar Khachariya, James Loveless, Yan Guan, Shashwat Rathkanthiwar, Pramod Reddy, Ronny Kirste, Seiji Mita, James Tweedie, Ramón Collazo, Zlatko Sitar
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 142108 (2023)
https://doi.org/10.1063/5.0146439
Published: April 2023
View article titled, High conductivity in Ge-doped AlN achieved by a non-equilibrium process
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Journal Articles

High conductivity and low activation energy in p-type AlGaN

Shashwat Rathkanthiwar, Pegah Bagheri, Dolar Khachariya, Seiji Mita, Cristyan Quiñones-García, Yan Guan, Baxter Moody, Pramod Reddy, Ronny Kirste, Ramón Collazo, Zlatko Sitar
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 092103 (2023)
https://doi.org/10.1063/5.0141863
Published: February 2023
View article titled, High conductivity and low activation energy in p-type AlGaN
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Journal Articles

High electron mobility in AlN:Si by point and extended defect management

Pegah Bagheri, Cristyan Quiñones-Garcia, Dolar Khachariya, Shashwat Rathkanthiwar, Pramod Reddy, Ronny Kirste, Seiji Mita, James Tweedie, Ramón Collazo, Zlatko Sitar
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 185703 (2022)
https://doi.org/10.1063/5.0124589
Published: November 2022
View article titled, High electron mobility in AlN:Si by point and extended defect management
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Journal Articles

On the conduction mechanism in compositionally graded AlGaN

Editor’s Pick
Shashwat Rathkanthiwar, Pegah Bagheri, Dolar Khachariya, Ji Hyun Kim, Yasutomo Kajikawa, Pramod Reddy, Seiji Mita, Ronny Kirste, Baxter Moody, Ramon Collazo, Zlatko Sitar
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 072106 (2022)
https://doi.org/10.1063/5.0100756
Published: August 2022
View article titled, On the conduction mechanism in compositionally graded AlGaN
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Journal Articles

Effects of temperature and oxygen partial pressure on electrical conductivity of Fe-doped β-Ga2O3 single crystals

Gyunghyun Ryu, Pramod Reddy, Ramón Collazo, Elizabeth C. Dickey
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 182101 (2022)
https://doi.org/10.1063/5.0093588
Published: May 2022
View article titled, Effects of temperature and oxygen partial pressure on electrical conductivity of Fe-doped <em>β</em>-Ga<sub>2</sub>O<sub>3</sub> single crystals
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Journal Articles

Schottky contacts to N-polar GaN with SiN interlayer for elevated temperature operation

Dolar Khachariya, Dennis Szymanski, Pramod Reddy, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 172109 (2022)
https://doi.org/10.1063/5.0083588
Published: April 2022
View article titled, Schottky contacts to N-polar GaN with SiN interlayer for elevated temperature operation
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Journal Articles

Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Dolar Khachariya, Seiji Mita, Pramod Reddy, Saroj Dangi, J. Houston Dycus, Pegah Bagheri, M. Hayden Breckenridge, Rohan Sengupta, Shashwat Rathkanthiwar, Ronny Kirste, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 172106 (2022)
https://doi.org/10.1063/5.0083966
Published: April 2022
View article titled, Record &gt;10 MV/cm mesa breakdown fields in Al<sub>0.85</sub>Ga<sub>0.15</sub>N/Al<sub>0.6</sub>Ga<sub>0.4</sub>N high electron mobility transistors on native AlN substrates
Open the PDF for Record >10 MV/cm mesa breakdown fields in Al<sub>0.85</sub>Ga<sub>0.15</sub>N/Al<sub>0.6</sub>Ga<sub>0.4</sub>N high electron mobility transistors on native AlN substrates in another window
Journal Articles

Doping and compensation in heavily Mg doped Al-rich AlGaN films

Editor’s Pick
Pegah Bagheri, Andrew Klump, Shun Washiyama, M. Hayden Breckenridge, Ji Hyun Kim, Yan Guan, Dolar Khachariya, Cristyan Quiñones-García, Biplab Sarkar, Shashwat Rathkanthiwar, Pramod Reddy, Seiji Mita, Ronny Kirste, Ramón Collazo, Zlatko Sitar
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 082102 (2022)
https://doi.org/10.1063/5.0082992
Published: February 2022
View article titled, Doping and compensation in heavily Mg doped Al-rich AlGaN films
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Journal Articles

The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN

Ke Wang, Ronny Kirste, Seiji Mita, Shun Washiyama, Will Mecouch, Pramod Reddy, Ramón Collazo, Zlatko Sitar
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 032104 (2022)
https://doi.org/10.1063/5.0077628
Published: January 2022
View article titled, The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN
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Journal Articles

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions

Dennis Szymanski, Dolar Khachariya, Tim B. Eldred, Pegah Bagheri, Shun Washiyama, Alexander Chang, Spyridon Pavlidis, Ronny Kirste, Pramod Reddy, Erhard Kohn, Lincoln Lauhon, Ramon Collazo, Zlatko Sitar
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 015703 (2022)
https://doi.org/10.1063/5.0076044
Published: January 2022
View article titled, GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions
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Journal Articles

A pathway to highly conducting Ge-doped AlGaN

Pegah Bagheri, Ji Hyun Kim, Shun Washiyama, Pramod Reddy, Andrew Klump, Ronny Kirste, Seiji Mita, Ramón Collazo, Zlatko Sitar
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 205703 (2021)
https://doi.org/10.1063/5.0071791
Published: November 2021
View article titled, A pathway to highly conducting Ge-doped AlGaN
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Journal Articles

Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN

Pramod Reddy, Dolar Khachariya, Will Mecouch, M. Hayden Breckenridge, Pegah Bagheri, Yan Guan, Ji Hyun Kim, Spyridon Pavlidis, Ronny Kirste, Seiji Mita, Erhard Kohn, Ramon Collazo, Zlatko Sitar
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 182104 (2021)
https://doi.org/10.1063/5.0062831
Published: November 2021
View article titled, Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN
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Journal Articles

On the Ge shallow-to-deep level transition in Al-rich AlGaN

Pegah Bagheri, Pramod Reddy, Seiji Mita, Dennis Szymanski, Ji Hyun Kim, Yan Guan, Dolar Khachariya, Andrew Klump, Spyridon Pavlidis, Ronny Kirste, Ramón Collazo, Zlatko Sitar
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 055702 (2021)
https://doi.org/10.1063/5.0059037
Published: August 2021
View article titled, On the Ge shallow-to-deep level transition in Al-rich AlGaN
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Journal Articles

Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies

Ji Hyun Kim, Pegah Bagheri, Shun Washiyama, Andrew Klump, Ronny Kirste, Seiji Mita, Pramod Reddy, Ramón Collazo, Zlatko Sitar
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 022101 (2021)
https://doi.org/10.1063/5.0055409
Published: July 2021
View article titled, Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies
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Journal Articles

Native oxide reconstructions on AlN and GaN (0001) surfaces

Editor’s Pick
Kelsey J. Mirrielees, J. Houston Dycus, Jonathon N. Baker, Pramod Reddy, Ramón Collazo, Zlatko Sitar, James M. LeBeau, Douglas L. Irving
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 195304 (2021)
https://doi.org/10.1063/5.0048820
Published: May 2021
View article titled, Native oxide reconstructions on AlN and GaN (0001) surfaces
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Journal Articles

Quantifying the temperature of heated microdevices using scanning thermal probes

Amin Reihani, Shen Yan, Yuxuan Luan, Rohith Mittapally, Edgar Meyhofer, Pramod Reddy
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 163102 (2021)
https://doi.org/10.1063/5.0046789
Published: April 2021
View article titled, Quantifying the temperature of heated microdevices using scanning thermal probes
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Includes: Supplementary data
Journal Articles

On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers

Dolar Khachariya, Dennis Szymanski, M. Hayden Breckenridge, Pramod Reddy, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 122103 (2021)
https://doi.org/10.1063/5.0039888
Published: March 2021
View article titled, On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers
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