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Journal Articles

Selective atomic layer deposition on flexible polymeric substrates employing a polyimide adhesive as a physical mask

Matin Forouzmehr, Serges Zambou, Kimmo Lahtonen, Mari Honkanen, Rafi Md Nazmul Anam, Aleksi Ruhanen, Chakra Rokaya, Donald Lupo, Paul R. Berger

J. Vac. Sci. Technol. A 39, 012405 (2021)

https://doi.org/10.1116/6.0000566

Published: December 2020

View article titled, Selective atomic layer deposition on flexible polymeric substrates employing a polyimide adhesive as a physical mask

Journal Articles

Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire

David F. Storm, Tyler A. Growden, Evan M. Cornuelle, Prudhvi R. Peri, Thomas Osadchy, Jeffrey W. Daulton, Wei-Dong Zhang, D. Scott Katzer, Matthew T. Hardy, Neeraj Nepal, Richard Molnar, Elliott R. Brown, Paul R. Berger, David J. Smith, David J. Meyer

J. Vac. Sci. Technol. B 38, 032214 (2020)

https://doi.org/10.1116/6.0000052

Published: May 2020

View article titled, Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire

Journal Articles

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm²

Evan M. Cornuelle, Tyler A. Growden, David F. Storm, Elliott R. Brown, Weidong Zhang, Brian P. Downey, Vikrant Gokhale, Laura B. Ruppalt, James G. Champlain, Prudhvi Peri, Martha R. McCartney, David J. Smith, David J. Meyer, Paul R. Berger

AIP Advances 10, 055307 (2020)

https://doi.org/10.1063/5.0005062

Published: May 2020

View article titled, Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

Journal Articles

Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes

Tyler A. Growden, David F. Storm, Evan M. Cornuelle, Elliott R. Brown, Weidong Zhang, Brian P. Downey, Jason A Roussos, Nicholas Cronk, Laura B. Ruppalt, James G. Champlain, Paul R. Berger, David J. Meyer

Appl. Phys. Lett. 116, 113501 (2020)

https://doi.org/10.1063/1.5139219

Published: March 2020

View article titled, Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes

Journal Articles

930 kA/cm² peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template

Tyler A. Growden, Evan M. Cornuelle, David F. Storm, Weidong Zhang, Elliott R. Brown, Logan M. Whitaker, Jeffrey W. Daulton, Richard Molnar, David J. Meyer, Paul R. Berger

Appl. Phys. Lett. 114, 203503 (2019)

https://doi.org/10.1063/1.5095056

Published: May 2019

View article titled, 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template

Journal Articles

431 kA/cm² peak tunneling current density in GaN/AlN resonant tunneling diodes

Tyler A. Growden, Weidong Zhang, Elliott R. Brown, David F. Storm, Katurah Hansen, Parastou Fakhimi, David J. Meyer, Paul R. Berger

Appl. Phys. Lett. 112, 033508 (2018)

https://doi.org/10.1063/1.5010794

Published: January 2018

View article titled, 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

Journal Articles

AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

David F. Storm, Tyler A. Growden, Weidong Zhang, Elliott R. Brown, Neeraj Nepal, D. Scott Katzer, Matthew T. Hardy, Paul R. Berger, David J. Meyer

J. Vac. Sci. Technol. B 35, 02B110 (2017)

https://doi.org/10.1116/1.4977779

Published: March 2017

View article titled, AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

Journal Articles

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

Tyler A. Growden, David F. Storm, Weidong Zhang, Elliott R. Brown, David J. Meyer, Parastou Fakhimi, Paul R. Berger

Appl. Phys. Lett. 109, 083504 (2016)

https://doi.org/10.1063/1.4961442

Published: August 2016

View article titled, Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

Journal Articles

Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

Tyler A. Growden, E. R. Brown, Weidong Zhang, Ravi Droopad, Paul R. Berger

Appl. Phys. Lett. 107, 153506 (2015)

https://doi.org/10.1063/1.4933258

Published: October 2015

View article titled, Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

Journal Articles

High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition

Anisha Ramesh, Paul R. Berger, Roger Loo

Appl. Phys. Lett. 100, 092104 (2012)

https://doi.org/10.1063/1.3684834

Published: February 2012

View article titled, High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition

Journal Articles

Fabrication of nanowires with high aspect ratios utilized by dry etching with SF 6 : C 4 F 8 and self-limiting thermal oxidation on Si substrate

Si-Young Park, Sandro J. Di Giacomo, R. Anisha, Paul R. Berger, Phillip E. Thompson, Ilesanmi Adesida

J. Vac. Sci. Technol. B 28, 763–768 (2010)

https://doi.org/10.1116/1.3455498

Published: July 2010

View article titled, Fabrication of nanowires with high aspect ratios utilized by dry etching with SF 6 : C 4 F 8 and self-limiting thermal oxidation on Si substrate

Journal Articles

Observation of strain in pseudomorphic Si 1 − x Ge x by tracking phonon participation in Si ∕ Si Ge resonant interband tunnel diodes via electron tunneling spectroscopy

Ronghua Yu, R. Anisha, Niu Jin, Sung-Yong Chung, Paul R. Berger, Thomas J. Gramila, Phillip E. Thompson

J. Appl. Phys. 106, 034501 (2009)

https://doi.org/10.1063/1.3187832

Published: August 2009

View article titled, Observation of strain in pseudomorphic Si 1 − x Ge x by tracking phonon participation in Si ∕ Si Ge resonant interband tunnel diodes via electron tunneling spectroscopy

Journal Articles

Strain engineered Si ∕ Si Ge resonant interband tunneling diodes with outside barriers grown on Si 0.8 Ge 0.2 virtual substrates

R. Anisha, Niu Jin, Sung-Yong Chung, Ronghua Yu, Paul R. Berger, Phillip E. Thompson

Appl. Phys. Lett. 93, 102113 (2008)

https://doi.org/10.1063/1.2981211

Published: September 2008

View article titled, Strain engineered Si ∕ Si Ge resonant interband tunneling diodes with outside barriers grown on Si 0.8 Ge 0.2 virtual substrates

Journal Articles

4.8% efficient poly(3-hexylthiophene)-fullerene derivative (1:0.8) bulk heterojunction photovoltaic devices with plasma treated Ag O x /indium tin oxide anode modification

Woo-Jun Yoon, Paul R. Berger

Appl. Phys. Lett. 92, 013306 (2008)

https://doi.org/10.1063/1.2830619

Published: January 2008

View article titled, 4.8% efficient poly(3-hexylthiophene)-fullerene derivative (1:0.8) bulk heterojunction photovoltaic devices with plasma treated Ag O x /indium tin oxide anode modification

Journal Articles

Pulsed plasma polymerized dichlorotetramethyldisiloxane high- k gate dielectrics for polymer field-effect transistors

Yifan Xu, Paul R. Berger, Jai Cho, Richard B. Timmons

J. Appl. Phys. 99, 014104 (2006)

https://doi.org/10.1063/1.2150248

Published: January 2006

View article titled, Pulsed plasma polymerized dichlorotetramethyldisiloxane high- k gate dielectrics for polymer field-effect transistors

Journal Articles

Room-temperature negative differential resistance in polymer tunnel diodes using a thin oxide layer and demonstration of threshold logic

Woo-Jun Yoon, Sung-Yong Chung, Paul R. Berger, Sita M. Asar

Appl. Phys. Lett. 87, 203506 (2005)

https://doi.org/10.1063/1.2130395

Published: November 2005

View article titled, Room-temperature negative differential resistance in polymer tunnel diodes using a thin oxide layer and demonstration of threshold logic

Journal Articles

Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection

Yifan Xu, Paul R. Berger, James N. Wilson, Uwe H. F. Bunz

Appl. Phys. Lett. 85, 4219–4221 (2004)

https://doi.org/10.1063/1.1812834

Published: November 2004

View article titled, Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection

Journal Articles

Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy

Sung-Yong Chung, Niu Jin, Ryan E. Pavlovicz, Paul R. Berger, Ronghua Yu, Zhaoqiang Fang, Phillip E. Thompson

J. Appl. Phys. 96, 747–753 (2004)

https://doi.org/10.1063/1.1755436

Published: July 2004

View article titled, Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy

Journal Articles

Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration

Sung-Yong Chung, Niu Jin, Paul R. Berger, Ronghua Yu, Phillip E. Thompson, Roger Lake, Sean L. Rommel, Santosh K. Kurinec

Appl. Phys. Lett. 84, 2688–2690 (2004)

https://doi.org/10.1063/1.1690109

Published: April 2004

View article titled, Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration

Journal Articles

High electric-field effects on short-channel polythiophene polymer field-effect transistors

Yifan Xu, Paul R. Berger

J. Appl. Phys. 95, 1497–1501 (2004)

https://doi.org/10.1063/1.1636830

Published: February 2004

View article titled, High electric-field effects on short-channel polythiophene polymer field-effect transistors

NARROW

Topics

Selective atomic layer deposition on flexible polymeric substrates employing a polyimide adhesive as a physical mask

Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm²

Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes

930 kA/cm² peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template

431 kA/cm² peak tunneling current density in GaN/AlN resonant tunneling diodes

AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition

Fabrication of nanowires with high aspect ratios utilized by dry etching with SF 6 : C 4 F 8 and self-limiting thermal oxidation on Si substrate

Observation of strain in pseudomorphic Si 1 − x Ge x by tracking phonon participation in Si ∕ Si Ge resonant interband tunnel diodes via electron tunneling spectroscopy

Strain engineered Si ∕ Si Ge resonant interband tunneling diodes with outside barriers grown on Si 0.8 Ge 0.2 virtual substrates

4.8% efficient poly(3-hexylthiophene)-fullerene derivative (1:0.8) bulk heterojunction photovoltaic devices with plasma treated Ag O x /indium tin oxide anode modification

Pulsed plasma polymerized dichlorotetramethyldisiloxane high- k gate dielectrics for polymer field-effect transistors

Room-temperature negative differential resistance in polymer tunnel diodes using a thin oxide layer and demonstration of threshold logic

Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection

Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy

Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration

High electric-field effects on short-channel polythiophene polymer field-effect transistors

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