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Journal Articles

Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)

J. Zach Lentz, J. C. Woicik, Matthew Bergschneider, Ryan Davis, Apurva Mehta, Kyeongjae Cho, Paul C. McIntyre

Appl. Phys. Lett. 122, 062103 (2023)

https://doi.org/10.1063/5.0136746

Published: February 2023

View article titled, Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)

Includes: Supplementary data

Journal Articles

Plasmons and inter-band transitions of hexagonal close packed gold nanoparticles

Siying Peng, Andrew C. Meng, Michael R. Braun, Ann F. Marshall, Paul C. McIntyre

Appl. Phys. Lett. 115, 051107 (2019)

https://doi.org/10.1063/1.5100991

Published: July 2019

View article titled, Plasmons and inter-band transitions of hexagonal close packed gold nanoparticles

Includes: Supplementary data

Journal Articles

Bias temperature stress induced hydrogen depassivation from Al₂O₃/InGaAs interface defects

Kechao Tang, Ravi Droopad, Paul C. McIntyre

J. Appl. Phys. 123, 025708 (2018)

https://doi.org/10.1063/1.4994393

Published: January 2018

View article titled, Bias temperature stress induced hydrogen depassivation from Al2O3/InGaAs interface defects

Journal Articles

Low temperature thermal ALD of a SiN_x interfacial diffusion barrier and interface passivation layer on Si_xGe_{1− x}(001) and Si_xGe_{1− x}(110)

Mary Edmonds, Kasra Sardashti, Steven Wolf, Evgueni Chagarov, Max Clemons, Tyler Kent, Jun Hong Park, Kechao Tang, Paul C. McIntyre, Naomi Yoshida, Lin Dong, Russell Holmes, Daniel Alvarez, Andrew C. Kummel

J. Chem. Phys. 146, 052820 (2017)

https://doi.org/10.1063/1.4975081

Published: February 2017

View article titled, Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1− x(001) and SixGe1− x(110)

Includes: Supplementary data

Journal Articles

Characterization of the photocurrents generated by the laser of atomic force microscopes

Yanfeng Ji, Fei Hui, Yuanyuan Shi, Vanessa Iglesias, David Lewis, Jiebin Niu, Shibing Long, Ming Liu, Alexander Hofer, Werner Frammelsberger, Guenther Benstetter, Andrew Scheuermann, Paul C. McIntyre, Mario Lanza

Rev. Sci. Instrum. 87, 083703 (2016)

https://doi.org/10.1063/1.4960597

Published: August 2016

View article titled, Characterization of the photocurrents generated by the laser of atomic force microscopes

Includes: Supplementary data

Journal Articles

Border trap reduction in Al₂O₃/InGaAs gate stacks

Kechao Tang, Roy Winter, Liangliang Zhang, Ravi Droopad, Moshe Eizenberg, Paul C. McIntyre

Appl. Phys. Lett. 107, 202102 (2015)

https://doi.org/10.1063/1.4936100

Published: November 2015

View article titled, Border trap reduction in Al2O3/InGaAs gate stacks

Includes: Supplementary data

Journal Articles

Control of InGaAs and InAs facets using metal modulation epitaxy

Mark A. Wistey, Ashish K. Baraskar, Uttam Singisetti, Greg J. Burek, Byungha Shin, Eunji Kim, Paul C. McIntyre, Arthur C. Gossard, Mark J. W. Rodwell

J. Vac. Sci. Technol. B 33, 011208 (2015)

https://doi.org/10.1116/1.4905497

Published: January 2015

View article titled, Control of InGaAs and InAs facets using metal modulation epitaxy

Journal Articles

Effects of oxide thickness and temperature on dispersions in InGaAs MOS C-V characteristics

Han-Ping Chen, Jaesoo Ahn, Paul C. McIntyre, Yuan Taur

J. Vac. Sci. Technol. B 32, 03D111 (2014)

https://doi.org/10.1116/1.4864618

Published: February 2014

View article titled, Effects of oxide thickness and temperature on dispersions in InGaAs MOS C-V characteristics

Journal Articles

Subcutaneous oxidation of In_0.53Ga_0.47As(100) through ultra-thin atomic layer deposited Al₂O₃

Jaesoo Ahn, Paul C. McIntyre

Appl. Phys. Lett. 103, 251602 (2013)

https://doi.org/10.1063/1.4850520

Published: December 2013

View article titled, Subcutaneous oxidation of In0.53Ga0.47As(100) through ultra-thin atomic layer deposited Al2O3

Journal Articles

Kinetics of germanium nanowire growth by the vapor-solid-solid mechanism with a Ni-based catalyst

Shruti V. Thombare, Ann F. Marshall, Paul C. McIntyre

APL Mater. 1, 061101 (2013)

https://doi.org/10.1063/1.4833935

Published: December 2013

View article titled, Kinetics of germanium nanowire growth by the vapor-solid-solid mechanism with a Ni-based catalyst

Includes: Supplementary data

Journal Articles

Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al₂O₃/InGaAs(100) interfaces

Jaesoo Ahn, Tyler Kent, Evgueni Chagarov, Kechao Tang, Andrew C. Kummel, Paul C. McIntyre

Appl. Phys. Lett. 103, 071602 (2013)

https://doi.org/10.1063/1.4818330

Published: August 2013

View article titled, Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces

Journal Articles

Effects of surface oxide formation on germanium nanowire band-edge photoluminescence

Fatemeh Sadat Minaye Hashemi, Shruti Thombare, Anna Fontcuberta i Morral, Mark L. Brongersma, Paul C. McIntyre

Appl. Phys. Lett. 102, 251122 (2013)

https://doi.org/10.1063/1.4812334

Published: June 2013

View article titled, Effects of surface oxide formation on germanium nanowire band-edge photoluminescence

Journal Articles

New method for determining flat-band voltage in high mobility semiconductors

Roy Winter, Jaesoo Ahn, Paul C. McIntyre, Moshe Eizenberg

J. Vac. Sci. Technol. B 31, 030604 (2013)

https://doi.org/10.1116/1.4802478

Published: April 2013

View article titled, New method for determining flat-band voltage in high mobility semiconductors

Journal Articles

Temperature-dependent capacitance-voltage analysis of defects in Al₂O₃ gate dielectric stacks on GaN

Rathnait D. Long, Aryan Hazeghi, Marika Gunji, Yoshio Nishi, Paul C. McIntyre

Appl. Phys. Lett. 101, 241606 (2012)

https://doi.org/10.1063/1.4769827

Published: December 2012

View article titled, Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN

Journal Articles

Nucleation and growth kinetics during metal-induced layer exchange crystallization of Ge thin films at low temperatures

Shu Hu, Paul C. McIntyre

J. Appl. Phys. 111, 044908 (2012)

https://doi.org/10.1063/1.3682110

Published: February 2012

View article titled, Nucleation and growth kinetics during metal-induced layer exchange crystallization of Ge thin films at low temperatures

Includes: Supplementary data

Journal Articles

Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

Jaesoo Ahn, Irina Geppert, Marika Gunji, Martin Holland, Iain Thayne, Moshe Eizenberg, Paul C. McIntyre

Appl. Phys. Lett. 99, 232902 (2011)

https://doi.org/10.1063/1.3662966

Published: December 2011

View article titled, Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

Journal Articles

Ultrathin ALD-Al₂O₃ layers for Ge(001) gate stacks: Local composition evolution and dielectric properties

Shankar Swaminathan, Yun Sun, Piero Pianetta, Paul C. McIntyre

J. Appl. Phys. 110, 094105 (2011)

https://doi.org/10.1063/1.3647761

Published: November 2011

View article titled, Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties

Journal Articles

Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

Eun Ji Kim, Michael Shandalov, Krishna C. Saraswat, Paul C. McIntyre

Appl. Phys. Lett. 98, 032108 (2011)

https://doi.org/10.1063/1.3527977

Published: January 2011

View article titled, Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

Journal Articles

Strain relaxation mechanisms in compressively strained thin SiGe-on-insulator films grown by selective Si oxidation

Marika Gunji, Ann F. Marshall, Paul C. McIntyre

J. Appl. Phys. 109, 014324 (2011)

https://doi.org/10.1063/1.3506420

Published: January 2011

View article titled, Strain relaxation mechanisms in compressively strained thin SiGe-on-insulator films grown by selective Si oxidation

Includes: Supplementary data

Journal Articles

Interface-controlled layer exchange in metal-induced crystallization of germanium thin films

Shu Hu (胡澍), Ann F. Marshall, Paul C. McIntyre

Appl. Phys. Lett. 97, 082104 (2010)

https://doi.org/10.1063/1.3480600

Published: August 2010

View article titled, Interface-controlled layer exchange in metal-induced crystallization of germanium thin films

Includes: Supplementary data

NARROW

Topics

Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)

Plasmons and inter-band transitions of hexagonal close packed gold nanoparticles

Bias temperature stress induced hydrogen depassivation from Al₂O₃/InGaAs interface defects

Low temperature thermal ALD of a SiN_x interfacial diffusion barrier and interface passivation layer on Si_xGe_{1− x}(001) and Si_xGe_{1− x}(110)

Characterization of the photocurrents generated by the laser of atomic force microscopes

Border trap reduction in Al₂O₃/InGaAs gate stacks

Control of InGaAs and InAs facets using metal modulation epitaxy

Effects of oxide thickness and temperature on dispersions in InGaAs MOS C-V characteristics

Subcutaneous oxidation of In_0.53Ga_0.47As(100) through ultra-thin atomic layer deposited Al₂O₃

Kinetics of germanium nanowire growth by the vapor-solid-solid mechanism with a Ni-based catalyst

Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al₂O₃/InGaAs(100) interfaces

Effects of surface oxide formation on germanium nanowire band-edge photoluminescence

New method for determining flat-band voltage in high mobility semiconductors

Temperature-dependent capacitance-voltage analysis of defects in Al₂O₃ gate dielectric stacks on GaN

Nucleation and growth kinetics during metal-induced layer exchange crystallization of Ge thin films at low temperatures

Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

Ultrathin ALD-Al₂O₃ layers for Ge(001) gate stacks: Local composition evolution and dielectric properties

Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics

Strain relaxation mechanisms in compressively strained thin SiGe-on-insulator films grown by selective Si oxidation

Interface-controlled layer exchange in metal-induced crystallization of germanium thin films

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