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Journal Articles

Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy

G. Naresh-Kumar, P. R. Edwards, T. Batten, M. Nouf-Allehiani, A. Vilalta-Clemente, A. J. Wilkinson, E. Le Boulbar, P. A. Shields, B. Starosta, B. Hourahine, R. W. Martin, C. Trager-Cowan

J. Appl. Phys. 131, 075303 (2022)

https://doi.org/10.1063/5.0080024

Published: February 2022

View articletitled, Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy

Includes: Supplementary data

Journal Articles

Acceptor state anchoring in gallium nitride

D. Cameron, K. P. O'Donnell, P. R. Edwards, M. Peres, K. Lorenz, M. J. Kappers, M. Boćkowski

Appl. Phys. Lett. 116, 102105 (2020)

https://doi.org/10.1063/1.5142168

Published: March 2020

View articletitled, Acceptor state anchoring in gallium nitride

Journal Articles

Optical and structural properties of dislocations in InGaN

F. C.-P. Massabuau, M. K. Horton, E. Pearce, S. Hammersley, P. Chen, M. S. Zielinski, T. F. K. Weatherley, G. Divitini, P. R. Edwards, M. J. Kappers, C. McAleese, M. A. Moram, C. J. Humphreys, P. Dawson, R. A. Oliver

J. Appl. Phys. 125, 165701 (2019)

https://doi.org/10.1063/1.5084330

Published: April 2019

View articletitled, Optical and structural properties of dislocations in InGaN

Includes: Supplementary data

Journal Articles

The band structure of CuInTe₂ studied by optical reflectivity

M. V. Yakushev, A. V. Mudryi, E. Kärber, P. R. Edwards, R. W. Martin

Appl. Phys. Lett. 114, 062103 (2019)

https://doi.org/10.1063/1.5079971

Published: February 2019

View articletitled, The band structure of CuInTe2 studied by optical reflectivity

Journal Articles

Extended X-ray absorption fine structure study of the Er bonding in AlNO:Er_x films with x ≤ 3.6%

M. Katsikini, V. Kachkanov, P. Boulet, P. R. Edwards, K. P. O'Donnell, V. Brien

J. Appl. Phys. 124, 085705 (2018)

https://doi.org/10.1063/1.5036614

Published: August 2018

View articletitled, Extended X-ray absorption fine structure study of the Er bonding in AlNO:Erx films with x ≤ 3.6%

Includes: Supplementary data

Journal Articles

Cathodoluminescence studies of chevron features in semi-polar ( 11 2 ¯ 2 ) InGaN/GaN multiple quantum well structures

C. Brasser, J. Bruckbauer, Y. Gong, L. Jiu, J. Bai, M. Warzecha, P. R. Edwards, T. Wang, R. W. Martin

J. Appl. Phys. 123, 174502 (2018)

https://doi.org/10.1063/1.5021883

Published: May 2018

View articletitled, Cathodoluminescence studies of chevron features in semi-polar ( 11 2 ¯ 2 ) InGaN/GaN multiple quantum well structures

Journal Articles

Luminescence of Eu³⁺ in GaN(Mg, Eu): Transitions from the ⁵D₁ level

A. K. Singh, K. P. O'Donnell, P. R. Edwards, D. Cameron, K. Lorenz, M. J. Kappers, M. Boćkowski, M. Yamaga, R. Prakash

Appl. Phys. Lett. 111, 241105 (2017)

https://doi.org/10.1063/1.5001143

Published: December 2017

View articletitled, Luminescence of Eu3+ in GaN(Mg, Eu): Transitions from the 5D1 level

Journal Articles

Crystalfield symmetries of luminescent Eu³⁺ centers in GaN: The importance of the ⁵D_{to ⁷F₁ transition}

K. P. O'Donnell, P. R. Edwards, M. Yamaga, K. Lorenz, M. J. Kappers, M. Boćkowski

Appl. Phys. Lett. 108, 022102 (2016)

https://doi.org/10.1063/1.4939631

Published: January 2016

View articletitled, Crystalfield symmetries of luminescent Eu3+ centers in GaN: The importance of the 5D to 7F1 transition

Journal Articles

Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

M. J. Wallace, P. R. Edwards, M. J. Kappers, M. A. Hopkins, F. Oehler, S. Sivaraya, R. A. Oliver, C. J. Humphreys, D. W. E. Allsopp, R. W. Martin

J. Appl. Phys. 117, 115705 (2015)

https://doi.org/10.1063/1.4915628

Published: March 2015

View articletitled, Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

Journal Articles

Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

Y. D. Zhuang, J. Bruckbauer, P. A. Shields, P. R. Edwards, R. W. Martin, D. W. E. Allsopp

J. Appl. Phys. 116, 174305 (2014)

https://doi.org/10.1063/1.4898685

Published: November 2014

View articletitled, Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

Journal Articles

Excitonic localization in AlN-rich Al_xGa_1−xN/Al_yGa_1−yN multi-quantum-well grain boundaries

Idris A. Ajia, P. R. Edwards, Z. Liu, J. C. Yan, R. W. Martin, I. S. Roqan

Appl. Phys. Lett. 105, 122111 (2014)

https://doi.org/10.1063/1.4896681

Published: September 2014

View articletitled, Excitonic localization in AlN-rich AlxGa1−xN/AlyGa1−yN multi-quantum-well grain boundaries

Journal Articles

Strong photonic crystal behavior in regular arrays of core-shell and quantum disc InGaN/GaN nanorod light-emitting diodes

C. J. Lewins, E. D. Le Boulbar, S. M. Lis, P. R. Edwards, R. W. Martin, P. A. Shields, D. W. E. Allsopp

J. Appl. Phys. 116, 044305 (2014)

https://doi.org/10.1063/1.4891236

Published: July 2014

View articletitled, Strong photonic crystal behavior in regular arrays of core-shell and quantum disc InGaN/GaN nanorod light-emitting diodes

Journal Articles

Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

M. J. Wallace, P. R. Edwards, M. J. Kappers, M. A. Hopkins, F. Oehler, S. Sivaraya, D. W. E. Allsopp, R. A. Oliver, C. J. Humphreys, R. W. Martin

J. Appl. Phys. 116, 033105 (2014)

https://doi.org/10.1063/1.4890497

Published: July 2014

View articletitled, Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

Journal Articles

Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN

K. P. O'Donnell, R. W. Martin, P. R. Edwards, K. Lorenz, E. Alves, M. Boćkowski

AIP Conf. Proc. 1566, 63–64 (2013)

https://doi.org/10.1063/1.4848286

Published: December 2013

View articletitled, Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN

Journal Articles

Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays

E. D. Le Boulbar, I. Gîrgel, C. J. Lewins, P. R. Edwards, R. W. Martin, A. Šatka, D. W. E. Allsopp, P. A. Shields

J. Appl. Phys. 114, 094302 (2013)

https://doi.org/10.1063/1.4819440

Published: September 2013

View articletitled, Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays

Journal Articles

Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

G. Naresh-Kumar, C. Mauder, K. R. Wang, S. Kraeusel, J. Bruckbauer, P. R. Edwards, B. Hourahine, H. Kalisch, A. Vescan, C. Giesen, M. Heuken, A. Trampert, A. P. Day, C. Trager-Cowan

Appl. Phys. Lett. 102, 142103 (2013)

https://doi.org/10.1063/1.4801469

Published: April 2013

View articletitled, Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

Journal Articles

Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array

K. J. Lethy, P. R. Edwards, C. Liu, W. N. Wang, R. W. Martin

J. Appl. Phys. 112, 023507 (2012)

https://doi.org/10.1063/1.4737418

Published: July 2012

View articletitled, Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array

Journal Articles

Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging

E. Y. Xie, Z. Z. Chen, P. R. Edwards, Z. Gong, N. Y. Liu, Y. B. Tao, Y. F. Zhang, Y. J. Chen, I. M. Watson, E. Gu, R. W. Martin, G. Y. Zhang, M. D. Dawson

J. Appl. Phys. 112, 013107 (2012)

https://doi.org/10.1063/1.4733335

Published: July 2012

View articletitled, Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging

Journal Articles

InGaN epilayer characterization by microfocused x-ray reciprocal space mapping

V. Kachkanov, I. P. Dolbnya, K. P. O’Donnell, R. W. Martin, P. R. Edwards, S. Pereira

Appl. Phys. Lett. 99, 181909 (2011)

https://doi.org/10.1063/1.3658619

Published: November 2011

View articletitled, InGaN epilayer characterization by microfocused x-ray reciprocal space mapping

Journal Articles

Carrier localization and related photoluminescence in cubic AlGaN epilayers

R. E. L. Powell, S. V. Novikov, F. Luckert, P. R. Edwards, A. V. Akimov, C. T. Foxon, R. W. Martin, A. J. Kent

J. Appl. Phys. 110, 063517 (2011)

https://doi.org/10.1063/1.3632988

Published: September 2011

View articletitled, Carrier localization and related photoluminescence in cubic AlGaN epilayers

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Non-destructive imaging of residual strains in GaN and their effect on optical and electrical properties using correlative light–electron microscopy

Acceptor state anchoring in gallium nitride

Optical and structural properties of dislocations in InGaN

The band structure of CuInTe₂ studied by optical reflectivity

Extended X-ray absorption fine structure study of the Er bonding in AlNO:Er_x films with x ≤ 3.6%

Cathodoluminescence studies of chevron features in semi-polar ( 11 2 ¯ 2 ) InGaN/GaN multiple quantum well structures

Luminescence of Eu³⁺ in GaN(Mg, Eu): Transitions from the ⁵D₁ level

Crystalfield symmetries of luminescent Eu³⁺ centers in GaN: The importance of the ⁵D_{to ⁷F₁ transition}

Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

Excitonic localization in AlN-rich Al_xGa_1−xN/Al_yGa_1−yN multi-quantum-well grain boundaries

Strong photonic crystal behavior in regular arrays of core-shell and quantum disc InGaN/GaN nanorod light-emitting diodes

Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

Temperature-dependent hysteresis of the emission spectrum of Eu-implanted, Mg-doped HVPE GaN

Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays

Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array

Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging

InGaN epilayer characterization by microfocused x-ray reciprocal space mapping

Carrier localization and related photoluminescence in cubic AlGaN epilayers

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