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Journal Articles

Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

Chien-Fong Lo, B. H. Chu, S. J. Pearton, A. Dabiran, P. P. Chow, S. Doré, S. C. Hung, C. W. Chen, F. Ren

Appl. Phys. Lett. 99, 142107 (2011)

https://doi.org/10.1063/1.3647561

Published: October 2011

View article titled, Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

Journal Articles

Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, Z. G. Wang, S. Qu, B. Cui, A. M. Wowchak, A. M. Dabiran, P. P. Chow

J. Appl. Phys. 109, 093708 (2011)

https://doi.org/10.1063/1.3590399

Published: May 2011

View article titled, Improvement of electroluminescent performance of <em>n</em>-ZnO/AlN/<em>p</em>-GaN light-emitting diodes by optimizing the AlN barrier layer

Journal Articles

Proton irradiation effects on AlN/GaN high electron mobility transistors

C. F. Lo, C. Y. Chang, B. H. Chu, H.-Y. Kim, J. Kim, David A. Cullen, Lin Zhou, David. J. Smith, S. J. Pearton, Amir Dabiran, B. Cui, P. P. Chow, S. Jang, F. Ren

J. Vac. Sci. Technol. B 28, L47–L51 (2010)

https://doi.org/10.1116/1.3482335

Published: August 2010

View article titled, Proton irradiation effects on AlN/GaN high electron mobility transistors

Journal Articles

Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors

C. F. Lo, C. Y. Chang, B. H. Chu, S. J. Pearton, A. Dabiran, P. P. Chow, F. Ren

Appl. Phys. Lett. 96, 232106 (2010)

https://doi.org/10.1063/1.3454279

Published: June 2010

View article titled, Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors

Journal Articles

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

J. B. You, X. W. Zhang, S. G. Zhang, J. X. Wang, Z. G. Yin, H. R. Tan, W. J. Zhang, P. K. Chu, B. Cui, A. M. Wowchak, A. M. Dabiran, P. P. Chow

Appl. Phys. Lett. 96, 201102 (2010)

https://doi.org/10.1063/1.3430039

Published: May 2010

View article titled, Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

Journal Articles

Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, A. M. Dabiran, P. P. Chow, A. M. Wowchak, S. J. Pearton

J. Appl. Phys. 107, 023708 (2010)

https://doi.org/10.1063/1.3285408

Published: January 2010

View article titled, Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy

Journal Articles

Passivation of Al N ∕ Ga N high electron mobility transistor using ozone treatment

C. F. Lo, C. Y. Chang, S. J. Pearton, I. I. Kravchenko, A. M. Dabiran, A. M. Wowchak, B. Cui, P. P. Chow, F. Ren

J. Vac. Sci. Technol. B 28, 52–55 (2010)

https://doi.org/10.1116/1.3271333

Published: January 2010

View article titled, Passivation of Al N ∕ Ga N high electron mobility transistor using ozone treatment

Journal Articles

Detection of an endocrine disrupter biomarker, vitellogenin, in largemouth bass serum using AlGaN/GaN high electron mobility transistors

Byung Hwan Chu, C. Y. Chang, Kevin Kroll, Nancy Denslow, Yu-Lin Wang, S. J. Pearton, A. M. Dabiran, A. M. Wowchak, B. Cui, P. P. Chow, Fan Ren

Appl. Phys. Lett. 96, 013701 (2010)

https://doi.org/10.1063/1.3279159

Published: January 2010

View article titled, Detection of an endocrine disrupter biomarker, vitellogenin, in largemouth bass serum using AlGaN/GaN high electron mobility transistors

Journal Articles

Alpha particle detection with GaN Schottky diodes

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, E. A. Kozhukhova, I. M. Gazizov, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, A. V. Korulin, V. M. Zalyetin, S. J. Pearton, I.-H. Lee, A. M. Dabiran, P. P. Chow

J. Appl. Phys. 106, 103708 (2009)

https://doi.org/10.1063/1.3261806

Published: November 2009

View article titled, Alpha particle detection with GaN Schottky diodes

Journal Articles

Comparison of electrical properties and deep traps in p -Al x Ga 1 − x N grown by molecular beam epitaxy and metal organic chemical vapor deposition

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, A. M. Dabiran, P. P. Chow, A. M. Wowchak, In-Hwan Lee, Jin-Woo Ju, S. J. Pearton

J. Appl. Phys. 106, 073706 (2009)

https://doi.org/10.1063/1.3238508

Published: October 2009

View article titled, Comparison of electrical properties and deep traps in p -Al x Ga 1 − x N grown by molecular beam epitaxy and metal organic chemical vapor deposition

Journal Articles

Development of enhancement mode AlN/GaN high electron mobility transistors

C. Y. Chang, S. J. Pearton, C. F. Lo, F. Ren, I. I. Kravchenko, A. M. Dabiran, A. M. Wowchak, B. Cui, P. P. Chow

Appl. Phys. Lett. 94, 263505 (2009)

https://doi.org/10.1063/1.3168648

Published: June 2009

View article titled, Development of enhancement mode AlN/GaN high electron mobility transistors

Journal Articles

Minipressure sensor using AlGaN/GaN high electron mobility transistors

S. C. Hung, B. H. Chou, C. Y. Chang, C. F. Lo, K. H. Chen, Y. L. Wang, S. J. Pearton, Amir Dabiran, P. P. Chow, G. C. Chi, F. Ren

Appl. Phys. Lett. 94, 043903 (2009)

https://doi.org/10.1063/1.3072606

Published: January 2009

View article titled, Minipressure sensor using AlGaN/GaN high electron mobility transistors

Journal Articles

Botulinum toxin detection using Al Ga N ∕ Ga N high electron mobility transistors

Yu-Lin Wang, B. H. Chu, K. H. Chen, C. Y. Chang, T. P. Lele, Y. Tseng, S. J. Pearton, J. Ramage, D. Hooten, A. Dabiran, P. P. Chow, F. Ren

Appl. Phys. Lett. 93, 262101 (2008)

https://doi.org/10.1063/1.3056612

Published: December 2008

View article titled, Botulinum toxin detection using Al Ga N ∕ Ga N high electron mobility transistors

Journal Articles

Hybrid CdZnO/GaN quantum-well light emitting diodes

J. W. Mares, M. Falanga, A. V. Thompson, A. Osinsky, J. Q. Xie, B. Hertog, A. Dabiran, P. P. Chow, S. Karpov, W. V. Schoenfeld

J. Appl. Phys. 104, 093107 (2008)

https://doi.org/10.1063/1.3013446

Published: November 2008

View article titled, Hybrid CdZnO/GaN quantum-well light emitting diodes

Journal Articles

Electron irradiation of Al Ga N ∕ Ga N and Al N ∕ Ga N heterojunctions

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, S. J. Pearton, A. M. Dabiran, A. M. Wowchak, B. Cui, A. V. Osinsky, P. P. Chow, N. G. Kolin, V. M. Boiko, D. I. Merkurisov

Appl. Phys. Lett. 93, 152101 (2008)

https://doi.org/10.1063/1.3000613

Published: October 2008

View article titled, Electron irradiation of Al Ga N ∕ Ga N and Al N ∕ Ga N heterojunctions

Journal Articles

Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, T. G. Yugova, A. M. Dabiran, A. M. Wowchak, B. Cui, A. V. Osinsky, P. P. Chow, S. J. Pearton, K. D. Scherbatchev, V. T. Bublik

J. Appl. Phys. 104, 053702 (2008)

https://doi.org/10.1063/1.2973463

Published: September 2008

View article titled, Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions

Journal Articles

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

A. M. Dabiran, A. M. Wowchak, A. Osinsky, J. Xie, B. Hertog, B. Cui, D. C. Look, P. P. Chow

Appl. Phys. Lett. 93, 082111 (2008)

https://doi.org/10.1063/1.2970991

Published: August 2008

View article titled, Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

Journal Articles

Electrical properties of GaN (Fe) buffers for Al Ga N ∕ Ga N high electron mobility transistor structures

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, T. G. Yugova, A. V. Markov, A. M. Dabiran, A. M. Wowchak, B. Cui, J. Xie, A. V. Osinsky, P. P. Chow, S. J. Pearton

Appl. Phys. Lett. 92, 042110 (2008)

https://doi.org/10.1063/1.2838734

Published: January 2008

View article titled, Electrical properties of GaN (Fe) buffers for Al Ga N ∕ Ga N high electron mobility transistor structures

Journal Articles

Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN ∕ GaN heterostructure transistors

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, A. M. Dabiran, A. M. Wowchak, A. V. Osinsky, B. Cui, P. P. Chow, S. J. Pearton

Appl. Phys. Lett. 91, 232116 (2007)

https://doi.org/10.1063/1.2823607

Published: December 2007

View article titled, Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN ∕ GaN heterostructure transistors

Journal Articles

Optical characterization of ZnMnO-based dilute magnetic semiconductor structures

I. A. Buyanova, W. M. Chen, M. P. Ivill, R. Pate, D. P. Norton, S. J. Pearton, J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, P. P. Chow

J. Vac. Sci. Technol. B 24, 259–262 (2006)

https://doi.org/10.1116/1.2163884

Published: January 2006

View article titled, Optical characterization of ZnMnO-based dilute magnetic semiconductor structures

NARROW

Topics

Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer

Proton irradiation effects on AlN/GaN high electron mobility transistors

Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy

Passivation of Al N ∕ Ga N high electron mobility transistor using ozone treatment

Detection of an endocrine disrupter biomarker, vitellogenin, in largemouth bass serum using AlGaN/GaN high electron mobility transistors

Alpha particle detection with GaN Schottky diodes

Comparison of electrical properties and deep traps in p -Al x Ga 1 − x N grown by molecular beam epitaxy and metal organic chemical vapor deposition

Development of enhancement mode AlN/GaN high electron mobility transistors

Minipressure sensor using AlGaN/GaN high electron mobility transistors

Botulinum toxin detection using Al Ga N ∕ Ga N high electron mobility transistors

Hybrid CdZnO/GaN quantum-well light emitting diodes

Electron irradiation of Al Ga N ∕ Ga N and Al N ∕ Ga N heterojunctions

Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

Electrical properties of GaN (Fe) buffers for Al Ga N ∕ Ga N high electron mobility transistor structures

Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN ∕ GaN heterostructure transistors

Optical characterization of ZnMnO-based dilute magnetic semiconductor structures

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