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P. N. Robson
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Journal Articles

Multiplication and excess noise in Al x Ga 1−x As/GaAs multilayer avalanche photodiodes

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C. K Chia, B. K. Ng, J. P. R. David, G. J. Rees, R. C. Tozer, M. Hopkinson, R. J. Airey, P. N. Robson
Journal: Journal of Applied Physics
J. Appl. Phys. 94, 2631–2637 (2003)
https://doi.org/10.1063/1.1593217
Published: August 2003
View articletitled, Multiplication and excess noise in Al x Ga 1−x As/GaAs multilayer avalanche photodiodes
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Journal Articles

Fokker–Planck approach to impact ionization distributions in space and time

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Biju Jacob, P. N. Robson, J. P. R. David, G. J. Rees
Journal: Journal of Applied Physics
J. Appl. Phys. 91, 5438–5441 (2002)
https://doi.org/10.1063/1.1458054
Published: April 2002
View articletitled, Fokker–Planck approach to impact ionization distributions in space and time
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Journal Articles

Fokker–Planck model for nonlocal impact ionization in semiconductors

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Biju Jacob, P. N. Robson, J. P. R. David, G. J. Rees
Journal: Journal of Applied Physics
J. Appl. Phys. 90, 1314–1317 (2001)
https://doi.org/10.1063/1.1384854
Published: August 2001
View articletitled, Fokker–Planck model for nonlocal impact ionization in semiconductors
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Journal Articles

Avalanche multiplication in submicron Al x Ga 1−x As/GaAs multilayer structures

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C. K. Chia, J. P. R. David, S. A. Plimmer, G. J. Rees, R. Grey, P. N. Robson
Journal: Journal of Applied Physics
J. Appl. Phys. 88, 2601–2608 (2000)
https://doi.org/10.1063/1.1286329
Published: September 2000
View articletitled, Avalanche multiplication in submicron Al x Ga 1−x As/GaAs multilayer structures
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Journal Articles

Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p + -i-n + diodes

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D. S. Ong, K. F. Li, S. A. Plimmer, G. J. Rees, J. P. R. David, P. N. Robson
Journal: Journal of Applied Physics
J. Appl. Phys. 87, 7885–7891 (2000)
https://doi.org/10.1063/1.373472
Published: June 2000
View articletitled, Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p + -i-n + diodes
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Journal Articles

A scalar variational method for resonant modes of oxide-apertured vertical-cavity surface-emitting lasers

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K. Y. Chang, J. Woodhead, J. Roberts, P. N. Robson
Journal: Journal of Applied Physics
J. Appl. Phys. 87, 10–21 (2000)
https://doi.org/10.1063/1.371819
Published: January 2000
View articletitled, A scalar variational method for resonant modes of oxide-apertured vertical-cavity surface-emitting lasers
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Journal Articles

Impact ionization in Al x Ga 1−x As/GaAs single heterostructures

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C. K. Chia, J. P. R. David, G. J. Rees, S. A. Plimmer, R. Grey, P. N. Robson
Journal: Journal of Applied Physics
J. Appl. Phys. 84, 4363–4369 (1998)
https://doi.org/10.1063/1.368656
Published: October 1998
View articletitled, Impact ionization in Al x Ga 1−x As/GaAs single heterostructures
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Journal Articles

A simple model to determine multiplication and noise in avalanche photodiodes

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D. S. Ong, K. F. Li, G. J. Rees, J. P. R. David, P. N. Robson
Journal: Journal of Applied Physics
J. Appl. Phys. 83, 3426–3428 (1998)
https://doi.org/10.1063/1.367111
Published: March 1998
View articletitled, A simple model to determine multiplication and noise in avalanche photodiodes
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Journal Articles

Modal and threshold analysis of dielectric-apertured vertical cavity surface emitting lasers

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K. Y. Chang, J. Woodhead, P. N. Robson
Journal: Applied Physics Letters
Appl. Phys. Lett. 72, 335–337 (1998)
https://doi.org/10.1063/1.120728
Published: January 1998
View articletitled, Modal and threshold analysis of dielectric-apertured vertical cavity surface emitting lasers
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Journal Articles

Monte Carlo estimation of avalanche noise in thin p + -i-n + GaAs diodes

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D. S. Ong, K. F. Li, G. J. Rees, J. P. R. David, P. N. Robson, G. M. Dunn
Journal: Applied Physics Letters
Appl. Phys. Lett. 72, 232–234 (1998)
https://doi.org/10.1063/1.120695
Published: January 1998
View articletitled, Monte Carlo estimation of avalanche noise in thin p + -i-n + GaAs diodes
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Journal Articles

Electron multiplication in Al x Ga 1−x As/GaAs heterostructures

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C. K. Chia, J. P. R. David, G. J. Rees, P. N. Robson, S. A. Plimmer, R. Grey
Journal: Applied Physics Letters
Appl. Phys. Lett. 71, 3877–3879 (1997)
https://doi.org/10.1063/1.120531
Published: December 1997
View articletitled, Electron multiplication in Al x Ga 1−x As/GaAs heterostructures
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Journal Articles

Impact ionization coefficients in GaInP p–i–n diodes

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R. Ghin, J. P. R. David, M. Hopkinson, M. A. Pate, G. J. Rees, P. N. Robson
Journal: Applied Physics Letters
Appl. Phys. Lett. 70, 3567–3569 (1997)
https://doi.org/10.1063/1.119235
Published: June 1997
View articletitled, Impact ionization coefficients in GaInP p–i–n diodes
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Journal Articles

Excitation power and barrier width dependence of photoluminescence in piezoelectric multiquantum well p‐i‐n structures

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J. P. R. David, T. E. Sale, A. S. Pabla, P. J. Rodríguez‐Gironés, J. Woodhead, R. Grey, G. J. Rees, P. N. Robson, M. S. Skolnick, R. A. Hogg
Journal: Applied Physics Letters
Appl. Phys. Lett. 68, 820–822 (1996)
https://doi.org/10.1063/1.116544
Published: February 1996
View articletitled, Excitation power and barrier width dependence of photoluminescence in piezoelectric multiquantum well p‐i‐n structures
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Journal Articles

Effect of misfit dislocations on leakage currents in strained multiquantum well structures

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J. P. R. David, Y. H. Chen, R. Grey, G. Hill, P. N. Robson, P. Kightley
Journal: Applied Physics Letters
Appl. Phys. Lett. 67, 906–908 (1995)
https://doi.org/10.1063/1.114690
Published: August 1995
View articletitled, Effect of misfit dislocations on leakage currents in strained multiquantum well structures
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Journal Articles

Avalanche breakdown in AlxGa1−xAs alloys and Al0.3Ga 0.7 As / GaAs multilayers

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J. P. R. David, J. Allam, A. R. Adams, J. S. Roberts, R. Grey, G. J. Rees, P. N. Robson
Journal: Applied Physics Letters
Appl. Phys. Lett. 66, 2876–2878 (1995)
https://doi.org/10.1063/1.113459
Published: May 1995
View articletitled, Avalanche breakdown in AlxGa1−xAs alloys and Al0.3Ga 0.7 As / GaAs multilayers
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Journal Articles

Carrier screening effects in piezoelectric strained InGaAs/GaAs quantum wells grown on the [111]B axis

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T. E. Sale, J. Woodhead, G. J. Rees, R. Grey, J. P. R. David, A. S. Pabla, P. J. Rodriguez‐Gíronés, P. N. Robson, R. A. Hogg, M. S. Skolnick
Journal: Journal of Applied Physics
J. Appl. Phys. 76, 5447–5452 (1994)
https://doi.org/10.1063/1.357202
Published: November 1994
View articletitled, Carrier screening effects in piezoelectric strained InGaAs/GaAs quantum wells grown on the [111]B axis
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Journal Articles

Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111)B GaAs

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A. S. Pabla, J. L. Sanchez‐Rojas, J. Woodhead, R. Grey, J. P. R. David, G. J. Rees, G. Hill, M. A. Pate, P. N. Robson, R. A. Hogg, T. A. Fisher, A. R. K. Willcox, D. M. Whittaker, M. S. Skolnick, D. J. Mowbray
Journal: Applied Physics Letters
Appl. Phys. Lett. 63, 752–754 (1993)
https://doi.org/10.1063/1.109925
Published: August 1993
View articletitled, Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111)B GaAs
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Journal Articles

Enhanced breakdown voltages in strained InGaAs/GaAs structures

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J. P. R. David, M. J. Morley, A. R. Wolstenholme, R. Grey, M. A. Pate, G. Hill, G. J. Rees, P. N. Robson
Journal: Applied Physics Letters
Appl. Phys. Lett. 61, 2042–2044 (1992)
https://doi.org/10.1063/1.108354
Published: October 1992
View articletitled, Enhanced breakdown voltages in strained InGaAs/GaAs structures
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Journal Articles

Bistable self‐electro‐optic operation of strained In0.1Ga0.9As/GaAs asymmetric Fabry–Perot modulators

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T. E. Sale, J. Woodhead, A. S. Pabla, R. Grey, P. A. Claxton, P. N. Robson, M. H. Moloney, J. Hegarty
Journal: Applied Physics Letters
Appl. Phys. Lett. 59, 1670–1672 (1991)
https://doi.org/10.1063/1.106263
Published: September 1991
View articletitled, Bistable self‐electro‐optic operation of strained In0.1Ga0.9As/GaAs asymmetric Fabry–Perot modulators
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Journal Articles

130 ps recovery of all‐optical switching in a GaAs multiquantum well directional coupler

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P. LiKamWa, A. Miller, J. S. Roberts, P. N. Robson
Journal: Applied Physics Letters
Appl. Phys. Lett. 58, 2055–2057 (1991)
https://doi.org/10.1063/1.105008
Published: May 1991
View articletitled, 130 ps recovery of all‐optical switching in a GaAs multiquantum well directional coupler
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