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Journal Articles

Dual-wavelength InP quantum dot lasers

S. Shutts, P. M. Smowton, A. B. Krysa
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 241106 (2014)
https://doi.org/10.1063/1.4883857
Published: June 2014
View article titled, Dual-wavelength InP quantum dot lasers
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Journal Articles

Fermi-dirac and random carrier distributions in quantum dot lasers

M. Hutchings, I. O'Driscoll, P. M. Smowton, P. Blood
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 031103 (2014)
https://doi.org/10.1063/1.4862813
Published: January 2014
View article titled, Fermi-dirac and random carrier distributions in quantum dot lasers
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Journal Articles

Femtosecond pulse generation in passively mode locked InAs quantum dot lasers

P. Finch, P. Blood, P. M. Smowton, A. Sobiesierski, R. M. Gwilliam, I. O'Driscoll
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 131109 (2013)
https://doi.org/10.1063/1.4822433
Published: September 2013
View article titled, Femtosecond pulse generation in passively mode locked InAs quantum dot lasers
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Journal Articles

InP quantum dot lasers with temperature insensitive operating wavelength

S. Shutts, P. M. Smowton, A. B. Krysa
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 061106 (2013)
https://doi.org/10.1063/1.4817732
Published: August 2013
View article titled, InP quantum dot lasers with temperature insensitive operating wavelength
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Journal Articles

Effect of proton bombardment on InAs dots and wetting layer in laser structures

I. O’Driscoll, P. Blood, P. M. Smowton, A. Sobiesierski, R. Gwilliam
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 261105 (2012)
https://doi.org/10.1063/1.4730964
Published: June 2012
View article titled, Effect of proton bombardment on InAs dots and wetting layer in laser structures
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Journal Articles

Temperature dependence of the gain peak in p-doped InAs quantum dot lasers

M. Hutchings, I. O’Driscoll, P. M. Smowton, P. Blood
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 151118 (2011)
https://doi.org/10.1063/1.3652702
Published: October 2011
View article titled, Temperature dependence of the gain peak in p-doped InAs quantum dot lasers
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Journal Articles

Many-body effects in InAs/GaAs quantum dot laser structures

I. O’Driscoll, M. Hutchings, P. M. Smowton, P. Blood
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 141102 (2010)
https://doi.org/10.1063/1.3496011
Published: October 2010
View article titled, Many-body effects in InAs/GaAs quantum dot laser structures
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Journal Articles

The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices

D. Naidu, P. M. Smowton, H. D. Summers
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 043108 (2010)
https://doi.org/10.1063/1.3471812
Published: August 2010
View article titled, The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices
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Journal Articles

Nonradiative recombination in 1.56   μ m GaInNAsSb/GaNAs quantum-well lasers

J. W. Ferguson, P. M. Smowton, P. Blood, H. Bae, T. Sarmiento, J. S. Harris, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 231104 (2009)
https://doi.org/10.1063/1.3271182
Published: December 2009
View article titled, Nonradiative recombination in 1.56   μ m GaInNAsSb/GaNAs quantum-well lasers
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Journal Articles

Control of polarization and dipole moment in low-dimensional semiconductor nanostructures

L. H. Li (李联合), M. Mexis, P. Ridha, M. Bozkurt, G. Patriarche, P. M. Smowton, P. Blood, P. M. Koenraad, A. Fiore
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 221116 (2009)
https://doi.org/10.1063/1.3269592
Published: December 2009
View article titled, Control of polarization and dipole moment in low-dimensional semiconductor nanostructures
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Journal Articles

Gain in p -doped quantum dot lasers

P. M. Smowton, I. C. Sandall, H. Y. Liu, M. Hopkinson
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 013107 (2007)
https://doi.org/10.1063/1.2405738
Published: January 2007
View article titled, Gain in p -doped quantum dot lasers
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Journal Articles

Modeling multiple quantum barrier effects and reduced electron leakage in red-emitting laser diodes

M. R. Brown, R. J. Cobley, K. S. Teng, P. Rees, S. P. Wilks, A. Sobiesierski, P. M. Smowton, P. Blood
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 084509 (2006)
https://doi.org/10.1063/1.2362906
Published: October 2006
View article titled, Modeling multiple quantum barrier effects and reduced electron leakage in red-emitting laser diodes
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Journal Articles

Temperature dependence of threshold current in p -doped quantum dot lasers

I. C. Sandall, P. M. Smowton, J. D. Thomson, T. Badcock, D. J. Mowbray, H.-Y. Liu, M. Hopkinson
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 151118 (2006)
https://doi.org/10.1063/1.2361167
Published: October 2006
View article titled, Temperature dependence of threshold current in p -doped quantum dot lasers
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Journal Articles

The effect of p doping in InAs quantum dot lasers

I. C. Sandall, P. M. Smowton, C. L. Walker, T. Badcock, D. J. Mowbray, H. Y. Liu, M. Hopkinson
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 111113 (2006)
https://doi.org/10.1063/1.2186078
Published: March 2006
View article titled, The effect of p doping in InAs quantum dot lasers
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Journal Articles

The influence of acceptor anneal temperature on the performance of InGaN/GaN quantum well light-emitting diodes

J. D. Thomson, I. A. Pope, P. M. Smowton, P. Blood, R. J. Lynch, G. Hill, T. Wang, P. Parbrook
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 024507 (2006)
https://doi.org/10.1063/1.2165405
Published: January 2006
View article titled, The influence of acceptor anneal temperature on the performance of InGaN/GaN quantum well light-emitting diodes
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Journal Articles

Determination of the piezoelectric field in InGaN quantum wells

I. H. Brown, I. A. Pope, P. M. Smowton, P. Blood, J. D. Thomson, W. W. Chow, D. P. Bour, M. Kneissl
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 131108 (2005)
https://doi.org/10.1063/1.1896446
Published: March 2005
View article titled, Determination of the piezoelectric field in InGaN quantum wells
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Journal Articles

Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers

D. J. Palmer, P. M. Smowton, P. Blood, Jeng-Ya Yeh, L. J. Mawst, Nelson Tansu
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 071121 (2005)
https://doi.org/10.1063/1.1868070
Published: February 2005
View article titled, Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers
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Journal Articles

AlGaInP laser diodes incorporating a 3 λ ∕ 4 multiple quantum barrier

A. Sobiesierski, I. C. Sandall, P. M. Smowton, P. Blood, A. B. Krysa, M. R. Brown, K. S. Teng, S. P. Wilks
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 021102 (2005)
https://doi.org/10.1063/1.1849847
Published: December 2004
View article titled, AlGaInP laser diodes incorporating a 3 λ ∕ 4 multiple quantum barrier
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Journal Articles

Gain saturation in In P ∕ Ga In P quantum-dot lasers

J. Lutti, P. M. Smowton, G. M. Lewis, P. Blood, A. B. Krysa, J. C. Lin, P. A. Houston, A. J. Ramsay, D. J. Mowbray
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 011111 (2005)
https://doi.org/10.1063/1.1844600
Published: December 2004
View article titled, Gain saturation in In P ∕ Ga In P quantum-dot lasers
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Journal Articles

Optical properties of InP ∕ GaInP quantum-dot laser structures

G. M. Lewis, J. Lutti, P. M. Smowton, P. Blood, A. B. Krysa, S. L. Liew
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 1904–1906 (2004)
https://doi.org/10.1063/1.1794379
Published: September 2004
View article titled, Optical properties of InP ∕ GaInP quantum-dot laser structures
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