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P. K. Hurley
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Journal Articles

Exploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt structures

J. Muñoz-Gorriz, S. Monaghan, K. Cherkaoui, J. Suñé, P. K. Hurley, E. Miranda
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 215304 (2017)
https://doi.org/10.1063/1.5000004
Published: December 2017
View articletitled, Exploratory study and application of the angular wavelet analysis for assessing the spatial distribution of breakdown spots in Pt/HfO2/Pt structures
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Journal Articles

Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

É. O'Connor, K. Cherkaoui, S. Monaghan, B. Sheehan, I. M. Povey, P. K. Hurley
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 032902 (2017)
https://doi.org/10.1063/1.4973971
Published: January 2017
View articletitled, Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration
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Journal Articles

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

H.-Y. Chou, E. O'Connor, A. O'Mahony, I. M. Povey, P. K. Hurley, Lin Dong, P. D. Ye, V. V. Afanas'ev, M. Houssa, A. Stesmans
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 235701 (2016)
https://doi.org/10.1063/1.4971178
Published: December 2016
View articletitled, Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3
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Journal Articles

Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

V. Djara, K. Cherkaoui, M. A. Negara, P. K. Hurley
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 204107 (2015)
https://doi.org/10.1063/1.4936313
Published: November 2015
View articletitled, Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors
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Journal Articles

Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing

W. Cabrera, B. Brennan, H. Dong, T. P. O'Regan, I. M. Povey, S. Monaghan, É. O'Connor, P. K. Hurley, R. M. Wallace, Y. J. Chabal
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 011601 (2014)
https://doi.org/10.1063/1.4860960
Published: January 2014
View articletitled, Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing
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Includes: Supplementary data
Journal Articles

Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

D. R. Gajula, P. Baine, M. Modreanu, P. K. Hurley, B. M. Armstrong, D. W. McNeill
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 012102 (2014)
https://doi.org/10.1063/1.4858961
Published: January 2014
View articletitled, Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers
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Journal Articles

Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics

X. Saura, J. Suñé, S. Monaghan, P. K. Hurley, E. Miranda
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 154112 (2013)
https://doi.org/10.1063/1.4825321
Published: October 2013
View articletitled, Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics
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Journal Articles

Chemical and electrical characterization of the HfO2/InAlAs interface

B. Brennan, R. V. Galatage, K. Thomas, E. Pelucchi, P. K. Hurley, J. Kim, C. L. Hinkle, E. M. Vogel, R. M. Wallace
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 104103 (2013)
https://doi.org/10.1063/1.4821021
Published: September 2013
View articletitled, Chemical and electrical characterization of the HfO2/InAlAs interface
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Journal Articles

Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates

É. O’Connor, K. Cherkaoui, S. Monaghan, D. O’Connell, I. Povey, P. Casey, S. B. Newcomb, Y. Y. Gomeniuk, G. Provenzano, F. Crupi, G. Hughes, P. K. Hurley
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 124104 (2012)
https://doi.org/10.1063/1.4729331
Published: June 2012
View articletitled, Observation of peripheral charge induced low frequency capacitance-voltage behaviour in metal-oxide-semiconductor capacitors on Si and GaAs substrates
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Journal Articles

Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3

H. Y. Chou, E. O’Connor, P. K. Hurley, V. V. Afanas’ev, M. Houssa, A. Stesmans, P. D. Ye, S. B. Newcomb
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 141602 (2012)
https://doi.org/10.1063/1.3698461
Published: April 2012
View articletitled, Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3
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Includes: Supplementary data
Journal Articles

Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors

M. A. Negara, D. Veksler, J. Huang, G. Ghibaudo, P. K. Hurley, G. Bersuker, N. Goel, P. Kirsch
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 232101 (2011)
https://doi.org/10.1063/1.3665033
Published: December 2011
View articletitled, Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors
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Journal Articles

Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

É. O’Connor, S. Monaghan, K. Cherkaoui, I. M. Povey, P. K. Hurley
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 212901 (2011)
https://doi.org/10.1063/1.3663535
Published: November 2011
View articletitled, Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment
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Journal Articles

Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures

T. P. O’Regan, P. K. Hurley
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 163502 (2011)
https://doi.org/10.1063/1.3652699
Published: October 2011
View articletitled, Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures
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Journal Articles

In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition

M. Milojevic, R. Contreras-Guerrero, E. O’Connor, B. Brennan, P. K. Hurley, J. Kim, C. L. Hinkle, R. M. Wallace
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 042904 (2011)
https://doi.org/10.1063/1.3615666
Published: July 2011
View articletitled, In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition
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Journal Articles

On the calculation of effective electric field in In 0.53 Ga 0.47 As surface channel metal-oxide-semiconductor field-effect-transistors

A. M. Sonnet, R. V. Galatage, P. K. Hurley, E. Pelucchi, K. K. Thomas, A. Gocalinska, J. Huang, N. Goel, G. Bersuker, W. P. Kirk, C. L. Hinkle, R. M. Wallace, E. M. Vogel
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 193501 (2011)
https://doi.org/10.1063/1.3588255
Published: May 2011
View articletitled, On the calculation of effective electric field in In 0.53 Ga 0.47 As surface channel metal-oxide-semiconductor field-effect-transistors
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Journal Articles

Electrical analysis of three-stage passivated In 0.53 Ga 0.47 As capacitors with varying HfO 2 thicknesses and incorporating an Al 2 O 3 interface control layer

S. Monaghan, A. O’Mahony, K. Cherkaoui, É. O’Connor, I. M. Povey, M. G. Nolan, D. O’Connell, M. E. Pemble, P. K. Hurley, G. Provenzano, F. Crupi, S. B. Newcomb
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01A807 (2011)
https://doi.org/10.1116/1.3532826
Published: January 2011
View articletitled, Electrical analysis of three-stage passivated In 0.53 Ga 0.47 As capacitors with varying HfO 2 thicknesses and incorporating an Al 2 O 3 interface control layer
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Journal Articles

A systematic study of ( NH 4 ) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As / InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers

É. O’Connor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S. B. Newcomb, R. Contreras, M. Milojevic, G. Hughes, M. E. Pemble, R. M. Wallace, P. K. Hurley
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 024101 (2011)
https://doi.org/10.1063/1.3533959
Published: January 2011
View articletitled, A systematic study of ( NH 4 ) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As / InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers
Open the PDF for A systematic study of ( NH 4 ) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As / InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers in another window
Journal Articles

Electron band alignment between (100)InP and atomic-layer deposited Al 2 O 3

Hsing-Yi Chou, V. V. Afanas’ev, A. Stesmans, H. C. Lin, P. K. Hurley, S. B. Newcomb
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 132112 (2010)
https://doi.org/10.1063/1.3496039
Published: September 2010
View articletitled, Electron band alignment between (100)InP and atomic-layer deposited Al 2 O 3
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Journal Articles

Structural and electrical analysis of the atomic layer deposition of HfO 2 / n -In 0.53 Ga 0.47 As capacitors with and without an Al 2 O 3 interface control layer

A. O’Mahony, S. Monaghan, G. Provenzano, I. M. Povey, M. G. Nolan, É. O’Connor, K. Cherkaoui, S. B. Newcomb, F. Crupi, P. K. Hurley, M. E. Pemble
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 052904 (2010)
https://doi.org/10.1063/1.3473773
Published: August 2010
View articletitled, Structural and electrical analysis of the atomic layer deposition of HfO 2 / n -In 0.53 Ga 0.47 As capacitors with and without an Al 2 O 3 interface control layer
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Journal Articles

Modeling the capacitance-voltage response of In 0.53 Ga 0.47 As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections

T. P. O’Regan, P. K. Hurley, B. Sorée, M. V. Fischetti
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 213514 (2010)
https://doi.org/10.1063/1.3436645
Published: May 2010
View articletitled, Modeling the capacitance-voltage response of In 0.53 Ga 0.47 As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections
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