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Journal Articles

Influence of Mn dopants on InAs/GaAs quantum dot electronic states

V. D. Dasika, A. V. Semichaevsky, J. P. Petropoulos, J. C. Dibbern, A. M. Dangelewicz, M. Holub, P. K. Bhattacharya, J. M. O. Zide, H. T. Johnson, R. S. Goldman

Appl. Phys. Lett. 98, 141907 (2011)

https://doi.org/10.1063/1.3567510

Published: April 2011

View articletitled, Influence of Mn dopants on InAs/GaAs quantum dot electronic states

Includes: Supplementary data

Journal Articles

Nanometer-scale studies of point defect distributions in GaMnAs alloys

J. N. Gleason, M. E. Hjelmstad, V. D. Dasika, R. S. Goldman, S. Fathpour, S. Charkrabarti, P. K. Bhattacharya

Appl. Phys. Lett. 86, 011911 (2005)

https://doi.org/10.1063/1.1843284

Published: December 2004

View articletitled, Nanometer-scale studies of point defect distributions in GaMnAs alloys

Journal Articles

Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices

W. Chen, B. Shin, R. S. Goldman, A. Stiff, P. K. Bhattacharya

J. Vac. Sci. Technol. B 21, 1920–1923 (2003)

https://doi.org/10.1116/1.1588645

Published: August 2003

View articletitled, Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices

Journal Articles

Lateral indium–indium pair correlations within the wetting layers of buried InAs/GaAs quantum dots

B. Shin, B. Lita, R. S. Goldman, J. D. Phillips, P. K. Bhattacharya

Appl. Phys. Lett. 81, 1423–1425 (2002)

https://doi.org/10.1063/1.1501760

Published: August 2002

View articletitled, Lateral indium–indium pair correlations within the wetting layers of buried InAs/GaAs quantum dots

Journal Articles

Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots

B. Lita, R. S. Goldman, J. D. Phillips, P. K. Bhattacharya

Appl. Phys. Lett. 75, 2797–2799 (1999)

https://doi.org/10.1063/1.125153

Published: November 1999

View articletitled, Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots

Journal Articles

Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots

B. Lita, R. S. Goldman, J. D. Phillips, P. K. Bhattacharya

Appl. Phys. Lett. 74, 2824–2826 (1999)

https://doi.org/10.1063/1.124026

Published: May 1999

View articletitled, Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots

Journal Articles

Surface phenomena and kinetics of Si_1−xGe_x/Si (0≤x<1) growth by molecular beam epitaxy using Si₂H₆ and Ge/GeH₄

F. C. Zhang, J. Singh, P. K. Bhattacharya

J. Vac. Sci. Technol. B 14, 2378–2380 (1996)

https://doi.org/10.1116/1.588865

Published: May 1996

View articletitled, Surface phenomena and kinetics of Si1−xGex/Si (0≤x<1) growth by molecular beam epitaxy using Si2H6 and Ge/GeH4

Journal Articles

Kinetics of Si_1−xGe_x/Si(0≤x≤1) growth by molecular beam epitaxy using disilane and germanium

F. C. Zhang, J. Singh, P. K. Bhattacharya

Appl. Phys. Lett. 67, 85–87 (1995)

https://doi.org/10.1063/1.115516

Published: July 1995

View articletitled, Kinetics of Si1−xGex/Si(0≤x≤1) growth by molecular beam epitaxy using disilane and germanium

Journal Articles

Impact ionization coefficients in Si_1−xGe_x

J. Lee, A. L. Gutierrez‐Aitken, S. H. Li, P. K. Bhattacharya

Appl. Phys. Lett. 66, 204–205 (1995)

https://doi.org/10.1063/1.113134

Published: January 1995

View articletitled, Impact ionization coefficients in Si1−xGex

Journal Articles

Voltage tunable multiple quantum well distributed feedback filter with an electron beam written Schottky grating

O. Zia, P. K. Bhattacharya, J. Singh, T. Brock

J. Appl. Phys. 76, 2550–2552 (1994)

https://doi.org/10.1063/1.358457

Published: August 1994

View articletitled, Voltage tunable multiple quantum well distributed feedback filter with an electron beam written Schottky grating

Journal Articles

Donor‐doping characteristics of gas‐source molecular beam epitaxial Si and Si_1−xGe_x using phosphine

S. H. Li, P. K. Bhattacharya

J. Appl. Phys. 76, 2213–2215 (1994)

https://doi.org/10.1063/1.357636

Published: August 1994

View articletitled, Donor‐doping characteristics of gas‐source molecular beam epitaxial Si and Si1−xGex using phosphine

Journal Articles

Small‐signal modulation and temperature dependence of the tunneling injection laser

L. Davis, H. C. Sun, H. Yoon, P. K. Bhattacharya

Appl. Phys. Lett. 64, 3222–3224 (1994)

https://doi.org/10.1063/1.111342

Published: June 1994

View articletitled, Small‐signal modulation and temperature dependence of the tunneling injection laser

Journal Articles

Direct measurement of the Hall factor for holes in relaxed Si_1−xGe_x (0<x<1)

Y. C. Chen, S. H. Li, P. K. Bhattacharya, J. Singh, J. M. Hinckley

Appl. Phys. Lett. 64, 3110–3111 (1994)

https://doi.org/10.1063/1.111363

Published: June 1994

View articletitled, Direct measurement of the Hall factor for holes in relaxed Si1−xGex (0<x<1)

Journal Articles

Suppression of defect propagation in semiconductors by pseudomorphic layers

Y. C. Chen, J. Singh, P. K. Bhattacharya

J. Appl. Phys. 74, 3800–3804 (1993)

https://doi.org/10.1063/1.354472

Published: September 1993

View articletitled, Suppression of defect propagation in semiconductors by pseudomorphic layers

Journal Articles

Carrier velocity‐field characteristics and alloy scattering potential in Si_1−xGe_x/Si

S. H. Li, J. M. Hinckley, J. Singh, P. K. Bhattacharya

Appl. Phys. Lett. 63, 1393–1395 (1993)

https://doi.org/10.1063/1.109687

Published: September 1993

View articletitled, Carrier velocity‐field characteristics and alloy scattering potential in Si1−xGex/Si

Journal Articles

Erratum: ‘‘Ellipsometric characterization of In_0.52Al_0.48As and of modulation doped field effect transistor structures on InP substrates’’ [Appl. Phys. Lett. 62 , 1411 (1993)]

S. A. Alterovitz, R. M. Sieg, J. Pamulapati, P. K. Bhattacharya

Appl. Phys. Lett. 63, 121 (1993)

https://doi.org/10.1063/1.110820

Published: July 1993

View articletitled, Erratum: ‘‘Ellipsometric characterization of In0.52Al0.48As and of modulation doped field effect transistor structures on InP substrates’’ [Appl. Phys. Lett. 62 , 1411 (1993)]

Journal Articles

Determination of critical layer thickness and strain tensor in In_xGa_1−xAs/GaAs quantum‐well structures by x‐ray diffraction

Y. C. Chen, P. K. Bhattacharya

J. Appl. Phys. 73, 7389–7394 (1993)

https://doi.org/10.1063/1.354030

Published: June 1993

View articletitled, Determination of critical layer thickness and strain tensor in InxGa1−xAs/GaAs quantum‐well structures by x‐ray diffraction

Journal Articles

Photoluminescence and electro‐optic properties of small (25–35 nm diameter) quantum boxes

L. Davis, K. K. Ko, W.‐Q. Li, H. C. Sun, Y. Lam, T. Brock, S. W. Pang, P. K. Bhattacharya, M. J. Rooks

Appl. Phys. Lett. 62, 2766–2768 (1993)

https://doi.org/10.1063/1.109254

Published: May 1993

View articletitled, Photoluminescence and electro‐optic properties of small (25–35 nm diameter) quantum boxes

Journal Articles

Impact ionization coefficients in strained InGaAs/InAlAs multiquantum wells

A. L. Gutierrez‐Aitken, P. K. Bhattacharya

J. Appl. Phys. 73, 5014–5016 (1993)

https://doi.org/10.1063/1.353822

Published: May 1993

View articletitled, Impact ionization coefficients in strained InGaAs/InAlAs multiquantum wells

Journal Articles

Deep level transient spectroscopy and admittance spectroscopy of Si_1−xGe_x/Si grown by gas‐source molecular‐beam epitaxy

S. H. Li, S. R. Smith, P. K. Bhattacharya, S. W. Chung, W. C. Mitchel

J. Vac. Sci. Technol. B 11, 892–894 (1993)

https://doi.org/10.1116/1.586731

Published: May 1993

View articletitled, Deep level transient spectroscopy and admittance spectroscopy of Si1−xGex/Si grown by gas‐source molecular‐beam epitaxy

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Influence of Mn dopants on InAs/GaAs quantum dot electronic states

Nanometer-scale studies of point defect distributions in GaMnAs alloys

Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices

Lateral indium–indium pair correlations within the wetting layers of buried InAs/GaAs quantum dots

Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots

Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots

Surface phenomena and kinetics of Si_1−xGe_x/Si (0≤x<1) growth by molecular beam epitaxy using Si₂H₆ and Ge/GeH₄

Kinetics of Si_1−xGe_x/Si(0≤x≤1) growth by molecular beam epitaxy using disilane and germanium

Impact ionization coefficients in Si_1−xGe_x

Voltage tunable multiple quantum well distributed feedback filter with an electron beam written Schottky grating

Donor‐doping characteristics of gas‐source molecular beam epitaxial Si and Si_1−xGe_x using phosphine

Small‐signal modulation and temperature dependence of the tunneling injection laser

Direct measurement of the Hall factor for holes in relaxed Si_1−xGe_x (0<x<1)

Suppression of defect propagation in semiconductors by pseudomorphic layers

Carrier velocity‐field characteristics and alloy scattering potential in Si_1−xGe_x/Si

Erratum: ‘‘Ellipsometric characterization of In_0.52Al_0.48As and of modulation doped field effect transistor structures on InP substrates’’ [Appl. Phys. Lett. 62 , 1411 (1993)]

Determination of critical layer thickness and strain tensor in In_xGa_1−xAs/GaAs quantum‐well structures by x‐ray diffraction

Photoluminescence and electro‐optic properties of small (25–35 nm diameter) quantum boxes

Impact ionization coefficients in strained InGaAs/InAlAs multiquantum wells

Deep level transient spectroscopy and admittance spectroscopy of Si_1−xGe_x/Si grown by gas‐source molecular‐beam epitaxy

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