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Journal Articles

Evidence for vacancy trapping in Au-hyperdoped Si following pulsed laser melting

W. Yang, N. Ferdous, P. J. Simpson, J. M. Gaudet, Q. Hudspeth, P. K. Chow, J. M. Warrender, A. J. Akey, M. J. Aziz, E. Ertekin, J. S. Williams
Journal: APL Materials
APL Mater. 7, 101124 (2019)
https://doi.org/10.1063/1.5124709
Published: October 2019
View article titled, Evidence for vacancy trapping in Au-hyperdoped Si following pulsed laser melting
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Journal Articles

Si quantum dots in silicon nitride: Quantum confinement and defects

L. V. Goncharova, P. H. Nguyen, V. L. Karner, R. D'Ortenzio, S. Chaudhary, C. R. Mokry, P. J. Simpson
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 224302 (2015)
https://doi.org/10.1063/1.4936369
Published: December 2015
View article titled, Si quantum dots in silicon nitride: Quantum confinement and defects
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Journal Articles

The effect of vacancies on the microwave surface resistance of niobium revealed by positron annihilation spectroscopy

A. Romanenko, C. J. Edwardson, P. G. Coleman, P. J. Simpson
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 232601 (2013)
https://doi.org/10.1063/1.4811090
Published: June 2013
View article titled, The effect of vacancies on the microwave surface resistance of niobium revealed by positron annihilation spectroscopy
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Journal Articles

Quantum confinement in Si and Ge nanostructures

E. G. Barbagiovanni, D. J. Lockwood, P. J. Simpson, L. V. Goncharova
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 034307 (2012)
https://doi.org/10.1063/1.3680884
Published: February 2012
View article titled, Quantum confinement in Si and Ge nanostructures
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Journal Articles

Probing energy transfer in an ensemble of silicon nanocrystals

H. Jayatilleka, D. Diamare, M. Wojdak, A. J. Kenyon, C. R. Mokry, P. J. Simpson, A. P. Knights, I. Crowe, M. P. Halsall
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 033522 (2011)
https://doi.org/10.1063/1.3622151
Published: August 2011
View article titled, Probing energy transfer in an ensemble of silicon nanocrystals
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Journal Articles

Role of vacancy-type defects in the formation of silicon nanocrystals

C. R. Mokry, P. J. Simpson, A. P. Knights
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 114301 (2009)
https://doi.org/10.1063/1.3130103
Published: June 2009
View article titled, Role of vacancy-type defects in the formation of silicon nanocrystals
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Journal Articles

Photoluminescence and positron annihilation spectroscopy of MeV Si + ion-irradiated Si y O 1 − y : Er   ( y ≈ 1 / 3 ) thin films

D. E. Blakie, O. H. Y. Zalloum, J. Wojcik, E. A. Irving, A. P. Knights, P. Mascher, P. J. Simpson
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 053517 (2009)
https://doi.org/10.1063/1.3086644
Published: March 2009
View article titled, Photoluminescence and positron annihilation spectroscopy of MeV Si + ion-irradiated Si y O 1 − y : Er   ( y ≈ 1 / 3 ) thin films
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Journal Articles

Photoluminescence and positron annihilation spectroscopy investigation of (Ge, Er) codoped Si oxides deposited by magnetron sputtering

C. L. Heng, E. Chelomentsev, Z. L. Peng, P. Mascher, P. J. Simpson
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 014312 (2009)
https://doi.org/10.1063/1.3063807
Published: January 2009
View article titled, Photoluminescence and positron annihilation spectroscopy investigation of (Ge, Er) codoped Si oxides deposited by magnetron sputtering
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Journal Articles

Light emission from Si nanoclusters formed at low temperatures

X. D. Pi, O. H. Y. Zalloum, T. Roschuk, J. Wojcik, A. P. Knights, P. Mascher, P. J. Simpson
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 103111 (2006)
https://doi.org/10.1063/1.2183813
Published: March 2006
View article titled, Light emission from Si nanoclusters formed at low temperatures
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Journal Articles

Solid-phase epitaxial regrowth of amorphous layers in Si(100) created by low-energy, high-fluence phosphorus implantation

S. Ruffell, I. V. Mitchell, P. J. Simpson
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 083522 (2005)
https://doi.org/10.1063/1.2113409
Published: October 2005
View article titled, Solid-phase epitaxial regrowth of amorphous layers in Si(100) created by low-energy, high-fluence phosphorus implantation
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Journal Articles

Electrical characterization of 5 keV phosphorous implants in silicon

S. Ruffell, P. J. Simpson, I. V. Mitchell
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 013713 (2005)
https://doi.org/10.1063/1.1935128
Published: July 2005
View article titled, Electrical characterization of 5 keV phosphorous implants in silicon
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Journal Articles

Annealing behavior of low-energy ion-implanted phosphorus in silicon

S. Ruffell, I. V. Mitchell, P. J. Simpson
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 123518 (2005)
https://doi.org/10.1063/1.1929861
Published: June 2005
View article titled, Annealing behavior of low-energy ion-implanted phosphorus in silicon
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Journal Articles

Formation and oxidation of Si nanoclusters in Er-doped Si-rich Si O x

X. D. Pi, O. H. Y. Zalloum, J. Wojcik, A. P. Knights, P. Mascher, A. D. W. Todd, P. J. Simpson
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 096108 (2005)
https://doi.org/10.1063/1.1894600
Published: April 2005
View article titled, Formation and oxidation of Si nanoclusters in Er-doped Si-rich Si O x
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Journal Articles

Observation of fluorine-vacancy complexes in silicon

P. J. Simpson, Z. Jenei, P. Asoka-Kumar, R. R. Robison, M. E. Law
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 1538–1540 (2004)
https://doi.org/10.1063/1.1784045
Published: August 2004
View article titled, Observation of fluorine-vacancy complexes in silicon
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Journal Articles

Proportionality of vacancy concentration to ion implantation fluence

P. J. Simpson, S. Szpala
Journal: Journal of Applied Physics
J. Appl. Phys. 92, 5852–5855 (2002)
https://doi.org/10.1063/1.1516265
Published: November 2002
View article titled, Proportionality of vacancy concentration to ion implantation fluence
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Journal Articles

Infrared spectroscopy of hydrogen in ZnO

M. D. McCluskey, S. J. Jokela, K. K. Zhuravlev, P. J. Simpson, K. G. Lynn
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 3807–3809 (2002)
https://doi.org/10.1063/1.1520703
Published: November 2002
View article titled, Infrared spectroscopy of hydrogen in ZnO
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Journal Articles

Experimental identification of nitrogen-vacancy complexes in nitrogen implanted silicon

Lahir Shaik Adam, Mark E. Law, Stanislaw Szpala, P. J. Simpson, Derek Lawther, Omer Dokumaci, Suri Hegde
Journal: Applied Physics Letters
Appl. Phys. Lett. 79, 623–625 (2001)
https://doi.org/10.1063/1.1388882
Published: July 2001
View article titled, Experimental identification of nitrogen-vacancy complexes in nitrogen implanted silicon
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Journal Articles

Charge states of divacancies in self-implanted doped Si

S. Szpala, P. J. Simpson
Journal: Journal of Applied Physics
J. Appl. Phys. 89, 5991–5996 (2001)
https://doi.org/10.1063/1.1363682
Published: June 2001
View article titled, Charge states of divacancies in self-implanted doped Si
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Journal Articles

Positron annihilation study of defects in boron implanted silicon

M. B. Huang, U. Myler, P. J. Simpson, I. V. Mitchell
Journal: Journal of Applied Physics
J. Appl. Phys. 87, 7685–7691 (2000)
https://doi.org/10.1063/1.373441
Published: June 2000
View article titled, Positron annihilation study of defects in boron implanted silicon
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Journal Articles

Comparison of the annealing characteristics of resistivity and vacancy defects for implant isolated n-type GaAs

A. P. Knights, S. Ruffell, P. J. Simpson
Journal: Journal of Applied Physics
J. Appl. Phys. 87, 663–667 (2000)
https://doi.org/10.1063/1.371923
Published: January 2000
View article titled, Comparison of the annealing characteristics of resistivity and vacancy defects for implant isolated <em>n</em>-type GaAs
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