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P. J. Parbrook
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Journal Articles

Exciton localization in semipolar ( 11 2 ¯ 2 ) InGaN multiple quantum wells

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Duc V. Dinh, F. Brunner, M. Weyers, B. Corbett, P. J. Parbrook
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 055705 (2016)
https://doi.org/10.1063/1.4960348
Published: August 2016
View articletitled, Exciton localization in semipolar ( 11 2 ¯ 2 ) InGaN multiple quantum wells
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Journal Articles

Modeling and simulation of bulk gallium nitride power semiconductor devices

Open Access
G. Sabui, P. J. Parbrook, M. Arredondo-Arechavala, Z. J. Shen
Journal: AIP Advances
AIP Advances 6, 055006 (2016)
https://doi.org/10.1063/1.4948794
Published: May 2016
View articletitled, Modeling and simulation of bulk gallium nitride power semiconductor devices
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Journal Articles

InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

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M. D. Smith, D. O'Mahony, M. Conroy, M. Schmidt, P. J. Parbrook
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 113506 (2015)
https://doi.org/10.1063/1.4930880
Published: September 2015
View articletitled, InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy
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Journal Articles

Comparative study of polar and semipolar ( 11 2 ¯ 2 ) InGaN layers grown by metalorganic vapour phase epitaxy

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Duc V. Dinh, F. Oehler, V. Z. Zubialevich, M. J. Kappers, S. N. Alam, M. Caliebe, F. Scholtz, C. J. Humphreys, P. J. Parbrook
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 153505 (2014)
https://doi.org/10.1063/1.4898569
Published: October 2014
View articletitled, Comparative study of polar and semipolar ( 11 2 ¯ 2 ) InGaN layers grown by metalorganic vapour phase epitaxy
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Journal Articles

Fabrication of p-type porous GaN on silicon and epitaxial GaN

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O. V. Bilousov, H. Geaney, J. J. Carvajal, V. Z. Zubialevich, P. J. Parbrook, A. Giguère, D. Drouin, F. Díaz, M. Aguiló, C. O'Dwyer
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 112103 (2013)
https://doi.org/10.1063/1.4821191
Published: September 2013
View articletitled, Fabrication of p-type porous GaN on silicon and epitaxial GaN
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Journal Articles

Crystal defect topography of Stranski–Krastanow quantum dots by atomic force microscopy

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K. Gradkowski, T. C. Sadler, L. O. Mereni, V. Dimastrodonato, P. J. Parbrook, G. Huyet, E. Pelucchi
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 191106 (2010)
https://doi.org/10.1063/1.3514237
Published: November 2010
View articletitled, Crystal defect topography of Stranski–Krastanow quantum dots by atomic force microscopy
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Journal Articles

Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl 4 / SF 6 dry etch recipe

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R. T. Green, I. J. Luxmoore, K. B. Lee, P. A. Houston, F. Ranalli, T. Wang, P. J. Parbrook, M. J. Uren, D. J. Wallis, T. Martin
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 013711 (2010)
https://doi.org/10.1063/1.3457356
Published: July 2010
View articletitled, Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl 4 / SF 6 dry etch recipe
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Journal Articles

Optical and microstructural studies of InGaN/GaN quantum dot ensembles

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S. C. Davies, D. J. Mowbray, F. Ranalli, P. J. Parbrook, Q. Wang, T. Wang, B. S. Yea, B. J. Sherliker, M. P. Halsall, R. J. Kashtiban, U. Bangert
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 111903 (2009)
https://doi.org/10.1063/1.3226645
Published: September 2009
View articletitled, Optical and microstructural studies of InGaN/GaN quantum dot ensembles
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Journal Articles

Optical and microstructural study of a single layer of InGaN quantum dots

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J. Bai, Q. Wang, T. Wang, A. G. Cullis, P. J. Parbrook
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 053505 (2009)
https://doi.org/10.1063/1.3079525
Published: March 2009
View articletitled, Optical and microstructural study of a single layer of InGaN quantum dots
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Journal Articles

Excitonic spin lifetimes in InGaN quantum wells and epilayers

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J. Brown, J.-P. R. Wells, D. O. Kundys, A. M. Fox, T. Wang, P. J. Parbrook, D. J. Mowbray, M. S. Skolnick
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 053523 (2008)
https://doi.org/10.1063/1.2976344
Published: September 2008
View articletitled, Excitonic spin lifetimes in InGaN quantum wells and epilayers
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Journal Articles

Influence of annealing temperature on optical properties of InGaN quantum dot based light emitting diodes

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Q. Wang, T. Wang, J. Bai, A. G. Cullis, P. J. Parbrook, F. Ranalli
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 081915 (2008)
https://doi.org/10.1063/1.2976324
Published: August 2008
View articletitled, Influence of annealing temperature on optical properties of InGaN quantum dot based light emitting diodes
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Journal Articles

Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer

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Q. Wang, T. Wang, J. Bai, A. G. Cullis, P. J. Parbrook, F. Ranalli
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 123522 (2008)
https://doi.org/10.1063/1.2939568
Published: June 2008
View articletitled, Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer
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Journal Articles

Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer

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J. Bai, T. Wang, P. J. Parbrook, Q. Wang, K. B. Lee, A. G. Cullis
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 131903 (2007)
https://doi.org/10.1063/1.2790813
Published: September 2007
View articletitled, Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer
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Journal Articles

Erratum: “Femtosecond studies of electron capture times in In Ga N ∕ Ga N multiple quantum wells” [Appl. Phys. Lett. 84, 3052 (2004)]

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W. H. Fan, S. M. Olaizola, J.-P. R. Wells, A. M. Fox, T. Wang, P. J. Parbrook, D. J. Mowbray, M. S. Skolnick
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 099901 (2007)
https://doi.org/10.1063/1.2778361
Published: August 2007
View articletitled, Erratum: “Femtosecond studies of electron capture times in In Ga N ∕ Ga N multiple quantum wells” [Appl. Phys. Lett. 84, 3052 (2004)]
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Journal Articles

The influence of a capping layer on optical properties of self-assembled InGaN quantum dots

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Q. Wang, T. Wang, P. J. Parbrook, J. Bai, A. G. Cullis
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 113520 (2007)
https://doi.org/10.1063/1.2737971
Published: June 2007
View articletitled, The influence of a capping layer on optical properties of self-assembled InGaN quantum dots
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Journal Articles

GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates

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A. Alyamani, D. Sanvitto, A. A. Khalifa, M. S. Skolnick, T. Wang, F. Ranalli, P. J. Parbrook, A. Tahraoui, R. Airey
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 093110 (2007)
https://doi.org/10.1063/1.2728744
Published: May 2007
View articletitled, GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates
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Journal Articles

Valence band offset of In N ∕ Al N heterojunctions measured by x-ray photoelectron spectroscopy

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P. D. C. King, T. D. Veal, P. H. Jefferson, C. F. McConville, T. Wang, P. J. Parbrook, Hai Lu, W. J. Schaff
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 132105 (2007)
https://doi.org/10.1063/1.2716994
Published: March 2007
View articletitled, Valence band offset of In N ∕ Al N heterojunctions measured by x-ray photoelectron spectroscopy
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Journal Articles

Optical investigation of exciton localization in Al x Ga 1 − x N

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K. B. Lee, P. J. Parbrook, T. Wang, F. Ranalli, T. Martin, R. S. Balmer, D. J. Wallis
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 053513 (2007)
https://doi.org/10.1063/1.2434991
Published: March 2007
View articletitled, Optical investigation of exciton localization in Al x Ga 1 − x N
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Journal Articles

Mechanisms of dislocation reduction in an Al 0.98 Ga 0.02 N layer grown using a porous AlN buffer

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J. Bai, T. Wang, P. J. Parbrook, A. G. Cullis
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 131925 (2006)
https://doi.org/10.1063/1.2358123
Published: September 2006
View articletitled, Mechanisms of dislocation reduction in an Al 0.98 Ga 0.02 N layer grown using a porous AlN buffer
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Journal Articles

Greatly improved performance of 340 nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer

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T. Wang, K. B. Lee, J. Bai, P. J. Parbrook, R. J. Airey, Q. Wang, G. Hill, F. Ranalli, A. G. Cullis
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 081126 (2006)
https://doi.org/10.1063/1.2338784
Published: August 2006
View articletitled, Greatly improved performance of 340 nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer
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