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Journal Articles

Experimental evidence of a ReRAM mechanism relying on operando nanometric depleted zone in V2O3 thin films

Open Access
K. Veyret, N. Bernier, R. Bon, G. Navarro, R. Hida, C. Carabasse, P. Gonon, E. Jalaguier
Journal: Journal of Applied Physics
J. Appl. Phys. 138, 015301 (2025)
https://doi.org/10.1063/5.0272554
Published: July 2025
View articletitled, Experimental evidence of a ReRAM mechanism relying on operando nanometric depleted zone in V2O3 thin films
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Journal Articles

Doped and undoped ferroelectric HfO2: Role of Gd-doping in stabilizing the ferroelectric phase

Open Access
L. Alrifai, E. V. Skopin, N. Guillaume, P. Gonon, A. Bsiesy
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 032901 (2023)
https://doi.org/10.1063/5.0151257
Published: July 2023
View articletitled, Doped and undoped ferroelectric HfO2: Role of Gd-doping in stabilizing the ferroelectric phase
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Journal Articles

Sub-10-nm ferroelectric Gd-doped HfO2 layers

Open Access
E. V. Skopin, N. Guillaume, L. Alrifai, P. Gonon, A. Bsiesy
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 172901 (2022)
https://doi.org/10.1063/5.0088505
Published: April 2022
View articletitled, Sub-10-nm ferroelectric Gd-doped HfO2 layers
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Journal Articles

Correlations between first-principles calculations and electric properties of HfO2:Al2O3 alloys for metal–insulator–metal (MIM) capacitor applications

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O. Khaldi, F. Jomni, P. Gonon
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 134101 (2020)
https://doi.org/10.1063/5.0025130
Published: October 2020
View articletitled, Correlations between first-principles calculations and electric properties of HfO2:Al2O3 alloys for metal–insulator–metal (MIM) capacitor applications
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Journal Articles

High capacitance density of 185 nF/mm2 achieved in three-dimensional MIM structures using TiO2 as a dielectric

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A. Chaker, P. Gonon, C. Vallée, A. Bsiesy
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 243501 (2017)
https://doi.org/10.1063/1.4986196
Published: June 2017
View articletitled, High capacitance density of 185 nF/mm2 achieved in three-dimensional MIM structures using TiO2 as a dielectric
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Journal Articles

Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source

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A. Chaker, P. D. Szkutnik, J. Pointet, P. Gonon, C. Vallée, A. Bsiesy
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 085315 (2016)
https://doi.org/10.1063/1.4960139
Published: August 2016
View articletitled, Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
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Journal Articles

Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique

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M. Kassmi, J. Pointet, P. Gonon, A. Bsiesy, C. Vallée, F. Jomni
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 244101 (2016)
https://doi.org/10.1063/1.4954314
Published: June 2016
View articletitled, Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
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Journal Articles

On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)

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M. Saadi, P. Gonon, C. Vallée, C. Mannequin, H. Grampeix, E. Jalaguier, F. Jomni, A. Bsiesy
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 114501 (2016)
https://doi.org/10.1063/1.4943776
Published: March 2016
View articletitled, On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)
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Journal Articles

From MEMRISTOR to MEMImpedance device

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T. Wakrim, C. Vallée, P. Gonon, C. Mannequin, A. Sylvestre
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 053502 (2016)
https://doi.org/10.1063/1.4941231
Published: February 2016
View articletitled, From MEMRISTOR to MEMImpedance device
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Journal Articles

Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction

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O. Khaldi, P. Gonon, C. Vallée, C. Mannequin, M. Kassmi, A. Sylvestre, F. Jomni
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 084104 (2014)
https://doi.org/10.1063/1.4893583
Published: August 2014
View articletitled, Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction
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Journal Articles

Stress-induced leakage current and trap generation in HfO2 thin films

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C. Mannequin, P. Gonon, C. Vallée, L. Latu-Romain, A. Bsiesy, H. Grampeix, A. Salaün, V. Jousseaume
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 074103 (2012)
https://doi.org/10.1063/1.4756993
Published: October 2012
View articletitled, Stress-induced leakage current and trap generation in HfO2 thin films
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Journal Articles

Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO2 metal-insulator-metal devices

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C. Mannequin, P. Gonon, C. Vallée, A. Bsiesy, H. Grampeix, V. Jousseaume
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 104108 (2011)
https://doi.org/10.1063/1.3662913
Published: November 2011
View articletitled, Dielectric relaxation in hafnium oxide: A study of transient currents and admittance spectroscopy in HfO2 metal-insulator-metal devices
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Journal Articles

Plasma treatment of HfO2-based metal–insulator–metal resistive memories

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C. Vallée, P. Gonon, C. Mannequin, T. Chevolleau, M. Bonvalot, H. Grampeix, C. Licitra, N. Rochat, V. Jousseaume
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 29, 041512 (2011)
https://doi.org/10.1116/1.3599825
Published: June 2011
View articletitled, Plasma treatment of HfO2-based metal–insulator–metal resistive memories
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Journal Articles

Voltage-induced recovery of dielectric breakdown (high current resistance switching) in HfO 2

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F. El Kamel, P. Gonon, C. Vallée, V. Jousseaume, H. Grampeix
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 023504 (2011)
https://doi.org/10.1063/1.3541961
Published: January 2011
View articletitled, Voltage-induced recovery of dielectric breakdown (high current resistance switching) in HfO 2
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Journal Articles

Crosslinking of porous SiOCH films involving Si–O–C bonds: Impact of deposition and curing

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O. Gourhant, G. Gerbaud, A. Zenasni, L. Favennec, P. Gonon, V. Jousseaume
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 124105 (2010)
https://doi.org/10.1063/1.3518512
Published: December 2010
View articletitled, Crosslinking of porous SiOCH films involving Si–O–C bonds: Impact of deposition and curing
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Journal Articles

Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors

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C. Vallée, P. Gonon, C. Jorel, F. El Kamel
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 233504 (2010)
https://doi.org/10.1063/1.3447795
Published: June 2010
View articletitled, Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors
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Journal Articles

Resistance switching of Cu / SiO 2 memory cells studied under voltage and current-driven modes

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Y. Bernard, P. Gonon, V. Jousseaume
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 193502 (2010)
https://doi.org/10.1063/1.3428779
Published: May 2010
View articletitled, Resistance switching of Cu / SiO 2 memory cells studied under voltage and current-driven modes
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Journal Articles

Resistance switching in HfO 2 metal-insulator-metal devices

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P. Gonon, M. Mougenot, C. Vallée, C. Jorel, V. Jousseaume, H. Grampeix, F. El Kamel
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 074507 (2010)
https://doi.org/10.1063/1.3357283
Published: April 2010
View articletitled, Resistance switching in HfO 2 metal-insulator-metal devices
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Journal Articles

Electrode effects on the conduction mechanisms in HfO 2 -based metal-insulator-metal capacitors

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F. El Kamel, P. Gonon, C. Vallée, C. Jorel
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 064508 (2009)
https://doi.org/10.1063/1.3226857
Published: September 2009
View articletitled, Electrode effects on the conduction mechanisms in HfO 2 -based metal-insulator-metal capacitors
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Journal Articles

High performance metal-insulator-metal capacitor using a SrTiO 3 / ZrO 2 bilayer

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C. Jorel, C. Vallée, P. Gonon, E. Gourvest, C. Dubarry, E. Defay
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 253502 (2009)
https://doi.org/10.1063/1.3158951
Published: June 2009
View articletitled, High performance metal-insulator-metal capacitor using a SrTiO 3 / ZrO 2 bilayer
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