Page 1 | Search Results | AIP Publishing

1-20 of 60

Sort by

Sort Order Select

Journal Articles

Optoelectronic properties of GaN epilayers in the region of yellow luminescence

C. Grazzi, H. P. Strunk, A. Castaldini, A. Cavallini, H. P. D. Schenk, P. Gibart

J. Appl. Phys. 100, 073711 (2006)

https://doi.org/10.1063/1.2356780

Published: October 2006

View article titled, Optoelectronic properties of GaN epilayers in the region of yellow luminescence

Journal Articles

Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques

T. Malinauskas, K. Jarašiūnas, S. Miasojedovas, S. Juršėnas, B. Beaumont, P. Gibart

Appl. Phys. Lett. 88, 202109 (2006)

https://doi.org/10.1063/1.2204651

Published: May 2006

View article titled, Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques

Journal Articles

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

D. Gogova, A. Kasic, H. Larsson, C. Hemmingsson, B. Monemar, F. Tuomisto, K. Saarinen, L. Dobos, B. Pécz, P. Gibart, B. Beaumont

J. Appl. Phys. 96, 799–806 (2004)

https://doi.org/10.1063/1.1753073

Published: July 2004

View article titled, Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Journal Articles

Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet

J. L. Pau, C. Rivera, E. Muñoz, E. Calleja, U. Schühle, E. Frayssinet, B. Beaumont, J. P. Faurie, P. Gibart

J. Appl. Phys. 95, 8275–8279 (2004)

https://doi.org/10.1063/1.1748855

Published: June 2004

View article titled, Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet

Journal Articles

Epitaxial lateral overgrowth of GaN on Si (111)

E. Feltin, B. Beaumont, P. Vennéguès, M. Vaille, P. Gibart, T. Riemann, J. Christen, L. Dobos, B. Pécz

J. Appl. Phys. 93, 182–185 (2003)

https://doi.org/10.1063/1.1516838

Published: January 2003

View article titled, Epitaxial lateral overgrowth of GaN on Si (111)

Journal Articles

Impact of the defects on the electrical and optical properties of AlGaN ultraviolet photodetectors

M. Hanzaz, A. Bouhdada, P. Gibart, F. Omnès

J. Appl. Phys. 92, 13–18 (2002)

https://doi.org/10.1063/1.1481211

Published: July 2002

View article titled, Impact of the defects on the electrical and optical properties of AlGaN ultraviolet photodetectors

Journal Articles

Interplay between GaN and AlN sublattices in wurtzite Al x Ga 1−x N alloys revealed by Raman spectroscopy

A. L. Alvarez, F. Calle, E. Monroy, J. L. Pau, M. A. Sanchez-Garcia, E. Calleja, E. Muñoz, F. Omnes, P. Gibart, P. R. Hageman

J. Appl. Phys. 92, 223–226 (2002)

https://doi.org/10.1063/1.1478788

Published: July 2002

View article titled, Interplay between GaN and AlN sublattices in wurtzite Al x Ga 1−x N alloys revealed by Raman spectroscopy

Journal Articles

Raman mapping, photoluminescence investigations, and finite element analysis of epitaxial lateral overgrown GaN on silicon substrates

M. Benyoucef, M. Kuball, B. Beaumont, P. Gibart

Appl. Phys. Lett. 80, 2275–2277 (2002)

https://doi.org/10.1063/1.1464664

Published: April 2002

View article titled, Raman mapping, photoluminescence investigations, and finite element analysis of epitaxial lateral overgrown GaN on silicon substrates

Journal Articles

Properties of a hole trap in n-type hexagonal GaN

P. Muret, A. Philippe, E. Monroy, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart

J. Appl. Phys. 91, 2998–3001 (2002)

https://doi.org/10.1063/1.1433935

Published: March 2002

View article titled, Properties of a hole trap in <em>n</em>-type hexagonal GaN

Journal Articles

In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

H. P. D. Schenk, P. de Mierry, P. Vennéguès, O. Tottereau, M. Laügt, M. Vaille, E. Feltin, B. Beaumont, P. Gibart, S. Fernández, F. Calle

Appl. Phys. Lett. 80, 174–176 (2002)

https://doi.org/10.1063/1.1430859

Published: January 2002

View article titled, <em>In situ</em> growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

Journal Articles

Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary

M. Benyoucef, M. Kuball, G. Hill, M. Wisnom, B. Beaumont, P. Gibart

Appl. Phys. Lett. 79, 4127–4129 (2001)

https://doi.org/10.1063/1.1426276

Published: December 2001

View article titled, Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary

Journal Articles

Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Eric Feltin, B. Beaumont, M. Laügt, P. de Mierry, P. Vennéguès, H. Lahrèche, M. Leroux, P. Gibart

Appl. Phys. Lett. 79, 3230–3232 (2001)

https://doi.org/10.1063/1.1415043

Published: November 2001

View article titled, Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Journal Articles

Raman mapping of epitaxial lateral overgrown GaN: Stress at the coalescence boundary

M. Kuball, M. Benyoucef, B. Beaumont, P. Gibart

J. Appl. Phys. 90, 3656–3658 (2001)

https://doi.org/10.1063/1.1400092

Published: October 2001

View article titled, Raman mapping of epitaxial lateral overgrown GaN: Stress at the coalescence boundary

Journal Articles

Quantum beats of free and bound excitons in GaN

K. Kyhm, R. A. Taylor, J. F. Ryan, T. Aoki, M. Kuwata-Gonokami, B. Beaumont, P. Gibart

Appl. Phys. Lett. 79, 1097–1099 (2001)

https://doi.org/10.1063/1.1391411

Published: August 2001

View article titled, Quantum beats of free and bound excitons in GaN

Journal Articles

Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate. Time evolution with low energy electron beam

S. Dassonneville, A. Amokrane, B. Sieber, J.-L. Farvacque, B. Beaumont, P. Gibart, J.-D. Ganiere, K. Leifer

J. Appl. Phys. 89, 7966–7972 (2001)

https://doi.org/10.1063/1.1373703

Published: June 2001

View article titled, Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate. Time evolution with low energy electron beam

Journal Articles

Characterization of electron-irradiated n- GaN

S. A. Goodman, F. D. Auret, M. J. Legodi, B. Beaumont, P. Gibart

Appl. Phys. Lett. 78, 3815–3817 (2001)

https://doi.org/10.1063/1.1379057

Published: June 2001

View article titled, Characterization of electron-irradiated n- GaN

Journal Articles

Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate: Spectroscopic characterization and dislocation contrasts

S. Dassonneville, A. Amokrane, B. Sieber, J.-L. Farvacque, B. Beaumont, P. Gibart

J. Appl. Phys. 89, 3736–3743 (2001)

https://doi.org/10.1063/1.1349864

Published: April 2001

View article titled, Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate: Spectroscopic characterization and dislocation contrasts

Journal Articles

Strain state in GaN epilayers from optical experiments

E. Deleporte, C. Guénaud, M. Voos, B. Beaumont, P. Gibart

J. Appl. Phys. 89, 1116–1119 (2001)

https://doi.org/10.1063/1.1329144

Published: January 2001

View article titled, Strain state in GaN epilayers from optical experiments

Journal Articles

Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films

M. Benaissa, P. Vennéguès, B. Beaumont, P. Gibart, W. Saikaly, A. Charai

Appl. Phys. Lett. 77, 2115–2117 (2000)

https://doi.org/10.1063/1.1313811

Published: October 2000

View article titled, Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films

Journal Articles

Analysis and modeling of Al x Ga 1−x N -based Schottky barrier photodiodes

E. Monroy, F. Calle, J. L. Pau, F. J. Sánchez, E. Muñoz, F. Omnès, B. Beaumont, P. Gibart

J. Appl. Phys. 88, 2081–2091 (2000)

https://doi.org/10.1063/1.1305838

Published: August 2000

View article titled, Analysis and modeling of Al x Ga 1−x N -based Schottky barrier photodiodes

NARROW

Topics

Optoelectronic properties of GaN epilayers in the region of yellow luminescence

Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet

Epitaxial lateral overgrowth of GaN on Si (111)

Impact of the defects on the electrical and optical properties of AlGaN ultraviolet photodetectors

Interplay between GaN and AlN sublattices in wurtzite Al x Ga 1−x N alloys revealed by Raman spectroscopy

Raman mapping, photoluminescence investigations, and finite element analysis of epitaxial lateral overgrown GaN on silicon substrates

Properties of a hole trap in n-type hexagonal GaN

In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary

Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Raman mapping of epitaxial lateral overgrown GaN: Stress at the coalescence boundary

Quantum beats of free and bound excitons in GaN

Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate. Time evolution with low energy electron beam

Characterization of electron-irradiated n- GaN

Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate: Spectroscopic characterization and dislocation contrasts

Strain state in GaN epilayers from optical experiments

Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films

Analysis and modeling of Al x Ga 1−x N -based Schottky barrier photodiodes

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only