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Journal Articles

Electrical spin injection into Si(001) through a SiO 2 tunnel barrier

C. H. Li, G. Kioseoglou, O. M. J. van ‘t Erve, P. E. Thompson, B. T. Jonker

Appl. Phys. Lett. 95, 172102 (2009)

https://doi.org/10.1063/1.3254228

Published: October 2009

View article titled, Electrical spin injection into Si(001) through a SiO 2 tunnel barrier

Journal Articles

Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation

Z. F. Di, Y. Q. Wang, M. Nastasi, G. Bisognin, M. Berti, P. E. Thompson

Appl. Phys. Lett. 94, 264102 (2009)

https://doi.org/10.1063/1.3167814

Published: July 2009

View article titled, Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation

Journal Articles

Electrical spin injection into Si: A comparison between Fe/Si Schottky and Fe / Al 2 O 3 tunnel contacts

G. Kioseoglou, A. T. Hanbicki, R. Goswami, O. M. J. van ‘t Erve, C. H. Li, G. Spanos, P. E. Thompson, B. T. Jonker

Appl. Phys. Lett. 94, 122106 (2009)

https://doi.org/10.1063/1.3099049

Published: March 2009

View article titled, Electrical spin injection into Si: A comparison between Fe/Si Schottky and Fe / Al 2 O 3 tunnel contacts

Journal Articles

Effect of temperature on layer separation by plasma hydrogenation

Z. F. Di, Y. Q. Wang, M. Nastasi, F. Rossi, L. Shao, P. E. Thompson

Appl. Phys. Lett. 93, 254104 (2008)

https://doi.org/10.1063/1.3054643

Published: December 2008

View article titled, Effect of temperature on layer separation by plasma hydrogenation

Journal Articles

High thermal stability of vacancy clusters formed in MeV Si-self-ion-implanted Si

Lin Shao, P. E. Thompson, Q. Y. Chen, K. B. Ma, J. R. Liu, Wei-Kan Chu

Appl. Phys. Lett. 93, 041908 (2008)

https://doi.org/10.1063/1.2963480

Published: July 2008

View article titled, High thermal stability of vacancy clusters formed in MeV Si-self-ion-implanted Si

Journal Articles

Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry

O. M. J. van ’t Erve, A. T. Hanbicki, M. Holub, C. H. Li, C. Awo-Affouda, P. E. Thompson, B. T. Jonker

Appl. Phys. Lett. 91, 212109 (2007)

https://doi.org/10.1063/1.2817747

Published: November 2007

View article titled, Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry

Journal Articles

Dislocation loops in silicon-germanium alloys: The source of interstitials

R. T. Crosby, K. S. Jones, M. E. Law, L. Radic, P. E. Thompson, J. Liu

Appl. Phys. Lett. 87, 192111 (2005)

https://doi.org/10.1063/1.2123389

Published: November 2005

View article titled, Dislocation loops in silicon-germanium alloys: The source of interstitials

Journal Articles

Optimized energy window of He beams for accurate determination of depth in channeling Rutherford backscattering spectrometry

Lin Shao, Y. Q. Wang, X. Zhang, C. J. Wetteland, M. Nastasi, P. E. Thompson, J. W. Mayer

Appl. Phys. Lett. 86, 221913 (2005)

https://doi.org/10.1063/1.1941454

Published: May 2005

View article titled, Optimized energy window of He beams for accurate determination of depth in channeling Rutherford backscattering spectrometry

Journal Articles

Weak localization thickness measurements of Si : P delta-layers

D. F. Sullivan, B. E. Kane, P. E. Thompson

Appl. Phys. Lett. 85, 6362–6364 (2004)

https://doi.org/10.1063/1.1842366

Published: December 2004

View article titled, Weak localization thickness measurements of Si : P delta-layers

Journal Articles

Radiation tolerance of Si/Si 0.6 Ge 0.4 resonant interband tunneling diodes

B. D. Weaver, P. E. Thompson, N. Jin, S.-Y. Chung, A. T. Rice, P. R. Berger

J. Appl. Phys. 95, 6406–6408 (2004)

https://doi.org/10.1063/1.1710719

Published: June 2004

View article titled, Radiation tolerance of Si/Si 0.6 Ge 0.4 resonant interband tunneling diodes

Journal Articles

Experimental study of the oxidation of silicon germanium alloys

S. J. Kilpatrick, R. J. Jaccodine, P. E. Thompson

J. Appl. Phys. 93, 4896–4901 (2003)

https://doi.org/10.1063/1.1559944

Published: April 2003

View article titled, Experimental study of the oxidation of silicon germanium alloys

Journal Articles

Formation and thermal stability of ultra-shallow p + junctions in Si and Si 1−x Ge x formed by molecular beam epitaxy

P. E. Thompson, J. Bennett

J. Appl. Phys. 92, 6845–6850 (2002)

https://doi.org/10.1063/1.1518766

Published: December 2002

View article titled, Formation and thermal stability of ultra-shallow p + junctions in Si and Si 1−x Ge x formed by molecular beam epitaxy

Journal Articles

“p-on-n” Si interband tunnel diode grown by molecular beam epitaxy

K. D. Hobart, P. E. Thompson, S. L. Rommel, T. E. Dillon, P. R. Berger, D. S. Simons, P. H. Chi

J. Vac. Sci. Technol. B 19, 290–293 (2001)

https://doi.org/10.1116/1.1339011

Published: January 2001

View article titled, “p-on-n” Si interband tunnel diode grown by molecular beam epitaxy

Journal Articles

Changes in morphology using atomic hydrogen during Si/Si 1−x Ge x molecular beam epitaxy growth on Si (100)

C. Silvestre, G. G. Jernigan, M. E. Twigg, P. E. Thompson

J. Vac. Sci. Technol. B 16, 1933–1936 (1998)

https://doi.org/10.1116/1.590110

Published: July 1998

View article titled, Changes in morphology using atomic hydrogen during Si/Si 1−x Ge x molecular beam epitaxy growth on Si (100)

Journal Articles

A diffusional model for the oxidation behavior of Si 1−x Ge x alloys

S. J. Kilpatrick, R. J. Jaccodine, P. E. Thompson

J. Appl. Phys. 81, 8018–8028 (1997)

https://doi.org/10.1063/1.365406

Published: June 1997

View article titled, A diffusional model for the oxidation behavior of Si 1−x Ge x alloys

Journal Articles

Effect of Ge on the segregation of B in Si(100) and Si(110)

P. E. Thompson, C. Silvestre, G. Jernigan, K. Hobart, D. S. Simons, M. R. Gregg

J. Appl. Phys. 81, 7317–7319 (1997)

https://doi.org/10.1063/1.365359

Published: June 1997

View article titled, Effect of Ge on the segregation of B in Si(100) and Si(110)

Journal Articles

Surface segregation of arsenic and phosphorus from buried layers during Si molecular beam epitaxy

K. D. Hobart, F. J. Kub, G. G. Jernigan, P. E. Thompson

J. Vac. Sci. Technol. B 14, 2229–2232 (1996)

https://doi.org/10.1116/1.588906

Published: May 1996

View article titled, Surface segregation of arsenic and phosphorus from buried layers during Si molecular beam epitaxy

Journal Articles

Effect of dry etching and subsequent annealing of Si/SiGe/Si heterostructure

P. K. Swain, D. Misra, P. E. Thompson

J. Appl. Phys. 79, 4402–4406 (1996)

https://doi.org/10.1063/1.361748

Published: April 1996

View article titled, Effect of dry etching and subsequent annealing of Si/SiGe/Si heterostructure

Journal Articles

B implants in Si_1−xGe_x/Si

Alok K. Berry, P. E. Thompson, Mulpuri V. Rao, M. Fatemi, H. B. Dietrich

Appl. Phys. Lett. 68, 391–393 (1996)

https://doi.org/10.1063/1.116695

Published: January 1996

View article titled, B implants in Si1−xGex/Si

Journal Articles

Thermal stress‐induced, high‐strain fragmentation of buried SiGe layers grown on Si

M. Fatemi, P. E. Thompson, M. E. Twigg

Appl. Phys. Lett. 67, 2678–2680 (1995)

https://doi.org/10.1063/1.114290

Published: October 1995

View article titled, Thermal stress‐induced, high‐strain fragmentation of buried SiGe layers grown on Si

NARROW

Topics

Electrical spin injection into Si(001) through a SiO 2 tunnel barrier

Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation

Electrical spin injection into Si: A comparison between Fe/Si Schottky and Fe / Al 2 O 3 tunnel contacts

Effect of temperature on layer separation by plasma hydrogenation

High thermal stability of vacancy clusters formed in MeV Si-self-ion-implanted Si

Electrical injection and detection of spin-polarized carriers in silicon in a lateral transport geometry

Dislocation loops in silicon-germanium alloys: The source of interstitials

Optimized energy window of He beams for accurate determination of depth in channeling Rutherford backscattering spectrometry

Weak localization thickness measurements of Si : P delta-layers

Radiation tolerance of Si/Si 0.6 Ge 0.4 resonant interband tunneling diodes

Experimental study of the oxidation of silicon germanium alloys

Formation and thermal stability of ultra-shallow p + junctions in Si and Si 1−x Ge x formed by molecular beam epitaxy

“p-on-n” Si interband tunnel diode grown by molecular beam epitaxy

Changes in morphology using atomic hydrogen during Si/Si 1−x Ge x molecular beam epitaxy growth on Si (100)

A diffusional model for the oxidation behavior of Si 1−x Ge x alloys

Effect of Ge on the segregation of B in Si(100) and Si(110)

Surface segregation of arsenic and phosphorus from buried layers during Si molecular beam epitaxy

Effect of dry etching and subsequent annealing of Si/SiGe/Si heterostructure

B implants in Si_1−xGe_x/Si

Thermal stress‐induced, high‐strain fragmentation of buried SiGe layers grown on Si

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