1-20 of 67
P. Desjardins
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Impact of applied biaxial stress on the piezoelectric, elastic, and dielectric properties of scandium aluminum nitride alloys determined by density functional perturbation theory

P. Daoust, Michel Côté, P. Desjardins, R. A. Masut
Journal: AIP Advances
AIP Advances 11, 095017 (2021)
https://doi.org/10.1063/5.0065744
Published: September 2021
View article titled, Impact of applied biaxial stress on the piezoelectric, elastic, and dielectric properties of scandium aluminum nitride alloys determined by density functional perturbation theory
Open the PDF for Impact of applied biaxial stress on the piezoelectric, elastic, and dielectric properties of scandium aluminum nitride alloys determined by density functional perturbation theory in another window
Includes: Supplementary data
Journal Articles

Erratum: “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys” [Appl. Phys. Lett. 103 , 263103 (2013)]

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, O. Moutanabbir
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 179901 (2015)
https://doi.org/10.1063/1.4919130
Published: April 2015
View article titled, Erratum: “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys” [Appl. Phys. Lett. 103 , 263103 (2013)]
Open the PDF for Erratum: “Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys” [Appl. Phys. Lett. 103 , 263103 (2013)] in another window
Journal Articles

Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys

J.-H. Fournier-Lupien, S. Mukherjee, S. Wirths, E. Pippel, N. Hayazawa, G. Mussler, J. M. Hartmann, P. Desjardins, D. Buca, O. Moutanabbir
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 263103 (2013)
https://doi.org/10.1063/1.4855436
Published: December 2013
View article titled, Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys
Open the PDF for Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys in another window
Journal Articles

The thermally-induced reaction of thin Ni films with Si: Effect of the substrate orientation

S. Gaudet, P. Desjardins, C. Lavoie
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 113524 (2011)
https://doi.org/10.1063/1.3662110
Published: December 2011
View article titled, The thermally-induced reaction of thin Ni films with Si: Effect of the substrate orientation
Open the PDF for The thermally-induced reaction of thin Ni films with Si: Effect of the substrate orientation in another window
Includes: Supplementary data
Journal Articles

Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy

K. A. Bratland, T. Spila, D. G. Cahill, J. E. Greene, P. Desjardins
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 063513 (2011)
https://doi.org/10.1063/1.3556745
Published: March 2011
View article titled, Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy
Open the PDF for Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy in another window
Journal Articles

Metastable phase formation during the reaction of Ni films with Si(001): The role of texture inheritance

S. Gaudet, C. Coia, P. Desjardins, C. Lavoie
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 093515 (2010)
https://doi.org/10.1063/1.3327451
Published: May 2010
View article titled, Metastable phase formation during the reaction of Ni films with Si(001): The role of texture inheritance
Open the PDF for Metastable phase formation during the reaction of Ni films with Si(001): The role of texture inheritance in another window
Journal Articles

Experimental investigation of the variation of the absorption coefficient with nitrogen content in GaAsN and GaInAsN grown on GaAs (001)

S. Turcotte, J.-N. Beaudry, R. A. Masut, P. Desjardins, G. Bentoumi, R. Leonelli
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 083511 (2008)
https://doi.org/10.1063/1.3000451
Published: October 2008
View article titled, Experimental investigation of the variation of the absorption coefficient with nitrogen content in GaAsN and GaInAsN grown on GaAs (001)
Open the PDF for Experimental investigation of the variation of the absorption coefficient with nitrogen content in GaAsN and GaInAsN grown on GaAs (001) in another window
Journal Articles

Metal-organic vapor phase epitaxy of crystallographically oriented MnP magnetic nanoclusters embedded in GaP(001)

S. Lambert-Milot, C. Lacroix, D. Ménard, R. A. Masut, P. Desjardins, M. Garcia-Hernandez, A. de Andres
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 083501 (2008)
https://doi.org/10.1063/1.2992558
Published: October 2008
View article titled, Metal-organic vapor phase epitaxy of crystallographically oriented MnP magnetic nanoclusters embedded in GaP(001)
Open the PDF for Metal-organic vapor phase epitaxy of crystallographically oriented MnP magnetic nanoclusters embedded in GaP(001) in another window
Journal Articles

Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation

C. Dion, P. Desjardins, F. Schiettekatte, M. Chicoine, M. D. Robertson, N. Shtinkov, P. J. Poole, X. Wu, S. Raymond
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 043527 (2008)
https://doi.org/10.1063/1.2970093
Published: August 2008
View article titled, Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation
Open the PDF for Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation in another window
Journal Articles

Effects of grown-in defects on interdiffusion dynamics in In As ∕ In P ( 001 ) quantum dots subjected to rapid thermal annealing

C. Dion, P. Desjardins, N. Shtinkov, F. Schiettekatte, P. J. Poole, S. Raymond
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 083526 (2008)
https://doi.org/10.1063/1.2905317
Published: April 2008
View article titled, Effects of grown-in defects on interdiffusion dynamics in In As ∕ In P ( 001 ) quantum dots subjected to rapid thermal annealing
Open the PDF for Effects of grown-in defects on interdiffusion dynamics in In As ∕ In P ( 001 ) quantum dots subjected to rapid thermal annealing in another window
Journal Articles

Low-temperature emission in dilute GaAsN alloys grown by metalorganic vapor phase epitaxy

G. Bentoumi, Z. Yaïche, R. Leonelli, J.-N. Beaudry, P. Desjardins, R. A. Masut
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 063526 (2008)
https://doi.org/10.1063/1.2901141
Published: March 2008
View article titled, Low-temperature emission in dilute GaAsN alloys grown by metalorganic vapor phase epitaxy
Open the PDF for Low-temperature emission in dilute GaAsN alloys grown by metalorganic vapor phase epitaxy in another window
Journal Articles

Compositional dependence of the elastic constants of dilute GaAs 1 − x N x alloys

J.-N. Beaudry, N. Shtinkov, R. A. Masut, P. Desjardins, R. J. Jiménez Riobóo
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 113507 (2007)
https://doi.org/10.1063/1.2736340
Published: June 2007
View article titled, Compositional dependence of the elastic constants of dilute GaAs 1 − x N x alloys
Open the PDF for Compositional dependence of the elastic constants of dilute GaAs 1 − x N x alloys in another window
Journal Articles

Interface broadening due to ion mixing during thin film growth at the radio-frequency-biased electrode in a plasma-enhanced chemical vapor deposition environment

A. Amassian, M. Svec, P. Desjardins, L. Martinu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 2061–2069 (2006)
https://doi.org/10.1116/1.2348642
Published: October 2006
View article titled, Interface broadening due to ion mixing during thin film growth at the radio-frequency-biased electrode in a plasma-enhanced chemical vapor deposition environment
Open the PDF for Interface broadening due to ion mixing during thin film growth at the radio-frequency-biased electrode in a plasma-enhanced chemical vapor deposition environment in another window
Journal Articles

Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: In situ spectroscopic ellipsometry and Monte Carlo study

A. Amassian, M. Svec, P. Desjardins, L. Martinu
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 063526 (2006)
https://doi.org/10.1063/1.2337260
Published: September 2006
View article titled, Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: <em>In situ</em> spectroscopic ellipsometry and Monte Carlo study
Open the PDF for Dynamics of ion bombardment-induced modifications of Si(001) at the radio-frequency-biased electrode in low-pressure oxygen plasmas: <em>In situ</em> spectroscopic ellipsometry and Monte Carlo study in another window
Journal Articles

Tuning of the electronic properties of self-assembled In As ∕ In P ( 001 ) quantum dots using grown-in defect mediated intermixing

C. Dion, P. J. Poole, S. Raymond, P. Desjardins, F. Schiettekatte
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 131905 (2006)
https://doi.org/10.1063/1.2357162
Published: September 2006
View article titled, Tuning of the electronic properties of self-assembled In As ∕ In P ( 001 ) quantum dots using grown-in defect mediated intermixing
Open the PDF for Tuning of the electronic properties of self-assembled In As ∕ In P ( 001 ) quantum dots using grown-in defect mediated intermixing in another window
Journal Articles

Reaction of thin Ni films with Ge: Phase formation and texture

S. Gaudet, C. Detavernier, C. Lavoie, P. Desjardins
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 034306 (2006)
https://doi.org/10.1063/1.2219080
Published: August 2006
View article titled, Reaction of thin Ni films with Ge: Phase formation and texture
Open the PDF for Reaction of thin Ni films with Ge: Phase formation and texture in another window
Journal Articles

Carbon nanotube sheets as electrodes in organic light-emitting diodes

C. M. Aguirre, S. Auvray, S. Pigeon, R. Izquierdo, P. Desjardins, R. Martel
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 183104 (2006)
https://doi.org/10.1063/1.2199461
Published: May 2006
View article titled, Carbon nanotube sheets as electrodes in organic light-emitting diodes
Open the PDF for Carbon nanotube sheets as electrodes in organic light-emitting diodes in another window
Journal Articles

Thin film reaction of transition metals with germanium

S. Gaudet, C. Detavernier, A. J. Kellock, P. Desjardins, C. Lavoie
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 474–485 (2006)
https://doi.org/10.1116/1.2191861
Published: April 2006
View article titled, Thin film reaction of transition metals with germanium
Open the PDF for Thin film reaction of transition metals with germanium in another window
Journal Articles

Ion-surface interactions on c - Si ( 001 ) at the radiofrequency-powered electrode in low-pressure plasmas: Ex situ spectroscopic ellipsometry and Monte Carlo simulation study

A. Amassian, P. Desjardins, L. Martinu
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 24, 45–54 (2006)
https://doi.org/10.1116/1.2134709
Published: December 2005
View article titled, Ion-surface interactions on c - Si ( 001 ) at the radiofrequency-powered electrode in low-pressure plasmas: <em>Ex situ</em> spectroscopic ellipsometry and Monte Carlo simulation study
Open the PDF for Ion-surface interactions on c - Si ( 001 ) at the radiofrequency-powered electrode in low-pressure plasmas: <em>Ex situ</em> spectroscopic ellipsometry and Monte Carlo simulation study in another window
Journal Articles

Localized and extended states in semiconductor quantum wells with wire‐like interface islands

N. Shtinkov, P. Desjardins, R. A. Masut
Journal: AIP Conference Proceedings
AIP Conf. Proc. 772, 953–954 (2005)
https://doi.org/10.1063/1.1994424
Published: June 2005
View article titled, Localized and extended states in semiconductor quantum wells with wire‐like interface islands
Open the PDF for Localized and extended states in semiconductor quantum wells with wire‐like interface islands in another window