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Oliver Brandt
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Journal Articles

Optical properties of ScN layers grown on Al2O3(0001) by plasma-assisted molecular beam epitaxy

Duc V. Dinh, Frank Peiris, Jonas Lähnemann, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 112102 (2023)
https://doi.org/10.1063/5.0164058
Published: September 2023
View article titled, Optical properties of ScN layers grown on Al<sub>2</sub>O<sub>3</sub>(0001) by plasma-assisted molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

Erratum: “Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources” [APL Mater. 9, 111110 (2021)]

Georg Hoffmann, Zongzhe Cheng, Oliver Brandt, Oliver Bierwagen
Journal: APL Materials
APL Mater. 11, 089901 (2023)
https://doi.org/10.1063/5.0164609
Published: August 2023
View article titled, Erratum: “Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources” [APL Mater. 9, 111110 (2021)]
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Journal Articles

Lattice parameters of ScxAl1−xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

Duc V. Dinh, Jonas Lähnemann, Lutz Geelhaar, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 152103 (2023)
https://doi.org/10.1063/5.0137873
Published: April 2023
View article titled, Lattice parameters of Sc<sub><em>x</em></sub>Al<sub>1−<em>x</em></sub>N layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources

Georg Hoffmann, Zongzhe Cheng, Oliver Brandt, Oliver Bierwagen
Journal: APL Materials
APL Mater. 9, 111110 (2021)
https://doi.org/10.1063/5.0058541
Published: November 2021
View article titled, Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources
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Journal Articles

Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}

Vladimir M. Kaganer, Karl K. Sabelfeld, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 122101 (2018)
https://doi.org/10.1063/1.5022170
Published: March 2018
View article titled, Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}
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Journal Articles

Erratum: “Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil” [Appl. Phys. Lett. 108 , 202101 (2016)]

Gabriele Calabrese, Pierre Corfdir, Guanhui Gao, Carsten Pfüller, Achim Trampert, Oliver Brandt, Lutz Geelhaar, Sergio Fernández-Garrido
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 219901 (2017)
https://doi.org/10.1063/1.5011853
Published: November 2017
View article titled, Erratum: “Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil” [Appl. Phys. Lett. 108 , 202101 (2016)]
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Journal Articles

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

Jesús Zúñiga-Pérez, Vincent Consonni, Liverios Lymperakis, Xiang Kong, Achim Trampert, Sergio Fernández-Garrido, Oliver Brandt, Hubert Renevier, Stacia Keller, Karine Hestroffer, Markus R. Wagner, Juan Sebastián Reparaz, Fatih Akyol, Siddharth Rajan, Stéphanie Rennesson, Tomás Palacios, Guy Feuillet
Journal: Applied Physics Reviews
Appl. Phys. Rev. 3, 041303 (2016)
https://doi.org/10.1063/1.4963919
Published: November 2016
View article titled, Polarity in GaN and ZnO: Theory, measurement, growth, and devices
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Journal Articles

Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

Gabriele Calabrese, Pierre Corfdir, Guanhui Gao, Carsten Pfüller, Achim Trampert, Oliver Brandt, Lutz Geelhaar, Sergio Fernández-Garrido
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 202101 (2016)
https://doi.org/10.1063/1.4950707
Published: May 2016
View article titled, Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil
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Journal Articles

Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires

Thilo Krause, Michael Hanke, Oliver Brandt, Achim Trampert
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 032103 (2016)
https://doi.org/10.1063/1.4940053
Published: January 2016
View article titled, Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires
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Journal Articles

Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

Caroline Chèze, Marcin Siekacz, Grzegorz Muzioł, Henryk Turski, Szymon Grzanka, Marcin Kryśko, Jan L. Weyher, Michał Boćkowski, Christian Hauswald, Jonas Lähnemann, Oliver Brandt, Martin Albrecht, Czesław Skierbiszewski
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 03C130 (2013)
https://doi.org/10.1116/1.4802964
Published: April 2013
View article titled, Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells
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Journal Articles

Observation of the electron-accumulation layer at the surface of InN by cross-sectional micro-Raman spectroscopy

YongJin Cho, Manfred Ramsteiner, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 072101 (2013)
https://doi.org/10.1063/1.4792837
Published: February 2013
View article titled, Observation of the electron-accumulation layer at the surface of InN by cross-sectional micro-Raman spectroscopy
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Journal Articles

Growth of wurtzite InN on bulk In2O3(111) wafers

Sergey Sadofev, YongJin Cho, Oliver Brandt, Manfred Ramsteiner, Raffaella Calarco, Henning Riechert, Steven C. Erwin, Zbigniew Galazka, Maxym Korytov, Martin Albrecht, Reinhard Uecker, Roberto Fornari
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 172102 (2012)
https://doi.org/10.1063/1.4761985
Published: October 2012
View article titled, Growth of wurtzite InN on bulk In<sub>2</sub>O<sub>3</sub>(111) wafers
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Journal Articles

Effects of Ga on the growth of InN on O-face ZnO ( 000 1 ¯ ) by plasma-assisted molecular beam epitaxy

YongJin Cho, Maxim Korytov, Martin Albrecht, Henning Riechert, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 052103 (2012)
https://doi.org/10.1063/1.4739941
Published: July 2012
View article titled, Effects of Ga on the growth of InN on O-face ZnO ( 000 1 ¯ ) by plasma-assisted molecular beam epitaxy
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Journal Articles

Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts

Sergio Fernández-Garrido, Kai U. Ubben, Jens Herfort, Cunxu Gao, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 032404 (2012)
https://doi.org/10.1063/1.4737905
Published: July 2012
View article titled, Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts
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Journal Articles

Structural properties of InN films grown on O-face ZnO ( 000 1 ¯ ) by plasma-assisted molecular beam epitaxy

YongJin Cho, Oliver Brandt, Maxim Korytov, Martin Albrecht, Vladimir M. Kaganer, Manfred Ramsteiner, Henning Riechert
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 152105 (2012)
https://doi.org/10.1063/1.3702572
Published: April 2012
View article titled, Structural properties of InN films grown on O-face ZnO ( 000 1 ¯ ) by plasma-assisted molecular beam epitaxy
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Journal Articles

Reflection high-energy electron diffraction ϕ scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy

Cunxu Gao, Hans-Peter Schönherr, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 031906 (2010)
https://doi.org/10.1063/1.3467136
Published: July 2010
View article titled, Reflection high-energy electron diffraction ϕ scans for <em>in situ</em> monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy
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Journal Articles

Thermal stability of epitaxial Fe films on GaN(0001)

Cunxu Gao, Oliver Brandt, Hans-Peter Schönherr, Uwe Jahn, Jens Herfort, Bernd Jenichen
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 111906 (2009)
https://doi.org/10.1063/1.3230004
Published: September 2009
View article titled, Thermal stability of epitaxial Fe films on GaN(0001)
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Journal Articles

Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells

Fumitaro Ishikawa, Álvaro Guzmán, Oliver Brandt, Achim Trampert, Klaus H. Ploog
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 113502 (2008)
https://doi.org/10.1063/1.3031652
Published: December 2008
View article titled, Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells
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Journal Articles

Intrinsic photoluminescence of M -plane GaN films on Li Al O 2 substrates

Carlos Rivera, Pranob Misra, José Luis Pau, Elías Muñoz, Oliver Brandt, Holger T. Grahn, Klaus H. Ploog
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 053527 (2007)
https://doi.org/10.1063/1.2710355
Published: March 2007
View article titled, Intrinsic photoluminescence of M -plane GaN films on Li Al O 2 substrates
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Journal Articles

Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy

Pranob Misra, Udo Behn, Oliver Brandt, Holger T. Grahn, Bilge Imer, Shuji Nakamura, Steven P. DenBaars, James S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 161920 (2006)
https://doi.org/10.1063/1.2198086
Published: April 2006
View article titled, Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
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