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Journal Articles

Crack-free ScxAl1−xN(000 1 ̄ ) layers grown on Si(111) by plasma-assisted molecular beam epitaxy

Open Access
Duc V. Dinh, Zhuohui Chen, Oliver Brandt
Journal: APL Materials
APL Mater. 13, 031104 (2025)
https://doi.org/10.1063/5.0250408
Published: March 2025
View articletitled, Crack-free ScxAl1−xN(000 1 ̄ ) layers grown on Si(111) by plasma-assisted molecular beam epitaxy
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Journal Articles

Detection of an unintentional Si doping gradient in site-controlled GaN nanowires grown using a Si3N4 mask by spatially resolved cathodoluminescence and Raman spectroscopy

Open Access
Mikel Gómez Ruiz, Matt D. Brubaker, Kris A. Bertness, Alexana Roshko, Hans Tornatzky, Manfred Ramsteiner, Oliver Brandt, Jonas Lähnemann
Journal: APL Materials
APL Mater. 12, 101123 (2024)
https://doi.org/10.1063/5.0233859
Published: October 2024
View articletitled, Detection of an unintentional Si doping gradient in site-controlled GaN nanowires grown using a Si3N4 mask by spatially resolved cathodoluminescence and Raman spectroscopy
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Journal Articles

Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy

Open Access
David van Treeck, Jonas Lähnemann, Guanhui Gao, Sergio Fernández Garrido, Oliver Brandt, Lutz Geelhaar
Journal: APL Materials
APL Mater. 11, 091120 (2023)
https://doi.org/10.1063/5.0168786
Published: September 2023
View articletitled, Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

Optical properties of ScN layers grown on Al2O3(0001) by plasma-assisted molecular beam epitaxy

Open Access
Duc V. Dinh, Frank Peiris, Jonas Lähnemann, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 123, 112102 (2023)
https://doi.org/10.1063/5.0164058
Published: September 2023
View articletitled, Optical properties of ScN layers grown on Al2O3(0001) by plasma-assisted molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

Erratum: “Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources” [APL Mater. 9, 111110 (2021)]

Free
Georg Hoffmann, Zongzhe Cheng, Oliver Brandt, Oliver Bierwagen
Journal: APL Materials
APL Mater. 11, 089901 (2023)
https://doi.org/10.1063/5.0164609
Published: August 2023
View articletitled, Erratum: “Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources” [APL Mater. 9, 111110 (2021)]
Open the PDF for Erratum: “Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources” [APL Mater. 9, 111110 (2021)] in another window
Journal Articles

Lattice parameters of ScxAl1−xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy

Open Access
Duc V. Dinh, Jonas Lähnemann, Lutz Geelhaar, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 152103 (2023)
https://doi.org/10.1063/5.0137873
Published: April 2023
View articletitled, Lattice parameters of ScxAl1−xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources

Open Access
Georg Hoffmann, Zongzhe Cheng, Oliver Brandt, Oliver Bierwagen
Journal: APL Materials
APL Mater. 9, 111110 (2021)
https://doi.org/10.1063/5.0058541
Published: November 2021
View articletitled, Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources
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Journal Articles

Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}

Available to Purchase
Vladimir M. Kaganer, Karl K. Sabelfeld, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 122101 (2018)
https://doi.org/10.1063/1.5022170
Published: March 2018
View articletitled, Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}
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Journal Articles

Erratum: “Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil” [Appl. Phys. Lett. 108 , 202101 (2016)]

Free
Gabriele Calabrese, Pierre Corfdir, Guanhui Gao, Carsten Pfüller, Achim Trampert, Oliver Brandt, Lutz Geelhaar, Sergio Fernández-Garrido
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 219901 (2017)
https://doi.org/10.1063/1.5011853
Published: November 2017
View articletitled, Erratum: “Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil” [Appl. Phys. Lett. 108 , 202101 (2016)]
Open the PDF for Erratum: “Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil” [Appl. Phys. Lett. 108 , 202101 (2016)] in another window
Journal Articles

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

Available to Purchase
Jesús Zúñiga-Pérez, Vincent Consonni, Liverios Lymperakis, Xiang Kong, Achim Trampert, Sergio Fernández-Garrido, Oliver Brandt, Hubert Renevier, Stacia Keller, Karine Hestroffer, Markus R. Wagner, Juan Sebastián Reparaz, Fatih Akyol, Siddharth Rajan, Stéphanie Rennesson, Tomás Palacios, Guy Feuillet
Journal: Applied Physics Reviews
Appl. Phys. Rev. 3, 041303 (2016)
https://doi.org/10.1063/1.4963919
Published: November 2016
View articletitled, Polarity in GaN and ZnO: Theory, measurement, growth, and devices
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Journal Articles

Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

Available to Purchase
Gabriele Calabrese, Pierre Corfdir, Guanhui Gao, Carsten Pfüller, Achim Trampert, Oliver Brandt, Lutz Geelhaar, Sergio Fernández-Garrido
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 202101 (2016)
https://doi.org/10.1063/1.4950707
Published: May 2016
View articletitled, Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil
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Journal Articles

Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires

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Thilo Krause, Michael Hanke, Oliver Brandt, Achim Trampert
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 032103 (2016)
https://doi.org/10.1063/1.4940053
Published: January 2016
View articletitled, Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires
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Journal Articles

Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

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Caroline Chèze, Marcin Siekacz, Grzegorz Muzioł, Henryk Turski, Szymon Grzanka, Marcin Kryśko, Jan L. Weyher, Michał Boćkowski, Christian Hauswald, Jonas Lähnemann, Oliver Brandt, Martin Albrecht, Czesław Skierbiszewski
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 31, 03C130 (2013)
https://doi.org/10.1116/1.4802964
Published: April 2013
View articletitled, Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells
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Journal Articles

Observation of the electron-accumulation layer at the surface of InN by cross-sectional micro-Raman spectroscopy

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YongJin Cho, Manfred Ramsteiner, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 072101 (2013)
https://doi.org/10.1063/1.4792837
Published: February 2013
View articletitled, Observation of the electron-accumulation layer at the surface of InN by cross-sectional micro-Raman spectroscopy
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Journal Articles

Growth of wurtzite InN on bulk In2O3(111) wafers

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Sergey Sadofev, YongJin Cho, Oliver Brandt, Manfred Ramsteiner, Raffaella Calarco, Henning Riechert, Steven C. Erwin, Zbigniew Galazka, Maxym Korytov, Martin Albrecht, Reinhard Uecker, Roberto Fornari
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 172102 (2012)
https://doi.org/10.1063/1.4761985
Published: October 2012
View articletitled, Growth of wurtzite InN on bulk In2O3(111) wafers
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Journal Articles

Effects of Ga on the growth of InN on O-face ZnO ( 000 1 ¯ ) by plasma-assisted molecular beam epitaxy

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YongJin Cho, Maxim Korytov, Martin Albrecht, Henning Riechert, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 052103 (2012)
https://doi.org/10.1063/1.4739941
Published: July 2012
View articletitled, Effects of Ga on the growth of InN on O-face ZnO ( 000 1 ¯ ) by plasma-assisted molecular beam epitaxy
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Journal Articles

Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts

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Sergio Fernández-Garrido, Kai U. Ubben, Jens Herfort, Cunxu Gao, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 032404 (2012)
https://doi.org/10.1063/1.4737905
Published: July 2012
View articletitled, Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts
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Journal Articles

Structural properties of InN films grown on O-face ZnO ( 000 1 ¯ ) by plasma-assisted molecular beam epitaxy

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YongJin Cho, Oliver Brandt, Maxim Korytov, Martin Albrecht, Vladimir M. Kaganer, Manfred Ramsteiner, Henning Riechert
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 152105 (2012)
https://doi.org/10.1063/1.3702572
Published: April 2012
View articletitled, Structural properties of InN films grown on O-face ZnO ( 000 1 ¯ ) by plasma-assisted molecular beam epitaxy
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Journal Articles

Reflection high-energy electron diffraction ϕ scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy

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Cunxu Gao, Hans-Peter Schönherr, Oliver Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 031906 (2010)
https://doi.org/10.1063/1.3467136
Published: July 2010
View articletitled, Reflection high-energy electron diffraction ϕ scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy
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Journal Articles

Thermal stability of epitaxial Fe films on GaN(0001)

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Cunxu Gao, Oliver Brandt, Hans-Peter Schönherr, Uwe Jahn, Jens Herfort, Bernd Jenichen
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 111906 (2009)
https://doi.org/10.1063/1.3230004
Published: September 2009
View articletitled, Thermal stability of epitaxial Fe films on GaN(0001)
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