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1-20 of 39
Oliver Brandt
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Journal Articles
Crack-free ScxAl1−xN(000 1 ̄ ) layers grown on Si(111) by plasma-assisted molecular beam epitaxy
Open Access
Journal:
APL Materials
APL Mater. 13, 031104 (2025)
Published: March 2025
Journal Articles
Mikel Gómez Ruiz, Matt D. Brubaker, Kris A. Bertness, Alexana Roshko, Hans Tornatzky, Manfred Ramsteiner, Oliver Brandt, Jonas Lähnemann
Journal:
APL Materials
APL Mater. 12, 101123 (2024)
Published: October 2024
Journal Articles
Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy
Open AccessDavid van Treeck, Jonas Lähnemann, Guanhui Gao, Sergio Fernández Garrido, Oliver Brandt, Lutz Geelhaar
Journal:
APL Materials
APL Mater. 11, 091120 (2023)
Published: September 2023
Includes: Supplementary data
Journal Articles
Optical properties of ScN layers grown on Al2O3(0001) by plasma-assisted molecular beam epitaxy
Open Access
Journal:
Applied Physics Letters
Appl. Phys. Lett. 123, 112102 (2023)
Published: September 2023
Includes: Supplementary data
Journal Articles
Journal Articles
Lattice parameters of ScxAl1−xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy
Open Access
Journal:
Applied Physics Letters
Appl. Phys. Lett. 122, 152103 (2023)
Published: April 2023
Includes: Supplementary data
Journal Articles
Journal Articles
Piezoelectric field, exciton lifetime, and cathodoluminescence intensity at threading dislocations in GaN{0001}
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 112, 122101 (2018)
Published: March 2018
Journal Articles
Gabriele Calabrese, Pierre Corfdir, Guanhui Gao, Carsten Pfüller, Achim Trampert, Oliver Brandt, Lutz Geelhaar, Sergio Fernández-Garrido
Journal:
Applied Physics Letters
Appl. Phys. Lett. 111, 219901 (2017)
Published: November 2017
Journal Articles
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
Available to PurchaseJesús Zúñiga-Pérez, Vincent Consonni, Liverios Lymperakis, Xiang Kong, Achim Trampert, Sergio Fernández-Garrido, Oliver Brandt, Hubert Renevier, Stacia Keller, Karine Hestroffer, Markus R. Wagner, Juan Sebastián Reparaz, Fatih Akyol, Siddharth Rajan, Stéphanie Rennesson, Tomás Palacios, Guy Feuillet
Journal:
Applied Physics Reviews
Appl. Phys. Rev. 3, 041303 (2016)
Published: November 2016
Journal Articles
Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil
Available to PurchaseGabriele Calabrese, Pierre Corfdir, Guanhui Gao, Carsten Pfüller, Achim Trampert, Oliver Brandt, Lutz Geelhaar, Sergio Fernández-Garrido
Journal:
Applied Physics Letters
Appl. Phys. Lett. 108, 202101 (2016)
Published: May 2016
Journal Articles
Counterintuitive strain distribution in axial (In,Ga)N/GaN nanowires
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 108, 032103 (2016)
Published: January 2016
Journal Articles
Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells
Available to PurchaseCaroline Chèze, Marcin Siekacz, Grzegorz Muzioł, Henryk Turski, Szymon Grzanka, Marcin Kryśko, Jan L. Weyher, Michał Boćkowski, Christian Hauswald, Jonas Lähnemann, Oliver Brandt, Martin Albrecht, Czesław Skierbiszewski
J. Vac. Sci. Technol. B 31, 03C130 (2013)
Published: April 2013
Journal Articles
Observation of the electron-accumulation layer at the surface of InN by cross-sectional micro-Raman spectroscopy
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 102, 072101 (2013)
Published: February 2013
Journal Articles
Growth of wurtzite InN on bulk In2O3(111) wafers
Available to PurchaseSergey Sadofev, YongJin Cho, Oliver Brandt, Manfred Ramsteiner, Raffaella Calarco, Henning Riechert, Steven C. Erwin, Zbigniew Galazka, Maxym Korytov, Martin Albrecht, Reinhard Uecker, Roberto Fornari
Journal:
Applied Physics Letters
Appl. Phys. Lett. 101, 172102 (2012)
Published: October 2012
Journal Articles
Effects of Ga on the growth of InN on O-face ZnO ( 000 1 ¯ ) by plasma-assisted molecular beam epitaxy
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 101, 052103 (2012)
Published: July 2012
Journal Articles
Electrical characterization of all-epitaxial Fe/GaN(0001) Schottky tunnel contacts
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 101, 032404 (2012)
Published: July 2012
Journal Articles
Structural properties of InN films grown on O-face ZnO ( 000 1 ¯ ) by plasma-assisted molecular beam epitaxy
Available to PurchaseYongJin Cho, Oliver Brandt, Maxim Korytov, Martin Albrecht, Vladimir M. Kaganer, Manfred Ramsteiner, Henning Riechert
Journal:
Applied Physics Letters
Appl. Phys. Lett. 100, 152105 (2012)
Published: April 2012
Journal Articles
Reflection high-energy electron diffraction ϕ scans for in situ monitoring the heteroepitaxial growth of Fe on GaN(0001) by molecular beam epitaxy
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 97, 031906 (2010)
Published: July 2010
Journal Articles
Thermal stability of epitaxial Fe films on GaN(0001)
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 95, 111906 (2009)
Published: September 2009
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