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Journal Articles

Key plasma parameters for nanometric precision etching of Si films in chlorine discharges

P. Brichon, E. Despiau-Pujo, O. Mourey, O. Joubert
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 053303 (2015)
https://doi.org/10.1063/1.4928294
Published: August 2015
View article titled, Key plasma parameters for nanometric precision etching of Si films in chlorine discharges
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Journal Articles

Revisiting the mechanisms involved in Line Width Roughness smoothing of 193 nm photoresist patterns during HBr plasma treatment

M. Brihoum, R. Ramos, K. Menguelti, G. Cunge, E. Pargon, O. Joubert
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 013302 (2013)
https://doi.org/10.1063/1.4773068
Published: January 2013
View article titled, Revisiting the mechanisms involved in Line Width Roughness smoothing of 193 nm photoresist patterns during HBr plasma treatment
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Journal Articles

Unbiased line width roughness measurements with critical dimension scanning electron microscopy and critical dimension atomic force microscopy

L. Azarnouche, E. Pargon, K. Menguelti, M. Fouchier, D. Fuard, P. Gouraud, C. Verove, O. Joubert
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 084318 (2012)
https://doi.org/10.1063/1.4705509
Published: April 2012
View article titled, Unbiased line width roughness measurements with critical dimension scanning electron microscopy and critical dimension atomic force microscopy
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Journal Articles

Analysis of pulsed high-density HBr and Cl2 plasmas: Impact of the pulsing parameters on the radical densities

P. Bodart, M. Brihoum, G. Cunge, O. Joubert, N. Sadeghi
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 113302 (2011)
https://doi.org/10.1063/1.3663443
Published: December 2011
View article titled, Analysis of pulsed high-density HBr and Cl<sub>2</sub> plasmas: Impact of the pulsing parameters on the radical densities
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Journal Articles

Etching mechanisms of thin SiO2 exposed to Cl2 plasma

C. Petit-Etienne, M. Darnon, L. Vallier, E. Pargon, G. Cunge, M. Fouchier, P. Bodart, M. Haass, M. Brihoum, O. Joubert, S. Banna, T. Lill
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 051202 (2011)
https://doi.org/10.1116/1.3622311
Published: August 2011
View article titled, Etching mechanisms of thin SiO<sub>2</sub> exposed to Cl<sub>2</sub> plasma
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Journal Articles

Etch mechanisms of silicon gate structures patterned in SF 6 / CH 2 F 2 / Ar inductively coupled plasmas

O. Luere, E. Pargon, L. Vallier, B. Pelissier, O. Joubert
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 011028 (2011)
https://doi.org/10.1116/1.3522656
Published: January 2011
View article titled, Etch mechanisms of silicon gate structures patterned in SF 6 / CH 2 F 2 / Ar inductively coupled plasmas
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Journal Articles

Poly- Si / TiN / Mo / HfO 2 gate stack etching in high-density plasmas

O. Luere, E. Pargon, L. Vallier, O. Joubert
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 011024 (2011)
https://doi.org/10.1116/1.3533939
Published: January 2011
View article titled, Poly- Si / TiN / Mo / HfO 2 gate stack etching in high-density plasmas
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Journal Articles

Residue growth on metallic hard mask after dielectric etching in fluorocarbon based plasmas. II. Solutions

N. Posseme, R. Bouyssou, T. Chevolleau, T. David, V. Arnal, M. Darnon, Ph. Brun, C. Verove, O. Joubert
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 011018 (2011)
https://doi.org/10.1116/1.3527073
Published: January 2011
View article titled, Residue growth on metallic hard mask after dielectric etching in fluorocarbon based plasmas. II. Solutions
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Journal Articles

Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms

N. Posseme, T. Chevolleau, R. Bouyssou, T. David, V. Arnal, J. P. Barnes, C. Verove, O. Joubert
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 809–816 (2010)
https://doi.org/10.1116/1.3456182
Published: July 2010
View article titled, Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms
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Journal Articles

Scatterometric porosimetry: A new characterization technique for porous material patterned structures

R. Bouyssou, M. El Kodadi, C. Licitra, T. Chevolleau, M. Besacier, N. Posseme, O. Joubert, P. Schiavone
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, L31–L34 (2010)
https://doi.org/10.1116/1.3457489
Published: July 2010
View article titled, Scatterometric porosimetry: A new characterization technique for porous material patterned structures
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Journal Articles

Roughening of porous SiCOH materials in fluorocarbon plasmas

F. Bailly, T. David, T. Chevolleau, M. Darnon, N. Posseme, R. Bouyssou, J. Ducote, O. Joubert, C. Cardinaud
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 014906 (2010)
https://doi.org/10.1063/1.3446820
Published: July 2010
View article titled, Roughening of porous SiCOH materials in fluorocarbon plasmas
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Journal Articles

Patterning of porous SiOCH using an organic mask: Comparison with a metallic masking strategy

M. Darnon, T. Chevolleau, T. David, J. Ducote, N. Posseme, R. Bouyssou, F. Bailly, D. Perret, O. Joubert
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 149–156 (2010)
https://doi.org/10.1116/1.3276703
Published: January 2010
View article titled, Patterning of porous SiOCH using an organic mask: Comparison with a metallic masking strategy
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Journal Articles

Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists

E. Pargon, K. Menguelti, M. Martin, A. Bazin, O. Chaix-Pluchery, C. Sourd, S. Derrough, T. Lill, O. Joubert
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 094902 (2009)
https://doi.org/10.1063/1.3116504
Published: May 2009
View article titled, Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists
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Journal Articles

Plasma impact on 193 nm photoresist linewidth roughness: Role of plasma vacuum ultraviolet light

E. Pargon, M. Martin, K. Menguelti, L. Azarnouche, J. Foucher, O. Joubert
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 103111 (2009)
https://doi.org/10.1063/1.3094128
Published: March 2009
View article titled, Plasma impact on 193 nm photoresist linewidth roughness: Role of plasma vacuum ultraviolet light
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Journal Articles

Plasma reactor dry cleaning strategy after TaC, MoN, WSi, W, and WN etching processes

R. Ramos, G. Cunge, O. Joubert, T. Lill
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 113–121 (2009)
https://doi.org/10.1116/1.3058710
Published: January 2009
View article titled, Plasma reactor dry cleaning strategy after TaC, MoN, WSi, W, and WN etching processes
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Journal Articles

Modifications of dielectric films induced by plasma ashing processes: Hybrid versus porous SiOCH materials

M. Darnon, T. Chevolleau, T. David, N. Posseme, J. Ducote, C. Licitra, L. Vallier, O. Joubert, J. Torres
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1964–1970 (2008)
https://doi.org/10.1116/1.3006021
Published: November 2008
View article titled, Modifications of dielectric films induced by plasma ashing processes: Hybrid versus porous SiOCH materials
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Journal Articles

Tungsten metal gate etching in Cl 2 ∕ O 2 inductively coupled high density plasmas

T. Morel, S. Bamola, R. Ramos, A. Beaurain, E. Pargon, O. Joubert
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1875–1882 (2008)
https://doi.org/10.1116/1.3002392
Published: November 2008
View article titled, Tungsten metal gate etching in Cl 2 ∕ O 2 inductively coupled high density plasmas
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Journal Articles

Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors

E. Pargon, M. Martin, J. Thiault, O. Joubert, J. Foucher, T. Lill
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1011–1020 (2008)
https://doi.org/10.1116/1.2917071
Published: May 2008
View article titled, Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors
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Journal Articles

Plasma reactor dry cleaning strategy after TiN, TaN and Hf O 2 etching processes

R. Ramos, G. Cunge, O. Joubert
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 181–188 (2008)
https://doi.org/10.1116/1.2830637
Published: January 2008
View article titled, Plasma reactor dry cleaning strategy after TiN, TaN and Hf O 2 etching processes
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Journal Articles

Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas

N. Posseme, T. Chevolleau, T. David, M. Darnon, O. Louveau, O. Joubert
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 25, 1928–1940 (2007)
https://doi.org/10.1116/1.2804615
Published: December 2007
View article titled, Mechanisms of porous dielectric film modification induced by reducing and oxidizing ash plasmas
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