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O. F. Vyvenko
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Journal Articles

Secondary electron energy distribution from insulators in helium ion microscope

A. E. Anikeva, Yu. V. Petrov, O. F. Vyvenko
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2064, 020001 (2019)
https://doi.org/10.1063/1.5087657
Published: January 2019
View article titled, Secondary electron energy distribution from insulators in helium ion microscope
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Journal Articles

Correlation of structure and intrinsic luminescence of freshly introduced dislocations in GaN revealed by SEM and TEM

O. S. Medvedev, O. F. Vyvenko, E. V. Ubyivovk, S. V. Shapenkov, M. Seibt
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2064, 040003 (2019)
https://doi.org/10.1063/1.5087682
Published: January 2019
View article titled, Correlation of structure and intrinsic luminescence of freshly introduced dislocations in GaN revealed by SEM and TEM
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Journal Articles

Recombination-related properties of a-screw dislocations in GaN: A combined CL, EBIC, TEM study

O. S. Medvedev, O. F. Vyvenko, A. S. Bondarenko, V. Yu. Mikhailovskii, E. V. Ubyivovk, P. Peretzki, M. Seibt
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1748, 020011 (2016)
https://doi.org/10.1063/1.4954345
Published: June 2016
View article titled, Recombination-related properties of a-screw dislocations in GaN: A combined CL, EBIC, TEM study
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Journal Articles

A pure 1.5   μ m electroluminescence from metal-oxide-silicon tunneling diode using dislocation network

X. Yu, W. Seifert, O. F. Vyvenko, M. Kittler, T. Wilhelm, M. Reiche
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 041108 (2008)
https://doi.org/10.1063/1.2965126
Published: July 2008
View article titled, A pure 1.5   μ m electroluminescence from metal-oxide-silicon tunneling diode using dislocation network
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Journal Articles

Recombination activity and electrical levels of dislocations in p -type Si ∕ SiGe structures: Impact of copper contamination and hydrogenation

O. F. Vyvenko, M. Kittler, W. Seifert
Journal: Journal of Applied Physics
J. Appl. Phys. 96, 6425–6430 (2004)
https://doi.org/10.1063/1.1812602
Published: December 2004
View article titled, Recombination activity and electrical levels of dislocations in p -type Si ∕ SiGe structures: Impact of copper contamination and hydrogenation
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Journal Articles

Observation of transition metals at shunt locations in multicrystalline silicon solar cells

T. Buonassisi, O. F. Vyvenko, A. A. Istratov, E. R. Weber, G. Hahn, D. Sontag, J. P. Rakotoniaina, O. Breitenstein, J. Isenberg, R. Schindler
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 1556–1561 (2004)
https://doi.org/10.1063/1.1636252
Published: February 2004
View article titled, Observation of transition metals at shunt locations in multicrystalline silicon solar cells
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Journal Articles

X-ray beam induced current—a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in silicon

O. F. Vyvenko, T. Buonassisi, A. A. Istratov, H. Hieslmair, A. C. Thompson, R. Schindler, E. R. Weber
Journal: Journal of Applied Physics
J. Appl. Phys. 91, 3614–3617 (2002)
https://doi.org/10.1063/1.1450026
Published: March 2002
View article titled, X-ray beam induced current—a synchrotron radiation based technique for the <em>in situ</em> analysis of recombination properties and chemical nature of metal clusters in silicon
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Journal Articles

Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment

O. F. Vyvenko, O. Krüger, M. Kittler
Journal: Applied Physics Letters
Appl. Phys. Lett. 76, 697–699 (2000)
https://doi.org/10.1063/1.125865
Published: February 2000
View article titled, Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment
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Journal Articles

DX‐like center generated by uniaxial strains of screw dislocations in CdS

A. A. Istratov, O. F. Vyvenko
Journal: Journal of Applied Physics
J. Appl. Phys. 80, 4400–4410 (1996)
https://doi.org/10.1063/1.363400
Published: October 1996
View article titled, <em>DX</em>‐like center generated by uniaxial strains of screw dislocations in CdS
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