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Journal Articles

Electromigration void nucleation and growth analysis using large-scale early failure statistics

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M. Hauschildt, M. Gall, C. Hennesthal, G. Talut, O. Aubel, K. B. Yeap, E. Zschech
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1601, 89–98 (2014)
https://doi.org/10.1063/1.4881343
Published: June 2014
View articletitled, Electromigration void nucleation and growth analysis using large-scale early failure statistics
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Journal Articles

Stress Phenomena In Times Of Porous Low‐k Dielectrics

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O. Aubel, M. Grillberger, J. Poppe, M. Lehr, C. Hennesthal
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1300, 68–77 (2010)
https://doi.org/10.1063/1.3527139
Published: November 2010
View articletitled, Stress Phenomena In Times Of Porous Low‐k Dielectrics
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Journal Articles

Investigation Of Stress‐Induced Voiding Of Double Cross‐Shaped Single Via Test Structure And Derivatives For Deep‐Sub Micron Technology Nodes

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J. Poppe, W. Yao, O. Aubel, P. Limbecker
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1300, 78–84 (2010)
https://doi.org/10.1063/1.3527140
Published: November 2010
View articletitled, Investigation Of Stress‐Induced Voiding Of Double Cross‐Shaped Single Via Test Structure And Derivatives For Deep‐Sub Micron Technology Nodes
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Journal Articles

The Evolution of Barrier Properties During Reliability Testing of Cu Interconnects

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M. A. Meyer, O. Aubel, F. Feustel, H. J. Engelmann, I. Zienert, J. Poppe, D. Gehre, C. Witt
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1143, 97–103 (2009)
https://doi.org/10.1063/1.3169271
Published: June 2009
View articletitled, The Evolution of Barrier Properties During Reliability Testing of Cu Interconnects
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Journal Articles

Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects

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W. Shao, S. G. Mhaisalkar, T. Sritharan, A. V. Vairagar, H. J. Engelmann, O. Aubel, E. Zschech, A. M. Gusak, K. N. Tu
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 052106 (2007)
https://doi.org/10.1063/1.2437689
Published: January 2007
View articletitled, Direct evidence of Cu/cap/liner edge being the dominant electromigration path in dual damascene Cu interconnects
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