1-20 of 49
Noritaka Usami
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

3D CNN and grad-CAM based visualization for predicting generation of dislocation clusters in multicrystalline silicon

Kyoka Hara, Takuto Kojima, Kentaro Kutsukake, Hiroaki Kudo, Noritaka Usami
Journal: APL Machine Learning
APL Mach. Learn. 1, 036106 (2023)
https://doi.org/10.1063/5.0156044
Published: July 2023
View article titled, 3D CNN and grad-CAM based visualization for predicting generation of dislocation clusters in multicrystalline silicon
Open the PDF for 3D CNN and grad-CAM based visualization for predicting generation of dislocation clusters in multicrystalline silicon in another window
Journal Articles

A machine learning-based prediction of crystal orientations for multicrystalline materials

Kyoka Hara, Takuto Kojima, Kentaro Kutsukake, Hiroaki Kudo, Noritaka Usami
Journal: APL Machine Learning
APL Mach. Learn. 1, 026113 (2023)
https://doi.org/10.1063/5.0138099
Published: May 2023
View article titled, A machine learning-based prediction of crystal orientations for multicrystalline materials
Open the PDF for A machine learning-based prediction of crystal orientations for multicrystalline materials in another window
Includes: Supplementary data
Journal Articles

Fine line screen-printing aluminum for front side p+ metallization of high efficiency solar cells

Kosuke Tsuji, Shota Suzuki, Marwan Dhamrin, Adrian Adrian, Thomas Buck, Noritaka Usami
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2487, 130014 (2022)
https://doi.org/10.1063/5.0089217
Published: August 2022
View article titled, Fine line screen-printing aluminum for front side <em>p</em><sup>+</sup> metallization of high efficiency solar cells
Open the PDF for Fine line screen-printing aluminum for front side <em>p</em><sup>+</sup> metallization of high efficiency solar cells in another window
Journal Articles

Study on electrical activity of grain boundaries in silicon through systematic control of structural parameters and characterization using a pretrained machine learning model

Yusuke Fukuda, Kentaro Kutsukake, Takuto Kojima, Yutaka Ohno, Noritaka Usami
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 025102 (2022)
https://doi.org/10.1063/5.0086193
Published: July 2022
View article titled, Study on electrical activity of grain boundaries in silicon through systematic control of structural parameters and characterization using a pretrained machine learning model
Open the PDF for Study on electrical activity of grain boundaries in silicon through systematic control of structural parameters and characterization using a pretrained machine learning model in another window
Includes: Supplementary data
Journal Articles

Improved conversion efficiency of p-type BaSi2/n-type crystalline Si heterojunction solar cells by a low growth rate deposition of BaSi2

Michinobu Fujiwara, Kazuma Takahashi, Yoshihiko Nakagawa, Kazuhiro Gotoh, Takashi Itoh, Yasuyoshi Kurokawa, Noritaka Usami
Journal: AIP Advances
AIP Advances 12, 045115 (2022)
https://doi.org/10.1063/5.0083812
Published: April 2022
View article titled, Improved conversion efficiency of p-type BaSi<sub>2</sub>/n-type crystalline Si heterojunction solar cells by a low growth rate deposition of BaSi<sub>2</sub>
Open the PDF for Improved conversion efficiency of p-type BaSi<sub>2</sub>/n-type crystalline Si heterojunction solar cells by a low growth rate deposition of BaSi<sub>2</sub> in another window
Includes: Supplementary data
Journal Articles

Direct prediction of electrical properties of grain boundaries from photoluminescence profiles using machine learning

Kentaro Kutsukake, Kazuki Mitamura, Noritaka Usami, Takuto Kojima
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 032105 (2021)
https://doi.org/10.1063/5.0049847
Published: July 2021
View article titled, Direct prediction of electrical properties of grain boundaries from photoluminescence profiles using machine learning
Open the PDF for Direct prediction of electrical properties of grain boundaries from photoluminescence profiles using machine learning in another window
Includes: Supplementary data
Journal Articles

Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation

Kazuki Mitamura, Kentaro Kutsukake, Takuto Kojima, Noritaka Usami
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 125103 (2020)
https://doi.org/10.1063/5.0017823
Published: September 2020
View article titled, Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation
Open the PDF for Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation in another window
Journal Articles

Atomic hydrogen passivation for photoresponsivity enhancement of boron-doped p-BaSi2 films and performance improvement of boron-doped p-BaSi2/n-Si heterojunction solar cells

Zhihao Xu, Takuma Sato, Louise Benincasa, Yudai Yamashita, Tianguo Deng, Kazuhiro Gotoh, Kaoru Toko, Noritaka Usami, Andrew B. Filonov, Dmitri B. Migas, Denis A. Shohonov, Takashi Suemasu
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 233104 (2020)
https://doi.org/10.1063/5.0005763
Published: June 2020
View article titled, Atomic hydrogen passivation for photoresponsivity enhancement of boron-doped p-BaSi<sub>2</sub> films and performance improvement of boron-doped p-BaSi<sub>2</sub>/n-Si heterojunction solar cells
Open the PDF for Atomic hydrogen passivation for photoresponsivity enhancement of boron-doped p-BaSi<sub>2</sub> films and performance improvement of boron-doped p-BaSi<sub>2</sub>/n-Si heterojunction solar cells in another window
Journal Articles

Impact of deposition of indium tin oxide double layers on hydrogenated amorphous silicon/crystalline silicon heterojunction

Masanori Semma, Kazuhiro Gotoh, Markus Wilde, Shohei Ogura, Yasuyoshi Kurokawa, Katsuyuki Fukutani, Noritaka Usami
Journal: AIP Advances
AIP Advances 10, 065008 (2020)
https://doi.org/10.1063/5.0009994
Published: June 2020
View article titled, Impact of deposition of indium tin oxide double layers on hydrogenated amorphous silicon/crystalline silicon heterojunction
Open the PDF for Impact of deposition of indium tin oxide double layers on hydrogenated amorphous silicon/crystalline silicon heterojunction in another window
Includes: Supplementary data
Journal Articles

Effect of forming gas annealing on hydrogen content and surface morphology of titanium oxide coated crystalline silicon heterocontacts

Yuta Nakagawa, Kazuhiro Gotoh, Markus Wilde, Shohei Ogura, Yasuyoshi Kurokawa, Katsuyuki Fukutani, Noritaka Usami
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 022415 (2020)
https://doi.org/10.1116/1.5134719
Published: February 2020
View article titled, Effect of forming gas annealing on hydrogen content and surface morphology of titanium oxide coated crystalline silicon heterocontacts
Open the PDF for Effect of forming gas annealing on hydrogen content and surface morphology of titanium oxide coated crystalline silicon heterocontacts in another window
Journal Articles

Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition

Shinsuke Miyagawa, Kazuhiro Gotoh, Shohei Ogura, Markus Wilde, Yasuyoshi Kurokawa, Katsuyuki Fukutani, Noritaka Usami
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 022410 (2020)
https://doi.org/10.1116/1.5134720
Published: January 2020
View article titled, Effect of hydrogen plasma treatment on the passivation performance of TiO<em><sub>x</sub></em> on crystalline silicon prepared by atomic layer deposition
Open the PDF for Effect of hydrogen plasma treatment on the passivation performance of TiO<em><sub>x</sub></em> on crystalline silicon prepared by atomic layer deposition in another window
Journal Articles

Fine line Al printing on narrow point contact opening for front side metallization

Kosuke Tsuji, Shota Suzuki, Naoya Morishita, Takashi Kuroki, Masahiro Nakahara, Marwan Dhamrin, Zih-Wei Peng, Thomas Buck, Noritaka Usami
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2147, 040019 (2019)
https://doi.org/10.1063/1.5123846
Published: August 2019
View article titled, Fine line Al printing on narrow point contact opening for front side metallization
Open the PDF for Fine line Al printing on narrow point contact opening for front side metallization in another window
Journal Articles

Hydrogen concentration at a-Si:H/c-Si heterointerfaces—The impact of deposition temperature on passivation performance

Kazuhiro Gotoh, Markus Wilde, Shinya Kato, Shohei Ogura, Yasuyoshi Kurokawa, Katsuyuki Fukutani, Noritaka Usami
Journal: AIP Advances
AIP Advances 9, 075115 (2019)
https://doi.org/10.1063/1.5100086
Published: July 2019
View article titled, Hydrogen concentration at a-Si:H/c-Si heterointerfaces—The impact of deposition temperature on passivation performance
Open the PDF for Hydrogen concentration at a-Si:H/c-Si heterointerfaces—The impact of deposition temperature on passivation performance in another window
Journal Articles

Improving the photoresponse spectra of BaSi2 layers by capping with hydrogenated amorphous Si layers prepared by radio-frequency hydrogen plasma

Zhihao Xu, Kazuhiro Gotoh, Tianguo Deng, Takuma Sato, Ryota Takabe, Kaoru Toko, Noritaka Usami, Takashi Suemasu
Journal: AIP Advances
AIP Advances 8, 055306 (2018)
https://doi.org/10.1063/1.5025021
Published: May 2018
View article titled, Improving the photoresponse spectra of BaSi<sub>2</sub> layers by capping with hydrogenated amorphous Si layers prepared by radio-frequency hydrogen plasma
Open the PDF for Improving the photoresponse spectra of BaSi<sub>2</sub> layers by capping with hydrogenated amorphous Si layers prepared by radio-frequency hydrogen plasma in another window
Journal Articles

Effects of deposition rate on the structure and electron density of evaporated BaSi2 films

Kosuke O. Hara, Cham Thi Trinh, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Yasuyoshi Kurokawa, Takashi Suemasu, Noritaka Usami
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 045103 (2016)
https://doi.org/10.1063/1.4959214
Published: July 2016
View article titled, Effects of deposition rate on the structure and electron density of evaporated BaSi<sub>2</sub> films
Open the PDF for Effects of deposition rate on the structure and electron density of evaporated BaSi<sub>2</sub> films in another window
Journal Articles

p-BaSi2/n-Si heterojunction solar cells with conversion efficiency reaching 9.0%

Daichi Tsukahara, Suguru Yachi, Hiroki Takeuchi, Ryota Takabe, Weijie Du, Masakazu Baba, Yunpeng Li, Kaoru Toko, Noritaka Usami, Takashi Suemasu
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 152101 (2016)
https://doi.org/10.1063/1.4945725
Published: April 2016
View article titled, p-BaSi<sub>2</sub>/n-Si heterojunction solar cells with conversion efficiency reaching 9.0%
Open the PDF for p-BaSi<sub>2</sub>/n-Si heterojunction solar cells with conversion efficiency reaching 9.0% in another window
Journal Articles

Suppression of metastable-phase inclusion in N-polar ( 000 1 ¯ ) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

Kanako Shojiki, Jung-Hun Choi, Takuya Iwabuchi, Noritaka Usami, Tomoyuki Tanikawa, Shigeyuki Kuboya, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 222102 (2015)
https://doi.org/10.1063/1.4922131
Published: June 2015
View article titled, Suppression of metastable-phase inclusion in N-polar ( 000 1 ¯ ) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy
Open the PDF for Suppression of metastable-phase inclusion in N-polar ( 000 1 ¯ ) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy in another window
Includes: Supplementary data
Journal Articles

Relationship between dislocation density and contact angle of dendrite crystals in practical size silicon ingot

Isao Takahashi, Supawan Joonwichien, Satoru Matsushima, Noritaka Usami
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 095701 (2015)
https://doi.org/10.1063/1.4913855
Published: March 2015
View article titled, Relationship between dislocation density and contact angle of dendrite crystals in practical size silicon ingot
Open the PDF for Relationship between dislocation density and contact angle of dendrite crystals in practical size silicon ingot in another window
Journal Articles

Potential variation around grain boundaries in BaSi2 films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy

Masakazu Baba, Kosuke O. Hara, Daichi Tsukahara, Kaoru Toko, Noritaka Usami, Takashi Sekiguchi, Takashi Suemasu
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 235301 (2014)
https://doi.org/10.1063/1.4904864
Published: December 2014
View article titled, Potential variation around grain boundaries in BaSi<sub>2</sub> films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy
Open the PDF for Potential variation around grain boundaries in BaSi<sub>2</sub> films grown on multicrystalline silicon evaluated using Kelvin probe force microscopy in another window
Journal Articles

Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications

Weijie Du, Masakazu Baba, Kaoru Toko, Kosuke O. Hara, Kentaro Watanabe, Takashi Sekiguchi, Noritaka Usami, Takashi Suemasu
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 223701 (2014)
https://doi.org/10.1063/1.4882117
Published: June 2014
View article titled, Analysis of the electrical properties of Cr/n-BaSi<sub>2</sub> Schottky junction and n-BaSi<sub>2</sub>/p-Si heterojunction diodes for solar cell applications
Open the PDF for Analysis of the electrical properties of Cr/n-BaSi<sub>2</sub> Schottky junction and n-BaSi<sub>2</sub>/p-Si heterojunction diodes for solar cell applications in another window