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Journal Articles

Nucleation control of high crystal quality heteroepitaxial Sc0.4Al0.6N grown by molecular beam epitaxy

Matthew T. Hardy, Andrew C. Lang, Eric N. Jin, Neeraj Nepal, Brian P. Downey, Vikrant J. Gokhale, D. Scott Katzer, Virginia D. Wheeler
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 105301 (2023)
https://doi.org/10.1063/5.0164430
Published: September 2023
View article titled, Nucleation control of high crystal quality heteroepitaxial Sc<sub>0.4</sub>Al<sub>0.6</sub>N grown by molecular beam epitaxy
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Journal Articles

Impact of surface preparation on the epitaxial growth of SrTiO3 on ScAlN/GaN heterostructures

Eric N. Jin, Andrew C. Lang, Brian P. Downey, Vikrant J. Gokhale, Matthew T. Hardy, Neeraj Nepal, D. Scott Katzer, Virginia D. Wheeler
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 025303 (2023)
https://doi.org/10.1063/5.0152694
Published: July 2023
View article titled, Impact of surface preparation on the epitaxial growth of SrTiO<sub>3</sub> on ScAlN/GaN heterostructures
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Includes: Supplementary data
Journal Articles

Structural characterization of epitaxial γ-Ta2N thin films and AlN/γ-Ta2N heterostructures on SiC substrates

Neeraj Nepal, D. Scott Katzer, Andrew C. Lang, Brian P. Downey, Matthew T. Hardy, David J. Meyer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042706 (2023)
https://doi.org/10.1116/6.0002530
Published: June 2023
View article titled, Structural characterization of epitaxial γ-Ta<sub>2</sub>N thin films and AlN/γ-Ta<sub>2</sub>N heterostructures on SiC substrates
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Journal Articles

Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition

Jeffrey M. Woodward, Samantha G. Rosenberg, David R. Boris, Michael J. Johnson, Scott G. Walton, Scooter D. Johnson, Zachary R. Robinson, Neeraj Nepal, Karl F. Ludwig, Jr., Jennifer K. Hite, Charles R. Eddy, Jr.
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 062405 (2022)
https://doi.org/10.1116/6.0002021
Published: October 2022
View article titled, Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
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Includes: Supplementary data
Journal Articles

Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy

Diego Vaca, Matthew Barry, Luke Yates, Neeraj Nepal, D. Scott Katzer, Brian P. Downey, Virginia Wheeler, Luke Nyakiti, David J. Meyer, Samuel Graham, Satish Kumar
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 042107 (2022)
https://doi.org/10.1063/5.0098048
Published: July 2022
View article titled, Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures

Eric N. Jin, Brian P. Downey, Vikrant J. Gokhale, Jason A. Roussos, Matthew T. Hardy, Tyler A. Growden, Neeraj Nepal, D. Scott Katzer, Jeffrey P. Calame, David J. Meyer
Journal: APL Materials
APL Mater. 9, 111101 (2021)
https://doi.org/10.1063/5.0063295
Published: November 2021
View article titled, Electrical properties of high permittivity epitaxial SrCaTiO<sub>3</sub> grown on AlGaN/GaN heterostructures
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Includes: Supplementary data
Journal Articles

Influence of oxygen partial pressure on properties of monoclinic Ga2O3 deposited on sapphire substrates

Jaime A. Freitas, Jr., James C. Culbertson, Neeraj Nepal, Alyssa L. Mock, Marko J. Tadjer, Zixuan Feng, Hongping Zhao
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 033414 (2021)
https://doi.org/10.1116/6.0000851
Published: May 2021
View article titled, Influence of oxygen partial pressure on properties of monoclinic Ga<sub>2</sub>O<sub>3</sub> deposited on sapphire substrates
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Journal Articles

Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy

Neeraj Nepal, D. Scott Katzer, Brian P. Downey, Virginia D. Wheeler, Luke O. Nyakiti, David F. Storm, Matthew T. Hardy, Jaime A. Freitas, Eric N. Jin, Diego Vaca, Luke Yates, Samuel Graham, Satish Kumar, David J. Meyer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 063406 (2020)
https://doi.org/10.1116/6.0000452
Published: October 2020
View article titled, Heteroepitaxial growth of β-Ga<sub>2</sub>O<sub>3</sub> films on SiC via molecular beam epitaxy
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Journal Articles

The role of plasma in plasma-enhanced atomic layer deposition of crystalline films

David R. Boris, Virginia D. Wheeler, Neeraj Nepal, Syed B. Qadri, Scott G. Walton, Charles (Chip) R. Eddy
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 040801 (2020)
https://doi.org/10.1116/6.0000145
Published: May 2020
View article titled, The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
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Journal Articles

Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire

David F. Storm, Tyler A. Growden, Evan M. Cornuelle, Prudhvi R. Peri, Thomas Osadchy, Jeffrey W. Daulton, Wei-Dong Zhang, D. Scott Katzer, Matthew T. Hardy, Neeraj Nepal, Richard Molnar, Elliott R. Brown, Paul R. Berger, David J. Smith, David J. Meyer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 032214 (2020)
https://doi.org/10.1116/6.0000052
Published: May 2020
View article titled, Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire
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Journal Articles

Growth-induced temperature changes during transition metal nitride epitaxy on transparent SiC substrates

Douglas Scott Katzer, Matthew T. Hardy, Neeraj Nepal, Brian P. Downey, Eric N. Jin, David J. Meyer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 032204 (2020)
https://doi.org/10.1116/6.0000063
Published: April 2020
View article titled, Growth-induced temperature changes during transition metal nitride epitaxy on transparent SiC substrates
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Journal Articles

RF-plasma MBE growth of epitaxial metallic TaNx transition metal nitride films on SiC

D. Scott Katzer, Neeraj Nepal, Matthew T. Hardy, Brian P. Downey, David F. Storm, Eric N. Jin, David J. Meyer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 031211 (2019)
https://doi.org/10.1116/1.5089779
Published: April 2019
View article titled, RF-plasma MBE growth of epitaxial metallic TaN<sub>x</sub> transition metal nitride films on SiC
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Journal Articles

Influence of temperature on atomic layer epitaxial growth of indium nitride assessed with in situ grazing incidence small-angle x-ray scattering

Jeffrey M. Woodward, Samantha G. Rosenberg, Alexander C. Kozen, Neeraj Nepal, Scooter D. Johnson, Christa Wagenbach, Andrew H. Rowley, Zachary R. Robinson, Howie Joress, Karl F. Ludwig, Jr., Charles R. Eddy, Jr.
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 030901 (2019)
https://doi.org/10.1116/1.5081919
Published: March 2019
View article titled, Influence of temperature on atomic layer epitaxial growth of indium nitride assessed with <em>in situ</em> grazing incidence small-angle x-ray scattering
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Journal Articles

In situ studies of low temperature atomic level processing of GaN surfaces for atomic layer epitaxial growth

Samantha G. Rosenberg, Christa Wagenbach, Virginia R. Anderson, Scooter D. Johnson, Neeraj Nepal, Alexander C. Kozen, Jeffrey M. Woodward, Zachary R. Robinson, Max Munger, Howie Joress, Karl F. Ludwig, Jr., Charles R. Eddy, Jr.
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 020928 (2019)
https://doi.org/10.1116/1.5080380
Published: February 2019
View article titled, <em>In situ</em> studies of low temperature atomic level processing of GaN surfaces for atomic layer epitaxial growth
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Journal Articles

Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering

Neeraj Nepal, Virginia R. Anderson, Scooter D. Johnson, Brian P. Downey, David J. Meyer, Zachary R. Robinson, Jeffrey M. Woodward, Karl F. Ludwig, Charles R. Eddy, Jr.
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 020910 (2019)
https://doi.org/10.1116/1.5063340
Published: January 2019
View article titled, Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
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Journal Articles

Low temperature surface preparation of GaN substrates for atomic layer epitaxial growth: Assessment of ex situ preparations

Samantha G. Rosenberg, Daniel J. Pennachio, Christa Wagenbach, Scooter D. Johnson, Neeraj Nepal, Alexander C. Kozen, Jeffrey M. Woodward, Zachary Robinson, Howie Joress, Karl F. Ludwig, Chris J. Palmstrøm, Charles R. Eddy, Jr.
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 020908 (2019)
https://doi.org/10.1116/1.5080090
Published: January 2019
View article titled, Low temperature surface preparation of GaN substrates for atomic layer epitaxial growth: Assessment of <em>ex situ</em> preparations
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Journal Articles

Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy

David R. Boris, Virginia R. Anderson, Neeraj Nepal, Scooter D. Johnson, Zachary R. Robinson, Alexander C. Kozen, Charles R. Eddy, Jr., Scott G. Walton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 36, 051503 (2018)
https://doi.org/10.1116/1.5034247
Published: July 2018
View article titled, Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy
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Journal Articles

XeF2 etching of epitaxial Nb2N for lift-off or micromachining of III-N materials and devices

Brian P. Downey, D. Scott Katzer, Neeraj Nepal, Matthew T. Hardy, David J. Meyer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 05C312 (2017)
https://doi.org/10.1116/1.4994400
Published: July 2017
View article titled, XeF<sub>2</sub> etching of epitaxial Nb<sub>2</sub>N for lift-off or micromachining of III-N materials and devices
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Journal Articles

Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates

Matthew T. Hardy, Brian P. Downey, Neeraj Nepal, David F. Storm, D. Scott Katzer, David J. Meyer
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 162104 (2017)
https://doi.org/10.1063/1.4981807
Published: April 2017
View article titled, Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates
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Journal Articles

Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering

Virginia R. Anderson, Neeraj Nepal, Scooter D. Johnson, Zachary R. Robinson, Anindya Nath, Alexander C. Kozen, Syed B. Qadri, Alexander DeMasi, Jennifer K. Hite, Karl F. Ludwig, Jr., Charles R. Eddy, Jr.
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 031508 (2017)
https://doi.org/10.1116/1.4979007
Published: March 2017
View article titled, Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
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