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Journal Articles

Influence of HfO₂ and SiO₂ interfacial layers on the characteristics of n-GaN/HfSiO_x capacitors using plasma-enhanced atomic layer deposition

Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, Tamotsu Hashizume, Yasuo Koide

J. Vac. Sci. Technol. A 39, 062405 (2021)

https://doi.org/10.1116/6.0001334

Published: October 2021

View article titled, Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition

Journal Articles

Interface characteristics of β-Ga₂O₃/Al₂O₃/Pt capacitors after postmetallization annealing

Masafumi Hirose, Toshihide Nabatame, Yoshihiro Irokawa, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Hajime Kiyono

J. Vac. Sci. Technol. A 39, 012401 (2021)

https://doi.org/10.1116/6.0000626

Published: December 2020

View article titled, Interface characteristics of β-Ga2O3/Al2O3/Pt capacitors after postmetallization annealing

Journal Articles

Correlation between SiO₂ growth rate and difference in electronegativity of metal–oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor

Erika Maeda, Toshihide Nabatame, Masafumi Hirose, Mari Inoue, Akihiko Ohi, Naoki Ikeda, Hajime Kiyono

J. Vac. Sci. Technol. A 38, 032409 (2020)

https://doi.org/10.1116/6.0000078

Published: April 2020

View article titled, Correlation between SiO2 growth rate and difference in electronegativity of metal–oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor

Journal Articles

Investigation of Al₂O₃/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique

Yoshihiro Irokawa, Toshihide Nabatame, Kazuya Yuge, Akira Uedono, Akihiko Ohi, Naoki Ikeda, Yasuo Koide

AIP Advances 9, 085319 (2019)

https://doi.org/10.1063/1.5098489

Published: August 2019

View article titled, Investigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique

Journal Articles

Improvement in ferroelectricity of Hf_xZr_1−xO₂ thin films using top- and bottom-ZrO₂ nucleation layers

Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura

APL Mater. 7, 061107 (2019)

https://doi.org/10.1063/1.5096626

Published: June 2019

View article titled, Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers

Journal Articles

A photoconductive semiconductor switch driven ion beam injector for radiobiological experiments

Daisuke Satoh, Naoki Ikeda, Mitsuhiro Yoshida, Mitsuru Uesaka

AIP Conf. Proc. 2011, 090016 (2018)

https://doi.org/10.1063/1.5053397

Published: September 2018

View article titled, A photoconductive semiconductor switch driven ion beam injector for radiobiological experiments

Journal Articles

Superluminescent diode with a broadband gain based on self-assembled InAs quantum dots and segmented contacts for an optical coherence tomography light source

Nobuhiko Ozaki, David T. D. Childs, Jayanta Sarma, Timothy S. Roberts, Takuma Yasuda, Hiroshi Shibata, Hirotaka Ohsato, Eiichiro Watanabe, Naoki Ikeda, Yoshimasa Sugimoto, Richard A. Hogg

J. Appl. Phys. 119, 083107 (2016)

https://doi.org/10.1063/1.4942640

Published: February 2016

View article titled, Superluminescent diode with a broadband gain based on self-assembled InAs quantum dots and segmented contacts for an optical coherence tomography light source

Journal Articles

Monolithically grown multi-color InAs quantum dots as a spectral-shape-controllable near-infrared broadband light source

Nobuhiko Ozaki, Koichi Takeuchi, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto, Hisaya Oda, Kiyoshi Asakawa, Richard A. Hogg

Appl. Phys. Lett. 103, 051121 (2013)

https://doi.org/10.1063/1.4817386

Published: August 2013

View article titled, Monolithically grown multi-color InAs quantum dots as a spectral-shape-controllable near-infrared broadband light source

Journal Articles

Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer

Liwen Sang, Meiyong Liao, Naoki Ikeda, Yasuo Koide, Masatomo Sumiya

Appl. Phys. Lett. 99, 161109 (2011)

https://doi.org/10.1063/1.3654155

Published: October 2011

View article titled, Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer

Journal Articles

Polarization independent visible color filter comprising an aluminum film with surface-plasmon enhanced transmission through a subwavelength array of holes

Daisuke Inoue, Atsushi Miura, Tsuyoshi Nomura, Hisayoshi Fujikawa, Kazuo Sato, Naoki Ikeda, Daiju Tsuya, Yoshimasa Sugimoto, Yasuo Koide

Appl. Phys. Lett. 98, 093113 (2011)

https://doi.org/10.1063/1.3560467

Published: March 2011

View article titled, Polarization independent visible color filter comprising an aluminum film with surface-plasmon enhanced transmission through a subwavelength array of holes

Journal Articles

Acceleration and suppression of photoemission of GaAs quantum dots embedded in photonic crystal microcavities

Takashi Kuroda, Naoki Ikeda, Takaaki Mano, Yoshimasa Sugimoto, Tetsuyuki Ochiai, Keiji Kuroda, Shunsuke Ohkouchi, Nobuyuki Koguchi, Kazuaki Sakoda, Kiyoshi Asakawa

Appl. Phys. Lett. 93, 111103 (2008)

https://doi.org/10.1063/1.2978401

Published: September 2008

View article titled, Acceleration and suppression of photoemission of GaAs quantum dots embedded in photonic crystal microcavities

Journal Articles

Light amplification by stimulated Raman scattering in AlGaAs-based photonic-crystal line-defect waveguides

Hisaya Oda, Kuon Inoue, Akio Yamanaka, Naoki Ikeda, Yoshimasa Sugimoto, Kiyoshi Asakawa

Appl. Phys. Lett. 93, 051114 (2008)

https://doi.org/10.1063/1.2965110

Published: August 2008

View article titled, Light amplification by stimulated Raman scattering in AlGaAs-based photonic-crystal line-defect waveguides

Journal Articles

In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system

Shunsuke Ohkouchi, Yusui Nakamura, Naoki Ikeda, Yoshimasa Sugimoto, Kiyoshi Asakawa

Rev. Sci. Instrum. 78, 073908 (2007)

https://doi.org/10.1063/1.2756624

Published: July 2007

View article titled, In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system

Journal Articles

Topology optimization of waveguide bends with wide, flat bandwidth in air-bridge-type photonic crystal slabs

Yoshinori Watanabe, Naoki Ikeda, Yoshimasa Sugimoto, Yoshiaki Takata, Yoshinori Kitagawa, Akio Mizutani, Nobuhiko Ozaki, Kiyoshi Asakawa

J. Appl. Phys. 101, 113108 (2007)

https://doi.org/10.1063/1.2739317

Published: June 2007

View article titled, Topology optimization of waveguide bends with wide, flat bandwidth in air-bridge-type photonic crystal slabs

Journal Articles

Self-phase modulation in photonic-crystal-slab line-defect waveguides

Hisaya Oda, Kuon Inoue, Yu Tanaka, Naoki Ikeda, Yoshimasa Sugimoto, Hiroshi Ishikawa, Kiyoshi Asakawa

Appl. Phys. Lett. 90, 231102 (2007)

https://doi.org/10.1063/1.2746068

Published: June 2007

View article titled, Self-phase modulation in photonic-crystal-slab line-defect waveguides

Journal Articles

Mode identification of high-quality-factor single-defect nanocavities in quantum dot-embedded photonic crystals

Masayuki Shirane, Shunsuke Kono, Jun Ushida, Shunsuke Ohkouchi, Naoki Ikeda, Yoshimasa Sugimoto, Akihisa Tomita

J. Appl. Phys. 101, 073107 (2007)

https://doi.org/10.1063/1.2714644

Published: April 2007

View article titled, Mode identification of high-quality-factor single-defect nanocavities in quantum dot-embedded photonic crystals

Journal Articles

Effect of third-order dispersion on subpicosecond pulse propagation in photonic-crystal waveguides

Yu Tanaka, Haruhiko Kuwatsuka, Hitoshi Kawashima, Naoki Ikeda, Yoshimasa Sugimoto, Toshifumi Hasama, Hiroshi Ishikawa

Appl. Phys. Lett. 89, 131101 (2006)

https://doi.org/10.1063/1.2357152

Published: September 2006

View article titled, Effect of third-order dispersion on subpicosecond pulse propagation in photonic-crystal waveguides

Journal Articles

Design, fabrication, and characterization of a two-dimensional photonic-crystal symmetric Mach-Zehnder interferometer for optical integrated circuits

Yu Tanaka, Yoshimasa Sugimoto, Naoki Ikeda, Hitoshi Nakamura, Kyozo Kanamoto, Kiyoshi Asakawa, Kuon Inoue

Appl. Phys. Lett. 86, 141104 (2005)

https://doi.org/10.1063/1.1898431

Published: March 2005

View article titled, Design, fabrication, and characterization of a two-dimensional photonic-crystal symmetric Mach-Zehnder interferometer for optical integrated circuits

Journal Articles

Photonic bandpass filter for 1550 nm fabricated by femtosecond direct laser ablation

Ming Li, Kiyotaka Mori, Makoto Ishizuka, Xinbing Liu, Yoshimasa Sugimoto, Naoki Ikeda, Kiyoshi Asakawa

Appl. Phys. Lett. 83, 216–218 (2003)

https://doi.org/10.1063/1.1592619

Published: July 2003

View article titled, Photonic bandpass filter for 1550 nm fabricated by femtosecond direct laser ablation

Journal Articles

Fabrication and characterization of different types of two-dimensional AlGaAs photonic crystal slabs

Yoshimasa Sugimoto, Naoki Ikeda, Niclas Carlsson, Kiyoshi Asakawa, Noriko Kawai, Kuon Inoue

J. Appl. Phys. 91, 922–929 (2002)

https://doi.org/10.1063/1.1429795

Published: February 2002

View article titled, Fabrication and characterization of different types of two-dimensional AlGaAs photonic crystal slabs

NARROW

Topics

Influence of HfO₂ and SiO₂ interfacial layers on the characteristics of n-GaN/HfSiO_x capacitors using plasma-enhanced atomic layer deposition

Interface characteristics of β-Ga₂O₃/Al₂O₃/Pt capacitors after postmetallization annealing

Correlation between SiO₂ growth rate and difference in electronegativity of metal–oxide underlayers for plasma enhanced atomic layer deposition using tris(dimethylamino)silane precursor

Investigation of Al₂O₃/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique

Improvement in ferroelectricity of Hf_xZr_1−xO₂ thin films using top- and bottom-ZrO₂ nucleation layers

A photoconductive semiconductor switch driven ion beam injector for radiobiological experiments

Superluminescent diode with a broadband gain based on self-assembled InAs quantum dots and segmented contacts for an optical coherence tomography light source

Monolithically grown multi-color InAs quantum dots as a spectral-shape-controllable near-infrared broadband light source

Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer

Polarization independent visible color filter comprising an aluminum film with surface-plasmon enhanced transmission through a subwavelength array of holes

Acceleration and suppression of photoemission of GaAs quantum dots embedded in photonic crystal microcavities

Light amplification by stimulated Raman scattering in AlGaAs-based photonic-crystal line-defect waveguides

In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system

Topology optimization of waveguide bends with wide, flat bandwidth in air-bridge-type photonic crystal slabs

Self-phase modulation in photonic-crystal-slab line-defect waveguides

Mode identification of high-quality-factor single-defect nanocavities in quantum dot-embedded photonic crystals

Effect of third-order dispersion on subpicosecond pulse propagation in photonic-crystal waveguides

Design, fabrication, and characterization of a two-dimensional photonic-crystal symmetric Mach-Zehnder interferometer for optical integrated circuits

Photonic bandpass filter for 1550 nm fabricated by femtosecond direct laser ablation

Fabrication and characterization of different types of two-dimensional AlGaAs photonic crystal slabs

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