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N. V. Abrosimov
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Journal Articles

New properties of boron-oxygen dimer defect in boron-doped Czochralski silicon

L. I. Khirunenko, M. G. Sosnin, A. V. Duvanskii, N. V. Abrosimov, H. Riemann
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 135703 (2022)
https://doi.org/10.1063/5.0114809
Published: October 2022
View article titled, New properties of boron-oxygen dimer defect in boron-doped Czochralski silicon
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Journal Articles

The relaxation times of donor bound electrons in germanium

R. Kh. Zhukavin, K. A. Kovalevsky, Yu. Yu. Choporova, V. V. Tsyplenkov, S. G. Pavlov, N. V. Abrosimov, P. A. Bushuikin, N. Deßmann, B. A. Knyazev, H.-W. Hübers, V. N. Shastin
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2299, 030006 (2020)
https://doi.org/10.1063/5.0030450
Published: November 2020
View article titled, The relaxation times of donor bound electrons in germanium
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Journal Articles

Terahertz transient stimulated emission from doped silicon

Featured
S. G. Pavlov, N. Deßmann, A. Pohl, R. Kh. Zhukavin, T. O. Klaassen, N. V. Abrosimov, H. Riemann, B. Redlich, A. F. G. van der Meer, J.-M. Ortega, R. Prazeres, E. E. Orlova, A. V. Muraviev, V. N. Shastin, H.-W. Hübers
Journal: APL Photonics
APL Photonics 5, 106102 (2020)
https://doi.org/10.1063/5.0020654
Published: October 2020
View article titled, Terahertz transient stimulated emission from doped silicon
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Journal Articles

Identification of the donor and acceptor states of the bond-centered hydrogen–carbon pair in Si and diluted SiGe alloys

R. Stübner, Vl. Kolkovsky, J. Weber, N. V. Abrosimov, C. M. Stanley, D. J. Backlund, S. K. Estreicher
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 045701 (2020)
https://doi.org/10.1063/1.5135757
Published: January 2020
View article titled, Identification of the donor and acceptor states of the bond-centered hydrogen–carbon pair in Si and diluted SiGe alloys
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Journal Articles

Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon

R. Kh. Zhukavin, S. G. Pavlov, N. Stavrias, K. Saeedi, K. A. Kovalevsky, P. J. Phillips, V. V. Tsyplenkov, N. V. Abrosimov, H. Riemann, N. Deβmann, H.-W. Hübers, V. N. Shastin
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 035706 (2020)
https://doi.org/10.1063/1.5134691
Published: January 2020
View article titled, Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon
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Journal Articles

High-resolution, background-free spectroscopy of shallow-impurity transitions in semiconductors with a terahertz photomixer source

Editor’s Pick
M. Wienold, S. G. Pavlov, N. V. Abrosimov, H.-W. Hübers
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 092103 (2019)
https://doi.org/10.1063/1.5081030
Published: March 2019
View article titled, High-resolution, background-free spectroscopy of shallow-impurity transitions in semiconductors with a terahertz photomixer source
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Journal Articles

Divacancy-tin related defects in irradiated germanium

L. I. Khirunenko, M. G. Sosnin, A. V. Duvanskii, N. V. Abrosimov, H. Riemann
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 161595 (2018)
https://doi.org/10.1063/1.5010422
Published: February 2018
View article titled, Divacancy-tin related defects in irradiated germanium
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Journal Articles

Lifetime-limited, subnanosecond terahertz germanium photoconductive detectors

N. Deßmann, S. G. Pavlov, A. Pohl, N. V. Abrosimov, S. Winnerl, M. Mittendorff, R. Kh. Zhukavin, V. V. Tsyplenkov, D. V. Shengurov, V. N. Shastin, H.-W. Hübers
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 171109 (2015)
https://doi.org/10.1063/1.4918712
Published: April 2015
View article titled, Lifetime-limited, subnanosecond terahertz germanium photoconductive detectors
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Journal Articles

Low-temperature ordering caused by exchange interaction in the Si:P impurity system near the insulator - Metal phase transition

P. V. Semenikhin, A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, S. I. Goloshchapov, N. V. Abrosimov
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1610, 124–128 (2014)
https://doi.org/10.1063/1.4893522
Published: August 2014
View article titled, Low-temperature ordering caused by exchange interaction in the Si:P impurity system near the insulator - Metal phase transition
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Journal Articles

Fast, low-power manipulation of spin ensembles in superconducting microresonators

A. J. Sigillito, H. Malissa, A. M. Tyryshkin, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, K. M. Itoh, J. J. L. Morton, A. A. Houck, D. I. Schuster, S. A. Lyon
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 222407 (2014)
https://doi.org/10.1063/1.4881613
Published: June 2014
View article titled, Fast, low-power manipulation of spin ensembles in superconducting microresonators
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Journal Articles

Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n+–p structures

L. F. Makarenko, S. B. Lastovskii, F. P. Korshunov, M. Moll, I. Pintilie, N. V. Abrosimov
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1583, 123–126 (2014)
https://doi.org/10.1063/1.4865618
Published: February 2014
View article titled, Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n<sup>+</sup>–p structures
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Journal Articles

Complexes of self-interstitials with oxygen atoms in Ge

L. I. Khirunenko, Yu. V. Pomozov, M. G. Sosnin, N. V. Abrosimov, H. Riemann
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1583, 100–104 (2014)
https://doi.org/10.1063/1.4865613
Published: February 2014
View article titled, Complexes of self-interstitials with oxygen atoms in Ge
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Journal Articles

The interaction between divacancies and shallow dopants in irradiated Ge:Sn

L. I. Khirunenko, Yu. V. Pomozov, M. G. Sosnin, N. V. Abrosimov, H. Riemann
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1583, 75–79 (2014)
https://doi.org/10.1063/1.4865608
Published: February 2014
View article titled, The interaction between divacancies and shallow dopants in irradiated Ge:Sn
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Journal Articles

The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

Xinbo Yang, K. Fujiwara, N. V. Abrosimov, R. Gotoh, J. Nozawa, H. Koizumi, A. Kwasniewski, S. Uda
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 141601 (2012)
https://doi.org/10.1063/1.3698336
Published: April 2012
View article titled, The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals
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Journal Articles

Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched 28Si

M. Steger, A. Yang, T. Sekiguchi, K. Saeedi, M. L. W. Thewalt, M. O. Henry, K. Johnston, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 081301 (2011)
https://doi.org/10.1063/1.3651774
Published: October 2011
View article titled, Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched <sup>28</sup>Si
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Journal Articles

Spin-orbit coupling effect on bismuth donor lasing in stressed silicon

R. Kh. Zhukavin, K. A. Kovalevsky, V. V. Tsyplenkov, V. N. Shastin, S. G. Pavlov, H.-W. Hübers, H. Riemann, N. V. Abrosimov, A. K. Ramdas
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 171108 (2011)
https://doi.org/10.1063/1.3656023
Published: October 2011
View article titled, Spin-orbit coupling effect on bismuth donor lasing in stressed silicon
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Journal Articles

Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si

A. R. Stegner, H. Tezuka, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, M. L. W. Thewalt, K. M. Itoh, M. S. Brandt
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 032101 (2011)
https://doi.org/10.1063/1.3606548
Published: July 2011
View article titled, Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si
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Journal Articles

Optically-detected NMR of optically-hyperpolarized 31P neutral donors in 28Si

M. Steger, T. Sekiguchi, A. Yang, K. Saeedi, M. E. Hayden, M. L. W. Thewalt, K. M. Itoh, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 102411 (2011)
https://doi.org/10.1063/1.3577614
Published: May 2011
View article titled, Optically-detected NMR of optically-hyperpolarized <sup>31</sup>P neutral donors in <sup>28</sup>Si
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Journal Articles

Multifrequency terahertz lasing from codoped silicon crystals

S. G. Pavlov, R. Eichholz, N. V. Abrosimov, B. Redlich, H.-W. Hübers
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 061102 (2011)
https://doi.org/10.1063/1.3553769
Published: February 2011
View article titled, Multifrequency terahertz lasing from codoped silicon crystals
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Journal Articles

Influence of an electric field on the operation of terahertz intracenter silicon lasers

S. G. Pavlov, U. Böttger, N. V. Abrosimov, K. Irmscher, H. Riemann, H.-W. Hübers
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 033114 (2010)
https://doi.org/10.1063/1.3305807
Published: February 2010
View article titled, Influence of an electric field on the operation of terahertz intracenter silicon lasers
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