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N. Raghavan
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Journal Articles

Destructive dielectric breakdown of 2D muscovite mica

Open Access
A. Maruvada, S. J. O'Shea, J. Deng, K. Shubhakar, N. Raghavan, K. L. Pey
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 112904 (2024)
https://doi.org/10.1063/5.0222048
Published: September 2024
View articletitled, Destructive dielectric breakdown of 2D muscovite mica
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Journal Articles

Modeling crystallographic anisotropy in interfacial sliding phenomenon in nanoindentation of nanoscale Cu/Nb accumulated rolling bonding (ARB) multilayered materials

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A. S. Budiman, R. Sahay, F. E. Gunawan, C. Harito, H. Gunawan, I. Radchenko, E. Navarro, S. Escoubas, T. Cornelius, O. Thomas, N. Raghavan
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2594, 030007 (2023)
https://doi.org/10.1063/5.0126170
Published: April 2023
View articletitled, Modeling crystallographic anisotropy in interfacial sliding phenomenon in nanoindentation of nanoscale Cu/Nb accumulated rolling bonding (ARB) multilayered materials
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Journal Articles

Random telegraph noise in 2D hexagonal boron nitride dielectric films

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A. Ranjan, F. M. Puglisi, N. Raghavan, S. J. O'Shea, K. Shubhakar, P. Pavan, A. Padovani, L. Larcher, K. L. Pey
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 133505 (2018)
https://doi.org/10.1063/1.5022040
Published: March 2018
View articletitled, Random telegraph noise in 2D hexagonal boron nitride dielectric films
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Journal Articles

Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations

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R. Thamankar, F. M. Puglisi, A. Ranjan, N. Raghavan, K. Shubhakar, J. Molina, L. Larcher, A. Padovani, P. Pavan, S. J. O'Shea, K. L. Pey
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 024301 (2017)
https://doi.org/10.1063/1.4991002
Published: July 2017
View articletitled, Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations
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Journal Articles

Highly polarized single mode nanobelt laser

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P. Xu, S. Liu, M. Tang, X. Xu, X. Lin, Z. Wu, M. ZhuGe, Z. Ren, Z. Wang, X. Liu, Z. Yang, N. Raghavan, Q. Yang
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 201112 (2017)
https://doi.org/10.1063/1.4984057
Published: May 2017
View articletitled, Highly polarized single mode nanobelt laser
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Includes: Supplementary data
Journal Articles

Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy

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R. Thamankar, N. Raghavan, J. Molina, F. M. Puglisi, S. J. O'Shea, K. Shubhakar, L. Larcher, P. Pavan, A. Padovani, K. L. Pey
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 084304 (2016)
https://doi.org/10.1063/1.4941697
Published: February 2016
View articletitled, Single vacancy defect spectroscopy on HfO2 using random telegraph noise signals from scanning tunneling microscopy
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Journal Articles

On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime

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L. Goux, N. Raghavan, A. Fantini, R. Nigon, S. Strangio, R. Degraeve, G. Kar, Y. Y. Chen, F. De Stefano, V. V. Afanas'ev, M. Jurczak
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 134502 (2014)
https://doi.org/10.1063/1.4896841
Published: October 2014
View articletitled, On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime
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Journal Articles

Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications

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W. H. Liu, K. L. Pey, N. Raghavan, X. Wu, M. Bosman
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 024101 (2012)
https://doi.org/10.1063/1.3676255
Published: January 2012
View articletitled, Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications
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Journal Articles

Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal

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W. H. Liu, K. L. Pey, X. Wu, N. Raghavan, A. Padovani, L. Larcher, L. Vandelli, M. Bosman, T. Kauerauf
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 232909 (2011)
https://doi.org/10.1063/1.3669525
Published: December 2011
View articletitled, Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal
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Journal Articles

Stress migration risk on electromigration reliability in advanced narrow line copper interconnects

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A. Heryanto, K. L. Pey, Y. K. Lim, N. Raghavan, W. Liu, J. Wei, C. L. Gan, J. B. Tan
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 083702 (2011)
https://doi.org/10.1063/1.3651385
Published: October 2011
View articletitled, Stress migration risk on electromigration reliability in advanced narrow line copper interconnects
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Journal Articles

Chemical insight into origin of forming-free resistive random-access memory devices

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X. Wu, Z. Fang, K. Li, M. Bosman, N. Raghavan, X. Li, H. Y. Yu, N. Singh, G. Q. Lo, X. X. Zhang, K. L. Pey
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 133504 (2011)
https://doi.org/10.1063/1.3645623
Published: September 2011
View articletitled, Chemical insight into origin of forming-free resistive random-access memory devices
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Journal Articles

Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy

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K. Shubhakar, K. L. Pey, S. S. Kushvaha, S. J. O’Shea, N. Raghavan, M. Bosman, M. Kouda, K. Kakushima, H. Iwai
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 072902 (2011)
https://doi.org/10.1063/1.3553190
Published: February 2011
View articletitled, Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy
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Journal Articles

The effect of stress migration on electromigration in dual damascene copper interconnects

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A. Heryanto, K. L. Pey, Y. K. Lim, W. Liu, N. Raghavan, J. Wei, C. L. Gan, M. K. Lim, J. B. Tan
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 013716 (2011)
https://doi.org/10.1063/1.3531393
Published: January 2011
View articletitled, The effect of stress migration on electromigration in dual damascene copper interconnects
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Journal Articles

Resistive switching in NiSi gate metal-oxide-semiconductor transistors

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X. Li, W. H. Liu, N. Raghavan, M. Bosman, K. L. Pey
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 202904 (2010)
https://doi.org/10.1063/1.3516466
Published: November 2010
View articletitled, Resistive switching in NiSi gate metal-oxide-semiconductor transistors
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Journal Articles

Electrode material dependent breakdown and recovery in advanced high- κ gate stacks

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X. Wu, K. L. Pey, G. Zhang, P. Bai, X. Li, W. H. Liu, N. Raghavan
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 202903 (2010)
https://doi.org/10.1063/1.3429682
Published: May 2010
View articletitled, Electrode material dependent breakdown and recovery in advanced high- κ gate stacks
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Journal Articles

Role of oxygen vacancies in HfO 2 -based gate stack breakdown

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X. Wu, D. B. Migas, X. Li, M. Bosman, N. Raghavan, V. E. Borisenko, K. L. Pey
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 172901 (2010)
https://doi.org/10.1063/1.3416912
Published: April 2010
View articletitled, Role of oxygen vacancies in HfO 2 -based gate stack breakdown
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Journal Articles

Unipolar recovery of dielectric breakdown in fully silicided high- κ gate stack devices and its reliability implications

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N. Raghavan, K. L. Pey, W. H. Liu, X. Wu, X. Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 142901 (2010)
https://doi.org/10.1063/1.3374450
Published: April 2010
View articletitled, Unipolar recovery of dielectric breakdown in fully silicided high- κ gate stack devices and its reliability implications
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Journal Articles

Detection of high- κ and interfacial layer breakdown using the tunneling mechanism in a dual layer dielectric stack

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N. Raghavan, K. L. Pey, X. Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 222903 (2009)
https://doi.org/10.1063/1.3269589
Published: December 2009
View articletitled, Detection of high- κ and interfacial layer breakdown using the tunneling mechanism in a dual layer dielectric stack
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Journal Articles

Erratum: “On Verma bases for representations of sl(n, C ) ” [J. Math. Phys. 40 , 2190 (1999)]

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K. N. Raghavan, P. Sankaran
Journal: Journal of Mathematical Physics
J. Math. Phys. 41, 3302 (2000)
https://doi.org/10.1063/1.533313
Published: May 2000
View articletitled, Erratum: “On Verma bases for representations of sl(n, C ) ” [J. Math. Phys. 40 , 2190 (1999)]
Open the PDF for Erratum: “On Verma bases for representations of sl(n, C ) ” [J. Math. Phys. 40 , 2190 (1999)] in another window
Journal Articles

On Verma bases for representations of sl(n, C )

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K. N. Raghavan, P. Sankaran
Journal: Journal of Mathematical Physics
J. Math. Phys. 40, 2190–2195 (1999)
https://doi.org/10.1063/1.532859
Published: April 1999
View articletitled, On Verma bases for representations of sl(n, C )
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