1-20 of 396
N. Holonyak
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Direct and photon-assisted tunneling in resonant-cavity quantum-well light-emitting transistors

Free
Junyi Qiu, Curtis Y. Wang, Milton Feng, N. Holonyak, Jr.
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 234501 (2018)
https://doi.org/10.1063/1.5042418
Published: December 2018
View articletitled, Direct and photon-assisted tunneling in resonant-cavity quantum-well light-emitting transistors
Open the PDF for Direct and photon-assisted tunneling in resonant-cavity quantum-well light-emitting transistors in another window
Journal Articles

Resonance-free optical response of a vertical cavity transistor laser

Free
M. Feng, Cheng-Han Wu, M. K. Wu, Chao-Hsin Wu, N. Holonyak, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 121106 (2017)
https://doi.org/10.1063/1.5004133
Published: September 2017
View articletitled, Resonance-free optical response of a vertical cavity transistor laser
Open the PDF for Resonance-free optical response of a vertical cavity transistor laser in another window
Journal Articles

Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser

FeaturedFree
M. Feng, N. Holonyak, Jr., C. Y. Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 103102 (2017)
https://doi.org/10.1063/1.4989521
Published: September 2017
View articletitled, Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser
Open the PDF for Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser in another window
Journal Articles

Electro-optical hysteresis and bistability in the ring-cavity tunneling-collector transistor laser

Available to Purchase
M. Feng, N. Holonyak, Jr., M. K. Wu, F. Tan
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 153103 (2017)
https://doi.org/10.1063/1.4981881
Published: April 2017
View articletitled, Electro-optical hysteresis and bistability in the ring-cavity tunneling-collector transistor laser
Open the PDF for Electro-optical hysteresis and bistability in the ring-cavity tunneling-collector transistor laser in another window
Journal Articles

Erratum: “Microwave extraction method of radiative recombination lifetime and photon lifetimes up to 85 °C on 50 Gb/s oxide-vertical cavity surface emitting laser” [J. Appl. Phys. 120 , 223103 (2016)]

Free
C. Y. Wang, M. Liu, M. Feng, N. Holonyak, Jr.
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 029901 (2017)
https://doi.org/10.1063/1.4974001
Published: January 2017
View articletitled, Erratum: “Microwave extraction method of radiative recombination lifetime and photon lifetimes up to 85 °C on 50 Gb/s oxide-vertical cavity surface emitting laser” [J. Appl. Phys. 120 , 223103 (2016)]
Open the PDF for Erratum: “Microwave extraction method of radiative recombination lifetime and photon lifetimes up to 85 °C on 50 Gb/s oxide-vertical cavity surface emitting laser” [J. Appl. Phys. 120 , 223103 (2016)] in another window
Journal Articles

Microwave extraction method of radiative recombination and photon lifetimes up to 85 °C on 50 Gb/s oxide-vertical cavity surface emitting laser

Free
C. Y. Wang, M. Liu, M. Feng, N. Holonyak, Jr.
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 223103 (2016)
https://doi.org/10.1063/1.4971978
Published: December 2016
View articletitled, Microwave extraction method of radiative recombination and photon lifetimes up to 85 °C on 50 Gb/s oxide-vertical cavity surface emitting laser
Open the PDF for Microwave extraction method of radiative recombination and photon lifetimes up to 85 °C on 50 Gb/s oxide-vertical cavity surface emitting laser in another window
Journal Articles

Tunneling modulation of a quantum-well transistor laser

Free
M. Feng, J. Qiu, C. Y. Wang, N. Holonyak, Jr.
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 204501 (2016)
https://doi.org/10.1063/1.4967922
Published: November 2016
View articletitled, Tunneling modulation of a quantum-well transistor laser
Open the PDF for Tunneling modulation of a quantum-well transistor laser in another window
Journal Articles

Intra-cavity photon-assisted tunneling collector-base voltage-mediated electron-hole spontaneous-stimulated recombination transistor laser

Free
M. Feng, Junyi Qiu, C. Y. Wang, N. Holonyak, Jr.
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 084502 (2016)
https://doi.org/10.1063/1.4942222
Published: February 2016
View articletitled, Intra-cavity photon-assisted tunneling collector-base voltage-mediated electron-hole spontaneous-stimulated recombination transistor laser
Open the PDF for Intra-cavity photon-assisted tunneling collector-base voltage-mediated electron-hole spontaneous-stimulated recombination transistor laser in another window
Journal Articles

Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution

Free
M. Feng, E. W. Iverson, C. Y. Wang, N. Holonyak, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 181108 (2015)
https://doi.org/10.1063/1.4935121
Published: November 2015
View articletitled, Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution
Open the PDF for Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution in another window
Journal Articles

Effect of the energy barrier in the base of the transistor laser on the recombination lifetime

Available to Purchase
R. Bambery, C. Wang, J. M. Dallesasse, M. Feng, N. Holonyak, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 081117 (2014)
https://doi.org/10.1063/1.4866778
Published: February 2014
View articletitled, Effect of the energy barrier in the base of the transistor laser on the recombination lifetime
Open the PDF for Effect of the energy barrier in the base of the transistor laser on the recombination lifetime in another window
Journal Articles

Lateral feeding design and selective oxidation process in vertical cavity transistor laser

Available to Purchase
M. Liu, M. K. Wu, M. Feng, N. Holonyak, Jr.
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 163104 (2013)
https://doi.org/10.1063/1.4827855
Published: October 2013
View articletitled, Lateral feeding design and selective oxidation process in vertical cavity transistor laser
Open the PDF for Lateral feeding design and selective oxidation process in vertical cavity transistor laser in another window
Journal Articles

Relative intensity noise in high speed microcavity laser

Available to Purchase
F. Tan, M. K. Wu, M. Liu, M. Feng, N. Holonyak, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 141116 (2013)
https://doi.org/10.1063/1.4824360
Published: October 2013
View articletitled, Relative intensity noise in high speed microcavity laser
Open the PDF for Relative intensity noise in high speed microcavity laser in another window
Journal Articles

Selective oxidization cavity confinement for low threshold vertical cavity transistor laser

Available to Purchase
M. K. Wu, M. Liu, F. Tan, M. Feng, N. Holonyak, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 011104 (2013)
https://doi.org/10.1063/1.4813267
Published: July 2013
View articletitled, Selective oxidization cavity confinement for low threshold vertical cavity transistor laser
Open the PDF for Selective oxidization cavity confinement for low threshold vertical cavity transistor laser in another window
Journal Articles

The effect of ground and first excited state transitions on transistor laser relative intensity noise

Available to Purchase
F. Tan, W. Xu, X. Huang, M. Feng, N. Holonyak, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 081103 (2013)
https://doi.org/10.1063/1.4794025
Published: February 2013
View articletitled, The effect of ground and first excited state transitions on transistor laser relative intensity noise
Open the PDF for The effect of ground and first excited state transitions on transistor laser relative intensity noise in another window
Journal Articles

Oxidation of Al-bearing III-V materials: A review of key progress

Available to Purchase
J. M. Dallesasse, N. Holonyak, Jr.
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 051101 (2013)
https://doi.org/10.1063/1.4769968
Published: February 2013
View articletitled, Oxidation of Al-bearing III-V materials: A review of key progress
Open the PDF for Oxidation of Al-bearing III-V materials: A review of key progress in another window
Journal Articles

Relative intensity noise of a quantum well transistor laser

Available to Purchase
F. Tan, R. Bambery, M. Feng, N. Holonyak, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 151118 (2012)
https://doi.org/10.1063/1.4760225
Published: October 2012
View articletitled, Relative intensity noise of a quantum well transistor laser
Open the PDF for Relative intensity noise of a quantum well transistor laser in another window
Journal Articles

Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling

Available to Purchase
M. K. Wu, M. Feng, N. Holonyak, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 081102 (2012)
https://doi.org/10.1063/1.4745791
Published: August 2012
View articletitled, Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling
Open the PDF for Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling in another window
Journal Articles

Transistor laser optical and electrical linearity enhancement with collector current feedback

Available to Purchase
H. W. Then, F. Tan, M. Feng, N. Holonyak, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 221104 (2012)
https://doi.org/10.1063/1.4723874
Published: May 2012
View articletitled, Transistor laser optical and electrical linearity enhancement with collector current feedback
Open the PDF for Transistor laser optical and electrical linearity enhancement with collector current feedback in another window
Journal Articles

Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors

Available to Purchase
Y. Huang, J.-H. Ryou, R. D. Dupuis, F. Dixon, M. Feng, N. Holonyak, Jr., D. Kuciauskas
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 103502 (2011)
https://doi.org/10.1063/1.3633345
Published: September 2011
View articletitled, Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors
Open the PDF for Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors in another window
Journal Articles

Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

Available to Purchase
F. Tan, R. Bambery, M. Feng, N. Holonyak,, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 061105 (2011)
https://doi.org/10.1063/1.3622110
Published: August 2011
View articletitled, Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation
Open the PDF for Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation in another window