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N. Grandjean
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Journal Articles

Sub-20 kHz low-frequency noise near ultraviolet butt-coupled fiber Bragg grating external cavity laser diode

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R. Kervazo, G. Perin, A. Congar, L. Lablonde, R. Butté, N. Grandjean, L. Bodiou, J. Charrier, S. Trebaol
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 161102 (2024)
https://doi.org/10.1063/5.0235240
Published: October 2024
View articletitled, Sub-20 kHz low-frequency noise near ultraviolet butt-coupled fiber Bragg grating external cavity laser diode
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Journal Articles

Smooth GaN membranes by polarization-assisted electrochemical etching

Open Access
J. Ciers, M. A. Bergmann, F. Hjort, J.-F. Carlin, N. Grandjean, Å. Haglund
Journal: Applied Physics Letters
Appl. Phys. Lett. 118, 062107 (2021)
https://doi.org/10.1063/5.0034898
Published: February 2021
View articletitled, Smooth GaN membranes by polarization-assisted electrochemical etching
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Includes: Supplementary data
Journal Articles

Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range

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M. Hrytsaienko, M. Gallart, M. Ziegler, O. Crégut, S. Tamariz, R. Butté, N. Grandjean, B. Hönerlage, P. Gilliot
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 054301 (2021)
https://doi.org/10.1063/5.0038733
Published: February 2021
View articletitled, Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range
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Journal Articles

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

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L. Freter, Y. Wang, M. Schnedler, J.-F. Carlin, R. Butté, N. Grandjean, H. Eisele, R. E. Dunin-Borkowski, Ph. Ebert
Journal: Journal of Applied Physics
J. Appl. Phys. 128, 185701 (2020)
https://doi.org/10.1063/5.0020652
Published: November 2020
View articletitled, Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions
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Journal Articles

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Editor’s PickOpen Access
W. Liu, C. Haller, Y. Chen, T. Weatherley, J.-F. Carlin, G. Jacopin, R. Butté, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 222106 (2020)
https://doi.org/10.1063/5.0004321
Published: June 2020
View articletitled, Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime
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Includes: Supplementary data
Journal Articles

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

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A. Y. Polyakov, C. Haller, N. B. Smirnov, A. S. Shiko, I. V. Shchemerov, S. V. Chernykh, L. A. Alexanyan, P. B. Lagov, Yu. S. Pavlov, J.-F. Carlin, M. Mosca, R. Butté, N. Grandjean, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 125708 (2019)
https://doi.org/10.1063/1.5122314
Published: September 2019
View articletitled, Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
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Includes: Supplementary data
Journal Articles

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

Open Access
C. Haller, J.-F. Carlin, G. Jacopin, W. Liu, D. Martin, R. Butté, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 111106 (2018)
https://doi.org/10.1063/1.5048010
Published: September 2018
View articletitled, GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
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Includes: Supplementary data
Journal Articles

Alloy disorder limited mobility of InGaN two-dimensional electron gas

Open Access
P. Sohi, J.-F. Carlin, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 262101 (2018)
https://doi.org/10.1063/1.5030992
Published: June 2018
View articletitled, Alloy disorder limited mobility of InGaN two-dimensional electron gas
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Includes: Supplementary data
Journal Articles

Excited states of neutral donor bound excitons in GaN

Open Access
G. Callsen, T. Kure, M. R. Wagner, R. Butté, N. Grandjean
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 215702 (2018)
https://doi.org/10.1063/1.5028370
Published: June 2018
View articletitled, Excited states of neutral donor bound excitons in GaN
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Journal Articles

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

FeaturedScilightOpen Access
C. Haller, J.-F. Carlin, G. Jacopin, D. Martin, R. Butté, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 262101 (2017)
https://doi.org/10.1063/1.5007616
Published: December 2017
View articletitled, Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
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Journal Articles

Fermi-level pinning and intrinsic surface states of Al 1 − x In x N ( 10 1 ¯ ) surfaces

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V. Portz, M. Schnedler, L. Lymperakis, J. Neugebauer, H. Eisele, J.-F. Carlin, R. Butté, N. Grandjean, R. E. Dunin-Borkowski, Ph. Ebert
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 022104 (2017)
https://doi.org/10.1063/1.4973765
Published: January 2017
View articletitled, Fermi-level pinning and intrinsic surface states of Al 1 − x In x N ( 10 1 ¯ ) surfaces
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Journal Articles

Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy

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E. C. Young, N. Grandjean, T. E. Mates, J. S. Speck
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 212103 (2016)
https://doi.org/10.1063/1.4968586
Published: November 2016
View articletitled, Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy
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Journal Articles

Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN

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L. Lugani, M. A. Py, J.-F. Carlin, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 152102 (2016)
https://doi.org/10.1063/1.4964466
Published: October 2016
View articletitled, Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN
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Journal Articles

Strain and compositional fluctuations in Al 0.81 In 0.19 N /GaN heterostructures

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V. Portz, M. Schnedler, M. Duchamp, F.-M. Hsiao, H. Eisele, J.-F. Carlin, R. Butté, N. Grandjean, R. E. Dunin-Borkowski, Ph. Ebert
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 132102 (2016)
https://doi.org/10.1063/1.4963184
Published: September 2016
View articletitled, Strain and compositional fluctuations in Al 0.81 In 0.19 N /GaN heterostructures
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Journal Articles

Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence

Open Access
W. Liu, J.-F. Carlin, N. Grandjean, B. Deveaud, G. Jacopin
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 042101 (2016)
https://doi.org/10.1063/1.4959832
Published: July 2016
View articletitled, Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence
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Journal Articles

Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N

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L. Rigutti, L. Mancini, D. Hernández-Maldonado, W. Lefebvre, E. Giraud, R. Butté, J. F. Carlin, N. Grandjean, D. Blavette, F. Vurpillot
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 105704 (2016)
https://doi.org/10.1063/1.4943612
Published: March 2016
View articletitled, Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N
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Includes: Supplementary data
Journal Articles

Vectorial near-field imaging of a GaN based photonic crystal cavity

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F. La China, F. Intonti, N. Caselli, F. Lotti, A. Vinattieri, N. Vico Triviño, J.-F. Carlin, R. Butté, N. Grandjean, M. Gurioli
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 101110 (2015)
https://doi.org/10.1063/1.4930892
Published: September 2015
View articletitled, Vectorial near-field imaging of a GaN based photonic crystal cavity
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Journal Articles

InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

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M. Malinverni, D. Martin, N. Grandjean
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 051107 (2015)
https://doi.org/10.1063/1.4928037
Published: August 2015
View articletitled, InGaN based micro light emitting diodes featuring a buried GaN tunnel junction
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Journal Articles

Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

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M. A. Py, L. Lugani, Y. Taniyasu, J.-F. Carlin, N. Grandjean
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 185701 (2015)
https://doi.org/10.1063/1.4919846
Published: May 2015
View articletitled, Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen
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Journal Articles

Solitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold

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X. Zeng, L. Sulmoni, J.-M. Lamy, T. Stadelmann, S. Grossmann, A. C. Hoogerwerf, N. Grandjean, D. L. Boïko
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 071101 (2015)
https://doi.org/10.1063/1.4907638
Published: February 2015
View articletitled, Solitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold
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