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Journal Articles

Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes

E. Di Russo, N. Cherkashin, M. Korytov, A. E. Nikolaev, A. V. Sakharov, A. F. Tsatsulnikov, B. Bonef, I. Blum, J. Houard, G. Da Costa, D. Blavette, L. Rigutti

J. Appl. Phys. 126, 124307 (2019)

https://doi.org/10.1063/1.5113799

Published: September 2019

View article titled, Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes

Includes: Supplementary data

Journal Articles

Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

F. Stumpf, A. A. Abu Quba, P. Singer, M. Rumler, N. Cherkashin, S. Schamm-Chardon, R. Cours, M. Rommel

J. Appl. Phys. 123, 125104 (2018)

https://doi.org/10.1063/1.5022558

Published: March 2018

View article titled, Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

Journal Articles

Impact of He and H relative depth distributions on the result of sequential He⁺ and H⁺ ion implantation and annealing in silicon

N. Cherkashin, N. Daghbouj, G. Seine, A. Claverie

J. Appl. Phys. 123, 161556 (2018)

https://doi.org/10.1063/1.5012505

Published: January 2018

View article titled, Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon

Journal Articles

Effect of the order of He⁺ and H⁺ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

N. Daghbouj, N. Cherkashin, F.-X. Darras, V. Paillard, M. Fnaiech, A. Claverie

J. Appl. Phys. 119, 135308 (2016)

https://doi.org/10.1063/1.4945032

Published: April 2016

View article titled, Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Journal Articles

Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy

N. Cherkashin, N. Daghbouj, F.-X. Darras, M. Fnaiech, A. Claverie

J. Appl. Phys. 118, 245301 (2015)

https://doi.org/10.1063/1.4938108

Published: December 2015

View article titled, Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy

Journal Articles

Local stress-induced effects on AlGaAs/AlOx oxidation front shape

F. Chouchane, G. Almuneau, N. Cherkashin, A. Arnoult, G. Lacoste, C. Fontaine

Appl. Phys. Lett. 105, 041909 (2014)

https://doi.org/10.1063/1.4892094

Published: July 2014

View article titled, Local stress-induced effects on AlGaAs/AlOx oxidation front shape

Journal Articles

Effect of H-implantation in the local elastic properties of silicon crystals

S. Reboh, F. Rieutord, L. Vignoud, F. Mazen, N. Cherkashin, M. Zussy, D. Landru, C. Deguet

Appl. Phys. Lett. 103, 181911 (2013)

https://doi.org/10.1063/1.4828659

Published: November 2013

View article titled, Effect of H-implantation in the local elastic properties of silicon crystals

Journal Articles

Nanoscale organization by elastic interactions between H and He platelets in Si

S. Reboh, J. F. Barbot, M. Vallet, M. F. Beaufort, F. Rieutord, F. Mazen, N. Cherkashin, P. F. P. Fichtner, J. Grilhé

J. Appl. Phys. 114, 073517 (2013)

https://doi.org/10.1063/1.4818812

Published: August 2013

View article titled, Nanoscale organization by elastic interactions between H and He platelets in Si

Journal Articles

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

N. Cherkashin, S. Reboh, M. J. Hÿtch, A. Claverie, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, V. V. Chaldyshev

Appl. Phys. Lett. 102, 173115 (2013)

https://doi.org/10.1063/1.4804380

Published: May 2013

View article titled, Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Journal Articles

Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices

N. Cherkashin, A. Claverie, D. Sotta, J.-M. Bethoux, L. Capello, O. Kononchuk

Appl. Phys. Lett. 101, 023105 (2012)

https://doi.org/10.1063/1.4733619

Published: July 2012

View article titled, Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices

Journal Articles

Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer

F. Okba, N. Cherkashin, Z. Di, M. Nastasi, F. Rossi, A. Merabet, A. Claverie

Appl. Phys. Lett. 97, 031917 (2010)

https://doi.org/10.1063/1.3467455

Published: July 2010

View article titled, Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer

Journal Articles

On the microstructure of Si coimplanted with H + and He + ions at moderate energies

S. Reboh, F. Schaurich, A. Declemy, J. F. Barbot, M. F. Beaufort, N. Cherkashin, P. F. P. Fichtner

J. Appl. Phys. 108, 023502 (2010)

https://doi.org/10.1063/1.3459884

Published: July 2010

View article titled, On the microstructure of Si coimplanted with H + and He + ions at moderate energies

Journal Articles

End of range defects in Ge

S. Koffel, N. Cherkashin, F. Houdellier, M. J. Hytch, G. Benassayag, P. Scheiblin, A. Claverie

J. Appl. Phys. 105, 126110 (2009)

https://doi.org/10.1063/1.3153985

Published: June 2009

View article titled, End of range defects in Ge

Journal Articles

Modeling and experiments on diffusion and activation of phosphorus in germanium

P. Tsouroutas, D. Tsoukalas, I. Zergioti, N. Cherkashin, A. Claverie

J. Appl. Phys. 105, 094910 (2009)

https://doi.org/10.1063/1.3117485

Published: May 2009

View article titled, Modeling and experiments on diffusion and activation of phosphorus in germanium

Journal Articles

On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

N. Cherkashin, M. J. Hÿtch, F. Houdellier, F. Hüe, V Paillard, A. Claverie, A. Gouyé, O. Kermarrec, D. Rouchon, M. Burdin, P. Holliger

Appl. Phys. Lett. 94, 141910 (2009)

https://doi.org/10.1063/1.3116648

Published: April 2009

View article titled, On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

Journal Articles

Splitting kinetics of Si 0.8 Ge 0.2 layers implanted with H or sequentially with He and H

Phuong Nguyen, K. K. Bourdelle, C. Aulnette, F. Lallement, N. Daix, N. Daval, I. Cayrefourcq, F. Letertre, C. Mazuré, Y. Bogumilowicz, A. Tauzin, C. Deguet, N. Cherkashin, A. Claverie

J. Appl. Phys. 104, 113526 (2008)

https://doi.org/10.1063/1.3033555

Published: December 2008

View article titled, Splitting kinetics of Si 0.8 Ge 0.2 layers implanted with H or sequentially with He and H

Journal Articles

Formation and evolution of F nanobubbles in amorphous and crystalline Si

S. Boninelli, G. Impellizzeri, S. Mirabella, F. Priolo, E. Napolitani, N. Cherkashin, F. Cristiano

Appl. Phys. Lett. 93, 061906 (2008)

https://doi.org/10.1063/1.2969055

Published: August 2008

View article titled, Formation and evolution of F nanobubbles in amorphous and crystalline Si

Journal Articles

Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

S. Personnic, K. K. Bourdelle, F. Letertre, A. Tauzin, N. Cherkashin, A. Claverie, R. Fortunier, H. Klocker

J. Appl. Phys. 103, 023508 (2008)

https://doi.org/10.1063/1.2829807

Published: January 2008

View article titled, Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

Journal Articles

Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

V. Ioannou-Sougleridis, P. Dimitrakis, V. Em. Vamvakas, P. Normand, C. Bonafos, S. Schamm, N. Cherkashin, G. Ben Assayag, M. Perego, M. Fanciulli

Appl. Phys. Lett. 90, 263513 (2007)

https://doi.org/10.1063/1.2752769

Published: June 2007

View article titled, Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

Journal Articles

Time Dependence Study Of Hydrogen‐Induced Defects In Silicon During Thermal Anneals

S. Personnic, A. Tauzin, K. K. Bourdelle, F. Letertre, N. Kernevez, F. Laugier, N. Cherkashin, A. Claverie, R. Fortunier

AIP Conf. Proc. 866, 65–68 (2006)

https://doi.org/10.1063/1.2401463

Published: November 2006

View article titled, Time Dependence Study Of Hydrogen‐Induced Defects In Silicon During Thermal Anneals

NARROW

Topics

Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes

Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy

Impact of He and H relative depth distributions on the result of sequential He⁺ and H⁺ ion implantation and annealing in silicon

Effect of the order of He⁺ and H⁺ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy

Local stress-induced effects on AlGaAs/AlOx oxidation front shape

Effect of H-implantation in the local elastic properties of silicon crystals

Nanoscale organization by elastic interactions between H and He platelets in Si

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Confinement of vacancies during annealing of H implanted GaN sandwiched between two {InGaN/GaN} superlattices

Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer

On the microstructure of Si coimplanted with H + and He + ions at moderate energies

End of range defects in Ge

Modeling and experiments on diffusion and activation of phosphorus in germanium

On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates

Splitting kinetics of Si 0.8 Ge 0.2 layers implanted with H or sequentially with He and H

Formation and evolution of F nanobubbles in amorphous and crystalline Si

Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001)

Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

Time Dependence Study Of Hydrogen‐Induced Defects In Silicon During Thermal Anneals

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