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Journal Articles

1 GeV proton damage in β-Ga₂O₃

A. Y. Polyakov, I. V. Shchemerov, A. A. Vasilev, A. I. Kochkova, N. B. Smirnov, A. V. Chernykh, E. B. Yakimov, P. B. Lagov, Yu. S. Pavlov, E. M. Ivanov, O. G. Gorbatkova, A. S. Drenin, M. E. Letovaltseva, Minghan Xian, Fan Ren, Jihyun Kim, S. J. Pearton

J. Appl. Phys. 130, 185701 (2021)

https://doi.org/10.1063/5.0068306

Published: November 2021

View article titled, 1 GeV proton damage in β-Ga2O3

Includes: Supplementary data

Journal Articles

Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga₂O₃

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, A. A. Vasilev, A. I. Kochkova, A. V. Chernykh, P. B. Lagov, Yu. S. Pavlov, V. S. Stolbunov, T. V. Kulevoy, I. V. Borzykh, In-Hwan Lee, Fan Ren, S. J. Pearton

J. Appl. Phys. 130, 035701 (2021)

https://doi.org/10.1063/5.0058555

Published: July 2021

View article titled, Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga2O3

Journal Articles

Experimental estimation of electron–hole pair creation energy in β -Ga₂O₃

E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, N. B. Smirnov, A. A. Vasilev, P. S. Vergeles, E. E. Yakimov, A. V. Chernykh, F. Ren, S. J. Pearton

Appl. Phys. Lett. 118, 202106 (2021)

https://doi.org/10.1063/5.0053301

Published: May 2021

View article titled, Experimental estimation of electron–hole pair creation energy in β -Ga2O3

Journal Articles

Photosensitivity of Ga₂O₃ Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation

E. B. Yakimov, A. Y. Polyakov, I. V. Shchemerov, N. B. Smirnov, A. A. Vasilev, P. S. Vergeles, E. E. Yakimov, A. V. Chernykh, A. S. Shikoh, F. Ren, S. J. Pearton

APL Mater. 8, 111105 (2020)

https://doi.org/10.1063/5.0030105

Published: November 2020

View article titled, Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation

Includes: Supplementary data

Journal Articles

Anisotropy of hydrogen plasma effects in bulk n-type β-Ga₂O₃

A. Y. Polyakov, In-Hwan Lee, Andrew Miakonkikh, A. V. Chernykh, N. B. Smirnov, I. V. Shchemerov, A. I. Kochkova, A. A. Vasilev, S. J. Pearton

J. Appl. Phys. 127, 175702 (2020)

https://doi.org/10.1063/1.5145277

Published: May 2020

View article titled, Anisotropy of hydrogen plasma effects in bulk n-type β-Ga2O3

Journal Articles

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

A. Y. Polyakov, C. Haller, N. B. Smirnov, A. S. Shiko, I. V. Shchemerov, S. V. Chernykh, L. A. Alexanyan, P. B. Lagov, Yu. S. Pavlov, J.-F. Carlin, M. Mosca, R. Butté, N. Grandjean, S. J. Pearton

J. Appl. Phys. 126, 125708 (2019)

https://doi.org/10.1063/1.5122314

Published: September 2019

View article titled, Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Includes: Supplementary data

Journal Articles

Hydrogen plasma treatment of β -Ga₂O₃: Changes in electrical properties and deep trap spectra

A. Y. Polyakov, In-Hwan Lee, N. B. Smirnov, E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev, F. Ren, P. H. Carey, IV, S. J. Pearton

Appl. Phys. Lett. 115, 032101 (2019)

https://doi.org/10.1063/1.5108790

Published: July 2019

View article titled, Hydrogen plasma treatment of β -Ga2O3: Changes in electrical properties and deep trap spectra

Journal Articles

Defects at the surface of β -Ga₂O₃ produced by Ar plasma exposure

A. Y. Polyakov, In-Hwan Lee, N. B. Smirnov, E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev, P. H. Carey, F. Ren, David J. Smith, S. J. Pearton

APL Mater. 7, 061102 (2019)

https://doi.org/10.1063/1.5109025

Published: June 2019

View article titled, Defects at the surface of β -Ga2O3 produced by Ar plasma exposure

Journal Articles

Deep trap analysis in green light emitting diodes: Problems and solutions

A. Y. Polyakov, N. M. Shmidt, N. B. Smirnov, I. V. Shchemerov, E. I. Shabunina, N. A. Tal’nishnih, In-Hwan Lee, L. A. Alexanyan, S. A. Tarelkin, S. J. Pearton

J. Appl. Phys. 125, 215701 (2019)

https://doi.org/10.1063/1.5093723

Published: June 2019

View article titled, Deep trap analysis in green light emitting diodes: Problems and solutions

Journal Articles

Deep trap spectra of Sn-doped α -Ga₂O₃ grown by halide vapor phase epitaxy on sapphire

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, V. I. Nikolaev, S. I. Stepanov, A. I. Pechnikov, A. V. Chernykh, K. D. Shcherbachev, A. S. Shikoh, A. Kochkova, A. A. Vasilev, S. J. Pearton

APL Mater. 7, 051103 (2019)

https://doi.org/10.1063/1.5094787

Published: May 2019

View article titled, Deep trap spectra of Sn-doped α -Ga2O3 grown by halide vapor phase epitaxy on sapphire

Journal Articles

Deep traps and persistent photocapacitance in β-(Al_0.14 Ga_0.86)₂O₃/Ga₂O₃ heterojunctions

A. Y. Polyakov, N. B. Smirnov, I. V. Schemerov, A. V. Chernykh, E. B. Yakimov, A. I. Kochkova, Jiancheng Yang, Chaker Fares, F. Ren, S. J. Pearton

J. Appl. Phys. 125, 095702 (2019)

https://doi.org/10.1063/1.5080941

Published: March 2019

View article titled, Deep traps and persistent photocapacitance in β-(Al0.14 Ga0.86)2O3/Ga2O3 heterojunctions

Journal Articles

Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, D. S. Saranin, T. S. Le, S. I. Didenko, D. V. Kuznetsov, A. Agresti, S. Pescetelli, F. Matteocci, A. Di Carlo

Appl. Phys. Lett. 113, 263501 (2018)

https://doi.org/10.1063/1.5053845

Published: December 2018

View article titled, Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation

Includes: Supplementary data

Journal Articles

Electrical properties, structural properties, and deep trap spectra of thin α -Ga₂O₃ films grown by halide vapor phase epitaxy on basal plane sapphire substrates

Dae-Woo Jeon, Hoki Son, Jonghee Hwang, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, S. J. Pearton, In-Hwan Lee

APL Mater. 6, 121110 (2018)

https://doi.org/10.1063/1.5075718

Published: December 2018

View article titled, Electrical properties, structural properties, and deep trap spectra of thin α -Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates

Journal Articles

Electrical properties of bulk semi-insulating β-Ga₂O₃ (Fe)

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, S. J. Pearton, Fan Ren, A. V. Chernykh, A. I. Kochkova

Appl. Phys. Lett. 113, 142102 (2018)

https://doi.org/10.1063/1.5051986

Published: October 2018

View article titled, Electrical properties of bulk semi-insulating β-Ga2O3 (Fe)

Journal Articles

Hole traps and persistent photocapacitance in proton irradiated β -Ga₂O₃ films doped with Si

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, S. J. Pearton, F. Ren, A. V. Chernykh, P. B. Lagov, T. V. Kulevoy

APL Mater. 6, 096102 (2018)

https://doi.org/10.1063/1.5042646

Published: September 2018

View article titled, Hole traps and persistent photocapacitance in proton irradiated β -Ga2O3 films doped with Si

Journal Articles

Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga₂O₃

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, S. J. Pearton, Chaker Fares, Jiancheng Yang, Fan Ren, Jihyun Kim, P. B. Lagov, V. S. Stolbunov, A. Kochkova

Appl. Phys. Lett. 113, 092102 (2018)

https://doi.org/10.1063/1.5049130

Published: August 2018

View article titled, Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3

Journal Articles

Diffusion length of non-equilibrium minority charge carriers in β-Ga₂O₃ measured by electron beam induced current

E. B. Yakimov, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, Jiancheng Yang, F. Ren, Gwangseok Yang, Jihyun Kim, S. J. Pearton

J. Appl. Phys. 123, 185704 (2018)

https://doi.org/10.1063/1.5027559

Published: May 2018

View article titled, Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current

Journal Articles

Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga₂O₃

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, D. Gogova, S. A. Tarelkin, S. J. Pearton

J. Appl. Phys. 123, 115702 (2018)

https://doi.org/10.1063/1.5025916

Published: March 2018

View article titled, Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3

Journal Articles

Point defect induced degradation of electrical properties of Ga₂O₃ by 10 MeV proton damage

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, Jiancheng Yang, F. Ren, Gwangseok Yang, Jihyun Kim, A. Kuramata, S. J. Pearton

Appl. Phys. Lett. 112, 032107 (2018)

https://doi.org/10.1063/1.5012993

Published: January 2018

View article titled, Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

Journal Articles

Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, P. B. Lagov, R. A. Zinov'ev, E. B. Yakimov, K. D. Shcherbachev, S. J. Pearton

J. Appl. Phys. 122, 115704 (2017)

https://doi.org/10.1063/1.5000956

Published: September 2017

View article titled, Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

NARROW

Topics

1 GeV proton damage in β-Ga₂O₃

Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga₂O₃

Experimental estimation of electron–hole pair creation energy in β -Ga₂O₃

Photosensitivity of Ga₂O₃ Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation

Anisotropy of hydrogen plasma effects in bulk n-type β-Ga₂O₃

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Hydrogen plasma treatment of β -Ga₂O₃: Changes in electrical properties and deep trap spectra

Defects at the surface of β -Ga₂O₃ produced by Ar plasma exposure

Deep trap analysis in green light emitting diodes: Problems and solutions

Deep trap spectra of Sn-doped α -Ga₂O₃ grown by halide vapor phase epitaxy on sapphire

Deep traps and persistent photocapacitance in β-(Al_0.14 Ga_0.86)₂O₃/Ga₂O₃ heterojunctions

Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation

Electrical properties, structural properties, and deep trap spectra of thin α -Ga₂O₃ films grown by halide vapor phase epitaxy on basal plane sapphire substrates

Electrical properties of bulk semi-insulating β-Ga₂O₃ (Fe)

Hole traps and persistent photocapacitance in proton irradiated β -Ga₂O₃ films doped with Si

Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga₂O₃

Diffusion length of non-equilibrium minority charge carriers in β-Ga₂O₃ measured by electron beam induced current

Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga₂O₃

Point defect induced degradation of electrical properties of Ga₂O₃ by 10 MeV proton damage

Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

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