1-16 of 16
Minseo Park
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Monolayer 2D quantum materials subjected to gamma irradiation in high-vacuum for nuclear and space applications

Salah Elafandi, Robert Christiansen, Nurul Azam, Max Cichon, Minseo Park, Michael C. Hamilton, Masoud Mahjouri-Samani
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 213105 (2020)
https://doi.org/10.1063/5.0006919
Published: May 2020
View article titled, Monolayer 2D quantum materials subjected to gamma irradiation in high-vacuum for nuclear and space applications
Open the PDF for Monolayer 2D quantum materials subjected to gamma irradiation in high-vacuum for nuclear and space applications in another window
Journal Articles

Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs)

Min P. Khanal, Sunil Uprety, Vahid Mirkhani, Shiqiang Wang, Kosala Yapabandara, Ehsan Hassani, Tamara Isaacs-Smith, Ayayi C. Ahyi, Michael J. Bozack, Tae-Sik Oh, Minseo Park
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 215702 (2018)
https://doi.org/10.1063/1.5054034
Published: December 2018
View article titled, Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs)
Open the PDF for Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs) in another window
Journal Articles

Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors

Editor’s Pick
Min P. Khanal, Burcu Ozden, Kyunghyuk Kim, Sunil Uprety, Vahid Mirkhani, Kosala Yapabandara, Ayayi C. Ahyi, Minseo Park
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 03D107 (2017)
https://doi.org/10.1116/1.4979976
Published: April 2017
View article titled, Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors
Open the PDF for Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors in another window
Journal Articles

Study of device instability of bottom-gate ZnO transistors with sol–gel derived channel layers

Kosala Yapabandara, Vahid Mirkhani, Muhammad Shehzad Sultan, Burcu Ozden, Min P. Khanal, Minseo Park, Shiqiang Wang, Michael C. Hamilton, Yoonsung Chung, Dong-Joo Kim, Mobbassar Hassan Sk
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 35, 03D104 (2017)
https://doi.org/10.1116/1.4979321
Published: March 2017
View article titled, Study of device instability of bottom-gate ZnO transistors with sol–gel derived channel layers
Open the PDF for Study of device instability of bottom-gate ZnO transistors with sol–gel derived channel layers in another window
Journal Articles

Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Appl. Phys. Lett. 105 , 172105 (2014)]

Burcu Ozden, Chungman Yang, Fei Tong, Min P. Khanal, Vahid Mirkhani, Mobbassar Hassan Sk, Ayayi Claude Ahyi, Minseo Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 219902 (2015)
https://doi.org/10.1063/1.4921965
Published: May 2015
View article titled, Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Appl. Phys. Lett. 105 , 172105 (2014)]
Open the PDF for Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Appl. Phys. Lett. 105 , 172105 (2014)] in another window
Journal Articles

Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

Burcu Ozden, Chungman Yang, Fei Tong, Min P. Khanal, Vahid Mirkhani, Mobbassar Hassan Sk, Ayayi Claude Ahyi, Minseo Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 172105 (2014)
https://doi.org/10.1063/1.4900869
Published: October 2014
View article titled, Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si
Open the PDF for Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si in another window
Journal Articles

Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection

Resham Thapa, Siddharth Alur, Kyusang Kim, Fei Tong, Yogesh Sharma, Moonil Kim, Claude Ahyi, Jing Dai, Jong Wook Hong, Michael Bozack, John Williams, Ahjeong Son, Amir Dabiran, Minseo Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 232109 (2012)
https://doi.org/10.1063/1.4727895
Published: June 2012
View article titled, Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection
Open the PDF for Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection in another window
Journal Articles

Raman analysis of longitudinal optical phonon-plasmon coupled modes of aligned ZnO nanorods

An-Jen Cheng, Yonhua Tzeng, Hui Xu, Siddharth Alur, Yaqi Wang, Minseo Park, Tsung-hsueh Wu, Curtis Shannon, Dong-Joo Kim, Dake Wang
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 073104 (2009)
https://doi.org/10.1063/1.3093877
Published: April 2009
View article titled, Raman analysis of longitudinal optical phonon-plasmon coupled modes of aligned ZnO nanorods
Open the PDF for Raman analysis of longitudinal optical phonon-plasmon coupled modes of aligned ZnO nanorods in another window
Journal Articles

Thermal chemical vapor deposition growth of zinc oxide nanostructures for dye-sensitized solar cell fabrication

An-Jen Cheng, Yonhua Tzeng, Yi Zhou, Minseo Park, Tsung-hsueh Wu, Curtis Shannon, Dake Wang, Wonwoo Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 092113 (2008)
https://doi.org/10.1063/1.2889502
Published: March 2008
View article titled, Thermal chemical vapor deposition growth of zinc oxide nanostructures for dye-sensitized solar cell fabrication
Open the PDF for Thermal chemical vapor deposition growth of zinc oxide nanostructures for dye-sensitized solar cell fabrication in another window
Journal Articles

Fabrication and device characteristics of Schottky-type bulk GaN-based “visible-blind” ultraviolet photodetectors

Yi Zhou, Claude Ahyi, Chin-Che Tin, John Williams, Minseo Park, Dong-Joo Kim, An-Jen Cheng, Dake Wang, Andrew Hanser, Edward A. Preble, N. Mark Williams, Keith Evans
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 121118 (2007)
https://doi.org/10.1063/1.2715114
Published: March 2007
View article titled, Fabrication and device characteristics of Schottky-type bulk GaN-based “visible-blind” ultraviolet photodetectors
Open the PDF for Fabrication and device characteristics of Schottky-type bulk GaN-based “visible-blind” ultraviolet photodetectors in another window
Journal Articles

Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier

Yi Zhou, Dake Wang, Claude Ahyi, Chin-Che Tin, John Williams, Minseo Park, N. Mark Williams, Andrew Hanser, Edward A. Preble
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 024506 (2007)
https://doi.org/10.1063/1.2425004
Published: January 2007
View article titled, Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier
Open the PDF for Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier in another window
Journal Articles

Electrical characteristics of bulk GaN -based Schottky rectifiers with ultrafast reverse recovery

Yi Zhou, Mingyu Li, Dake Wang, Claude Ahyi, Chin-Che Tin, John Williams, Minseo Park, N. Mark Williams, Andrew Hanser
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 113509 (2006)
https://doi.org/10.1063/1.2186368
Published: March 2006
View article titled, Electrical characteristics of bulk GaN -based Schottky rectifiers with ultrafast reverse recovery
Open the PDF for Electrical characteristics of bulk GaN -based Schottky rectifiers with ultrafast reverse recovery in another window
Journal Articles

Optical properties of single droplet of photonic crystal assembled by ink-jet printing

Dake Wang, Minseo Park, Jungho Park, Jooho Moon
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 241114 (2005)
https://doi.org/10.1063/1.1949279
Published: June 2005
View article titled, Optical properties of single droplet of photonic crystal assembled by ink-jet printing
Open the PDF for Optical properties of single droplet of photonic crystal assembled by ink-jet printing in another window
Journal Articles

X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy

Minseo Park, J.-P. Maria, J. J. Cuomo, Y. C. Chang, J. F. Muth, R. M. Kolbas, R. J. Nemanich, E. Carlson, J. Bumgarner
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 1797–1799 (2002)
https://doi.org/10.1063/1.1506781
Published: September 2002
View article titled, X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy
Open the PDF for X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy in another window
Journal Articles

Optical characterization of wide band gap amorphous semiconductors (a- Si:C:H ): Effect of hydrogen dilution

Minseo Park, C. W. Teng, V. Sakhrani, M. B. McLaurin, R. M. Kolbas, R. C. Sanwald, R. J. Nemanich, J. J. Hren, J. J. Cuomo
Journal: Journal of Applied Physics
J. Appl. Phys. 89, 1130–1137 (2001)
https://doi.org/10.1063/1.1332421
Published: January 2001
View article titled, Optical characterization of wide band gap amorphous semiconductors (a- Si:C:H ): Effect of hydrogen dilution
Open the PDF for Optical characterization of wide band gap amorphous semiconductors (a- Si:C:H ): Effect of hydrogen dilution in another window
Journal Articles

Secondary electron emission patterning of diamond with hydrogen and oxygen plasmas

Minseo Park, W. B. Choi, S. K. Streiffer, John J. Hren, Jerome J. Cuomo
Journal: Applied Physics Letters
Appl. Phys. Lett. 72, 2580–2582 (1998)
https://doi.org/10.1063/1.121424
Published: May 1998
View article titled, Secondary electron emission patterning of diamond with hydrogen and oxygen plasmas
Open the PDF for Secondary electron emission patterning of diamond with hydrogen and oxygen plasmas in another window