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Michael E. Liao
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Journal Articles

Thermal transport and structural improvements due to annealing of wafer bonded β-Ga2O3|4H-SiC

Michael E. Liao, Kenny Huynh, Zhe Cheng, Jingjing Shi, Samuel Graham, Mark S. Goorsky
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063203 (2023)
https://doi.org/10.1116/6.0002693
Published: September 2023
View article titled, Thermal transport and structural improvements due to annealing of wafer bonded β-Ga<sub>2</sub>O<sub>3</sub>|4H-SiC
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Journal Articles

Microstructural evolution of extended defects in 25  μ m thick GaN homo-epitaxial layers

Michael E. Liao, Nadeemullah A. Mahadik, James C. Gallagher, Brendan P. Gunning, Robert J. Kaplar, Travis J. Anderson
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 242101 (2023)
https://doi.org/10.1063/5.0152720
Published: June 2023
View article titled, Microstructural evolution of extended defects in 25  <em>μ</em> m thick GaN homo-epitaxial layers
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Journal Articles

Origins of epitaxial macro-terraces and macro-steps on GaN substrates

Michael E. Liao, William L. Olsen, Kenny Huynh, Dorian P. Luccioni, Yekan Wang, XianRong Huang, Michael J. Wojcik, Andrew A. Allerman, Mark S. Goorsky
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 185701 (2023)
https://doi.org/10.1063/5.0147667
Published: May 2023
View article titled, Origins of epitaxial macro-terraces and macro-steps on GaN substrates
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Journal Articles

Depth-dependent recovery of thermal conductivity after recrystallization of amorphous silicon

Kenny Huynh, Yekan Wang, Michael E. Liao, Thomas Pfeifer, John Tomko, Ethan Scott, Khalid Hattar, Patrick E. Hopkins, Mark S. Goorsky
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 135101 (2023)
https://doi.org/10.1063/5.0133548
Published: April 2023
View article titled, Depth-dependent recovery of thermal conductivity after recrystallization of amorphous silicon
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Journal Articles

Optimization of chemical mechanical polishing of (010) β-Ga2O3

Michael E. Liao, Kenny Huynh, Lezli Matto, Dorian P. Luccioni, Mark S. Goorsky
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 013205 (2023)
https://doi.org/10.1116/6.0002241
Published: January 2023
View article titled, Optimization of chemical mechanical polishing of (010) β-Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

Surface reaction dependence of molecular beam epitaxy grown aluminum on various orientations of β-Ga2O3

Kenny Huynh, Michael E. Liao, Akhil Mauze, Takeki Itoh, Xingxu Yan, James S. Speck, Xiaoqing Pan, Mark S. Goorsky
Journal: APL Materials
APL Mater. 10, 011110 (2022)
https://doi.org/10.1063/5.0069958
Published: January 2022
View article titled, Surface reaction dependence of molecular beam epitaxy grown aluminum on various orientations of <em>β</em>-Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

A refined model for epitaxial tilt of elastically strained epilayers grown on miscut substrates

Michael E. Liao, Mark S. Goorsky
Journal: Journal of Applied Physics
J. Appl. Phys. 129, 025105 (2021)
https://doi.org/10.1063/5.0020313
Published: January 2021
View article titled, A refined model for epitaxial tilt of elastically strained epilayers grown on miscut substrates
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Journal Articles

Coefficients of thermal expansion of single crystalline β -Ga2O3 and in-plane thermal strain calculations of various materials combinations with β -Ga2O3

Michael E. Liao, Chao Li, Hsuan Ming Yu, Eva Rosker, Marko J. Tadjer, Karl D. Hobart, Mark S. Goorsky
Journal: APL Materials
APL Mater. 7, 022517 (2019)
https://doi.org/10.1063/1.5054327
Published: December 2018
View article titled, Coefficients of thermal expansion of single crystalline β -Ga<sub>2</sub>O<sub>3</sub> and in-plane thermal strain calculations of various materials combinations with β -Ga<sub>2</sub>O<sub>3</sub>
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