Page 1 | Search Results | AIP Publishing

Skip to Main Content

Skip Nav Destination

1-3 of 3

Sort by

Sort Order Select

Journal Articles

The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices

Junbo Liu, Wensong Zou, Jiawei Chen, Mengyuan Hua, Di Lu, Jun Ma

Appl. Phys. Lett. 123, 112105 (2023)

https://doi.org/10.1063/5.0155073

Published: September 2023

View article titled, The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices

Journal Articles

Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel

Xiangbin Cai, Mengyuan Hua, Zhaofu Zhang, Song Yang, Zheyang Zheng, Yuan Cai, Kevin J. Chen, Ning Wang

Appl. Phys. Lett. 114, 053109 (2019)

https://doi.org/10.1063/1.5078767

Published: February 2019

View article titled, Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel

Journal Articles

O₃-sourced atomic layer deposition of high quality Al₂O₃ gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors

Sen Huang, Xinyu Liu, Ke Wei, Guoguo Liu, Xinhua Wang, Bing Sun, Xuelin Yang, Bo Shen, Cheng Liu, Shenghou Liu, Mengyuan Hua, Shu Yang, Kevin J. Chen

Appl. Phys. Lett. 106, 033507 (2015)

https://doi.org/10.1063/1.4906601

Published: January 2015

View article titled, O<sub>3</sub>-sourced atomic layer deposition of high quality Al<sub>2</sub>O<sub>3</sub> gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors