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Journal Articles

Elastic strain engineered nanomechanical GaN resonators with thermoelastic dissipation dilution up to 600 K

Huanying Sun, Liwen Sang, Xiulin Shen, Xuelin Yang, Tiefu Li, J. Q. You, Bo Shen, Meiyong Liao

J. Appl. Phys. 131, 054502 (2022)

https://doi.org/10.1063/5.0080227

Published: February 2022

View article titled, Elastic strain engineered nanomechanical GaN resonators with thermoelastic dissipation dilution up to 600 K

Includes: Supplementary data

Journal Articles

Polarization-induced hole doping for long-wavelength In-rich InGaN solar cells

Liwen Sang, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Xuelin Yang, Bo Shen

Appl. Phys. Lett. 119, 202103 (2021)

https://doi.org/10.1063/5.0071506

Published: November 2021

View article titled, Polarization-induced hole doping for long-wavelength In-rich InGaN solar cells

Journal Articles

Highly efficient diamond electromechanical transducer based on released metal–oxide–semiconductor structure

Meiyong Liao, Liwen Sang, Huanying Sun, Tiefu Li, Satoshi Koizumi

Appl. Phys. Lett. 119, 073504 (2021)

https://doi.org/10.1063/5.0058646

Published: August 2021

View article titled, Highly efficient diamond electromechanical transducer based on released metal–oxide–semiconductor structure

Journal Articles

Boosting the doping efficiency of Mg in p-GaN grown on the free-standing GaN substrates

Liwen Sang, Bing Ren, Raimu Endo, Takuya Masuda, Hideyuki Yasufuku, Meiyong Liao, Toshihide Nabatame, Masatomo Sumiya, Yasuo Koide

Appl. Phys. Lett. 115, 172103 (2019)

https://doi.org/10.1063/1.5124904

Published: October 2019

View article titled, Boosting the doping efficiency of Mg in p-GaN grown on the free-standing GaN substrates

Includes: Supplementary data

Journal Articles

Suppression in the electrical hysteresis by using CaF₂ dielectric layer for p-GaN MIS capacitors

Liwen Sang, Bing Ren, Meiyong Liao, Yasuo Koide, Masatomo Sumiya

J. Appl. Phys. 123, 161423 (2018)

https://doi.org/10.1063/1.5010952

Published: March 2018

View article titled, Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors

Journal Articles

A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO₂/diamond interface

Kongping Wu, Meiyong Liao, Liwen Sang, Jiangwei Liu, Masataka Imura, Haitao Ye, Yasuo Koide

J. Appl. Phys. 123, 161599 (2018)

https://doi.org/10.1063/1.5002176

Published: February 2018

View article titled, A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface

Journal Articles

Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano

Appl. Phys. Lett. 111, 122102 (2017)

https://doi.org/10.1063/1.4994627

Published: September 2017

View article titled, Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Journal Articles

Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel

Masataka Imura, Ryan G. Banal, Meiyong Liao, Jiangwei Liu, Takashi Aizawa, Akihiro Tanaka, Hideo Iwai, Takaaki Mano, Yasuo Koide

J. Appl. Phys. 121, 025702 (2017)

https://doi.org/10.1063/1.4972979

Published: January 2017

View article titled, Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel

Journal Articles

Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF₂/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy

Kexiong Zhang, Meiyong Liao, Masatomo Sumiya, Yasuo Koide, Liwen Sang

J. Appl. Phys. 120, 185305 (2016)

https://doi.org/10.1063/1.4967394

Published: November 2016

View article titled, Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy

Journal Articles

Assembly of a high-dielectric constant thin TiO_x layer directly on H-terminated semiconductor diamond

Jing Zhao, Jiangwei Liu, Liwen Sang, Meiyong Liao, David Coathup, Masataka Imura, Baogui Shi, Changzhi Gu, Yasuo Koide, Haitao Ye

Appl. Phys. Lett. 108, 012105 (2016)

https://doi.org/10.1063/1.4939650

Published: January 2016

View article titled, Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond

Journal Articles

InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

Liwen Sang, Meiyong Liao, Yasuo Koide, Masatomo Sumiya

J. Appl. Phys. 117, 105706 (2015)

https://doi.org/10.1063/1.4914908

Published: March 2015

View article titled, InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

Journal Articles

Impedance analysis of Al₂O₃/H-terminated diamond metal-oxide-semiconductor structures

Meiyong Liao, Jiangwei Liu, Liwen Sang, David Coathup, Jiangling Li, Masataka Imura, Yasuo Koide, Haitao Ye

Appl. Phys. Lett. 106, 083506 (2015)

https://doi.org/10.1063/1.4913597

Published: February 2015

View article titled, Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

Includes: Supplementary data

Journal Articles

Energy dissipation in micron- and submicron-thick single crystal diamond mechanical resonators

Meiyong Liao, Masaya Toda, Liwen Sang, Shunichi Hishita, Shuji Tanaka, Yasuo Koide

Appl. Phys. Lett. 105, 251904 (2014)

https://doi.org/10.1063/1.4904990

Published: December 2014

View article titled, Energy dissipation in micron- and submicron-thick single crystal diamond mechanical resonators

Includes: Supplementary data

Journal Articles

Systematic investigation of surface and bulk electronic structure of undoped In-polar InN epilayers by hard X-ray photoelectron spectroscopy

Masataka Imura, Shunsuke Tsuda, Takahiro Nagata, Hiroyuki Takeda, Meiyong Liao, AnLi Yang, Yoshiyuki Yamashita, Hideki Yoshikawa, Yasuo Koide, Keisuke Kobayashi, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Tsutomu Araki, Yasushi Nanishi

J. Appl. Phys. 114, 033505 (2013)

https://doi.org/10.1063/1.4812570

Published: July 2013

View article titled, Systematic investigation of surface and bulk electronic structure of undoped In-polar InN epilayers by hard X-ray photoelectron spectroscopy

Journal Articles

Integration of high-dielectric constant Ta₂O₅ oxides on diamond for power devices

Shaoheng Cheng, Liwen Sang, Meiyong Liao, Jiangwei Liu, Masataka Imura, Hongdong Li, Yasuo Koide

Appl. Phys. Lett. 101, 232907 (2012)

https://doi.org/10.1063/1.4770059

Published: December 2012

View article titled, Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices

Journal Articles

Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer

Liwen Sang, Meiyong Liao, Naoki Ikeda, Yasuo Koide, Masatomo Sumiya

Appl. Phys. Lett. 99, 161109 (2011)

https://doi.org/10.1063/1.3654155

Published: October 2011

View article titled, Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer

Journal Articles

High-temperature ultraviolet detection based on InGaN Schottky photodiodes

Liwen Sang, Meiyong Liao, Yasuo Koide, Masatomo Sumiya

Appl. Phys. Lett. 99, 031115 (2011)

https://doi.org/10.1063/1.3615291

Published: July 2011

View article titled, High-temperature ultraviolet detection based on InGaN Schottky photodiodes

Journal Articles

High-performance metal-semiconductor-metal InGaN photodetectors using CaF 2 as the insulator

Liwen Sang, Meiyong Liao, Yasuo Koide, Masatomo Sumiya

Appl. Phys. Lett. 98, 103502 (2011)

https://doi.org/10.1063/1.3562326

Published: March 2011

View article titled, High-performance metal-semiconductor-metal InGaN photodetectors using CaF 2 as the insulator

Journal Articles

Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn 2 GeO 4 nanowire

Chun Li, Yoshio Bando, Meiyong Liao, Yasuo Koide, Dmitri Golberg

Appl. Phys. Lett. 97, 161102 (2010)

https://doi.org/10.1063/1.3491212

Published: October 2010

View article titled, Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn 2 GeO 4 nanowire

Journal Articles

Piezoelectric Pb ( Zr 0.52 Ti 0.48 ) O 3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

Meiyong Liao, Yasuhito Gotoh, Hiroshi Tsuji, Kiyomi Nakajima, Masataka Imura, Yasuo Koide

J. Appl. Phys. 107, 024101 (2010)

https://doi.org/10.1063/1.3282706

Published: January 2010

View article titled, Piezoelectric Pb ( Zr 0.52 Ti 0.48 ) O 3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

NARROW

Topics

Elastic strain engineered nanomechanical GaN resonators with thermoelastic dissipation dilution up to 600 K

Polarization-induced hole doping for long-wavelength In-rich InGaN solar cells

Highly efficient diamond electromechanical transducer based on released metal–oxide–semiconductor structure

Boosting the doping efficiency of Mg in p-GaN grown on the free-standing GaN substrates

Suppression in the electrical hysteresis by using CaF₂ dielectric layer for p-GaN MIS capacitors

A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO₂/diamond interface

Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel

Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF₂/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy

Assembly of a high-dielectric constant thin TiO_x layer directly on H-terminated semiconductor diamond

InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties

Impedance analysis of Al₂O₃/H-terminated diamond metal-oxide-semiconductor structures

Energy dissipation in micron- and submicron-thick single crystal diamond mechanical resonators

Systematic investigation of surface and bulk electronic structure of undoped In-polar InN epilayers by hard X-ray photoelectron spectroscopy

Integration of high-dielectric constant Ta₂O₅ oxides on diamond for power devices

Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer

High-temperature ultraviolet detection based on InGaN Schottky photodiodes

High-performance metal-semiconductor-metal InGaN photodetectors using CaF 2 as the insulator

Visible-blind deep-ultraviolet Schottky photodetector with a photocurrent gain based on individual Zn 2 GeO 4 nanowire

Piezoelectric Pb ( Zr 0.52 Ti 0.48 ) O 3 thin films on single crystal diamond: Structural, electrical, dielectric, and field-effect-transistor properties

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