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1-20 of 36
Meiyong Liao
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Journal Articles
Surface desorption properties of hydrogen-terminated diamond detected by micromechanical resonator
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 126, 221901 (2025)
Published: June 2025
Journal Articles
Journal Articles
Journal Articles
Elastic strain engineered nanomechanical GaN resonators with thermoelastic dissipation dilution up to 600 K
Available to Purchase
Journal:
Journal of Applied Physics
J. Appl. Phys. 131, 054502 (2022)
Published: February 2022
Includes: Supplementary data
Journal Articles
Polarization-induced hole doping for long-wavelength In-rich InGaN solar cells
Journal:
Applied Physics Letters
Appl. Phys. Lett. 119, 202103 (2021)
Published: November 2021
Journal Articles
Highly efficient diamond electromechanical transducer based on released metal–oxide–semiconductor structure
Available to Purchase
Journal:
Applied Physics Letters
Appl. Phys. Lett. 119, 073504 (2021)
Published: August 2021
Journal Articles
Boosting the doping efficiency of Mg in p-GaN grown on the free-standing GaN substrates
Available to PurchaseLiwen Sang, Bing Ren, Raimu Endo, Takuya Masuda, Hideyuki Yasufuku, Meiyong Liao, Toshihide Nabatame, Masatomo Sumiya, Yasuo Koide
Journal:
Applied Physics Letters
Appl. Phys. Lett. 115, 172103 (2019)
Published: October 2019
Includes: Supplementary data
Journal Articles
Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors
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Journal:
Journal of Applied Physics
J. Appl. Phys. 123, 161423 (2018)
Published: March 2018
Journal Articles
A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface
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Journal:
Journal of Applied Physics
J. Appl. Phys. 123, 161599 (2018)
Published: February 2018
Journal Articles
Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes
Available to PurchaseLiwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano
Journal:
Applied Physics Letters
Appl. Phys. Lett. 111, 122102 (2017)
Published: September 2017
Journal Articles
Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel
Available to PurchaseMasataka Imura, Ryan G. Banal, Meiyong Liao, Jiangwei Liu, Takashi Aizawa, Akihiro Tanaka, Hideo Iwai, Takaaki Mano, Yasuo Koide
Journal:
Journal of Applied Physics
J. Appl. Phys. 121, 025702 (2017)
Published: January 2017
Journal Articles
Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy
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Journal:
Journal of Applied Physics
J. Appl. Phys. 120, 185305 (2016)
Published: November 2016
Journal Articles
Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond
Available to PurchaseJing Zhao, Jiangwei Liu, Liwen Sang, Meiyong Liao, David Coathup, Masataka Imura, Baogui Shi, Changzhi Gu, Yasuo Koide, Haitao Ye
Journal:
Applied Physics Letters
Appl. Phys. Lett. 108, 012105 (2016)
Published: January 2016
Journal Articles
InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties
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Journal:
Journal of Applied Physics
J. Appl. Phys. 117, 105706 (2015)
Published: March 2015
Journal Articles
Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures
Available to PurchaseMeiyong Liao, Jiangwei Liu, Liwen Sang, David Coathup, Jiangling Li, Masataka Imura, Yasuo Koide, Haitao Ye
Journal:
Applied Physics Letters
Appl. Phys. Lett. 106, 083506 (2015)
Published: February 2015
Includes: Supplementary data
Journal Articles
Energy dissipation in micron- and submicron-thick single crystal diamond mechanical resonators
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 105, 251904 (2014)
Published: December 2014
Includes: Supplementary data
Journal Articles
Systematic investigation of surface and bulk electronic structure of undoped In-polar InN epilayers by hard X-ray photoelectron spectroscopy
Available to PurchaseMasataka Imura, Shunsuke Tsuda, Takahiro Nagata, Hiroyuki Takeda, Meiyong Liao, AnLi Yang, Yoshiyuki Yamashita, Hideki Yoshikawa, Yasuo Koide, Keisuke Kobayashi, Tomohiro Yamaguchi, Masamitsu Kaneko, Nao Uematsu, Tsutomu Araki, Yasushi Nanishi
Journal:
Journal of Applied Physics
J. Appl. Phys. 114, 033505 (2013)
Published: July 2013
Journal Articles
Integration of high-dielectric constant Ta2O5 oxides on diamond for power devices
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 101, 232907 (2012)
Published: December 2012
Journal Articles
Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 99, 161109 (2011)
Published: October 2011
Journal Articles
High-temperature ultraviolet detection based on InGaN Schottky photodiodes
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Journal:
Applied Physics Letters
Appl. Phys. Lett. 99, 031115 (2011)
Published: July 2011
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