1-20 of 123
Masaru Hori
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Plasma processing and annealing for defect management at SiO2/Si interface

Shota Nunomura, Takayoshi Tsutsumi, Isao Sakata, Masaru Hori
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 052202 (2023)
https://doi.org/10.1116/6.0002822
Published: August 2023
View article titled, Plasma processing and annealing for defect management at SiO<sub>2</sub>/Si interface
Open the PDF for Plasma processing and annealing for defect management at SiO<sub>2</sub>/Si interface in another window
Journal Articles

Diagnostics of a nanosecond atmospheric plasma jet. Ionization waves, plasma density and electric field dynamics

Nikolay Britun, Peter Raj Dennis Christy, Vladislav Gamaleev, Shih-Nan Hsiao, Masaru Hori
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 183303 (2023)
https://doi.org/10.1063/5.0138931
Published: May 2023
View article titled, Diagnostics of a nanosecond atmospheric plasma jet. Ionization waves, plasma density and electric field dynamics
Open the PDF for Diagnostics of a nanosecond atmospheric plasma jet. Ionization waves, plasma density and electric field dynamics in another window
Includes: Supplementary data
Journal Articles

GaN damage-free cyclic etching by sequential exposure to Cl2 plasma and Ar plasma with low Ar+-ion energy at substrate temperature of 400 °C

Shohei Nakamura, Atsushi Tanide, Takahiro Kimura, Soichi Nadahara, Kenji Ishikawa, Osamu Oda, Masaru Hori
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 043302 (2023)
https://doi.org/10.1063/5.0131685
Published: January 2023
View article titled, GaN damage-free cyclic etching by sequential exposure to Cl<sub>2</sub> plasma and Ar plasma with low Ar<sup>+</sup>-ion energy at substrate temperature of 400 °C
Open the PDF for GaN damage-free cyclic etching by sequential exposure to Cl<sub>2</sub> plasma and Ar plasma with low Ar<sup>+</sup>-ion energy at substrate temperature of 400 °C in another window
Journal Articles

Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent

Airah P. Osonio, Takayoshi Tsutsumi, Yoshinari Oda, Bablu Mukherjee, Ranjit Borude, Nobuyoshi Kobayashi, Masaru Hori
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 062601 (2022)
https://doi.org/10.1116/6.0002044
Published: October 2022
View article titled, Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent
Open the PDF for Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent in another window
Journal Articles

Nanosecond-scale impulse generator for biomedical applications of atmospheric-pressure plasma technology

Vladislav Gamaleev, Naohiro Shimizu, Masaru Hori
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 93, 053503 (2022)
https://doi.org/10.1063/5.0082175
Published: May 2022
View article titled, Nanosecond-scale impulse generator for biomedical applications of atmospheric-pressure plasma technology
Open the PDF for Nanosecond-scale impulse generator for biomedical applications of atmospheric-pressure plasma technology in another window
Journal Articles

Scaffolds with isolated carbon nanowalls promote osteogenic differentiation through Runt-related transcription factor 2 and osteocalcin gene expression of osteoblast-like cells

Tomonori Ichikawa, Kenji Ishikawa, Hiromasa Tanaka, Naohiro Shimizu, Masaru Hori
Journal: AIP Advances
AIP Advances 12, 025216 (2022)
https://doi.org/10.1063/5.0075530
Published: February 2022
View article titled, Scaffolds with isolated carbon nanowalls promote osteogenic differentiation through Runt-related transcription factor 2 and osteocalcin gene expression of osteoblast-like cells
Open the PDF for Scaffolds with isolated carbon nanowalls promote osteogenic differentiation through Runt-related transcription factor 2 and osteocalcin gene expression of osteoblast-like cells in another window
Journal Articles

Plasma-assisted thermal-cyclic atomic-layer etching of tungsten and control of its selectivity to titanium nitride

Kazunori Shinoda, Nobuya Miyoshi, Hiroyuki Kobayashi, Yuko Hanaoka, Masaru Izawa, Kenji Ishikawa, Masaru Hori
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 022201 (2022)
https://doi.org/10.1116/6.0001660
Published: February 2022
View article titled, Plasma-assisted thermal-cyclic atomic-layer etching of tungsten and control of its selectivity to titanium nitride
Open the PDF for Plasma-assisted thermal-cyclic atomic-layer etching of tungsten and control of its selectivity to titanium nitride in another window
Journal Articles

Silver film etching using halogen gas plasma

Toshiyuki Sasaki, Kenichi Yoshikawa, Kazuhito Furumoto, Itsuko Sakai, Hisataka Hayashi, Makoto Sekine, Masaru Hori
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 053006 (2020)
https://doi.org/10.1116/6.0000286
Published: August 2020
View article titled, Silver film etching using halogen gas plasma
Open the PDF for Silver film etching using halogen gas plasma in another window
Journal Articles

In situ surface analysis of an ion-energy-dependent chlorination layer on GaN during cyclic etching using Ar+ ions and Cl radicals

Masaki Hasegawa, Takayoshi Tsutsumi, Atsushi Tanide, Shohei Nakamura, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 042602 (2020)
https://doi.org/10.1116/6.0000124
Published: June 2020
View article titled, <em>In situ</em> surface analysis of an ion-energy-dependent chlorination layer on GaN during cyclic etching using Ar<sup>+</sup> ions and Cl radicals
Open the PDF for <em>In situ</em> surface analysis of an ion-energy-dependent chlorination layer on GaN during cyclic etching using Ar<sup>+</sup> ions and Cl radicals in another window
Journal Articles

Study of the effect of normal load on friction coefficient and wear properties of CNx thin films

Satyananda Kar, Bibhuti Bhusan Sahu, Hiroyuki Kousaka, Jeon Geon Han, Masaru Hori
Journal: AIP Advances
AIP Advances 10, 065214 (2020)
https://doi.org/10.1063/5.0009783
Published: June 2020
View article titled, Study of the effect of normal load on friction coefficient and wear properties of CN<sub>x</sub> thin films
Open the PDF for Study of the effect of normal load on friction coefficient and wear properties of CN<sub>x</sub> thin films in another window
Journal Articles

Interaction of oxygen with polystyrene and polyethylene polymer films: A mechanistic study

Yusuke Fukunaga, Roberto C. Longo, Peter L. G. Ventzek, Barton Lane, Alok Ranjan, Gyeong S. Hwang, Gregory Hartmann, Takayoshi Tsutsumi, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Masaru Hori
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 023303 (2020)
https://doi.org/10.1063/1.5127863
Published: January 2020
View article titled, Interaction of oxygen with polystyrene and polyethylene polymer films: A mechanistic study
Open the PDF for Interaction of oxygen with polystyrene and polyethylene polymer films: A mechanistic study in another window
Journal Articles

Simulation-aided design of very-high-frequency excited nitrogen plasma confinement using a shield plate

Yasuhiro Isobe, Takayuki Sakai, Kyoichi Suguro, Naoto Miyashita, Hiroki Kondo, Kenji Ishikawa, Amalraj Frank Wilson, Naohiro Shimizu, Osamu Oda, Makoto Sekine, Masaru Hori
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 061215 (2019)
https://doi.org/10.1116/1.5114831
Published: December 2019
View article titled, Simulation-aided design of very-high-frequency excited nitrogen plasma confinement using a shield plate
Open the PDF for Simulation-aided design of very-high-frequency excited nitrogen plasma confinement using a shield plate in another window
Journal Articles

Self-limiting reactions of ammonium salt in CHF3/O2 downstream plasma for thermal-cyclic atomic layer etching of silicon nitride

Kazunori Shinoda, Nobuya Miyoshi, Hiroyuki Kobayashi, Masaru Izawa, Tomonori Saeki, Kenji Ishikawa, Masaru Hori
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 051002 (2019)
https://doi.org/10.1116/1.5111663
Published: August 2019
View article titled, Self-limiting reactions of ammonium salt in CHF<sub>3</sub>/O<sub>2</sub> downstream plasma for thermal-cyclic atomic layer etching of silicon nitride
Open the PDF for Self-limiting reactions of ammonium salt in CHF<sub>3</sub>/O<sub>2</sub> downstream plasma for thermal-cyclic atomic layer etching of silicon nitride in another window
Journal Articles

Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition

Yasuhiro Isobe, Takayuki Sakai, Naoharu Sugiyama, Ichiro Mizushima, Kyoichi Suguro, Naoto Miyashita, Yi Lu, Amalraj Frank Wilson, Dhasiyan Arun Kumar, Nobuyuki Ikarashi, Hiroki Kondo, Kenji Ishikawa, Naohiro Shimizu, Osamu Oda, Makoto Sekine, Masaru Hori
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 031201 (2019)
https://doi.org/10.1116/1.5083970
Published: April 2019
View article titled, Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition
Open the PDF for Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition in another window
Journal Articles

Effects of BCl3 addition to Cl2 gas on etching characteristics of GaN at high temperature

Atsushi Tanide, Shohei Nakamura, Akira Horikoshi, Shigeru Takatsuji, Motohiro Kohno, Kazuo Kinose, Soichi Nadahara, Kenji Ishikawa, Makoto Sekine, Masaru Hori
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 021209 (2019)
https://doi.org/10.1116/1.5082345
Published: March 2019
View article titled, Effects of BCl<sub>3</sub> addition to Cl<sub>2</sub> gas on etching characteristics of GaN at high temperature
Open the PDF for Effects of BCl<sub>3</sub> addition to Cl<sub>2</sub> gas on etching characteristics of GaN at high temperature in another window
Journal Articles

Remotely floating wire-assisted generation of high-density atmospheric pressure plasma and SF6-added plasma etching of quartz glass

Thi-Thuy-Nga Nguyen, Minoru Sasaki, Hidefumi Odaka, Takayoshi Tsutsumi, Kenji Ishikawa, Masaru Hori
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 063304 (2019)
https://doi.org/10.1063/1.5081875
Published: February 2019
View article titled, Remotely floating wire-assisted generation of high-density atmospheric pressure plasma and SF<sub>6</sub>-added plasma etching of quartz glass
Open the PDF for Remotely floating wire-assisted generation of high-density atmospheric pressure plasma and SF<sub>6</sub>-added plasma etching of quartz glass in another window
Journal Articles

Atomic layer etching of AlGaN using Cl2 and Ar gas chemistry and UV damage evaluation

Hiroyuki Fukumizu, Makoto Sekine, Masaru Hori, Koji Kanomaru, Takuo Kikuchi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 021002 (2019)
https://doi.org/10.1116/1.5063795
Published: January 2019
View article titled, Atomic layer etching of AlGaN using Cl<sub>2</sub> and Ar gas chemistry and UV damage evaluation
Open the PDF for Atomic layer etching of AlGaN using Cl<sub>2</sub> and Ar gas chemistry and UV damage evaluation in another window
Journal Articles

Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)

Frank Wilson Amalraj, Arun Kumar Dhasiyan, Yi Lu, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Nobuyuki Ikarashi, Masaru Hori
Journal: AIP Advances
AIP Advances 8, 115116 (2018)
https://doi.org/10.1063/1.5050819
Published: November 2018
View article titled, Effect of N<sub>2</sub>/H<sub>2</sub> plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)
Open the PDF for Effect of N<sub>2</sub>/H<sub>2</sub> plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in another window
Journal Articles

Dynamic analysis of reactive oxygen nitrogen species in plasma-activated culture medium by UV absorption spectroscopy

Timothy R. Brubaker, Kenji Ishikawa, Keigo Takeda, Jun-Seok Oh, Hiroki Kondo, Hiroshi Hashizume, Hiromasa Tanaka, Sean D. Knecht, Sven G. Bilén, Masaru Hori
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 213301 (2017)
https://doi.org/10.1063/1.4999256
Published: December 2017
View article titled, Dynamic analysis of reactive oxygen nitrogen species in plasma-activated culture medium by UV absorption spectroscopy
Open the PDF for Dynamic analysis of reactive oxygen nitrogen species in plasma-activated culture medium by UV absorption spectroscopy in another window
Journal Articles

Crystallization of calcium oxalate dihydrate in a buffered calcium-containing glucose solution by irradiation with non-equilibrium atmospheric pressure plasma

Naoyuki Kurake, Hiromasa Tanaka, Kenji Ishikawa, Kae Nakamura, Hiroaki Kajiyama, Fumitaka Kikkawa, Masaaki Mizuno, Yuzuru Ikehara, Masaru Hori
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 143301 (2017)
https://doi.org/10.1063/1.5006598
Published: October 2017
View article titled, Crystallization of calcium oxalate dihydrate in a buffered calcium-containing glucose solution by irradiation with non-equilibrium atmospheric pressure plasma
Open the PDF for Crystallization of calcium oxalate dihydrate in a buffered calcium-containing glucose solution by irradiation with non-equilibrium atmospheric pressure plasma in another window