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Masakazu Ichikawa
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Journal Articles

Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces

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Noriyuki Miyata, Akihiro Ohtake, Masakazu Ichikawa, Takahiro Mori, Tetsuji Yasuda
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 232104 (2014)
https://doi.org/10.1063/1.4882643
Published: June 2014
View articletitled, Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces
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Journal Articles

Luminescence properties of Si-capped β-FeSi2 nanodots epitaxially grown on Si(001) and (111) substrates

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Shogo Amari, Yoshiaki Nakamura, Masakazu Ichikawa
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 084306 (2014)
https://doi.org/10.1063/1.4867037
Published: February 2014
View articletitled, Luminescence properties of Si-capped β-FeSi2 nanodots epitaxially grown on Si(001) and (111) substrates
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Journal Articles

Nanoscale-resolved near-infrared photoabsorption spectroscopy and imaging of individual gallium antimonide quantum dots

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Nobuyasu Naruse, Yoshiaki Nakamura, Yutaka Mera, Masakazu Ichikawa, Koji Maeda
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 011803 (2014)
https://doi.org/10.1116/1.4843115
Published: December 2013
View articletitled, Nanoscale-resolved near-infrared photoabsorption spectroscopy and imaging of individual gallium antimonide quantum dots
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Journal Articles

Investigating the origin of intense photoluminescence in Si capping layer on Ge1−xSnx nanodots by transmission electron microscopy

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Jun Kikkawa, Yoshiaki Nakamura, Norihito Fujinoki, Masakazu Ichikawa
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 074302 (2013)
https://doi.org/10.1063/1.4792647
Published: February 2013
View articletitled, Investigating the origin of intense photoluminescence in Si capping layer on Ge1−xSnx nanodots by transmission electron microscopy
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Includes: Supplementary data
Journal Articles

Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure

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Kentaro Watanabe, Masakazu Ichikawa, Yoshiaki Nakamura, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 30, 021802 (2012)
https://doi.org/10.1116/1.3684985
Published: February 2012
View articletitled, Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure
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Journal Articles

Photoluminescence from Si-capped GeSn nanodots on Si substrates formed using an ultrathin SiO 2 film technique

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Yoshiaki Nakamura, Norihiko Fujinoki, Masakazu Ichikawa
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 014309 (2009)
https://doi.org/10.1063/1.3159902
Published: July 2009
View articletitled, Photoluminescence from Si-capped GeSn nanodots on Si substrates formed using an ultrathin SiO 2 film technique
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Journal Articles

Scanning tunneling microscope–cathodoluminescence measurement of the GaAs/AlGaAs heterostructure

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Kentaro Watanabe, Yoshiaki Nakamura, Masakazu Ichikawa, Shigeyuki Kuboya, Ryuji Katayama, Kentaro Onabe
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 1874–1880 (2009)
https://doi.org/10.1116/1.3155827
Published: June 2009
View articletitled, Scanning tunneling microscope–cathodoluminescence measurement of the GaAs/AlGaAs heterostructure
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Journal Articles

Fourier-transform photoabsorption spectroscopy of quantum-confinement effects in individual GeSn nanodots

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Nobuyasu Naruse, Yutaka Mera, Yoshiaki Nakamura, Masakazu Ichikawa, Koji Maeda
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 093104 (2009)
https://doi.org/10.1063/1.3093806
Published: March 2009
View articletitled, Fourier-transform photoabsorption spectroscopy of quantum-confinement effects in individual GeSn nanodots
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Journal Articles

Formation and optical properties of GaSb quantum dots epitaxially grown on Si substrates using an ultrathin SiO 2 film technique

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Yoshiaki Nakamura, Tomohiro Sugimoto, Masakazu Ichikawa
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 014308 (2009)
https://doi.org/10.1063/1.3055211
Published: January 2009
View articletitled, Formation and optical properties of GaSb quantum dots epitaxially grown on Si substrates using an ultrathin SiO 2 film technique
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Journal Articles

Electric field modulation nanospectroscopy for characterization of individual β -FeSi 2 nanodots

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Nobuyasu Naruse, Yutaka Mera, Yoshiaki Nakamura, Masakazu Ichikawa, Koji Maeda
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 074321 (2008)
https://doi.org/10.1063/1.2981062
Published: October 2008
View articletitled, Electric field modulation nanospectroscopy for characterization of individual β -FeSi 2 nanodots
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Journal Articles

The enhanced signal of subgap centers in tip-probing photoabsorption spectroscopy with an assist of a subsidiary light

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Nobuyasu Naruse, Yutaka Mera, Yoshiaki Nakamura, Masakazu Ichikawa, Koji Maeda
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 044303 (2008)
https://doi.org/10.1063/1.2872891
Published: February 2008
View articletitled, The enhanced signal of subgap centers in tip-probing photoabsorption spectroscopy with an assist of a subsidiary light
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Journal Articles

Measurements of local optical properties of Si-doped GaAs (110) surfaces using modulation scanning tunneling microscope cathodoluminescence spectroscopy

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Kentaro Watanabe, Yoshiaki Nakamura, Masakazu Ichikawa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 195–200 (2008)
https://doi.org/10.1116/1.2830640
Published: January 2008
View articletitled, Measurements of local optical properties of Si-doped GaAs (110) surfaces using modulation scanning tunneling microscope cathodoluminescence spectroscopy
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Journal Articles

Epitaxial growth of ultrahigh density Ge 1 − x Sn x quantum dots on Si (111) substrates by codeposition of Ge and Sn on ultrathin SiO 2 films

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Yoshiaki Nakamura, Akiko Masada, Sung-Pyo Cho, Nobuo Tanaka, Masakazu Ichikawa
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 124302 (2007)
https://doi.org/10.1063/1.2822271
Published: December 2007
View articletitled, Epitaxial growth of ultrahigh density Ge 1 − x Sn x quantum dots on Si (111) substrates by codeposition of Ge and Sn on ultrathin SiO 2 films
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Journal Articles

Fourier transform photoabsorption spectroscopy based on scanning tunneling microscopy

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Nobuyasu Naruse, Yutaka Mera, Yo Fukuzawa, Yoshiaki Nakamura, Masakazu Ichikawa, Koji Maeda
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 114301 (2007)
https://doi.org/10.1063/1.2817956
Published: December 2007
View articletitled, Fourier transform photoabsorption spectroscopy based on scanning tunneling microscopy
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Journal Articles

Electrical conduction of Ge nanodot arrays formed on an oxidized Si surface

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Yasuo Nakayama, Shiro Yamazaki, Hiroyuki Okino, Toru Hirahara, Iwao Matsuda, Shuji Hasegawa, Masakazu Ichikawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 123104 (2007)
https://doi.org/10.1063/1.2784181
Published: September 2007
View articletitled, Electrical conduction of Ge nanodot arrays formed on an oxidized Si surface
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Journal Articles

Quantum-confinement effect in individual Ge 1 − x Sn x quantum dots on Si(111) substrates covered with ultrathin Si O 2 films using scanning tunneling spectroscopy

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Yoshiaki Nakamura, Akiko Masada, Masakazu Ichikawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 013109 (2007)
https://doi.org/10.1063/1.2753737
Published: July 2007
View articletitled, Quantum-confinement effect in individual Ge 1 − x Sn x quantum dots on Si(111) substrates covered with ultrathin Si O 2 films using scanning tunneling spectroscopy
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Journal Articles

Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer

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Yoshiaki Nakamura, Masakazu Ichikawa, Kentaro Watanabe, Yasuhiro Hatsugai
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 153104 (2007)
https://doi.org/10.1063/1.2720756
Published: April 2007
View articletitled, Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer
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Journal Articles

Observation of the quantum-confinement effect in individual β - Fe Si 2 nanoislands epitaxially grown on Si (111) surfaces using scanning tunneling spectroscopy

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Yoshiaki Nakamura, Ryota Suzuki, Masafumi Umeno, Sung-Pyo Cho, Nobuo Tanaka, Masakazu Ichikawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 123104 (2006)
https://doi.org/10.1063/1.2349842
Published: September 2006
View articletitled, Observation of the quantum-confinement effect in individual β - Fe Si 2 nanoislands epitaxially grown on Si (111) surfaces using scanning tunneling spectroscopy
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Journal Articles

Formation of ultrahigh density and ultrasmall coherent β ‐ Fe Si 2 nanodots on Si (111) substrates using Si and Fe codeposition method

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Yoshiaki Nakamura, Yasushi Nagadomi, Sung-Pyo Cho, Nobuo Tanaka, Masakazu Ichikawa
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 044313 (2006)
https://doi.org/10.1063/1.2266322
Published: August 2006
View articletitled, Formation of ultrahigh density and ultrasmall coherent β ‐ Fe Si 2 nanodots on Si (111) substrates using Si and Fe codeposition method
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Journal Articles

Quantum regulation of Ge nanodot state by controlling barrier of the interface layer

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Yasuo Nakayama, Iwao Matsuda, Shuji Hasegawa, Masakazu Ichikawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 253102 (2006)
https://doi.org/10.1063/1.2216893
Published: June 2006
View articletitled, Quantum regulation of Ge nanodot state by controlling barrier of the interface layer
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