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Journal Articles

Wafer-scale bonded GaN–AlN with high interface thermal conductance

Man Li, Kaicheng Pan, Yijun Ge, Kenny Huynh, Mark S. Goorsky, Timothy S. Fisher, Yongjie Hu

Appl. Phys. Lett. 125, 032104 (2024)

https://doi.org/10.1063/5.0206263

Published: July 2024

View article titled, Wafer-scale bonded GaN–AlN with high interface thermal conductance

Journal Articles

Thermal transport and structural improvements due to annealing of wafer bonded β-Ga₂O₃|4H-SiC

Michael E. Liao, Kenny Huynh, Zhe Cheng, Jingjing Shi, Samuel Graham, Mark S. Goorsky

J. Vac. Sci. Technol. A 41, 063203 (2023)

https://doi.org/10.1116/6.0002693

Published: September 2023

View article titled, Thermal transport and structural improvements due to annealing of wafer bonded β-Ga2O3|4H-SiC

Journal Articles

Origins of epitaxial macro-terraces and macro-steps on GaN substrates

Michael E. Liao, William L. Olsen, Kenny Huynh, Dorian P. Luccioni, Yekan Wang, XianRong Huang, Michael J. Wojcik, Andrew A. Allerman, Mark S. Goorsky

J. Appl. Phys. 133, 185701 (2023)

https://doi.org/10.1063/5.0147667

Published: May 2023

View article titled, Origins of epitaxial macro-terraces and macro-steps on GaN substrates

Journal Articles

Depth-dependent recovery of thermal conductivity after recrystallization of amorphous silicon

Kenny Huynh, Yekan Wang, Michael E. Liao, Thomas Pfeifer, John Tomko, Ethan Scott, Khalid Hattar, Patrick E. Hopkins, Mark S. Goorsky

J. Appl. Phys. 133, 135101 (2023)

https://doi.org/10.1063/5.0133548

Published: April 2023

View article titled, Depth-dependent recovery of thermal conductivity after recrystallization of amorphous silicon

Journal Articles

Optimization of chemical mechanical polishing of (010) β-Ga₂O₃

Michael E. Liao, Kenny Huynh, Lezli Matto, Dorian P. Luccioni, Mark S. Goorsky

J. Vac. Sci. Technol. A 41, 013205 (2023)

https://doi.org/10.1116/6.0002241

Published: January 2023

View article titled, Optimization of chemical mechanical polishing of (010) β-Ga2O3

Journal Articles

Surface reaction dependence of molecular beam epitaxy grown aluminum on various orientations of β-Ga₂O₃

Kenny Huynh, Michael E. Liao, Akhil Mauze, Takeki Itoh, Xingxu Yan, James S. Speck, Xiaoqing Pan, Mark S. Goorsky

APL Mater. 10, 011110 (2022)

https://doi.org/10.1063/5.0069958

Published: January 2022

View article titled, Surface reaction dependence of molecular beam epitaxy grown aluminum on various orientations of β-Ga2O3

Journal Articles

Steady-state methods for measuring in-plane thermal conductivity of thin films for heat spreading applications

Nicholas J. Hines, Luke Yates, Brian M. Foley, Zhe Cheng, Thomas L. Bougher, Mark S. Goorsky, Karl D. Hobart, Tatyana I. Feygelson, Marko J. Tadjer, Samuel Graham

Rev. Sci. Instrum. 92, 044907 (2021)

https://doi.org/10.1063/5.0039966

Published: April 2021

View article titled, Steady-state methods for measuring in-plane thermal conductivity of thin films for heat spreading applications

Includes: Supplementary data

Journal Articles

A refined model for epitaxial tilt of elastically strained epilayers grown on miscut substrates

Michael E. Liao, Mark S. Goorsky

J. Appl. Phys. 129, 025105 (2021)

https://doi.org/10.1063/5.0020313

Published: January 2021

View article titled, A refined model for epitaxial tilt of elastically strained epilayers grown on miscut substrates

Journal Articles

Integration of polycrystalline Ga₂O₃ on diamond for thermal management

Zhe Cheng, Virginia D. Wheeler, Tingyu Bai, Jingjing Shi, Marko J. Tadjer, Tatyana Feygelson, Karl D. Hobart, Mark S. Goorsky, Samuel Graham

Appl. Phys. Lett. 116, 062105 (2020)

https://doi.org/10.1063/1.5125637

Published: February 2020

View article titled, Integration of polycrystalline Ga2O3 on diamond for thermal management

Journal Articles

Coefficients of thermal expansion of single crystalline β -Ga₂O₃ and in-plane thermal strain calculations of various materials combinations with β -Ga₂O₃

Michael E. Liao, Chao Li, Hsuan Ming Yu, Eva Rosker, Marko J. Tadjer, Karl D. Hobart, Mark S. Goorsky

APL Mater. 7, 022517 (2019)

https://doi.org/10.1063/1.5054327

Published: December 2018

View article titled, Coefficients of thermal expansion of single crystalline β -Ga2O3 and in-plane thermal strain calculations of various materials combinations with β -Ga2O3

Journal Articles

Ultrahigh vacuum dc magnetron sputter-deposition of epitaxial Pd(111)/Al₂O₃(0001) thin films

Angel Aleman, Chao Li, Hicham Zaid, Hanna Kindlund, Joshua Fankhauser, Sergey V. Prikhodko, Mark S. Goorsky, Suneel Kodambaka

J. Vac. Sci. Technol. A 36, 030602 (2018)

https://doi.org/10.1116/1.5021609

Published: March 2018

View article titled, Ultrahigh vacuum dc magnetron sputter-deposition of epitaxial Pd(111)/Al2O3(0001) thin films

Journal Articles

Grazing-incidence small angle x-ray scattering, x-ray reflectivity, and atomic force microscopy: A combined approach to assess atomic-layer-deposited Al₂O₃ dielectric films

Chao Li, Firouz Shahriarian, Mark S. Goorsky

J. Vac. Sci. Technol. A 36, 01A115 (2018)

https://doi.org/10.1116/1.5003422

Published: December 2017

View article titled, Grazing-incidence small angle x-ray scattering, x-ray reflectivity, and atomic force microscopy: A combined approach to assess atomic-layer-deposited Al2O3 dielectric films

Journal Articles

Growth and characterization of epitaxial Zr(0001) thin films on Al₂O₃(0001)

Joshua Fankhauser, Masaki Sato, Dian Yu, Abbas Ebnonnasir, Makoto Kobashi, Mark S. Goorsky, Suneel Kodambaka

J. Vac. Sci. Technol. A 34, 050606 (2016)

https://doi.org/10.1116/1.4961452

Published: August 2016

View article titled, Growth and characterization of epitaxial Zr(0001) thin films on Al2O3(0001)

Journal Articles

Selective-area growth of heavily n–doped GaAs nanostubs on Si(001) by molecular beam epitaxy

Yoon Jung Chang, Paul J. Simmonds, Brett Beekley, Mark S. Goorsky, Jason C. S. Woo

Appl. Phys. Lett. 108, 163106 (2016)

https://doi.org/10.1063/1.4947436

Published: April 2016

View article titled, Selective-area growth of heavily n–doped GaAs nanostubs on Si(001) by molecular beam epitaxy

Journal Articles

Inter-wafer bonding strength characterization by laser-induced shock waves

George Youssef, Caroline Moulet, Mark S. Goorsky, Vijay Gupta

J. Appl. Phys. 111, 094902 (2012)

https://doi.org/10.1063/1.4710987

Published: May 2012

View article titled, Inter-wafer bonding strength characterization by laser-induced shock waves

Includes: Supplementary data

Journal Articles

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction

Charles J. Reyner, Jin Wang, Kalyan Nunna, Andrew Lin, Baolai Liang, Mark S. Goorsky, D. L. Huffaker

Appl. Phys. Lett. 99, 231906 (2011)

https://doi.org/10.1063/1.3666234

Published: December 2011

View article titled, Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction

Journal Articles

Reduction of the potential energy barrier and resistance at wafer-bonded n-GaAs/n-GaAs interfaces by sulfur passivation

Michael J. Jackson, Biyun L. Jackson, Mark S. Goorsky

J. Appl. Phys. 110, 104903 (2011)

https://doi.org/10.1063/1.3662144

Published: November 2011

View article titled, Reduction of the potential energy barrier and resistance at wafer-bonded n-GaAs/n-GaAs interfaces by sulfur passivation

Journal Articles

Transfer of InP thin films from engineered porous silicon substrates

Monali B. Joshi, Mark S. Goorsky

J. Appl. Phys. 107, 024906 (2010)

https://doi.org/10.1063/1.3284942

Published: January 2010

View article titled, Transfer of InP thin films from engineered porous silicon substrates

Journal Articles

Role of ion damage on unintentional Ca incorporation during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides using N 2 ∕ Ar source gas mixtures

Michael M. Oye, Seth R. Bank, Aaron J. Ptak, Robert C. Reedy, Mark S. Goorsky, Archie L. Holmes, Jr.

J. Vac. Sci. Technol. B 26, 1058–1063 (2008)

https://doi.org/10.1116/1.2924329

Published: May 2008

View article titled, Role of ion damage on unintentional Ca incorporation during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides using N 2 ∕ Ar source gas mixtures

Journal Articles

Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers

Tae-Sik Yoon, Jian Liu, Atif M. Noori, Mark S. Goorsky, Ya-Hong Xie

Appl. Phys. Lett. 87, 012104 (2005)

https://doi.org/10.1063/1.1988986

Published: June 2005

View article titled, Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers

NARROW

Topics

Wafer-scale bonded GaN–AlN with high interface thermal conductance

Thermal transport and structural improvements due to annealing of wafer bonded β-Ga₂O₃|4H-SiC

Origins of epitaxial macro-terraces and macro-steps on GaN substrates

Depth-dependent recovery of thermal conductivity after recrystallization of amorphous silicon

Optimization of chemical mechanical polishing of (010) β-Ga₂O₃

Surface reaction dependence of molecular beam epitaxy grown aluminum on various orientations of β-Ga₂O₃

Steady-state methods for measuring in-plane thermal conductivity of thin films for heat spreading applications

A refined model for epitaxial tilt of elastically strained epilayers grown on miscut substrates

Integration of polycrystalline Ga₂O₃ on diamond for thermal management

Coefficients of thermal expansion of single crystalline β -Ga₂O₃ and in-plane thermal strain calculations of various materials combinations with β -Ga₂O₃

Ultrahigh vacuum dc magnetron sputter-deposition of epitaxial Pd(111)/Al₂O₃(0001) thin films

Grazing-incidence small angle x-ray scattering, x-ray reflectivity, and atomic force microscopy: A combined approach to assess atomic-layer-deposited Al₂O₃ dielectric films

Growth and characterization of epitaxial Zr(0001) thin films on Al₂O₃(0001)

Selective-area growth of heavily n–doped GaAs nanostubs on Si(001) by molecular beam epitaxy

Inter-wafer bonding strength characterization by laser-induced shock waves

Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction

Reduction of the potential energy barrier and resistance at wafer-bonded n-GaAs/n-GaAs interfaces by sulfur passivation

Transfer of InP thin films from engineered porous silicon substrates

Role of ion damage on unintentional Ca incorporation during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides using N 2 ∕ Ar source gas mixtures

Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers

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