1-20 of 39
Mark E. Law
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Phosphorus diffusion and deactivation during SiGe oxidation

Available to Purchase
Chappel S. Thornton, Xiao Shen, Blair Tuttle, Xuebin Li, Mark E. Law, Sokrates T. Pantelides, George T. Wang, Kevin S. Jones
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 135301 (2023)
https://doi.org/10.1063/5.0145730
Published: April 2023
View article titled, Phosphorus diffusion and deactivation during SiGe oxidation
Open the PDF for Phosphorus diffusion and deactivation during SiGe oxidation in another window
Journal Articles

Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers

Available to Purchase
Xinyi Xia, Minghan Xian, Chaker Fares, Ribhu Sharma, Mark E. Law, Fan Ren, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 063405 (2021)
https://doi.org/10.1116/6.0001347
Published: September 2021
View article titled, Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers
Open the PDF for Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers in another window
Journal Articles

Diffusion of dopants and impurities in β-Ga2O3

Editor’s PickAvailable to Purchase
Ribhu Sharma, Mark E. Law, Fan Ren, Alexander Y. Polyakov, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 060801 (2021)
https://doi.org/10.1116/6.0001307
Published: September 2021
View article titled, Diffusion of dopants and impurities in β-Ga2O3
Open the PDF for Diffusion of dopants and impurities in β-Ga2O3 in another window
Journal Articles

Effect of probe geometry during measurement of >100 A Ga2O3 vertical rectifiers

Available to Purchase
Ribhu Sharma, Minghan Xian, Chaker Fares, Mark E. Law, Marko Tadjer, Karl D. Hobart, Fan Ren, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 013406 (2021)
https://doi.org/10.1116/6.0000815
Published: December 2020
View article titled, Effect of probe geometry during measurement of >100 A Ga2O3 vertical rectifiers
Open the PDF for Effect of probe geometry during measurement of >100 A Ga2O3 vertical rectifiers in another window
Journal Articles

Design and implementation of floating field ring edge termination on vertical geometry β-Ga2O3 rectifiers

Available to Purchase
Ribhu Sharma, Minghan Xian, Mark E. Law, Marko Tadjer, Fan Ren, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 063414 (2020)
https://doi.org/10.1116/6.0000693
Published: November 2020
View article titled, Design and implementation of floating field ring edge termination on vertical geometry β-Ga2O3 rectifiers
Open the PDF for Design and implementation of floating field ring edge termination on vertical geometry β-Ga2O3 rectifiers in another window
Journal Articles

Diffusion of implanted Ge and Sn in β-Ga2O3

Free
Ribhu Sharma, Mark E. Law, Minghan Xian, Marko Tadjer, Elaf A. Anber, Daniel Foley, Andrew C. Lang, James L. Hart, James Nathaniel, Mitra L. Taheri, Fan Ren, S. J. Pearton, A. Kuramata
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 051204 (2019)
https://doi.org/10.1116/1.5118001
Published: August 2019
View article titled, Diffusion of implanted Ge and Sn in β-Ga2O3
Open the PDF for Diffusion of implanted Ge and Sn in β-Ga2O3 in another window
Journal Articles

The role of annealing ambient on diffusion of implanted Si in β -Ga2O3

Open Access
Ribhu Sharma, Mark E. Law, Chaker Fares, Marko Tadjer, Fan Ren, A. Kuramata, S. J. Pearton
Journal: AIP Advances
AIP Advances 9, 085111 (2019)
https://doi.org/10.1063/1.5115149
Published: August 2019
View article titled, The role of annealing ambient on diffusion of implanted Si in β -Ga2O3
Open the PDF for The role of annealing ambient on diffusion of implanted Si in β -Ga2O3 in another window
Journal Articles

Effects of fluorine incorporation into β-Ga2O3

Available to Purchase
Jiangcheng Yang, Chaker Fares, F. Ren, Ribhu Sharma, Erin Patrick, Mark E. Law, S. J. Pearton, Akito Kuramata
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 165706 (2018)
https://doi.org/10.1063/1.5031001
Published: April 2018
View article titled, Effects of fluorine incorporation into β-Ga2O3
Open the PDF for Effects of fluorine incorporation into β-Ga2O3 in another window
Journal Articles

Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3

Available to Purchase
Shihyun Ahn, F. Ren, Erin Patrick, Mark E. Law, S. J. Pearton, Akito Kuramata
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 242108 (2016)
https://doi.org/10.1063/1.4972265
Published: December 2016
View article titled, Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3
Open the PDF for Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3 in another window
Journal Articles

Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage

Available to Purchase
Ya-Hsi Hwang, Shun Li, Yueh-Ling Hsieh, Fan Ren, Stephen J. Pearton, Erin Patrick, Mark E. Law, David J. Smith
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 082106 (2014)
https://doi.org/10.1063/1.4866858
Published: February 2014
View article titled, Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage
Open the PDF for Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage in another window
Journal Articles

Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation

Available to Purchase
Shun Li, Ya-Hsi Hwang, Yueh-Ling Hsieh, Lei Lei, Fan Ren, Stephen J. Pearton, Erin Patrick, Mark E. Law, Camilo Velez Cuervo, David. J. Smith
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 021203 (2014)
https://doi.org/10.1116/1.4864070
Published: February 2014
View article titled, Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation
Open the PDF for Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation in another window
Journal Articles

Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

Available to Purchase
Yuyin Xi, Yueh-Ling Hsieh, Ya-Hsi Hwang, Shun Li, Fan Ren, Stephen J. Pearton, Erin Patrick, Mark E. Law, Gwangseok Yang, Hong-Yeol Kim, Jihyun Kim, Albert G. Baca, Andrew A. Allerman, Carlos A. Sanchez
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 012201 (2014)
https://doi.org/10.1116/1.4836577
Published: December 2013
View article titled, Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors
Open the PDF for Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors in another window
Journal Articles

Level set modeling of the orientation dependence of solid phase epitaxial regrowth

Available to Purchase
Saurabh Morarka, N. G. Rudawski, Mark E. Law
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 357–361 (2008)
https://doi.org/10.1116/1.2823063
Published: January 2008
View article titled, Level set modeling of the orientation dependence of solid phase epitaxial regrowth
Open the PDF for Level set modeling of the orientation dependence of solid phase epitaxial regrowth in another window
Journal Articles

Kinetics of the end of range damage dissolution in flash-assist rapid thermal processing

Available to Purchase
R. A. Camillo-Castillo, Mark E. Law, Kevin S. Jones, Ljubo Radic, R. Lindsay, S. McCoy
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 232104 (2006)
https://doi.org/10.1063/1.2201043
Published: June 2006
View article titled, Kinetics of the end of range damage dissolution in flash-assist rapid thermal processing
Open the PDF for Kinetics of the end of range damage dissolution in flash-assist rapid thermal processing in another window
Journal Articles

Modeling of B diffusion in the presence of Ge

Available to Purchase
Ljubo Radic, Antonio F. Saavedra, Kevin S. Jones, Mark E. Law
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 478–481 (2006)
https://doi.org/10.1116/1.2151905
Published: January 2006
View article titled, Modeling of B diffusion in the presence of Ge
Open the PDF for Modeling of B diffusion in the presence of Ge in another window
Journal Articles

Electrical activation in silicon-on-insulator after low energy boron implantation

Available to Purchase
Antonio F. Saavedra, Kevin S. Jones, Mark E. Law, Kevin K. Chan, Erin C. Jones
Journal: Journal of Applied Physics
J. Appl. Phys. 96, 1891–1898 (2004)
https://doi.org/10.1063/1.1769095
Published: August 2004
View article titled, Electrical activation in silicon-on-insulator after low energy boron implantation
Open the PDF for Electrical activation in silicon-on-insulator after low energy boron implantation in another window
Journal Articles

Modeling extended defect ({311} and dislocation) nucleation and evolution in silicon

Available to Purchase
Ibrahim Avci, Mark E. Law, Erik Kuryliw, Antonio F. Saavedra, Kevin S. Jones
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 2452–2460 (2004)
https://doi.org/10.1063/1.1645644
Published: March 2004
View article titled, Modeling extended defect ({311} and dislocation) nucleation and evolution in silicon
Open the PDF for Modeling extended defect ({311} and dislocation) nucleation and evolution in silicon in another window
Journal Articles

Kinetics of boron reactivation in doped silicon from Hall effect and spreading resistance techniques

Available to Purchase
Aaron D. Lilak, Mark E. Law, Ljubo Radic, Kevin S. Jones, Mark Clark
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 2244–2246 (2002)
https://doi.org/10.1063/1.1508438
Published: September 2002
View article titled, Kinetics of boron reactivation in doped silicon from Hall effect and spreading resistance techniques
Open the PDF for Kinetics of boron reactivation in doped silicon from Hall effect and spreading resistance techniques in another window
Journal Articles

Dependence of boron cluster dissolution on the annealing ambient

Available to Purchase
Ljubo Radic, Aaron D. Lilak, Mark E. Law
Journal: Applied Physics Letters
Appl. Phys. Lett. 81, 826–828 (2002)
https://doi.org/10.1063/1.1496505
Published: July 2002
View article titled, Dependence of boron cluster dissolution on the annealing ambient
Open the PDF for Dependence of boron cluster dissolution on the annealing ambient in another window
Journal Articles

Physical integrated diffusion-oxidation model for implanted nitrogen in silicon

Available to Purchase
Lahir Shaik Adam, Mark E. Law, Omer Dokumaci, Suri Hegde
Journal: Journal of Applied Physics
J. Appl. Phys. 91, 1894–1900 (2002)
https://doi.org/10.1063/1.1430537
Published: February 2002
View article titled, Physical integrated diffusion-oxidation model for implanted nitrogen in silicon
Open the PDF for Physical integrated diffusion-oxidation model for implanted nitrogen in silicon in another window