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Journal Articles

Dynamic switching operation of diamond MOSFETs with NO₂ p-type doping and Al₂O₃ gate insulation and passivation

Niloy Chandra Saha, Tomoki Shiratsuchi, Masanori Eguchi, Toshiyuki Oishi, Makoto Kasu

J. Vac. Sci. Technol. B 42, 052207 (2024)

https://doi.org/10.1116/5.0218780

Published: August 2024

View article titled, Dynamic switching operation of diamond MOSFETs with NO2 p-type doping and Al2O3 gate insulation and passivation

Journal Articles

Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β -Ga₂O₃ Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography

Sayleap Sdoeung, Yuto Otsubo, Kohei Sasaki, Akito Kuramata, Makoto Kasu

Appl. Phys. Lett. 123, 122101 (2023)

https://doi.org/10.1063/5.0170398

Published: September 2023

View article titled, Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β -Ga2O3 Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography

Journal Articles

Line-shaped defects: Origin of leakage current in halide vapor-phase epitaxial (001) β -Ga₂O₃ Schottky barrier diodes

Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Toshiyuki Oishi, Makoto Kasu

Appl. Phys. Lett. 120, 122107 (2022)

https://doi.org/10.1063/5.0088284

Published: March 2022

View article titled, Line-shaped defects: Origin of leakage current in halide vapor-phase epitaxial (001) β -Ga2O3 Schottky barrier diodes

Journal Articles

Probe-induced surface defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga₂O₃ Schottky barrier diodes

Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Makoto Kasu

Appl. Phys. Lett. 120, 092101 (2022)

https://doi.org/10.1063/5.0085057

Published: February 2022

View article titled, Probe-induced surface defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

Journal Articles

Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β -Ga₂O₃ Schottky barrier diodes

Sayleap Sdoeung, Kohei Sasaki, Satoshi Masuya, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Makoto Kasu

Appl. Phys. Lett. 118, 172106 (2021)

https://doi.org/10.1063/5.0049761

Published: April 2021

View article titled, Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β -Ga2O3 Schottky barrier diodes

Journal Articles

Growth of high-quality one-inch free-standing heteroepitaxial (001) diamond on (11 2 ¯ 0) sapphire substrate

Seong-Woo Kim, Yuki Kawamata, Ryota Takaya, Koji. Koyama, Makoto Kasu

Appl. Phys. Lett. 117, 202102 (2020)

https://doi.org/10.1063/5.0024070

Published: November 2020

View article titled, Growth of high-quality one-inch free-standing heteroepitaxial (001) diamond on (11 2 ¯ 0) sapphire substrate

Journal Articles

Observation of nitrogen species at Al₂O₃/NO₂/H-diamond interfaces by synchrotron radiation x-ray photoemission spectroscopy

Niloy Chandra Saha, Kazutoshi Takahashi, Masaki Imamura, Makoto Kasu

J. Appl. Phys. 128, 135702 (2020)

https://doi.org/10.1063/5.0024040

Published: October 2020

View article titled, Observation of nitrogen species at Al2O3/NO2/H-diamond interfaces by synchrotron radiation x-ray photoemission spectroscopy

Journal Articles

Origin of reverse leakage current path in edge-defined film-fed growth (001) β -Ga₂O₃ Schottky barrier diodes observed by high-sensitive emission microscopy

Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Toshiyuki Oishi, Makoto Kasu

Appl. Phys. Lett. 117, 022106 (2020)

https://doi.org/10.1063/5.0012794

Published: July 2020

View article titled, Origin of reverse leakage current path in edge-defined film-fed growth (001) β -Ga2O3 Schottky barrier diodes observed by high-sensitive emission microscopy

Journal Articles

Realization of direct bonding of single crystal diamond and Si substrates

Jianbo Liang, Satoshi Masuya, Makoto Kasu, Naoteru Shigekawa

Appl. Phys. Lett. 110, 111603 (2017)

https://doi.org/10.1063/1.4978666

Published: March 2017

View article titled, Realization of direct bonding of single crystal diamond and Si substrates

Journal Articles

Electronic states of NO₂-exposed H-terminated diamond/Al₂O₃ heterointerface studied by synchrotron radiation photoemission and X-ray absorption spectroscopy

Kazutoshi Takahashi, Masaki Imamura, Kazuyuki Hirama, Makoto Kasu

Appl. Phys. Lett. 104, 072101 (2014)

https://doi.org/10.1063/1.4865929

Published: February 2014

View article titled, Electronic states of NO2-exposed H-terminated diamond/Al2O3 heterointerface studied by synchrotron radiation photoemission and X-ray absorption spectroscopy

Journal Articles

Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices

Yoshitaka Taniyasu, Makoto Kasu

Appl. Phys. Lett. 99, 251112 (2011)

https://doi.org/10.1063/1.3671668

Published: December 2011

View article titled, Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices

Journal Articles

Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency

Katsumasa Kamiya, Yasuhiro Ebihara, Kenji Shiraishi, Makoto Kasu

Appl. Phys. Lett. 99, 151108 (2011)

https://doi.org/10.1063/1.3651335

Published: October 2011

View article titled, Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency

Journal Articles

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

Kazuyuki Hirama, Yoshitaka Taniyasu, Makoto Kasu

Appl. Phys. Lett. 98, 162112 (2011)

https://doi.org/10.1063/1.3574531

Published: April 2011

View article titled, AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

Journal Articles

Origin of exciton emissions from an AlN p-n junction light-emitting diode

Yoshitaka Taniyasu, Makoto Kasu

Appl. Phys. Lett. 98, 131910 (2011)

https://doi.org/10.1063/1.3574025

Published: March 2011

View article titled, Origin of exciton emissions from an AlN p-n junction light-emitting diode

Journal Articles

Electroluminescence and capacitance-voltage characteristics of single-crystal n-type AlN (0001)/p-type diamond (111) heterojunction diodes

Kazuyuki Hirama, Yoshitaka Taniyasu, Makoto Kasu

Appl. Phys. Lett. 98, 011908 (2011)

https://doi.org/10.1063/1.3533380

Published: January 2011

View article titled, Electroluminescence and capacitance-voltage characteristics of single-crystal n-type AlN (0001)/p-type diamond (111) heterojunction diodes

Journal Articles

Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy

Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu

Appl. Phys. Lett. 97, 141902 (2010)

https://doi.org/10.1063/1.3497017

Published: October 2010

View article titled, Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy

Journal Articles

Heterostructure growth of a single-crystal hexagonal AlN (0001) layer on cubic diamond (111) surface

Kazuyuki Hirama, Yoshitaka Taniyasu, Makoto Kasu

J. Appl. Phys. 108, 013528 (2010)

https://doi.org/10.1063/1.3452362

Published: July 2010

View article titled, Heterostructure growth of a single-crystal hexagonal AlN (0001) layer on cubic diamond (111) surface

Journal Articles

Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation

Yoshitaka Taniyasu, Makoto Kasu

Appl. Phys. Lett. 96, 221110 (2010)

https://doi.org/10.1063/1.3446834

Published: June 2010

View article titled, Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation

Journal Articles

Sorption properties of NO 2 gas and its strong influence on hole concentration of H-terminated diamond surfaces

Michal Kubovic, Makoto Kasu, Hiroyuki Kageshima

Appl. Phys. Lett. 96, 052101 (2010)

https://doi.org/10.1063/1.3291616

Published: February 2010

View article titled, Sorption properties of NO 2 gas and its strong influence on hole concentration of H-terminated diamond surfaces

Journal Articles

Anisotropic in-plane strains in nonpolar AlN and AlGaN ( 11 2 ¯ ) films grown on SiC ( 11 2 ¯ ) substrates

Tetsuya Akasaka, Yasuyuki Kobayashi, Makoto Kasu

Appl. Phys. Lett. 93, 161908 (2008)

https://doi.org/10.1063/1.2995994

Published: October 2008

View article titled, Anisotropic in-plane strains in nonpolar AlN and AlGaN ( 11 2 ¯ ) films grown on SiC ( 11 2 ¯ ) substrates

NARROW

Topics

Dynamic switching operation of diamond MOSFETs with NO₂ p-type doping and Al₂O₃ gate insulation and passivation

Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β -Ga₂O₃ Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography

Line-shaped defects: Origin of leakage current in halide vapor-phase epitaxial (001) β -Ga₂O₃ Schottky barrier diodes

Probe-induced surface defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga₂O₃ Schottky barrier diodes

Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β -Ga₂O₃ Schottky barrier diodes

Growth of high-quality one-inch free-standing heteroepitaxial (001) diamond on (11 2 ¯ 0) sapphire substrate

Observation of nitrogen species at Al₂O₃/NO₂/H-diamond interfaces by synchrotron radiation x-ray photoemission spectroscopy

Origin of reverse leakage current path in edge-defined film-fed growth (001) β -Ga₂O₃ Schottky barrier diodes observed by high-sensitive emission microscopy

Realization of direct bonding of single crystal diamond and Si substrates

Electronic states of NO₂-exposed H-terminated diamond/Al₂O₃ heterointerface studied by synchrotron radiation photoemission and X-ray absorption spectroscopy

Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices

Structural design of AlN/GaN superlattices for deep-ultraviolet light-emitting diodes with high emission efficiency

AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxy

Origin of exciton emissions from an AlN p-n junction light-emitting diode

Electroluminescence and capacitance-voltage characteristics of single-crystal n-type AlN (0001)/p-type diamond (111) heterojunction diodes

Supersaturation in nucleus and spiral growth of GaN in metal organic vapor phase epitaxy

Heterostructure growth of a single-crystal hexagonal AlN (0001) layer on cubic diamond (111) surface

Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation

Sorption properties of NO 2 gas and its strong influence on hole concentration of H-terminated diamond surfaces

Anisotropic in-plane strains in nonpolar AlN and AlGaN ( 11 2 ¯ ) films grown on SiC ( 11 2 ¯ ) substrates

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