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Journal Articles

Tunable third harmonic generation in the vacuum ultraviolet region using dielectric nanomembranes

Kuniaki Konishi, Daisuke Akai, Yoshio Mita, Makoto Ishida, Junji Yumoto, Makoto Kuwata-Gonokami

APL Photonics 5, 066103 (2020)

https://doi.org/10.1063/5.0008568

Published: June 2020

View articletitled, Tunable third harmonic generation in the vacuum ultraviolet region using dielectric nanomembranes

Includes: Supplementary data

Journal Articles

Sensitivity and resonance frequency with changing the diaphragm diameter of piezoelectric micromachined ultrasonic transducers

Daisuke Akai, Takeo Katori, Daisuke Takashima, Makoto Ishida

AIP Conf. Proc. 1709, 020010 (2016)

https://doi.org/10.1063/1.4941209

Published: February 2016

View articletitled, Sensitivity and resonance frequency with changing the diaphragm diameter of piezoelectric micromachined ultrasonic transducers

Journal Articles

Transient heat transfer analysis of Pb ( Zr , Ti ) O 3 thin film infrared sensor using finite element model

Koji Oishi, Shota Yonemaru, Daisuke Akai, Makoto Ishida

AIP Conf. Proc. 1649, 47–51 (2015)

https://doi.org/10.1063/1.4913543

Published: February 2015

View articletitled, Transient heat transfer analysis of Pb ( Zr , Ti ) O 3 thin film infrared sensor using finite element model

Journal Articles

Real-time monitoring of inhibitory effects on glutamate-induced neurotransmitter release using a potassium ion image sensor

Akiteru Kono, Takashi Sakurai, Toshiaki Hattori, Koichi Okumura, Makoto Ishida, Kazuaki Sawada

AIP Conf. Proc. 1649, 52–57 (2015)

https://doi.org/10.1063/1.4913544

Published: February 2015

View articletitled, Real-time monitoring of inhibitory effects on glutamate-induced neurotransmitter release using a potassium ion image sensor

Journal Articles

Multicolor fluorescence detection for single nucleotide polymorphism genotyping using a filter-less fluorescence detector

Keita Yamasaki, Hirokazu Nakazawa, Nobuo Misawa, Makoto Ishida, Kazuaki Sawada

Appl. Phys. Lett. 102, 233701 (2013)

https://doi.org/10.1063/1.4809999

Published: June 2013

View articletitled, Multicolor fluorescence detection for single nucleotide polymorphism genotyping using a filter-less fluorescence detector

Journal Articles

Vertically aligned silicon microwire arrays of various lengths by repeated selective vapor-liquid-solid growth of n -type silicon / n -type silicon

Akihito Ikedo, Takahiro Kawashima, Takeshi Kawano, Makoto Ishida

Appl. Phys. Lett. 95, 033502 (2009)

https://doi.org/10.1063/1.3178556

Published: July 2009

View articletitled, Vertically aligned silicon microwire arrays of various lengths by repeated selective vapor-liquid-solid growth of n -type silicon / n -type silicon

Journal Articles

Erratum: Ferroelectric and pyroelectric properties of highly (110)-oriented Pb ( Zr 0.40 Ti 0.60 ) O 3 thin films grown on Pt ∕ La Ni O 3 ∕ Si O 2 ∕ Si substrates [Appl. Phys. Lett. 90, 232908 (2007)]

Yiping Guo, Daisuke Akai, Kzauaki Swada, Makoto Ishida

Appl. Phys. Lett. 91, 069901 (2007)

https://doi.org/10.1063/1.2767970

Published: August 2007

View articletitled, Erratum: Ferroelectric and pyroelectric properties of highly (110)-oriented Pb ( Zr 0.40 Ti 0.60 ) O 3 thin films grown on Pt ∕ La Ni O 3 ∕ Si O 2 ∕ Si substrates [Appl. Phys. Lett. 90, 232908 (2007)]

Journal Articles

Ferroelectric and pyroelectric properties of highly (110)-oriented Pb ( Zr 0.40 Ti 0.60 ) O 3 thin films grown on Pt ∕ La Ni O 3 ∕ Si O 2 ∕ Si substrates

Yiping Guo, Daisuke Akai, Kzauaki Swada, Makoto Ishida

Appl. Phys. Lett. 90, 232908 (2007)

https://doi.org/10.1063/1.2746949

Published: June 2007

View articletitled, Ferroelectric and pyroelectric properties of highly (110)-oriented Pb ( Zr 0.40 Ti 0.60 ) O 3 thin films grown on Pt ∕ La Ni O 3 ∕ Si O 2 ∕ Si substrates

Journal Articles

Fabrication of local microvacuum package incorporating Si field emitter array and Ti getter

Daiji Noda, Masanori Hatakeyama, Kichinosuke Nishijyou, Kazuaki Sawada, Makoto Ishida

J. Vac. Sci. Technol. B 25, 931–934 (2007)

https://doi.org/10.1116/1.2720851

Published: May 2007

View articletitled, Fabrication of local microvacuum package incorporating Si field emitter array and Ti getter

Journal Articles

Ferroelectric properties of sol-gel delivered epitaxial Pb ( Zr x , Ti 1 − x ) O 3 thin films on Si using epitaxial γ - Al 2 O 3 Layers

Daisuke Akai, Mikako Yokawa, Keisuke Hirabayashi, Koji Matsushita, Kazuaki Sawada, Makoto Ishida

Appl. Phys. Lett. 86, 202906 (2005)

https://doi.org/10.1063/1.1929083

Published: May 2005

View articletitled, Ferroelectric properties of sol-gel delivered epitaxial Pb ( Zr x , Ti 1 − x ) O 3 thin films on Si using epitaxial γ - Al 2 O 3 Layers

Journal Articles

Fabrication of Si field emitter array in local vacuum package

Daiji Noda, Masanori Hatakeyama, Masanori Kyogoku, Kimiya Ikushima, Kazuaki Sawada, Makoto Ishida

J. Vac. Sci. Technol. B 23, 864–867 (2005)

https://doi.org/10.1116/1.1851533

Published: April 2005

View articletitled, Fabrication of Si field emitter array in local vacuum package

Journal Articles

Fabrication of metal–oxide–semiconductor field-effect transistors using crystalline γ ‐ Al 2 O 3 films as the gate dielectrics

Takayuki Okada, Kazuaki Sawada, Makoto Ishida, Mohammad Shahjahan

Appl. Phys. Lett. 85, 5004–5006 (2004)

https://doi.org/10.1063/1.1826228

Published: November 2004

View articletitled, Fabrication of metal–oxide–semiconductor field-effect transistors using crystalline γ ‐ Al 2 O 3 films as the gate dielectrics

Journal Articles

Electron emission characteristics from a single crystalline ferroelectric material by an infrared light irradiation

Daisuke Takamuro, Hidekuni Takao, Kazuaki Sawada, Makoto Ishida

J. Vac. Sci. Technol. B 22, 1396–1401 (2004)

https://doi.org/10.1116/1.1738115

Published: June 2004

View articletitled, Electron emission characteristics from a single crystalline ferroelectric material by an infrared light irradiation

Journal Articles

Planar metal–insulator–semiconductor type field emitter fabricated on an epitaxial Al/Al 2 O 3 / Si (111) structure

Jang-Seop Kim, Tomohiro Hoshi, Kazuaki Sawada, Makoto Ishida

J. Vac. Sci. Technol. B 22, 1358–1361 (2004)

https://doi.org/10.1116/1.1738116

Published: June 2004

View articletitled, Planar metal–insulator–semiconductor type field emitter fabricated on an epitaxial Al/Al 2 O 3 / Si (111) structure

Journal Articles

Field electron emission device using silicon nanoprotrusions

Kazuaki Sawada, Michiharu Tabe, Yasuhiko Ishikawa, Makoto Ishida

J. Vac. Sci. Technol. B 20, 787–790 (2002)

https://doi.org/10.1116/1.1467661

Published: June 2002

View articletitled, Field electron emission device using silicon nanoprotrusions

Journal Articles

Noise characteristics of emission current from conductive diamond-like carbon thin films coating on cone shaped silicon field emitters

Kazuaki Sawada, Haruhisa Kinoshita, Takeshi Masuda, Makoto Ishida

J. Vac. Sci. Technol. B 18, 1044–1047 (2000)

https://doi.org/10.1116/1.591324

Published: March 2000

View articletitled, Noise characteristics of emission current from conductive diamond-like carbon thin films coating on cone shaped silicon field emitters

Journal Articles

Excess noise characteristics of amorphous silicon staircase photodiode films

Kazuaki Sawada, Masahiro Akiyama, Makoto Ishida

Appl. Phys. Lett. 75, 1470–1472 (1999)

https://doi.org/10.1063/1.124728

Published: September 1999

View articletitled, Excess noise characteristics of amorphous silicon staircase photodiode films

Journal Articles

Self-formed silicon quantum wires on ultrasmooth sapphire substrates

Shun-ichi Yanagiya, Shunsuke Kamimura, Masanori Fujii, Makoto Ishida, Yoshitaka Moriyasu, Masahiro Matsui, Mamoru Yoshimoto, Tsuyoshi Ohnishi, Kenji Yoshida, Kenji Sasaki, Hideomi Koinuma

Appl. Phys. Lett. 71, 1409–1411 (1997)

https://doi.org/10.1063/1.119908

Published: September 1997

View articletitled, Self-formed silicon quantum wires on ultrasmooth sapphire substrates

Journal Articles

High quality epitaxial Si films onto γ‐Al₂O₃ (111)/Si (111) substrates using Al predeposition layers

Young‐Chul Jung, Hiroyuki Wado, Kentaro Ohtani, Makoto Ishida

Appl. Phys. Lett. 68, 3001–3003 (1996)

https://doi.org/10.1063/1.116677

Published: May 1996

View articletitled, High quality epitaxial Si films onto γ‐Al2O3 (111)/Si (111) substrates using Al predeposition layers

Journal Articles

Epitaxial growth of γ ‐ Al₂O₃ layers on Si(111) using Al solid source and N₂O gas molecular beam epitaxy

Hiroyuki Wado, Tadami Shimizu, Makoto Ishida

Appl. Phys. Lett. 67, 2200–2202 (1995)

https://doi.org/10.1063/1.115102

Published: October 1995

View articletitled, Epitaxial growth of γ ‐ Al2O3 layers on Si(111) using Al solid source and N2O gas molecular beam epitaxy

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Tunable third harmonic generation in the vacuum ultraviolet region using dielectric nanomembranes

Sensitivity and resonance frequency with changing the diaphragm diameter of piezoelectric micromachined ultrasonic transducers

Transient heat transfer analysis of Pb ( Zr , Ti ) O 3 thin film infrared sensor using finite element model

Real-time monitoring of inhibitory effects on glutamate-induced neurotransmitter release using a potassium ion image sensor

Multicolor fluorescence detection for single nucleotide polymorphism genotyping using a filter-less fluorescence detector

Vertically aligned silicon microwire arrays of various lengths by repeated selective vapor-liquid-solid growth of n -type silicon / n -type silicon

Erratum: Ferroelectric and pyroelectric properties of highly (110)-oriented Pb ( Zr 0.40 Ti 0.60 ) O 3 thin films grown on Pt ∕ La Ni O 3 ∕ Si O 2 ∕ Si substrates [Appl. Phys. Lett. 90, 232908 (2007)]

Ferroelectric and pyroelectric properties of highly (110)-oriented Pb ( Zr 0.40 Ti 0.60 ) O 3 thin films grown on Pt ∕ La Ni O 3 ∕ Si O 2 ∕ Si substrates

Fabrication of local microvacuum package incorporating Si field emitter array and Ti getter

Ferroelectric properties of sol-gel delivered epitaxial Pb ( Zr x , Ti 1 − x ) O 3 thin films on Si using epitaxial γ - Al 2 O 3 Layers

Fabrication of Si field emitter array in local vacuum package

Fabrication of metal–oxide–semiconductor field-effect transistors using crystalline γ ‐ Al 2 O 3 films as the gate dielectrics

Electron emission characteristics from a single crystalline ferroelectric material by an infrared light irradiation

Planar metal–insulator–semiconductor type field emitter fabricated on an epitaxial Al/Al 2 O 3 / Si (111) structure

Field electron emission device using silicon nanoprotrusions

Noise characteristics of emission current from conductive diamond-like carbon thin films coating on cone shaped silicon field emitters

Excess noise characteristics of amorphous silicon staircase photodiode films

Self-formed silicon quantum wires on ultrasmooth sapphire substrates

High quality epitaxial Si films onto γ‐Al₂O₃ (111)/Si (111) substrates using Al predeposition layers

Epitaxial growth of γ ‐ Al₂O₃ layers on Si(111) using Al solid source and N₂O gas molecular beam epitaxy

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