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M. Zielinski
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Journal Articles

Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing

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P. Fiorenza, L. Maiolo, G. Fortunato, M. Zielinski, F. La Via, F. Giannazzo, F. Roccaforte
Journal: Journal of Applied Physics
J. Appl. Phys. 132, 245701 (2022)
https://doi.org/10.1063/5.0109278
Published: December 2022
View articletitled, Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing
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Journal Articles

Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

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T. Sledziewski, M. Vivona, K. Alassaad, P. Kwasnicki, R. Arvinte, S. Beljakowa, H. B. Weber, F. Giannazzo, H. Peyre, V. Souliere, T. Chassagne, M. Zielinski, S. Juillaguet, G. Ferro, F. Roccaforte, M. Krieger
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 205701 (2016)
https://doi.org/10.1063/1.4967301
Published: November 2016
View articletitled, Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition
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Journal Articles

Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

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R. Boubekri, E. Cambril, L. Couraud, L. Bernardi, A. Madouri, M. Portail, T. Chassagne, C. Moisson, M. Zielinski, S. Jiao, J.-F. Michaud, D. Alquier, J. Bouloc, L. Nony, F. Bocquet, C. Loppacher, D. Martrou, S. Gauthier
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 054304 (2014)
https://doi.org/10.1063/1.4891833
Published: August 2014
View articletitled, Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy
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Journal Articles

Strain-induced energy gap variation in ZnTe/ZnMgTe core/shell nanowires

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P. Wojnar, M. Zielinski, E. Janik, W. Zaleszczyk, T. Wojciechowski, R. Wojnar, M. Szymura, Ł. Kłopotowski, L. T. Baczewski, A. Pietruchik, M. Wiater, S. Kret, G. Karczewski, T. Wojtowicz, J. Kossut
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 163111 (2014)
https://doi.org/10.1063/1.4873355
Published: April 2014
View articletitled, Strain-induced energy gap variation in ZnTe/ZnMgTe core/shell nanowires
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Journal Articles

Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition

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A. Michon, A. Tiberj, S. Vézian, E. Roudon, D. Lefebvre, M. Portail, M. Zielinski, T. Chassagne, J. Camassel, Y. Cordier
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 071912 (2014)
https://doi.org/10.1063/1.4866285
Published: February 2014
View articletitled, Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition
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Journal Articles

Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition

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A. Michon, S. Vézian, E. Roudon, D. Lefebvre, M. Zielinski, T. Chassagne, M. Portail
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 203501 (2013)
https://doi.org/10.1063/1.4806998
Published: May 2013
View articletitled, Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition
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Journal Articles

Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon

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M. Zielinski, J. F. Michaud, S. Jiao, T. Chassagne, A. E. Bazin, A. Michon, M. Portail, D. Alquier
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 053507 (2012)
https://doi.org/10.1063/1.3687370
Published: March 2012
View articletitled, Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon
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Journal Articles

High Quality Ohmic Contacts on n‐type 3C‐SiC Obtained by High and Low Process Temperature

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A. E. Bazin, J. F. Michaud, F. Cayrel, M. Portail, T. Chassagne, M. Zielinski, E. Collard, D. Alquier
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1292, 51–54 (2010)
https://doi.org/10.1063/1.3518309
Published: November 2010
View articletitled, High Quality Ohmic Contacts on n‐type 3C‐SiC Obtained by High and Low Process Temperature
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Journal Articles

Detailed study of the influence of surface misorientation on the density of Anti‐Phase Boundaries in 3C‐SiC layers grown on (001) silicon

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S. Jiao, M. Zielinski, S. Roy, T. Chassagne, J. F. Michaud, M. Portail, D. Alquier
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1292, 15–18 (2010)
https://doi.org/10.1063/1.3518286
Published: November 2010
View articletitled, Detailed study of the influence of surface misorientation on the density of Anti‐Phase Boundaries in 3C‐SiC layers grown on (001) silicon
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Journal Articles

Evaluation of the Crystalline Quality of Strongly Curved 3C‐SiC/Si Epiwafers Through X‐Ray Diffraction Analyses

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M. Zielinski, S. Jiao, T. Chassagne, A. Michon, M. Nemoz, M. Portail, J. F. Michaud, D. Alquier
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1292, 115–118 (2010)
https://doi.org/10.1063/1.3518274
Published: November 2010
View articletitled, Evaluation of the Crystalline Quality of Strongly Curved 3C‐SiC/Si Epiwafers Through X‐Ray Diffraction Analyses
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Journal Articles

Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition

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A. Michon, S. Vézian, A. Ouerghi, M. Zielinski, T. Chassagne, M. Portail
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 171909 (2010)
https://doi.org/10.1063/1.3503972
Published: October 2010
View articletitled, Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition
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Journal Articles

Epitaxial graphene on cubic SiC(111)/Si(111) substrate

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A. Ouerghi, A. Kahouli, D. Lucot, M. Portail, L. Travers, J. Gierak, J. Penuelas, P. Jegou, A. Shukla, T. Chassagne, M. Zielinski
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 191910 (2010)
https://doi.org/10.1063/1.3427406
Published: May 2010
View articletitled, Epitaxial graphene on cubic SiC(111)/Si(111) substrate
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Journal Articles

Evidence of electrical activity of extended defects in 3C–SiC grown on Si

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X. Song, J. F. Michaud, F. Cayrel, M. Zielinski, M. Portail, T. Chassagne, E. Collard, D. Alquier
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 142104 (2010)
https://doi.org/10.1063/1.3383233
Published: April 2010
View articletitled, Evidence of electrical activity of extended defects in 3C–SiC grown on Si
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Journal Articles

Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3 C -SiC in relation with the carbonization conditions

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S. Roy, M. Portail, T. Chassagne, J. M. Chauveau, P. Vennéguès, M. Zielinski
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 081903 (2009)
https://doi.org/10.1063/1.3202783
Published: August 2009
View articletitled, Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3 C -SiC in relation with the carbonization conditions
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Journal Articles

Multiexciton complexes in InAs self-assembled quantum dots

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M. Korkusinski, M. Zielinski, P. Hawrylak
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 122406 (2009)
https://doi.org/10.1063/1.3117231
Published: June 2009
View articletitled, Multiexciton complexes in InAs self-assembled quantum dots
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Journal Articles

Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates.

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M. Portail, M. Zielinski, T. Chassagne, S. Roy, M. Nemoz
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 083505 (2009)
https://doi.org/10.1063/1.3089215
Published: April 2009
View articletitled, Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates.
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Journal Articles

Stress relaxation during the growth of 3 C - Si C ∕ Si thin films

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M. Zielinski, A. Leycuras, S. Ndiaye, T. Chassagne
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 131906 (2006)
https://doi.org/10.1063/1.2357569
Published: September 2006
View articletitled, Stress relaxation during the growth of 3 C - Si C ∕ Si thin films
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Journal Articles

Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy

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V. Kirilyuk, P. R. Hageman, P. C. M. Christianen, P. K. Larsen, M. Zielinski
Journal: Applied Physics Letters
Appl. Phys. Lett. 79, 4109–4111 (2001)
https://doi.org/10.1063/1.1427151
Published: December 2001
View articletitled, Optical investigation of shallow acceptor states in GaN grown by hydride vapor-phase epitaxy
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Journal Articles

Reply to ‘‘Comment on ‘Modular digital boxcar for applications in pulsed laser spectroscopy’ ’’ [Rev. Sci. Instrum. 66 , 3507 (1995)]

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R. S. Dygdala, M. Zieliński
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 67, 3765 (1996)
https://doi.org/10.1063/1.1147147
Published: October 1996
View articletitled, Reply to ‘‘Comment on ‘Modular digital boxcar for applications in pulsed laser spectroscopy’ ’’ [Rev. Sci. Instrum. 66 , 3507 (1995)]
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Journal Articles

The influence of strain energy on abnormal grain growth in copper thin films

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E. M. Zielinski, R. P. Vinci, J. C. Bravman
Journal: Applied Physics Letters
Appl. Phys. Lett. 67, 1078–1080 (1995)
https://doi.org/10.1063/1.114455
Published: August 1995
View articletitled, The influence of strain energy on abnormal grain growth in copper thin films
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