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Journal Articles

Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates

Editor’s Pick
A. Knauer, T. Kolbe, S. Hagedorn, J. Hoepfner, M. Guttmann, H. K. Cho, J. Rass, J. Ruschel, S. Einfeldt, M. Kneissl, M. Weyers
Journal: Applied Physics Letters
Appl. Phys. Lett. 122, 011102 (2023)
https://doi.org/10.1063/5.0134253
Published: January 2023
View article titled, Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates
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Journal Articles

Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers

A. Mogilatenko, S. Walde, S. Hagedorn, C. Netzel, C.-Y. Huang, M. Weyers
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 045702 (2022)
https://doi.org/10.1063/5.0073076
Published: January 2022
View article titled, Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers
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Includes: Supplementary data
Journal Articles

Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs

J. Glaab, J. Ruschel, N. Lobo Ploch, H. K. Cho, F. Mehnke, L. Sulmoni, M. Guttmann, T. Wernicke, M. Weyers, S. Einfeldt, M. Kneissl
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 014501 (2022)
https://doi.org/10.1063/5.0069590
Published: January 2022
View article titled, Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs
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Journal Articles

A carbon-doping related luminescence band in GaN revealed by below bandgap excitation

F. Zimmermann, J. Beyer, F. C. Beyer, G. Gärtner, I. Gamov, K. Irmscher, E. Richter, M. Weyers, J. Heitmann
Journal: Journal of Applied Physics
J. Appl. Phys. 130, 055703 (2021)
https://doi.org/10.1063/5.0053940
Published: August 2021
View article titled, A carbon-doping related luminescence band in GaN revealed by below bandgap excitation
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Journal Articles

Direct observation of resonant tunneling in heterostructure with a single quantum well

V. I. Zubkov, Iana V. Ivanova, M. Weyers
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 043503 (2021)
https://doi.org/10.1063/5.0056842
Published: July 2021
View article titled, Direct observation of resonant tunneling in heterostructure with a single quantum well
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Journal Articles

High-temperature annealing of AlN films grown on 4H–SiC

F. Brunner, L. Cancellara, S. Hagedorn, M. Albrecht, M. Weyers
Journal: AIP Advances
AIP Advances 10, 125303 (2020)
https://doi.org/10.1063/5.0027330
Published: December 2020
View article titled, High-temperature annealing of AlN films grown on 4H–SiC
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Journal Articles

Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

Editor’s Pick
I. Gamov, E. Richter, M. Weyers, G. Gärtner, K. Irmscher
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 205701 (2020)
https://doi.org/10.1063/5.0010844
Published: May 2020
View article titled, Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects
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Journal Articles

Extra half-plane shortening of dislocations as an origin of tensile strain in Si-doped (Al)GaN

Editor’s Pick
J. Weinrich, A. Mogilatenko, F. Brunner, C. T. Koch, M. Weyers
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 085701 (2019)
https://doi.org/10.1063/1.5111664
Published: August 2019
View article titled, Extra half-plane shortening of dislocations as an origin of tensile strain in Si-doped (Al)GaN
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Journal Articles

Tri-carbon defects in carbon doped GaN

K. Irmscher, I. Gamov, E. Nowak, G. Gärtner, F. Zimmermann, F. C. Beyer, E. Richter, M. Weyers, G. Tränkle
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 262101 (2018)
https://doi.org/10.1063/1.5064432
Published: December 2018
View article titled, Tri-carbon defects in carbon doped GaN
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Journal Articles

Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs

J. Ruschel, J. Glaab, M. Brendel, J. Rass, C. Stölmacker, N. Lobo-Ploch, T. Kolbe, T. Wernicke, F. Mehnke, J. Enslin, S. Einfeldt, M. Weyers, M. Kneissl
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 084504 (2018)
https://doi.org/10.1063/1.5028047
Published: August 2018
View article titled, Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs
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Journal Articles

Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors

S. Walde, M. Brendel, U. Zeimer, F. Brunner, S. Hagedorn, M. Weyers
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 161551 (2018)
https://doi.org/10.1063/1.5010859
Published: December 2017
View article titled, Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors
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Journal Articles

The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers

M. Martens, C. Kuhn, T. Simoneit, S. Hagedorn, A. Knauer, T. Wernicke, M. Weyers, M. Kneissl
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 081103 (2017)
https://doi.org/10.1063/1.4977029
Published: February 2017
View article titled, The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers
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Journal Articles

Exciton localization in semipolar ( 11 2 ¯ 2 ) InGaN multiple quantum wells

Duc V. Dinh, F. Brunner, M. Weyers, B. Corbett, P. J. Parbrook
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 055705 (2016)
https://doi.org/10.1063/1.4960348
Published: August 2016
View article titled, Exciton localization in semipolar ( 11 2 ¯ 2 ) InGaN multiple quantum wells
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Journal Articles

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, M. Kneissl
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 151108 (2016)
https://doi.org/10.1063/1.4947102
Published: April 2016
View article titled, Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes
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Journal Articles

Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al,In)GaN laser diodes

J. Jeschke, U. Zeimer, L. Redaelli, S. Einfeldt, M. Kneissl, M. Weyers
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 173501 (2014)
https://doi.org/10.1063/1.4899298
Published: October 2014
View article titled, Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al,In)GaN laser diodes
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Journal Articles

High brightness photonic band crystal semiconductor lasers in the passive mode locking regime

R. Rosales, V. P. Kalosha, K. Posilović, M. J. Miah, D. Bimberg, J. Pohl, M. Weyers
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 161101 (2014)
https://doi.org/10.1063/1.4899129
Published: October 2014
View article titled, High brightness photonic band crystal semiconductor lasers in the passive mode locking regime
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Journal Articles

1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area

M. J. Miah, T. Kettler, K. Posilovic, V. P. Kalosha, D. Skoczowsky, R. Rosales, D. Bimberg, J. Pohl, M. Weyers
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 151105 (2014)
https://doi.org/10.1063/1.4898010
Published: October 2014
View article titled, 1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area
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Journal Articles

Impact of electron irradiation on electron holographic potentiometry

J. B. Park, T. Niermann, D. Berger, A. Knauer, I. Koslow, M. Weyers, M. Kneissl, M. Lehmann
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 094102 (2014)
https://doi.org/10.1063/1.4894718
Published: September 2014
View article titled, Impact of electron irradiation on electron holographic potentiometry
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Includes: Supplementary data
Journal Articles

Linear thermal expansion coefficient determination using in situ curvature and temperature dependent X-ray diffraction measurements applied to metalorganic vapor phase epitaxy-grown AlGaAs

A. Maaßdorf, U. Zeimer, J. Grenzer, M. Weyers
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 033501 (2013)
https://doi.org/10.1063/1.4812369
Published: July 2013
View article titled, Linear thermal expansion coefficient determination using <em>in situ</em> curvature and temperature dependent X-ray diffraction measurements applied to metalorganic vapor phase epitaxy-grown AlGaAs
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Journal Articles

Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy

A. Mogilatenko, S. Hagedorn, E. Richter, U. Zeimer, D. Goran, M. Weyers, G. Tränkle
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 093505 (2013)
https://doi.org/10.1063/1.4794098
Published: March 2013
View article titled, Predominant growth of non-polar a-plane (Al,Ga)N on patterned c-plane sapphire by hydride vapor phase epitaxy
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