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M. Posselt
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Journal Articles

Atomistic simulations on the relationship between solid-phase epitaxial recrystallization and self-diffusion in amorphous silicon

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M. Posselt, H. Bracht, D. Radić
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 035102 (2022)
https://doi.org/10.1063/5.0078015
Published: January 2022
View articletitled, Atomistic simulations on the relationship between solid-phase epitaxial recrystallization and self-diffusion in amorphous silicon
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Includes: Supplementary data
Journal Articles

Ion-beam induced atomic mixing in isotopically controlled silicon multilayers

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M. Radek, H. Bracht, B. Liedke, R. Böttger, M. Posselt
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 185701 (2016)
https://doi.org/10.1063/1.4967317
Published: November 2016
View articletitled, Ion-beam induced atomic mixing in isotopically controlled silicon multilayers
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Journal Articles

Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium

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M. Radek, H. Bracht, B. C. Johnson, J. C. McCallum, M. Posselt, B. Liedke
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 082112 (2015)
https://doi.org/10.1063/1.4929839
Published: August 2015
View articletitled, Atomic transport during solid-phase epitaxial recrystallization of amorphous germanium
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Journal Articles

Temperature dependence of ion-beam mixing in crystalline and amorphous germanium isotope multilayer structures

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M. Radek, H. Bracht, M. Posselt, B. Liedke, B. Schmidt, D. Bougeard
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 023506 (2014)
https://doi.org/10.1063/1.4861174
Published: January 2014
View articletitled, Temperature dependence of ion-beam mixing in crystalline and amorphous germanium isotope multilayer structures
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Journal Articles

Importance of configurational contributions to the free energy of nanoclusters

Open Access
M. Posselt
Journal: AIP Advances
AIP Advances 3, 072137 (2013)
https://doi.org/10.1063/1.4817590
Published: July 2013
View articletitled, Importance of configurational contributions to the free energy of nanoclusters
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Journal Articles

Ion-beam mixing in crystalline and amorphous germanium isotope multilayers

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H. Bracht, M. Radek, R. Kube, S. Knebel, M. Posselt, B. Schmidt, E. E. Haller, D. Bougeard
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 093502 (2011)
https://doi.org/10.1063/1.3658259
Published: November 2011
View articletitled, Ion-beam mixing in crystalline and amorphous germanium isotope multilayers
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Journal Articles

Heavily Ga-doped germanium layers produced by ion implantation and flash lamp annealing: Structure and electrical activation

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V. Heera, A. Mücklich, M. Posselt, M. Voelskow, C. Wündisch, B. Schmidt, R. Skrotzki, K. H. Heinig, T. Herrmannsdörfer, W. Skorupa
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 053508 (2010)
https://doi.org/10.1063/1.3309835
Published: March 2010
View articletitled, Heavily Ga-doped germanium layers produced by ion implantation and flash lamp annealing: Structure and electrical activation
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Journal Articles

Millisecond flash lamp annealing of shallow implanted layers in Ge

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C. Wündisch, M. Posselt, B. Schmidt, V. Heera, T. Schumann, A. Mücklich, R. Grötzschel, W. Skorupa, T. Clarysse, E. Simoen, H. Hortenbach
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 252107 (2009)
https://doi.org/10.1063/1.3276770
Published: December 2009
View articletitled, Millisecond flash lamp annealing of shallow implanted layers in Ge
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Journal Articles

Intrinsic and extrinsic diffusion of indium in germanium

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R. Kube, H. Bracht, A. Chroneos, M. Posselt, B. Schmidt
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 063534 (2009)
https://doi.org/10.1063/1.3226860
Published: September 2009
View articletitled, Intrinsic and extrinsic diffusion of indium in germanium
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Journal Articles

P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation

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M. Posselt, B. Schmidt, W. Anwand, R. Grötzschel, V. Heera, A. Mücklich, C. Wündisch, W. Skorupa, H. Hortenbach, S. Gennaro, M. Bersani, D. Giubertoni, A. Möller, H. Bracht
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 430–434 (2008)
https://doi.org/10.1116/1.2805249
Published: February 2008
View articletitled, P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation
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Journal Articles

Ab Initio atomic simulations of antisite pair recovery in cubic silicon carbide

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F. Gao, J. Du, E. J. Bylaska, M. Posselt, W. J. Weber
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 221915 (2007)
https://doi.org/10.1063/1.2743751
Published: June 2007
View articletitled, Ab Initio atomic simulations of antisite pair recovery in cubic silicon carbide
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Journal Articles

Damage accumulation in nitrogen implanted 6 H ‐ Si C : Dependence on the direction of ion incidence and on the ion fluence

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Z. Zolnai, A. Ster, N. Q. Khánh, G. Battistig, T. Lohner, J. Gyulai, E. Kótai, M. Posselt
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 023502 (2007)
https://doi.org/10.1063/1.2409609
Published: January 2007
View articletitled, Damage accumulation in nitrogen implanted 6 H ‐ Si C : Dependence on the direction of ion incidence and on the ion fluence
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Journal Articles

Solid-state nanocluster formation of praseodymium compounds in silicon and silicon dioxide

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R. Kögler, A. Mücklich, F. Eichhorn, M. Posselt, H. Reuther, W. Skorupa
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 104314 (2006)
https://doi.org/10.1063/1.2388724
Published: November 2006
View articletitled, Solid-state nanocluster formation of praseodymium compounds in silicon and silicon dioxide
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Journal Articles

Competition between damage buildup and dynamic annealing in ion implantation into Ge

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M. Posselt, L. Bischoff, D. Grambole, F. Herrmann
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 151918 (2006)
https://doi.org/10.1063/1.2360238
Published: October 2006
View articletitled, Competition between damage buildup and dynamic annealing in ion implantation into Ge
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Journal Articles

Multiple implantations into Si: Influence of the implantation sequence on ion range profiles

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M. Posselt, M. Mäder, A. Lebedev, R. Grötzschel
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 043109 (2005)
https://doi.org/10.1063/1.2005388
Published: July 2005
View articletitled, Multiple implantations into Si: Influence of the implantation sequence on ion range profiles
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Journal Articles

Cu gettering in ion implanted and annealed silicon in regions before and beyond the mean projected ion range

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R. Kögler, A. Peeva, A. Lebedev, M. Posselt, W. Skorupa, G. Özelt, H. Hutter, M. Behar
Journal: Journal of Applied Physics
J. Appl. Phys. 94, 3834–3839 (2003)
https://doi.org/10.1063/1.1602951
Published: September 2003
View articletitled, Cu gettering in ion implanted and annealed silicon in regions before and beyond the mean projected ion range
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Journal Articles

Channeling Doping Profiles Studies for Small Incident Angle Implantation into Silicon Wafers

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B. N. Guo, N. Variam, U. Jeong, S. Mehta, M. Posselt, A. Lebedev
Journal: AIP Conference Proceedings
AIP Conf. Proc. 680, 658–661 (2003)
https://doi.org/10.1063/1.1619801
Published: August 2003
View articletitled, Channeling Doping Profiles Studies for Small Incident Angle Implantation into Silicon Wafers
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Journal Articles

Competing influence of damage buildup and lattice vibrations on ion range profiles in Si

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M. Posselt, M. Mäder, R. Grötzschel, M. Behar
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 545–547 (2003)
https://doi.org/10.1063/1.1594281
Published: July 2003
View articletitled, Competing influence of damage buildup and lattice vibrations on ion range profiles in Si
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Journal Articles

Influence of dynamic annealing on the shape of channeling implantation profiles in Si and SiC

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M. Posselt, L. Bischoff, J. Teichert, A. Ster
Journal: Journal of Applied Physics
J. Appl. Phys. 93, 1004–1013 (2003)
https://doi.org/10.1063/1.1533092
Published: January 2003
View articletitled, Influence of dynamic annealing on the shape of channeling implantation profiles in Si and SiC
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Journal Articles

Influence of dose rate and temperature on ion-beam-induced defect evolution in Si investigated by channeling implantation at different doses

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M. Posselt, L. Bischoff, J. Teichert
Journal: Applied Physics Letters
Appl. Phys. Lett. 79, 1444–1446 (2001)
https://doi.org/10.1063/1.1396319
Published: September 2001
View articletitled, Influence of dose rate and temperature on ion-beam-induced defect evolution in Si investigated by channeling implantation at different doses
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